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公开(公告)号：US11575070B2
公开(公告)日：2023-02-07
申请号：US17496155
申请日：2021-10-07
Applicant: EPISTAR CORPORATION
Inventor： Che-Hung Lin , Chien-Chih Liao , Chi-Shiang Hsu , De-Shan Kuo , Chao-Hsing Chen
Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.
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公开(公告)号：US11011680B2
公开(公告)日：2021-05-18
申请号：US16566585
申请日：2019-09-10
Applicant: EPISTAR CORPORATION
Inventor： Yi-Hung Lin , Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Jen-Chieh Yu , Guan-Wu Chen
IPC: H01L33/40 , H01L33/22 , H01L33/46 , H01L33/42 , H01L33/62 , H01L33/00 , H01L33/32 , H01L33/06 , H01L33/12 , F21K9/23 , F21K9/232 , F21Y115/10 , F21K9/69
Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.
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公开(公告)号：US10950758B2
公开(公告)日：2021-03-16
申请号：US16877840
申请日：2020-05-19
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Wen-Hung Chuang , Tzu-Yao Tseng , Cheng-Lin Lu
IPC: H01L33/00 , H01L33/40 , H01L33/22 , H01L33/46 , H01L33/42 , H01L33/62 , H01L33/32 , F21K9/23 , H01L33/06 , H01L33/12 , F21K9/232 , F21Y115/10 , F21K9/69
Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.
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公开(公告)号：US10950652B2
公开(公告)日：2021-03-16
申请号：US16037862
申请日：2018-07-17
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.
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公开(公告)号：US10749075B2
公开(公告)日：2020-08-18
申请号：US16520076
申请日：2019-07-23
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Tsung-Hsun Chiang , Bo-Jiun Hu , Wen-Hung Chuang , Yu-Ling Lin
IPC: H01L33/38 , H01L33/62 , H01L33/46 , H01L33/08 , H01L33/22 , H01L33/00 , H01L33/44 , H01L33/40 , H01L33/02
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
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Patent Agency Ranking
公开(公告)号：US10553759B2
公开(公告)日：2020-02-04
申请号：US16035299
申请日：2018-07-13
Applicant: EPISTAR CORPORATION
Inventor： Aurelien Gauthier-Brun , Chao-Hsing Chen , Chang-Tai Hsaio , Chih-Hao Chen , Chi-Shiang Hsu , Jia-Kuen Wang , Yung-Hsiang Lin
Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.
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公开(公告)号：US10297723B2
公开(公告)日：2019-05-21
申请号：US15948738
申请日：2018-04-09
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Jia-Kuen Wang , Tzu-Yao Tseng , Bo-Jiun Hu , Tsung-Hsun Chiang , Wen-Hung Chuang , Kuan-Yi Lee , Yu-Ling Lin , Chien-Fu Shen , Tsun-Kai Ko
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US20190103515A1
公开(公告)日：2019-04-04
申请号：US16189540
申请日：2018-11-13
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
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公开(公告)号：US10038029B2
公开(公告)日：2018-07-31
申请号：US14829262
申请日：2015-08-18
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing Chen , Schang-Jing Hon , Alexander Chan Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
IPC: H01L27/15 , H01L25/065 , H01L25/075 , H01L27/32 , H01L33/50 , H01L33/62
Abstract: A light-emitting device includes a growth substrate, a plurality of light-emitting diode units formed on the growth substrate and arranged in a closed loop, an electrode directly formed on the growth substrate, an electrical connection structure formed on the growth substrate and connecting the plurality of light-emitting diode units with the electrode, and a plurality of rectifying diodes connecting to respective nodes of the closed loop.
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公开(公告)号：US20180130924A1
公开(公告)日：2018-05-10
申请号：US15800537
申请日：2017-11-01
Applicant: EPISTAR CORPORATION
Inventor： Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , YEN-LIANG KUO , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , YU-YAO LIN
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/62
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate.
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