公开(公告)号：JP2556534B2

公开(公告)日：1996-11-20

申请号：JP30189787

申请日：1987-11-30

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  MAEDA YOSHIO ,  USHIDA SHOJI

IPC: G03F1/00 ,  G03F1/50 ,  G03F1/54 ,  H01L21/027 ,  H01L21/30 ,  G03F1/08

公开(公告)号：JPH04246649A

公开(公告)日：1992-09-02

申请号：JP3162691

申请日：1991-01-31

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: G03F1/50 ,  G03F1/58 ,  H01L21/027

Abstract: PURPOSE:To prevent a change of the cross-sectional shape of a pattern of a light shielding film having low reflectance when a photomask is produced from a photomask blank having antireflection films each contg. a metallic silicon compd. and a light shielding film. CONSTITUTION:When a first antireflection film 2, a light shielding film 3 and a second antireflection film 4 are successively laminated on a transparent substrate 1 to obtain a photomask blank 10, the films 2, 4 are made of a molybdenum-silicon compd. contg. oxygen and nitrogen and the photomask blank has 90:10-33:67 molar ratio of molybdenum:silicon.

公开(公告)号：JPS63212937A

公开(公告)日：1988-09-05

申请号：JP4546987

申请日：1987-02-28

Applicant: HOYA CORP

Inventor： SUGIHARA OSAMU ,  KAWAI HISAO ,  MITSUI MASARU

IPC: G03F1/00 ,  G03F1/50 ,  G03F1/54 ,  G03F1/58 ,  H01L21/027

Abstract: PURPOSE:To enhance adhesiveness between a light-transmitting base plate and a light-shading film by forming an interlayer made of molybdenum silicide film containing oxygen between the light-transmitting base plate and the light- shading film to constitute a photomask blank. CONSTITUTION:The photomask blank 1 is constituted by forming the interlayer 12 of about 300Angstrom film thickness made of molybdenum silicide containing oxygen on the light-transmitting base plate 11 made of quartz glass, and the light- shading film 13 of about 1100Angstrom film thickness made of molybdenum silicide on the interlayer 12. The photomask is obtained by coating the film 13 of the blank 1 with a positive type photoresist film, exposing it to light through a mask to form a resist film pattern, and plasma etching the resist film pattern to form the patterns in the layer 12 and the film 13, thus permitting dropout of the light-shading film pattern of the film 13 to be prevented in an ultrasonic washing step by forming the interlayer 12 made of molybdenum silicide containing oxygen.

公开(公告)号：JPS6091356A

公开(公告)日：1985-05-22

申请号：JP19985583

申请日：1983-10-25

Applicant: HOYA CORP

Inventor： USHIDA MASAO ,  MATSUI SHIGEKAZU ,  YOSHIDA SHIYUUJI ,  MITSUI MASARU

IPC: C23C14/06 ,  G03F1/00 ,  G03F1/50 ,  G03F1/58 ,  G03F1/88 ,  H01L21/027

Abstract: PURPOSE:To decrease the rate of change in the flatness of a transparent base plate and to prevent the generation of pinholes by forming a film consisting of a mixture composed of Cr, CrxNy and CrxOyNz on the transparent base plate. CONSTITUTION:Gaseous plasma is formed on a transparent base plate 1 consisting of soda lime glass having a precision polished surface in a gaseous mixture atmosphere composed of 70% Ar, 25% N2 and 5% NO evacuated to 1X10 (Torr). The ionized gaseous argon is struck against a chromium target to drive off chromium atoms. Said chromium atoms react with the activated gas of nitrogen and carbon monoxide to form a film consisting of the mixture composed of CR, CrxNy and CrxCyNz. The base plate is coated by such film and the chromium mask blank is manufactured. The rate of the change in the flatness of the plate 1 of such chromium mask blank is 0.4mum and the percentage of pinhole defect is 14%.

公开(公告)号：JP2011090344A

公开(公告)日：2011-05-06

申请号：JP2011023432

申请日：2011-02-06

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SANO MICHIAKI

IPC: G03F1/54

Abstract: PROBLEM TO BE SOLVED: To provide a halftone film type gray tone mask having an excellent pattern shape and cross-sectional shape. SOLUTION: This invention relates to the gray tone mask for manufacturing a thin film transistor substrate having a pattern comprising a light-shielding part, a translucent part and a semi-translucent part, the gray tone mask for forming a resist pattern in which a channel part-forming area of the thin film transistor substrate is thinner than a source drain forming area. The gray tone mask has a light-shielding film pattern formed on a transparent substrate and a semi-translucent film pattern, wherein the light-shielding part is formed of at least a light-shielding film of the light-shielding film pattern, and the semi-translucent part is formed of a semi-translucent film formed in a substrate exposure part. The gray tone mask is exposed by an exposure device having a light source including a g-line, an h-line and an i-line, and the semi-translucent film is set so that a change of transmittance is 1.5% or less in an exposure wavelength region from the i-line to the g-line. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有优异图案形状和横截面形状的半色调薄膜型灰度调色掩模。 解决方案：本发明涉及用于制造具有包括遮光部分，半透明部分和半透明部分的图案的薄膜晶体管基板的灰度调色剂掩模，用于形成抗蚀图案的灰色调掩模 薄膜晶体管基板的沟道部分形成区域比源极漏极形成区域薄。 灰色调掩模具有形成在透明基板和半透明膜图案上的遮光膜图案，其中遮光部分至少由遮光膜图案的遮光膜形成， 半透明部分由形成在基板曝光部分中的半透明膜形成。 通过具有包括g线，h线和i线的光源的曝光装置曝光灰色调掩模，并且设定半透明膜，使得透射率的变化在1.5％以下 从i线到g线的曝光波长区域。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009104174A

公开(公告)日：2009-05-14

申请号：JP2009013890

申请日：2009-01-26

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN ,  MITSUI MASARU ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/60 ,  G03F1/68 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics such as chemical resistance, light resistance, and internal stress. SOLUTION: The method for manufacturing a halftone phase shift mask blank having a translucent film on a transparent substrate comprises: forming a translucent film containing nitrogen, metal and silicon and having a compressive stress on a transparent substrate by sputtering a target containing 70 to 95 mol% silicon and metal in an atmosphere containing nitrogen on the transparent substrate; and heat treating the translucent film at a temperature higher than a baking temperature of a resist film to be formed on the translucent film so as to reduce the internal stress of the translucent film. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供一种具有光半透明膜或具有指定的相位角和透射率的光半透明部分并且具有优异的膜特性如耐化学性，耐光性的相移掩模坯料的方法， 和内部压力。 解决方案：在透明基板上制造具有半透明膜的半色调相移掩模坯料的方法包括：通过溅射含有70个靶的靶，在透明基板上形成含有氮，金属和硅的压缩应力的半透明膜 至95mol％的硅和金属在透明基底上含有氮的气氛中; 在比半导体膜上形成的抗蚀剂膜的烘烤温度高的温度下对半透明膜进行热处理，以降低半透膜的内应力。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009086380A

公开(公告)日：2009-04-23

申请号：JP2007256926

申请日：2007-09-29

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  IMURA KAZUHISA ,  MITSUI MASARU

IPC: G03F1/50 ,  G03F1/54 ,  G03F1/76

Abstract: PROBLEM TO BE SOLVED: To provide a gray tone mask blank that can reduce variance in CD (line width) during producing a gray tone mask, and to provide a gray tone mask. SOLUTION: This invention relates to the gray tone mask blank to be used for manufacturing a gray tone mask for forming a desired transfer pattern including segments with different residual film values in a photoresist on a transfer object by selectively decreasing the dose of exposure light to the transfer object depending on the exposure region, wherein a light-semitransmitting film and a light-shielding film are formed, in this order, on a transparent substrate. The light-semitransmitting film and the light-shielding film are subjected to the respective predetermined patterning processes to form a light-shielding part, a light-transmitting part and a light-semitransmitting part to obtain a gray tone mask. As for the light-shielding film, a composition is varied in the film thickness direction, and the surface reflectance for the drawing light used in patterning is reduced. The light-semitransmitting film is adjusted so that the surface reflectance for the drawing light used in patterning does not exceed 45% within the plane. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供可以在产生灰度调色掩模期间减少CD（线宽）的变化并提供灰色调掩模的灰度调色掩模空白。 解决方案：本发明涉及用于制造灰色调掩模的灰度掩模毛坯，用于通过选择性地降低曝光剂量来形成包含在转印体上的光致抗蚀剂中具有不同残留膜值的段的期望转印图案 根据曝光区域对转印体进行光照射，其中依次形成发光半导体膜和遮光膜在透明基板上。 对光半透膜和遮光膜进行各自的预定图案化处理，以形成遮光部分，透光部分和光半透射部分，以获得灰色调掩模。 对于遮光膜，组合物在膜厚度方向上变化，并且用于图案化的拉伸光的表面反射率降低。 调整光半透膜，使得在图案化中使用的拉伸光的表面反射率在平面内不超过45％。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008257132A

公开(公告)日：2008-10-23

申请号：JP2007101985

申请日：2007-04-09

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： KOIKE KESAHIRO ,  MITSUI MASARU ,  TOCHIHARA YASUTAKA

IPC: G03F1/50 ,  G03F1/60

Abstract: PROBLEM TO BE SOLVED: To provide a substrate for a photomask blank and a photomask blank in which film thickness uniformity in the plane of a resist film can be improved and high mask pattern accuracy is obtained, and to provide a photomask having a fine pattern with high pattern accuracy formed by using the photomask blank. SOLUTION: The substrate 1 for a photomask blank has a thin film for forming a transfer pattern on a light transmitting substrate, wherein the substrate 1 has main surfaces 11a, 11b and an end face 12 formed on the rim of the main surfaces, and the end face 12 includes a side face 12c of the substrate and chamfered faces 12a, 12b interposed between the side face and the main surfaces. The side face 12c has a flatness of ≤50 μm. The photomask blank has a thin film for forming a transfer pattern, the film formed on the main surface of the substrate 1. The photomask has a transfer pattern formed by patterning the thin film from the photomask blank. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光掩模坯料和光掩模坯料的基板，其中可以提高抗蚀剂膜平面中的膜厚度均匀性并获得高掩模图案精度，并提供具有 通过使用光掩模坯料形成的具有高图案精度的精细图案。 解决方案：用于光掩模坯料的基板1具有用于在透光基板上形成转印图案的薄膜，其中基板1具有主表面11a，11b和形成在主表面的边缘上的端面12 并且端面12包括基板的侧面12c和插入在侧面和主表面之间的倒角面12a，12b。 侧面12c的平坦度≤50μm。 光掩模坯料具有用于形成转印图案的薄膜，该膜形成在基板1的主表面上。光掩模具有通过从光掩模坯料图案化薄膜而形成的转印图案。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008249950A

公开(公告)日：2008-10-16

申请号：JP2007090631

申请日：2007-03-30

Applicant: Hoya Corp ,  Hoya Electronics Malaysia Sdn Bhd ,  Hoya株式会社 ,  ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad

Inventor： MITSUI MASARU ,  USHIDA MASAO

IPC: G03F1/00 ,  G03F1/50 ,  G03F1/54

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank for use in manufacturing of an FPD device, which is capable of suppressing the damage to a tantalum light-semitransmissive film of a lower layer as much as possible when wet-etching a light-shielding film (upper layer) made of chromium by a chromium etching solution and doesn't need an etching stopper and has a simple film configuration. SOLUTION: The photomask blank for use in manufacturing of an FPD device includes a substrate, a light-semitransmissive film which is formed on the substrate and is made of a material containing tantalum, and a light-shielding film which is formed on the light-semitransmissive film and is made of a material containing chromium and nitrogen. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于制造FPD器件的掩模板，其能够在湿蚀刻光时尽可能多地抑制对下层的钽光半透射膜的损坏 由铬蚀刻溶液由铬制成的不含蚀刻阻挡层的薄膜（上层），并且具有简单的膜构造。 解决方案：用于制造FPD器件的光掩模坯料包括：衬底，形成在衬底上并由含钽材料制成的光半透射膜;以及遮光膜，其形成在 轻半透射膜，由含有铬和氮的材料制成。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008052120A

公开(公告)日：2008-03-06

申请号：JP2006229395

申请日：2006-08-25

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SANO MICHIAKI ,  USHIDA MASAO

IPC: C23C14/06 ,  G03F1/50 ,  G03F1/54 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask suitable for a wet process in a large mask for an FPD (such as a resist stripping method, an etching method and a cleaning method). SOLUTION: The mask blank for manufacturing an FPD device has at least a semi-translucent film containing Mo and Si and having a function of controlling the transmitting quantity on a translucent substrate, wherein the semi-translucent film containing Mo and Si shows 5% or less of variation in the transmittance in a wavelength band covering at least from the i line to the g line emitted from an extra-high pressure mercury lamp, after the film is in contact with an alkali aqueous solution (e.g. potassium hydroxide (KOH)) for 15 minutes, the solution to be used in a step of manufacturing or using the mask blank and the mask. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了在FPD的大掩模（诸如抗蚀剂剥离法，蚀刻方法和清洁方法）中提供适用于湿法工艺的掩模毛坯和光掩模。 解决方案：用于制造FPD器件的掩模板至少具有含有Mo和Si的半透明膜，并具有控制透光性基板上的透射量的功能，其中包含Mo和Si的半透明膜显示 薄膜与碱性水溶液接触后，至少从i线至g线发射的波长带的透射率的变化为5％以下，例如氢氧化钾（ KOH））15分钟，该溶液用于制造或使用掩模板和掩模的步骤。 版权所有（C）2008，JPO＆INPIT