公开(公告)号：DE19947020B4

公开(公告)日：2006-02-23

申请号：DE19947020

申请日：1999-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLMEROTH ARMIN ,  WEBER HANS ,  AHLERS DIRK

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

Abstract: Charge balancing is achieved in a compensation component by creating compensation regions having different thickness. In this manner, the ripple of the electric field can be chosen to have approximately the same magnitude in all of the compensation regions.

公开(公告)号：DE10130158C2

公开(公告)日：2003-06-05

申请号：DE10130158

申请日：2001-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  WILLMEROTH ARMIN ,  WAHL UWE ,  SCHMITT MARKUS

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/336

公开(公告)号：DE10132136C1

公开(公告)日：2003-02-13

申请号：DE10132136

申请日：2001-07-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  WILLMEROTH ARMIN ,  AHLERS DIRK ,  DEBOY GERALD

IPC: H01L21/336 ,  H01L23/58 ,  H01L29/06 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

Abstract: A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.

公开(公告)号：DE10122846A1

公开(公告)日：2002-11-21

申请号：DE10122846

申请日：2001-05-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78

Abstract: The semiconductor component has a source connecting region, a drain connecting region, and a gate connection region for connection of a semiconductor switching element. An edge termination region in this case provides an edge termination that is suitable for high voltages. The gate connecting region is at least partially located in the edge termination region which is suitable for high voltage. This results in an increase in the surface area for the active cell array, and hence in better value, without detracting from the electrical characteristics of the edge termination.

公开(公告)号：DE10061528C1

公开(公告)日：2002-07-25

申请号：DE10061528

申请日：2000-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  TIHANYI JENOE ,  STENGL JENS-PEER ,  WILLMEROTH ARMIN ,  AHLERS DIRK ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78

公开(公告)号：DE10024480A1

公开(公告)日：2001-11-29

申请号：DE10024480

申请日：2000-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AUERBACH FRANZ ,  DEBOY GERALD

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/70 ,  H01L29/74 ,  H01L29/861

Abstract: The device has a semiconducting body with a blocking pn-junction, a first zone of a first type connected to a first electrode and bounding on a second zone of a second type forming the junction, a second zone of the first type connected to a second electrode and nested regions of both types doped so the point of maximum electric strength of a field resulting from two perpendicular fields is displaced in a plane mid-way between two surfaces. The device has a semiconducting body with a blocking pn-junction, a first zone (7) of a first conductivity type connected to a first electrode (10) and bounding on a second zone (6) of a second type forming the junction, a second zone (1) of the first type connected to a second electrode (2) and nested regions (4,5) of the first and second type. The nested regions are doped so that the resulting point of maximum electric strength of a field resulting from two perpendicular fields is displaced in a plane essentially centrally positioned between and parallel to two surfaces (A,B).