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公开(公告)号:US20210251107A1
公开(公告)日:2021-08-12
申请号:US17017702
申请日:2020-09-11
Applicant: Unimicron Technology Corp.
Inventor: Ra-Min Tain , Pu-Ju Lin , Cheng-Chung Lo , Chi-Hai Kuo , Cheng-Ta Ko , Tzyy-Jang Tseng , John Hon-Shing Lau
Abstract: A vapor chamber structure includes a thermally conductive housing, a capillary structure layer, a grid structure layer, and a working fluid. The thermally conductive housing has a sealed chamber, where a pressure in the sealed chamber is lower than a standard atmospheric pressure. The capillary structure layer is disposed in the sealed chamber. The grid structure layer is disposed in the sealed chamber and arranged along a first direction. A size of the grid structure layer is less than or equal to a size of the capillary structure layer. The working fluid fills the sealed chamber.
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公开(公告)号:US20210136931A1
公开(公告)日:2021-05-06
申请号:US17147474
申请日:2021-01-13
Applicant: Unimicron Technology Corp.
Inventor: Tzyy-Jang Tseng , Cheng-Ta Ko , Pu-Ju Lin , Tse-Wei Wang
Abstract: A manufacturing method of a carrier structure includes: A build-up circuit layer is formed on a carrier. The build-up circuit layer includes at least one first circuit layer, at least one first dielectric layer, a second circuit layer, a second dielectric layer, and a plurality of conductive vias. The first circuit layer is located on the carrier and includes at least one first pad, which is disposed relative to at least one through hole of the carrier. The first dielectric layer is located on the first circuit layer. The second circuit layer is located on the first dielectric layer and includes at least one second pad. The second dielectric layer is located on the second circuit layer and includes at least one opening exposing the second pad. The conductive via penetrates the first dielectric layer and is electrically connected to the first circuit layer and the second circuit layer.
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公开(公告)号:US10925172B1
公开(公告)日:2021-02-16
申请号:US16702478
申请日:2019-12-03
Applicant: Unimicron Technology Corp.
Inventor: Tzyy-Jang Tseng , Cheng-Ta Ko , Pu-Ju Lin , Tse-Wei Wang
Abstract: A carrier structure includes a carrier having at least one through hole penetrating the carrier and a build-up circuit layer located on the carrier and including at least one first circuit layer, at least one first dielectric layer, a second circuit layer, a second dielectric layer, and a plurality of conductive vias. The first circuit layer is located on a first surface of the carrier and includes at least one first pad disposed relative to the through hole. The first dielectric layer is located on the first circuit layer. The second circuit layer is located on the first dielectric layer and includes at least one second pad. The second dielectric layer is located on the second circuit layer and includes at least one opening exposing the second pad. The conductive vias penetrate the first dielectric layer and are electrically connected to the first and second circuit layers.
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公开(公告)号:US10685922B2
公开(公告)日:2020-06-16
申请号:US16240806
申请日:2019-01-07
Applicant: Unimicron Technology Corp.
Inventor: Pu-Ju Lin , Cheng-Ta Ko , Yu-Hua Chen , Tzyy-Jang Tseng , Ra-Min Tain
Abstract: A package structure includes a redistribution structure, a chip, one or more structural reinforcing elements, and a protective layer. The redistribution structure includes a first circuit layer and a second circuit layer disposed over the first circuit layer. The first circuit layer is electrically connected to the second circuit layer. The chip is disposed over the redistribution structure and electrically connected to the second circuit layer. The one or more structural reinforcing elements are disposed over the redistribution structure. The structural reinforcing element has a Young's modulus in a range of of 30 to 200 GPa. The protective layer overlays the chip and a sidewall of the structural reinforcing element.
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公开(公告)号:US20190306987A1
公开(公告)日:2019-10-03
申请号:US16361180
申请日:2019-03-21
Applicant: Unimicron Technology Corp.
Inventor: Tzyy-Jang Tseng , Cheng-Ta Ko , Kai-Ming Yang , Chih-Lun Wang
Abstract: A circuit board including an interconnect substrate and a multilayer structure is provided. The interconnect substrate includes a core layer and a conductive structure disposed on the core layer. The multilayer structure is disposed on the conductive structure. The multilayer structure includes a plurality of dielectric layers and a plurality of circuit structures. The circuit structures are disposed in the dielectric layers. A topmost layer in the circuit structures is exposed to the dielectric layers to be in contact with the conductive structure. A pattern of the topmost layer in the circuit structures and a pattern of a top surface of the conductive structure are engaged with each other.
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公开(公告)号:US09484223B2
公开(公告)日:2016-11-01
申请号:US14985448
申请日:2015-12-31
Applicant: Unimicron Technology Corp.
Inventor: Tzyy-Jang Tseng , Chung-W. Ho
IPC: H01L21/00 , H01L21/48 , H01L21/683 , H01L23/498 , H01L23/00
CPC classification number: H01L21/4857 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/16 , H01L2221/6835 , H01L2224/131 , H01L2224/16225 , H01L2224/16237 , H01L2224/32225 , H01L2224/73204 , H01L2224/83102 , H01L2924/12042 , H01L2924/15311 , H01L2924/00 , H01L2924/00012 , H01L2924/014
Abstract: A coreless packaging substrate includes: a circuit buildup structure having at least a dielectric layer, a wiring layer and a plurality of conductive elements, a plurality of electrical pads embedded in the dielectric layer of the circuit buildup structure, a plurality of metal bumps formed on the wiring layer of the circuit buildup structure, and a dielectric passivation layer formed on the surface of the circuit buildup structure and the metal bumps with the metal bumps exposed from the dielectric passivation layer. The metal bumps each have a metal column portion and a wing portion integrally connected to the metal column portion, such that the bonding force between the metal bumps and a semiconductor chip can be enhanced by the entire top surface of the wing portions of the metal bumps being completely exposed.
Abstract translation: 无芯封装基板包括:具有至少介电层,布线层和多个导电元件的电路积层结构,嵌入电路堆积结构的电介质层中的多个电焊盘,形成在 电路积层结构的布线层,以及形成在电路堆积结构的表面上的电介质钝化层和金属凸块,金属凸块从电介质钝化层露出。 金属凸块各自具有金属柱部分和与金属柱部分一体地连接的翼部,使得金属凸块和半导体芯片之间的结合力可以通过金属凸块的翼部的整个顶表面增强 被完全暴露。
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公开(公告)号:US20140099432A1
公开(公告)日:2014-04-10
申请号:US13727600
申请日:2012-12-27
Applicant: UNIMICRON TECHNOLOGY CORP.
Inventor: Tzyy-Jang Tseng , Chang-Ming Lee , Wen-Fang Liu , Cheng-Po Yu
IPC: H05K3/00
CPC classification number: H05K3/007 , H05K3/0097 , H05K3/381 , H05K2201/0154
Abstract: A fabrication method for a flexible circuit board is provided. The fabrication method includes the following steps. Firstly, a release film having an upper surface and a lower surface opposite to each other is provided. Next, two flexible substrates are respectively disposed on the upper surface and the lower surface. Next, a plurality of nano-scale micro-pores are formed on each flexible substrate to form two non-smooth flexible substrates. The nano-scale micro-pores evenly distributed over an outer surface of each non-smooth flexible substrate. Each non-smooth flexible substrate being adapted to be performed a plating process directly on the outer surface thereof.
Abstract translation: 提供了一种柔性电路板的制造方法。 制造方法包括以下步骤。 首先,提供具有彼此相对的上表面和下表面的剥离膜。 接下来,在上表面和下表面上分别设置两个柔性基板。 接下来,在每个柔性基板上形成多个纳米级微孔,以形成两个非平滑柔性基板。 纳米级微孔均匀分布在每个非光滑柔性基底的外表面上。 每个非光滑柔性基底适于在其外表面上直接进行电镀工艺。
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公开(公告)号:US20250149426A1
公开(公告)日:2025-05-08
申请号:US18895309
申请日:2024-09-24
Applicant: Unimicron Technology Corp.
Inventor: An-Sheng Lee , Chen-Hao Lin , Kai-Ming Yang , Pu-Ju Lin , Cheng-Ta Ko , Chin-Sheng Wang , Tzyy-Jang Tseng
IPC: H01L23/498 , H01L23/00 , H01L25/00 , H01L25/16
Abstract: A package structure includes a package substrate, an organic interposer and an electronic unit. The package substrate includes a plurality of first pads. The organic interposer is disposed on the package substrate and includes a plurality of second pads. The second pads are directly connected to the first pads to electrically connected the organic interposer to the package substrate. At least one of each of the first pads and each of the second pads includes a pad portion and a plurality of contact portions connecting the pad portion. A first extension direction of the pad portion is different from a second extension direction of the contact portions. The electronic unit is disposed on the organic interposer, wherein the electronic unit is electrically connected to the package substrate through the organic interposer.
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公开(公告)号:US20250147249A1
公开(公告)日:2025-05-08
申请号:US18503194
申请日:2023-11-07
Applicant: Unimicron Technology Corp.
Inventor: John Hon-Shing Lau , Tzyy-Jang Tseng
IPC: G02B6/42
Abstract: A package structure includes a package substrate, an application specific integrated circuit (ASIC), a plurality of optoelectronic assemblies, and a plurality of organic interposers. The ASIC is disposed on the package substrate and electrically connected to the package substrate. The optoelectronic assemblies are separately disposed on the package substrate and surround the ASIC. Each of the plurality of optoelectronic assemblies includes an electronic integrated circuit (EIC), a photonic integrated circuit (PIC), and a plurality of hybrid bonding pads. The EIC is bonded to the PIC through the plurality of hybrid bonding pads. The plurality of organic interposers are separately disposed on the package substrate and surround the ASIC. The optoelectronic assemblies are electrically connected to the package substrate through the plurality of organic interposers.
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公开(公告)号:US11943877B2
公开(公告)日:2024-03-26
申请号:US17684421
申请日:2022-03-02
Applicant: Unimicron Technology Corp.
Inventor: Wen-Yu Lin , Kai-Ming Yang , Chen-Hao Lin , Pu-Ju Lin , Cheng-Ta Ko , Chin-Sheng Wang , Guang-Hwa Ma , Tzyy-Jang Tseng
IPC: H05K3/24 , H01L21/56 , H01L23/15 , H01L23/31 , H01L23/488 , H01L23/544 , H05K1/11 , H05K3/46
CPC classification number: H05K3/467 , H05K1/112 , H05K2201/0191
Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.
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