公开(公告)号：US09484377B2

公开(公告)日：2016-11-01

申请号：US14649710

申请日：2013-11-15

Applicant: SiliconFile Technologies Inc.

Inventor： Jun Ho Won ,  Won Ho Lee ,  Do Young Lee

IPC: H01L27/146 ,  H04N9/04

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract translation: 本发明涉及一种CMOS图像传感器及其制造方法，该CMOS图像传感器包括具有增强的光谱特性的红外像素及其制造方法，其中在RGB像素的滤色器和红外像素的滤色器之间形成台阶部分。 根据各个像素，在滤色器和红外滤光器之间形成阶梯部分，并且无论滤色器和红外滤光器的形成中的材料的特性如何，都可任意调节滤光片的厚度，从而提高串扰特性。

公开(公告)号：US20160284747A1

公开(公告)日：2016-09-29

申请号：US15079835

申请日：2016-03-24

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Jae Young PARK ,  Won Ho LEE

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14621 ,  H01L27/14645

Abstract: A 4-color image sensor may include a first unit pixel region having Gr, R, IR and B pixels on four divided regions; and a second unit pixel region having IR, R, Gb and B pixels on four divided regions, wherein the first unit pixel region and the second unit pixel regions are alternately arranged in a vertical direction and a horizontal direction, and the IR pixel is consecutively arranged along a diagonal line direction.

Abstract translation: 4色图像传感器可以包括在四个分割区域上具有Gr，R，IR和B像素的第一单位像素区域; 以及在四个分割区域上具有IR，R，Gb和B像素的第二单位像素区域，其中第一单位像素区域和第二单位像素区域在垂直方向和水平方向上交替排列，并且IR像素连续地 沿对角线方向排列。

公开(公告)号：US20160267946A1

公开(公告)日：2016-09-15

申请号：US15032935

申请日：2014-10-27

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Sang Wook Ahn ,  Huy Chan Jung ,  Yong Woon Lee ,  Heui-Gyun Ahn ,  Do Young Lee

IPC: G11C5/02 ,  G11C8/06 ,  G11C8/10 ,  H01L25/065 ,  G11C5/06 ,  H01L23/48

CPC classification number: G11C5/025 ,  G11C5/063 ,  G11C8/06 ,  G11C8/10 ,  H01L23/48 ,  H01L23/481 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a stack memory device and a method for operating same. The stack memory device, according to the present invention, is provided with: a first memory chip in which first type memory cells are repeatedly arranged in row direction and column direction, and which comprises one or more cell arrays, in which a dump line is connected to the each first type memory cell; and a second memory chip in which second type memory cells are repeatedly arranged in row direction and column direction, and which comprises one or more cell arrays, in which a dump line is connected to the each second type memory cell, wherein first pads are connected to the dump lines of the first type memory cells and second pads are connected to the dump lines of the second type memory cells, the first pads and the second pads having one-to-one correspondence.

Abstract translation: 本发明提供了一种堆栈存储装置及其操作方法。 根据本发明的堆叠存储器件提供有：第一存储器芯片，其中第一类型存储器单元在行方向和列方向上重复布置，并且包括一个或多个单元阵列，其中转储线是 连接到每个第一类型存储单元; 以及第二存储器芯片，其中第二类型存储器单元在行方向和列方向上重复排列，并且包括一个或多个单元阵列，其中转储线连接到每个第二类型存储单元，其中第一焊盘被连接 到第一类型存储单元的转储线和第二焊盘连接到第二类型存储单元的转储线，第一焊盘和第二焊盘具有一一对应关系。

公开(公告)号：US20160204157A1

公开(公告)日：2016-07-14

申请号：US14912373

申请日：2014-08-12

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Kyoung-Sik PARK ,  Heui Gyun AHN ,  Min-Suk KO ,  Gab-Hwan CHO

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract translation: 本发明涉及具有改进的芯片驱动性能的背光源图像传感器芯片，其中形成有导电焊盘的焊盘区域以外的区域和形成有滤光器的感测区域被用作 在具有限制区域的背光图像传感器芯片中，可以在没有附加处理的情况下进行辅助驱动的区域，从而可以执行辅助电源，辅助信号传输和辅助操作控制等附加功能，从而提高芯片驱动性能。

公开(公告)号：US20150115330A1

公开(公告)日：2015-04-30

申请号：US14529783

申请日：2014-10-31

Applicant: SiliconFile Technologies Inc.

Inventor： Jae Young Park ,  Young Ha Lee ,  Jun Ho Won ,  Do Young Lee

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469

Abstract: A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.

Abstract translation: 这种技术能够简化工艺并且在使用背面照明光电二极管接合两个晶片以制造图像传感器时确保不对准裕度。 当通过3D CIS（CMOS图像传感器）制造工艺制造图像传感器时，使用一个晶片的通孔和另一个晶片的焊盘来电连接两个晶片，即第一晶片和第二晶片。 此外，当通过3D CIS制造工艺制造图像传感器时，两个晶片使用两个晶片的通孔电连接。

公开(公告)号：US20150060968A1

公开(公告)日：2015-03-05

申请号：US14468843

申请日：2014-08-26

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Seung Hoon SA ,  Young Ha LEE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464

Abstract: An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.

Abstract translation: 图像传感器单元被分成两个芯片，并且在具有两个芯片的耦合结构的堆叠芯片封装图像传感器中的顶部晶片的单位像素的底部晶片中形成用于降低噪声的电容器，使得 提高了图像传感器的噪声特性。 堆叠芯片封装图像传感器包括：第一半导体芯片，其包括光电二极管，透射晶体管和第一导电焊盘，并且通过第一导电焊盘输出从光电二极管输出的图像电荷; 以及包括驱动晶体管，选择晶体管，复位晶体管和第二导电焊盘的第二半导体芯片，并且通过第二导电焊盘向相应像素提供与从第一半导体芯片接收的图像电荷相对应的输出电压。 第二半导体芯片包括用于降噪的电容器。

公开(公告)号：US08906781B2

公开(公告)日：2014-12-09

申请号：US14079075

申请日：2013-11-13

Applicant: Siliconfile Technologies Inc.

Inventor： In Gyun Jeon

IPC: H01L21/46 ,  H01L25/00 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L27/146

CPC classification number: H01L25/50 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L24/06 ,  H01L24/07 ,  H01L24/08 ,  H01L24/80 ,  H01L24/82 ,  H01L24/92 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/06051 ,  H01L2224/06505 ,  H01L2224/06517 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/82031 ,  H01L2224/821 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2224/05552 ,  H01L2924/00

Abstract: The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

Abstract translation: 本发明涉及一种用于电连接晶片的方法，其通过氧化物 - 氧化物接合方法物理地结合两个晶片，然后通过对接接触结构电连接两个晶片。 晶片通过相对简单的方法物理地彼此结合，然后通过TSV或对接接触孔电连接。 因此，由于可以简化制造工艺，可以减少加工误差，可以提高产品成品率。

公开(公告)号：US09887230B2

公开(公告)日：2018-02-06

申请号：US14430727

申请日：2013-09-24

Applicant: SiliconFile Technologies Inc.

Inventor： Jae Won Eom

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/148 ,  H04N5/3745 ,  H04N5/37457

Abstract: The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.

公开(公告)号：US09613881B2

公开(公告)日：2017-04-04

申请号：US14891629

申请日：2014-05-09

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun Ahn ,  Sang Wook Ahn ,  Yong Woon Lee ,  Huy Chan Jung ,  Sung Chun Jun

IPC: H01L27/00 ,  H01L23/367 ,  H01L25/065 ,  H01L23/522 ,  H01L23/58 ,  H01L27/06

CPC classification number: H01L23/367 ,  H01L23/3677 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/585 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.

公开(公告)号：US09543348B2

公开(公告)日：2017-01-10

申请号：US14912373

申请日：2014-08-12

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Kyoung-Sik Park ,  Heui Gyun Ahn ,  Min-Suk Ko ,  Gab-Hwan Cho

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract translation: 本发明涉及具有改进的芯片驱动性能的背光源图像传感器芯片，其中形成有导电焊盘的焊盘区域以外的区域和形成有滤光器的感测区域被用作 在具有限制区域的背光图像传感器芯片中，可以在没有附加处理的情况下进行辅助驱动的区域，从而可以执行辅助电源，辅助信号传输和辅助操作控制等附加功能，从而提高芯片驱动性能。