公开(公告)号：KR101437583B1

公开(公告)日：2014-09-12

申请号：KR1020070066767

申请日：2007-07-03

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  정란주 ,  서순애 ,  김동철 ,  이장원

IPC: H01L21/027

Abstract: 리소그라피(lithography) 장치 및 리소그라피 방법에 대해 개시한다. 본 발명의 리소그라피 장치는 기판에 대한 리소그라피 공정을 수행하기 위한 리소그라피 장치에 있어서, 상기 기판의 결정 구조를 분석하기 위한 분석 장치 및 상기 분석된 결정 구조를 기초해서 상기 기판의 위치를 조정하는 수단을 포함하고, 상기 리소그라피 장치는 상기 위치가 조정된 기판에 대하여 리소그라피 공정을 수행하도록 구성된 것을 특징으로 한다.

公开(公告)号：KR101206036B1

公开(公告)日：2012-11-28

申请号：KR1020060113385

申请日：2006-11-16

Applicant: 삼성전자주식회사

Inventor： 이명재 ,  박영수 ,  정란주 ,  서순애 ,  김동철 ,  안승언

IPC: H01L27/105

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625

Abstract: A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.

公开(公告)号：KR101190657B1

公开(公告)日：2012-10-15

申请号：KR1020030025082

申请日：2003-04-21

Applicant: 삼성전자주식회사

Inventor： 유인경 ,  정수환 ,  서순애 ,  김인숙

IPC: H01L27/12 ,  B82Y10/00

CPC classification number: B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

公开(公告)号：KR1020120068390A

公开(公告)日：2012-06-27

申请号：KR1020100129995

申请日：2010-12-17

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  허진성 ,  양희준 ,  서순애 ,  이성훈

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/1606

Abstract: PURPOSE: A graphene electronic device and a manufacturing method thereof are provided to maintain a property of a graphene channel layer without damage by forming gate oxide, in other word, a protective layer on graphene. CONSTITUTION: A graphene channel layer is arranged on the top of a substrate. A source electrode(130) and a drain electrode(140) are formed on both ends of a graphene channel layer(120). A gate oxide(150) is formed between the source electrode and the drain electrode on the graphene channel layer. The gate electrode is arranged on the gate oxide. The gate oxide is formed to be substantially identical to a shape of a channel layer between the source electrode and the drain electrode.

Abstract translation: 目的：提供石墨烯电子器件及其制造方法，以通过形成栅极氧化物，即石墨烯上的保护层来保持石墨烯通道层的性质而不损坏。 构成：石墨烯通道层布置在基板的顶部。 源极电极（130）和漏电极（140）形成在石墨烯通道层（120）的两端。 在石墨烯通道层上的源电极和漏电极之间形成栅极氧化物（150）。 栅电极设置在栅极氧化物上。 栅极氧化物形成为与源电极和漏电极之间的沟道层的形状基本相同。

公开(公告)号：KR1020120022087A

公开(公告)日：2012-03-12

申请号：KR1020100082636

申请日：2010-08-25

Applicant: 삼성전자주식회사

Inventor： 피웅환 ,  서순애 ,  김기원 ,  황인준 ,  김광석 ,  이성철

IPC: H03B15/00 ,  H01L43/12

CPC classification number: H03B15/006 ,  H01L43/12

Abstract: PURPOSE: An oscillator and an operating method thereof are provided to generate high frequency signals without application of external magnetism using phenomenon of a spin transfer torque. CONSTITUTION: The magnetic moment of a magnetic layer(FP1) applies current on an oscillator for precession. The current is applied from the magnetic layer to an anti- ferroelectric material layer(AF1). Electronics are applied from the anti- ferroelectric material layer through a pinned layer(FF1) to a free layer. The electronics passing through the pinned layer and flowing to the magnetic layer has the same spin direction as the pinned layer. The electronics can apply the spin torque on the magnetic layer. The magnetic moment of the magnetic layer can be perturbed by the spin torque.

Abstract translation: 目的：提供一种振荡器及其操作方法，以便利用自旋传递转矩的现象产生高频信号而不施加外部磁性。 构成：磁性层（FP1）的磁矩在振荡器上施加电流进行。 电流从磁性层施加到抗铁电材料层（AF1）。 电子从抗铁电材料层通过钉扎层（FF1）施加到自由层。 通过被钉扎层并流到磁性层的电子装置具有与被钉扎层相同的自旋方向。 电子部件可以将旋转扭矩施加在磁性层上。 磁性层的磁矩可以受到自旋转矩的扰动。

公开(公告)号：KR1020110098441A

公开(公告)日：2011-09-01

申请号：KR1020100018072

申请日：2010-02-26

Applicant: 삼성전자주식회사 ,  서울대학교산학협력단

Inventor： 정현종 ,  백승재 ,  서순애 ,  우윤성 ,  허진성 ,  서형석

IPC: H01L29/772 ,  H01L21/335

CPC classification number: H01L29/66045 ,  H01L23/522 ,  H01L27/0688 ,  H01L27/124 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/7781 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 그라핀 전자소자 및 제조방법이 개시된다. 개시된 그라핀 전자소자는, 상기 기판 상에 형성된 연결배선 및 복수의 전극을 덮는 층간 절연층과, 상기 층간 절연층 상에서 상기 복수의 전극을 덮는 제1절연층과, 상기 제1절연층 상에 형성되며 적어도 두개의 상기 전극과 그 양단이 연결되는 그라핀;을 포함한다.

公开(公告)号：KR1020110081638A

公开(公告)日：2011-07-14

申请号：KR1020100001895

申请日：2010-01-08

Applicant: 삼성전자주식회사

Inventor： 우윤성 ,  홍기하 ,  서순애 ,  정현종 ,  허진성

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L29/1606 ,  H01L29/66575

Abstract: PURPOSE: A method of fabricating graphene using laser annealing and method of fabricating field effect transistor using the same are provided to form a graphene layer by heating a part of a SiC layer or the whole thereof over 1900k without high temperature interference to a silicon substrate. CONSTITUTION: In a method of fabricating graphene using laser annealing and method of fabricating field effect transistor using the same, a silicon carbide substrate is prepared. The surface of the silicon substrate(20) is processed by laser annealing and a graphene layer(24) is formed on the processed surface of the substrate.

Abstract translation: 目的：通过使用激光退火制造石墨烯的方法和使用其制造场效应晶体管的方法被提供以通过将超过1900k的SiC层的一部分或其整体加热到硅衬底而形成石墨烯层而不受高温干扰。 构成：在使用激光退火制造石墨烯的方法中，使用该方法制造场效应晶体管，制备碳化硅衬底。 通过激光退火处理硅衬底（20）的表面，并且在衬底的处理表面上形成石墨烯层（24）。

公开(公告)号：KR1020110068185A

公开(公告)日：2011-06-22

申请号：KR1020090125036

申请日：2009-12-15

Applicant: 삼성전자주식회사 ,  광주과학기술원

Inventor： 김광석 ,  김기원 ,  서순애 ,  이승교 ,  장영만

IPC: G11C11/15 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  B82Y25/00 ,  H01F10/13

CPC classification number: H01L27/228 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  G11C11/15 ,  G11B5/39

Abstract: PURPOSE: A magnetic tunnel junction device, a method of manufacturing the same and an electronic device comprising the same are provided to have a high magnetoresistance ratio by maintaining an electronic device having a magnetic tunnel junction device amorphous state in a thermal treatment process. CONSTITUTION: In a magnetic tunnel junction device, a method of manufacturing the same and an electronic device comprising the same, a vertical MTJ(100) comprises a pinned layer(30), a tunneling film(40), and a free layer(50). The pinned layer comprises a plurality of a pair of material layers(30P1~30Pn). The first material layer comprises a first rare-earth transition metal layer(30a) and a second rare-earth transition metal layer(30b) The tunneling film is used for the coherent tunneling of a spin polarization current. The free layer has a vertical magnetic anisotropy.

Abstract translation: 目的：通过在热处理工艺中保持具有磁性隧道结器件非晶态的电子器件，提供磁性隧道结器件及其制造方法和包括该磁性隧道结器件的电子器件以具有高的磁阻比。 构成：在磁性隧道结装置中，制造该方法的方法和包括该方法的电子装置，垂直MTJ（100）包括钉扎层（30），隧道膜（40）和自由层（50） ）。 被钉扎层包括多个一对材料层（30P1〜30Pn）。 第一材料层包括第一稀土过渡金属层（30a）和第二稀土过渡金属层（30b）。隧道膜用于自旋极化电流的相干隧穿。 自由层具有垂直的磁各向异性。

公开(公告)号：KR1020110056868A

公开(公告)日：2011-05-31

申请号：KR1020090113361

申请日：2009-11-23

Applicant: 삼성전자주식회사 ,  더 보드 오브 트러스티스 오브 더 리랜드 스탠포드 주니어 유니버시티

Inventor： 서형석 ,  신재광 ,  서순애

IPC: H01L21/31 ,  H01L21/20

CPC classification number: H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

Abstract: PURPOSE: A method of fabricating a carbon insulating layer using a molecular beam epitaxy and fabricating a field effect transistor using the same are provided to implement carbon insulating layer and a channel formation layer while keeping the inside of the chamber vacuum. CONSTITUTION: A substrate(120) is mounted in a substrate holder within a molecular beam epitaxy chamber. A carbon source is provided from the first source supply unit into the chamber. A carbon atom layer of a carbon insulating layer(222) formed on the substrate is measured. The second source is supplied from a second source supply unit to form a second layer on the carbon insulating layer. The supply of the second source is interrupted by using the breaker of the second source supply unit.

Abstract translation: 目的：提供使用分子束外延制造碳绝缘层的方法，并制造使用该绝缘层的场效应晶体管，以实现碳绝缘层和沟道形成层，同时保持室内真空。 构成：将衬底（120）安装在分子束外延室内的衬底保持器中。 碳源从第一源供应单元提供到室中。 测量形成在基板上的碳绝缘层（222）的碳原子层。 第二源从第二源供应单元提供以在碳绝缘层上形成第二层。 通过使用第二源供应单元的断路器来中断第二源的供应。

公开(公告)号：KR1020110040460A

公开(公告)日：2011-04-20

申请号：KR1020090097736

申请日：2009-10-14

Applicant: 삼성전자주식회사

Inventor： 배지영 ,  이성철 ,  서순애 ,  조영진 ,  피웅환 ,  허진성

IPC: G11B5/39 ,  G11B5/02 ,  G11C11/15

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

Abstract: PURPOSE: An information storage device comprising a magneto-resistive device is provided to increase a read signal. CONSTITUTION: A magnetic track(100) has a magnetic domain wall between a plurality of magnetic domains. A magnetic domain wall moving unit(200) moves the magnetic domain wall. A magneto-resistive device(300) reproduces information which is recorded in the magnetic track. A pinned layer(10) has a fixed magnetization direction. A free layer(20) has a magnetization easy axis between the pinned layer and the magnetic track.

Abstract translation: 目的：提供包括磁阻装置的信息存储装置以增加读取信号。 构成：磁道（100）在多个磁畴之间具有磁畴壁。 磁畴壁移动单元（200）移动磁畴壁。 磁阻装置（300）再现记录在磁道中的信息。 钉扎层（10）具有固定的磁化方向。 自由层（20）在被钉扎层和磁迹之间具有易磁化轴。