公开(公告)号：KR101621241B1

公开(公告)日：2016-05-16

申请号：KR1020090095324

申请日：2009-10-07

Applicant: 삼성전자주식회사

Inventor： 이윤기 ,  이덕형

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

Abstract: 이미지센서및 그제조방법이제공된다. 이미지센서는다수의단위픽셀이형성되는픽셀영역과, 픽셀영역외의비픽셀영역이정의된기판, 비픽셀영역에대응하는기판내에형성된제1 웰, 기판의일면상에형성되고, 다층의배선과다층의절연막을포함하는배선구조체, 및비픽셀영역에대응하는기판내에, 제1 웰과기판의타면사이에형성된베이스웰을포함한다.

公开(公告)号：KR101594031B1

公开(公告)日：2016-02-15

申请号：KR1020090080692

申请日：2009-08-28

Applicant: 삼성전자주식회사

Inventor： 이동각 ,  김성길 ,  홍수진 ,  이선길 ,  이덕형

IPC: H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/28525 ,  H01L21/76847 ,  H01L21/76877 ,  H01L23/485 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 본발명의반도체소자는반도체기판과, 반도체기판을노출시키는콘택홀을갖는절연층과, 콘택홀을매립하는폴리실리콘층을포함하여이루어진다. 폴리실리콘층은, 콘택홀내에형성되고불순물이도핑되어있는제1 폴리실리콘층과, 콘택홀내에서제1 폴리실리콘층상에형성된불순물확산방지층과, 콘택홀을매립하도록불순물확산방지층상에형성되고, 불순물이도핑되어있는제2 폴리실리콘층을포함한다. 불순물확산방지층은제2 폴리실리콘층에포함된불순물이절연층및 반도체기판으로확산되지않도록구성되고, 불순물확산방지층은탄소또는산소가포함된물질층으로구성된다.

公开(公告)号：KR101552938B1

公开(公告)日：2015-09-14

申请号：KR1020090008047

申请日：2009-02-02

Applicant: 삼성전자주식회사

Inventor： 김진범 ,  김욱제 ,  이덕형 ,  이관흠 ,  이선길

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7848 ,  H01L21/26513 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636

Abstract: 공정을단순화한스트레스생성층을갖는반도체소자의제조방법을개시한다. 반도체기판의제1영역의제1게이트양측상기반도체기판에제1도전형의제1불순물영역을형성하고, 제2영역의상기제2게이트양측상기반도체기판에제2도전형의제2불순물영역을형성한다. 상기제1 및제2게이트들의양측벽들에제1 및제2스페이서들을형성한다. 상기제1 및제2불순물영역들과접하도록상기반도체기판의일부분들에제1 및제2반도체층들을형성한다. 상기제2반도체층을제거한다. 절연막의제1 및제2콘택홀들내에제1 및제2배리어막들을형성한다.

公开(公告)号：KR1020080075373A

公开(公告)日：2008-08-18

申请号：KR1020070014463

申请日：2007-02-12

Applicant: 삼성전자주식회사

Inventor： 유종렬 ,  이선길 ,  이덕형

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/4983 ,  H01L29/1066 ,  H01L29/6656 ,  H01L29/785

Abstract: A semiconductor device and a manufacturing method thereof are provided to suppress a leakage current by using a side pattern, even when a portion of a source region is overlapped with a drain region. A semiconductor device includes an active region, a gate electrode(180), and a source/drain region(190). The active region is defined by a device isolation region. The gate electrode includes a p-type first polysilicon pattern and an n-type second polysilicon pattern. The p-type first polysilicon pattern is formed on the active region. The n-type second polysilicon pattern is formed on a lower sidewall of the first polysilicon pattern. The source/drain regions are formed at both sides of the gate electrode. A first spacer(165) is arranged to be contacted with an upper sidewall of the first polysilicon pattern and an upper surface of the second polysilicon pattern.

Abstract translation: 提供一种半导体器件及其制造方法，即使当源极区域的一部分与漏极区域重叠时，也可以通过使用侧面图案来抑制漏电流。 半导体器件包括有源区，栅极（180）和源极/漏极区（190）。 有源区域由器件隔离区域定义。 栅电极包括p型第一多晶硅图案和n型第二多晶硅图案。 在有源区上形成p型第一多晶硅图案。 n型第二多晶硅图案形成在第一多晶硅图案的下侧壁上。 源极/漏极区域形成在栅电极的两侧。 第一间隔物（165）布置成与第一多晶硅图案的上侧壁和第二多晶硅图案的上表面接触。

公开(公告)号：KR1020080050850A

公开(公告)日：2008-06-10

申请号：KR1020060121671

申请日：2006-12-04

Applicant: 삼성전자주식회사

Inventor： 황성호 ,  이덕형 ,  문창록 ,  권두원

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

Abstract: A back illuminated image sensor is provided to reduce the reflectance of light that penetrates into a substrate and reaches an interface between the substrate and an interlayer dielectric by forming an anti-reflective layer between the substrate and the interlayer dielectric. A photodiode(52) is formed on a substrate(50'). A dielectric layer(56) is formed on a first surface of the substrate. A wire layer(58) is formed in the dielectric layer. An anti-reflective layer is disposed between the substrate and the dielectric layer. Plural color filters(60) are formed on a second surface of the substrate opposite to the first surface. A micro lens(62) is formed on the color filter. First material layers and second material layers, which have different refractive indexes, are laminated in turn to form the anti-reflective layer. The first material is a silicon oxide layer. The second material is a silicon nitride layer. A refractive index of the first material layer is less than that of the second material index.

Abstract translation: 提供背照明图像传感器以通过在基板和层间电介质之间形成抗反射层来减少穿透到基板中并到达基板与层间电介质之间的界面的光的反射率。 在基板（50'）上形成光电二极管（52）。 介电层（56）形成在基板的第一表面上。 在电介质层中形成导线层（58）。 抗反射层设置在基板和电介质层之间。 多个滤色器（60）形成在与第一表面相对的基板的第二表面上。 在滤色器上形成微透镜（62）。 具有不同折射率的第一材料层和第二材料层依次层叠以形成抗反射层。 第一种材料是氧化硅层。 第二种材料是氮化硅层。 第一材料层的折射率小于第二材料指数的折射率。

公开(公告)号：KR100790981B1

公开(公告)日：2008-01-02

申请号：KR1020060013710

申请日：2006-02-13

Applicant: 삼성전자주식회사

Inventor： 문창록 ,  백기현 ,  이덕형 ,  황성호

IPC: H01L27/146

CPC classification number: G02B5/201 ,  G02B5/285 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: 굴절율이 서로 다른 무기물질이 교대로 반복 적층된 칼라필터, 칼라필터 어레이 및 그의 제조방법 및 이미지 센서를 개시한다.
칼라필터는 기판; 및 소정 색을 위한 특정 파장의 광을 필터링하기 위한, 상기 기판상에 교대로 반복 적층되는, 서로 다른 굴절율을 갖는 제1무기막과 제2무기막을 포함한다. 상기 제1무기막과 제2무기막의 굴절율 차가 적어도 0.8이상이며, 2 내지 5회 반복 적층되며, 바람직하게는 3회 반복 적층된다. 상기 제1무기막과 제2무기막은 400 내지 700 nm 의 가시광선 영역에서 1.3 내지 6.0의 굴절율을 갖는으며, SiO2, SiON, SiN 및 Si 로부터 선택된다.

公开(公告)号：KR1020070120342A

公开(公告)日：2007-12-24

申请号：KR1020060054977

申请日：2006-06-19

Applicant: 삼성전자주식회사

Inventor： 김홍기 ,  이덕형

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14645 ,  H01L27/14685

Abstract: A CMOS(complementary metal oxide semiconductor) image sensor having an ARC(anti-reflective coating) with different thickness according to each pixel is provided to increase light receiving efficiency of a photoelectric generation part by having an ARC specialized according to each color. A first photoelectric generation part(210a) detects light of a first color to generate an electric signal. A first ARC(250a) having a first thickness is formed on the surface of the first photoelectric generation part. A second photoelectric generation part(210b) detects light of a second color to generate an electric signal. A second ARC(250b) is formed on the surface of the second photoelectric generation part, having a second thickness greater than the first thickness. A third photoelectric generation part(210c) detects light of a third color to generate an electrical signal. A third ARC(250c) is formed on the surface of the third photoelectric generation part, having a third thickness greater than the second thickness.

Abstract translation: 提供具有根据每个像素具有不同厚度的ARC（抗反射涂层）的CMOS（互补金属氧化物半导体）图像传感器，以通过具有根据每种颜色专门化的ARC来增加光电发生部件的光接收效率。 第一光电产生部件（210a）检测第一颜色的光以产生电信号。 具有第一厚度的第一ARC（250a）形成在第一光电发生部分的表面上。 第二光电产生部件（210b）检测第二颜色的光以产生电信号。 第二ARC（250b）形成在第二光电发生部分的表面上，具有大于第一厚度的第二厚度。 第三光电产生部件（210c）检测第三颜色的光以产生电信号。 第三ARC（250c）形成在第三光电发生部分的表面上，具有大于第二厚度的第三厚度。

公开(公告)号：KR1020070081702A

公开(公告)日：2007-08-17

申请号：KR1020060013864

申请日：2006-02-13

Applicant: 삼성전자주식회사

Inventor： 이덕형 ,  김정빈 ,  김홍기

IPC: H01L27/14

CPC classification number: H01L27/14621 ,  H01L27/14625 ,  H01L27/14685

Abstract: An image sensor and its manufacturing method are provided to decrease an aspect ratio of the image sensor by integrating a color filter with a micro lens which removes a color filter layer and an overcoating layer. A light receiving element(115) is formed in a semiconductor substrate(100), an interlayer dielectrics(125,135,145) are formed on the substrate. Color filter lenses(180R,180G,180B) are formed on the interlayer dielectrics. The color filter lenses include a red filter lens, a green filter lens, and a blue filter lens. The color filter lens is formed in a stacked structure of different inorganic layers. The inorganic layer includes an oxide layer and a nitride layer.

Abstract translation: 提供一种图像传感器及其制造方法，通过将滤色器与除去滤色器层和外涂层的微透镜相结合来减小图像传感器的纵横比。 在半导体衬底（100）中形成光接收元件（115），在衬底上形成层间电介质（125,135,145）。 彩色滤光镜（180R，180G，180B）形成在层间电介质上。 滤色器透镜包括红色滤光镜，绿色滤光镜和蓝色滤镜。 滤色镜透镜以不同的无机层的叠层结构形成。 无机层包括氧化物层和氮化物层。

公开(公告)号：KR1020070081627A

公开(公告)日：2007-08-17

申请号：KR1020060013710

申请日：2006-02-13

Applicant: 삼성전자주식회사

Inventor： 문창록 ,  백기현 ,  이덕형 ,  황성호

IPC: H01L27/146

CPC classification number: G02B5/201 ,  G02B5/285 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: A color filter, a color filter array, a method for manufacturing the color filter, and an image sensor are provided to prevent different color beams from being mixed with one another by laminating plural inorganic films with different refractive indexes. A color filter(20) includes a substrate(10) and first and second inorganic films(21,25), which are repeatedly and alternatively laminated on the substrate. The first and the second inorganic films contain inorganic materials having a refractive index between 1.3 and 6.0 in a visible ray region between 400 and 700 nm. The first inorganic film is made of a material with a big refractive index, while the second inorganic film is made of a material with a small refractive index. A difference between the refractive indexes of the first and the second inorganic films is at least 0.8.

Abstract translation: 提供滤色器，滤色器阵列，滤色器的制造方法和图像传感器，以通过层叠多个折射率不同的无机膜来防止不同的颜色光束彼此混合。 滤色器（20）包括基板（10）和第一和第二无机膜（21,25），其被重复地交替层压在基板上。 第一和第二无机膜含有在400和700nm之间的可见光区域中折射率在1.3和6.0之间的无机材料。 第一无机膜由具有大折射率的材料制成，而第二无机膜由折射率小的材料制成。 第一和第二无机膜的折射率之差至少为0.8。

公开(公告)号：KR100688589B1

公开(公告)日：2007-03-02

申请号：KR1020060022726

申请日：2006-03-10

Applicant: 삼성전자주식회사

Inventor： 이석하 ,  이덕형 ,  신종철 ,  이강복

IPC: H01L27/146

Abstract: An image sensor having an improved frill factor is provided to improve a fill factor while reducing a unit pixel area and enabling high integration by making a unit pixel include at least two photoelectric conversion devices wherein a reading-out devices for outputting a signal from the photoelectric conversion devices is shared. A photoelectric conversion active region, an interconnection reading-out active region(C_RoA) and a separation reading-out active region(I_RoA) are defined by a dielectric isolation region(DIR) formed in a substrate. The photoelectric conversion active region includes a plurality of photoelectric conversion active region units(PA_u1,PA_u2) disposed as a matrix type and junction isolation regions(JIR) positioned between photoelectric conversion active region units adjacent to a row direction and a column direction wherein the adjacent photoelectric conversion active region units are electrically separated by the junction isolation regions. The interconnection reading-out active region is positioned in one region surrounded by the corner parts of the photoelectric conversion active region units, extended from at least one of the surrounding corner parts and electrically separated from the rest of the corner part by the dielectric isolation region. The separation reading-out active region is positioned in another region surrounded by the corner part of the photoelectric conversion active region units, electrically separated from the surrounding corner parts by the dielectric isolation region. The reading-out active regions include channel regions. The dielectric isolation region is positioned at both sides of the channel regions.

Abstract translation: 提供具有改进的褶边系数的图像传感器以改善填充因子，同时减小单位像素面积并且通过使得单位像素包括至少两个光电转换设备来实现高集成度，其中用于输出来自光电设备的信号的读出设备 转换设备是共享的。 光电转换有源区，互连读出有源区（C_RoA）和分离读出有源区（I_RoA）由形成在衬底中的电介质隔离区（DIR）限定。 光电转换有源区包括设置为矩阵型的多个光电转换有源区单元（PA_u1，PA_u2）和位于与行方向和列方向相邻的光电转换有源区单元之间的结隔离区（JIR），其中相邻 光电转换有源区单元被结隔离区电分离。 互连读出有源区位于由光电转换有源区单元的角部围绕的一个区域中，该区域从至少一个周围角部延伸并通过介电隔离区与角部的其余部分电分离 。 分离读出有源区位于由光电转换有源区单元的角部围绕的另一个区域中，并通过介电隔离区与周围角部电分离。 读出活动区域包括沟道区域。 介电隔离区位于沟道区的两侧。