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公开(公告)号：KR1020050049860A
公开(公告)日：2005-05-27
申请号：KR1020030083616
申请日：2003-11-24
Applicant: 삼성전자주식회사
IPC: G11B9/02
CPC classification number: H01L27/11502 , G11B9/02 , G11C11/22
Abstract: 본 발명은 전하-쌍극자가 결합된 정보 저장 매체에 관한 것이다. 기판; 상기 기판 상에 형성된 하부 전극; 상기 하부 전극 상에 형성된 강유전층; 및 상기 강유전층 상에 형성된 절연층;을 포함하는 전하-쌍극자가 결합된 정보 저장 매체를 제공한다. 이에 의하여, 전기적으로 안정된 정보를 기록할 수 있는 정보 저장 매체를 제공할 수 있다. 또한, 비교적 장범위인 전장을 형성시킴으로써 정보의 재생시 프로브와 정보 저장 매체를 서로 접촉시키지 않고도 신뢰성있게 정보를 재생하면서 프로브와 정보 저장 매체 사이의 접촉에 의해 발생할 수 있는 마모 문제를 해결할 수 있다.
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公开(公告)号：KR1020050020872A
公开(公告)日：2005-03-04
申请号：KR1020030058286
申请日：2003-08-22
Applicant: 삼성전자주식회사
IPC: H02N1/06
CPC classification number: H02N1/008
Abstract: PURPOSE: A 2-axis actuator having large-area stage is provided to obtain a maximized stage area by disposing a stage over a driving unit such that the stage region and the driving unit region are formed independently from each other. CONSTITUTION: A 2-axis actuator comprises a substrate(11); a quadrilateral inertia portion spaced upward apart from the center of the substrate; a quadrilateral stage(50) connected to a upper part of the inertia portion; a plurality of driving frame portions including a plurality of driving frames arranged in parallel to sides of the inertia portion; a plurality of comb vertical direction deformable spring portions including springs(53,54) for vertically connecting each of the sides of the inertia portion and insides of driving frames corresponding to the sides of the inertia portion; a plurality of fixed frame portions including a plurality of fixed frames arranged alternately with the driving frames of the driving frame portions; driving comb electrodes arranged in each of the driving frames, and extended in the direction vertical to one side of the inertia portion; and fixed comb electrodes arranged in the fixed frames of the fixed frame portion, alternately with the driving comb electrodes; and a plurality of comb direction deformable spring portions arranged at one sides and the other sides of the driving frame portions. The comb direction deformable spring portions provide elastic restoring forces in the direction vertical to one side of the inertia portion.
Abstract translation: 目的：提供具有大面积级的2轴致动器，以通过在驱动单元上设置平台以使得台区域和驱动单元区域彼此独立地形成来获得最大化的台面区域。 构成：2轴致动器包括衬底（11）; 四边形惯性部分，其与衬底的中心向上隔开; 与所述惯性部的上部连接的四边形台（50） 多个驱动框架部分，其包括平行于所述惯性部分的侧面布置的多个驱动框架; 多个梳子垂直方向可变形弹簧部分，包括用于垂直地连接惯性部分的每个侧面的弹簧和与惯性部分的侧面对应的驱动框架的内部; 多个固定框架部分，包括与驱动框架部分的驱动框架交替布置的多个固定框架; 驱动梳电极，其布置在每个驱动框架中，并且在垂直于惯性部分的一侧的方向上延伸; 以及固定梳状电极，与固定框架部分的固定框架交替地与驱动梳状电极配置; 以及布置在所述驱动框架部分的一侧和另一侧的多个梳状可变形弹性部分。 梳方向可变形弹簧部分沿垂直于惯性部分一侧的方向提供弹性恢复力。
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63.发明授权저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치 失效如果您有任何疑问，请联系我们，以便我们能够帮助您解决问题，并为您的信息提供有效的信息。
公开(公告)号：KR100468850B1
公开(公告)日：2005-01-29
申请号：KR1020020025400
申请日：2002-05-08
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01Q60/40 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B11/08
Abstract: 저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 이용한 정보기록 및 재생방법이 개시된다. 개시된 반도체 탐침은, 제 1불순물이 도핑된 팁과, 팁이 말단부에 위치하는 캔티레버를 구비하며, 팁은, 팁의 첨두부에 위치하며, 제1불순물과 다른 제 2불순물이 저농도로 도핑되어 형성된 저항 영역 및, 저항영역과 접촉하도록 저항영역의 주변에 위치하며 제 2불순물이 고농도로 도핑되어 형성되는 제 1 및 제 2반도체 전극 영역을 구비한다. 본 발명의 반도체 탐침은 반도체 전극 영역 사이에 저항 영역을 형성하여 외부전계에 의한 반도체 공핍층의 형성유무를 감지할 수 있으므로 감도가 우수하다.
Abstract translation: 提供了具有电阻性尖端的半导体探针，制造该半导体探针的方法以及使用该半导体探针记录和再现信息的方法。 半导体探头包括尖端和悬臂。 尖端掺杂有第一杂质。 悬臂具有末端部分，尖端位于该末端部分上。 尖端包括电阻区域，以及第一和第二半导体电极区域。 电阻区域位于尖端的尖峰处并轻微掺杂与第一杂质不同的第二杂质。 第一和第二半导体电极区域重掺杂第二杂质并接触电阻区域。
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64.发明公开반도체 탐침 및 그 제조방법 및 이를 구비하는 반도체표면 분석 장치 및 이용한 반도체 표면 분석방법 失效半导体探针，其制造方法，具有半导体探针的半导体表面分析系统以及用于分析半导体表面以测量瞳孔密度的方法
公开(公告)号：KR1020040076998A
公开(公告)日：2004-09-04
申请号：KR1020030012358
申请日：2003-02-27
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: PURPOSE: A semiconductor probe, a fabricating method thereof, a semiconductor surface analysis system having a semiconductor probe, and a method for analyzing a semiconductor surface are provided to measure correctly density of a dopant of a semiconductor sample by using a non-destructive method. CONSTITUTION: A semiconductor probe includes a semiconductor tip(11) including a low-density dopant and a cantilever(15). The semiconductor tip is installed on one end of the cantilever. A conductive region(13) is formed on the cantilever. The conductive region is formed with a heavily doped region. The semiconductor probe further includes an electrode for connecting electrically the conductive region of the cantilever to an external power source.
Abstract translation: 目的：提供一种半导体探针及其制造方法，具有半导体探针的半导体表面分析系统和半导体表面分析方法，以通过非破坏性方法正确地测量半导体样品的掺杂剂的密度。 构成：半导体探针包括包括低密度掺杂剂和悬臂（15）的半导体尖端（11）。 半导体尖端安装在悬臂的一端。 在悬臂上形成导电区域（13）。 导电区域形成有重掺杂区域。 半导体探针还包括用于将悬臂的导电区域电连接到外部电源的电极。
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65.发明公开저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치 失效具有电阻提示的半导体探针及其制造方法，以及记录信息的方法和使用该方法再现信息的方法
公开(公告)号：KR1020030087372A
公开(公告)日：2003-11-14
申请号：KR1020020025400
申请日：2002-05-08
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01Q60/40 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B11/08
Abstract: PURPOSE: A semiconductor probe having a resistive tip, a manufacturing method thereof, and a method of recording information and method of reproducing information using the same are provided to be capable of detecting small surface electric charge by forming a semiconductor resistive region at the end portion of the tip. CONSTITUTION: A semiconductor probe is provided with a tip(30) having the first dopants and a cantilever(41). At this time, the tip includes a resistive region formed at the end portion by implanting lightly doped dopants, and a source and drain region located at the peripheral tilted surface of the resistive region for electrically connecting the resistive region to an outer electrode. At the time, the resistive region, and the source and drain region are formed by implanting the second dopants. Preferably, the first and second dopant are a P-type and N-type dopant, respectively.
Abstract translation: 目的：提供一种具有电阻尖端的半导体探针及其制造方法，以及记录信息的方法以及使用其的再现信息的方法，以便能够通过在端部形成半导体电阻区域来检测小表面电荷 的提示。 构成：半导体探针设置有具有第一掺杂剂的尖端（30）和悬臂（41）。 此时，尖端包括通过注入轻掺杂的掺杂剂在端部形成的电阻区域，以及位于电阻区域的外围倾斜表面处的源极和漏极区域，用于将电阻区域电连接到外部电极。 此时，通过注入第二掺杂剂来形成电阻区域和源极和漏极区域。 优选地，第一和第二掺杂剂分别是P型和N型掺杂剂。
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Patent Agency Ranking
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公开(公告)号：KR102081089B1
公开(公告)日：2020-02-25
申请号：KR1020180093707
申请日：2018-08-10
Applicant: 삼성전자주식회사
IPC: H01L25/065 , H01F27/30 , H01L23/528
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公开(公告)号：KR101861765B1
公开(公告)日：2018-05-29
申请号：KR1020110019001
申请日：2011-03-03
Applicant: 삼성전자주식회사
CPC classification number: G02B3/0018 , G02B3/0056 , G02B13/14 , G02B23/14 , G03F7/40
Abstract: 깊이픽셀이개시된다. 상기깊이픽셀은, 입사광을집광하는포토레지스트(photoresist)를포함하는마이크로렌즈, 상기마이크로렌즈에의해집광된입사광의파장들중에서적외선영역의파장들을통과시키는적외선필터, 상기적외선필터에의해통과된적외선영역의파장들에응답하여광전하를생성하는광전변환소자및 상기적외선필터와상기광전변환소자사이에형성되는배선층을포함하고, 상기포토레지스트의점도는 150cp ~ 250cp이다..
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公开(公告)号：KR1020130006168A
公开(公告)日：2013-01-16
申请号：KR1020110068052
申请日：2011-07-08
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A sensor and a data processing system are provided to increase a generation range of an electric field in a side, thereby increasing photoelectron resolution. CONSTITUTION: A sensor(10) includes a depth pixel(16) of 1-tab pixel structure. A photoelectric transformation area generates a photo charge. An insulating layer is implemented on a semiconductor substrate. The semiconductor substrate includes the photoelectric transformation area. A first photo gate and a second photo gate are implemented on the insulating layer.
Abstract translation: 目的：提供传感器和数据处理系统，以增加侧面电场的产生范围，从而提高光电子分辨率。 构成：传感器（10）包括1个突片像素结构的深度像素（16）。 光电转换区产生光电荷。 在半导体衬底上实现绝缘层。 半导体衬底包括光电转换区域。 在绝缘层上实现第一光栅和第二光栅。
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公开(公告)号：KR1020120100232A
公开(公告)日：2012-09-12
申请号：KR1020110019001
申请日：2011-03-03
Applicant: 삼성전자주식회사
CPC classification number: G02B3/0018 , G02B3/0056 , G02B13/14 , G02B23/14 , G03F7/40 , G01B11/22 , G02B3/00 , G02B13/00 , H01L27/14
Abstract: PURPOSE: A micro lens, a depth sensor including the same, and a method for manufacturing the micro lens are provided to prevent the performance degradation of the depth lens. CONSTITUTION: Photo-resist for forming a micro lens(110) is formed on a substrate. The photo-resist is exposed in order to form a photo-resist pattern. The viscosity of the photo-resist is 150 to 250cp. The thickness of the photo-resist is 0.1 to 9.9micrometers. The diameter of the photo-resist is 10 to 99micrometers. A photoelectric conversion element(160) creates a photo charge in response to infrared rays condensed through micro lens. A processer calculates distance of an object according to a signal outputted from a depth sensor.
Abstract translation: 目的：提供微透镜，包括其的深度传感器和用于制造微透镜的方法，以防止深度透镜的性能下降。 构成：在基板上形成用于形成微透镜（110）的光致抗蚀剂。 曝光光致抗蚀剂以形成光刻胶图案。 光致抗蚀剂的粘度为150〜250cp。 光致抗蚀剂的厚度为0.1〜9.9微米。 光致抗蚀剂的直径为10至99微米。 光电转换元件（160）响应通过微透镜会聚的红外线产生光电荷。 处理器根据从深度传感器输出的信号计算物体的距离。
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