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公开(公告)号：KR1020040057407A
公开(公告)日：2004-07-02
申请号：KR1020020084147
申请日：2002-12-26
Applicant: 재단법인서울대학교산학협력재단
IPC: H03K19/0185
CPC classification number: H03K19/018521 , H03K3/356113 , H03K19/0013
Abstract: PURPOSE: A low-power inverter and a level shifter using the same are provided to form a level shifter circuit by using only N-type transistors or P-type transistors. CONSTITUTION: A low-power inverter includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor includes a source for receiving the first power and a gate for receiving a clock signal. The second transistor includes a gate connected to a drain of the first transistor and receives the second power. The third transistor includes a gate for receiving the clock signal and a current path formed between the current path of the second transistor and the first power. The fourth transistor includes a gate connected to a connection node between the second and the third transistors and receives the third power. The fifth transistor includes a gate for receiving the clock signal and the current path formed between the first power and the current path of the fourth transistor. A voltage difference between a gate and a source of the second transistor is controlled by forming differently each clock feed-through effect of the first and the third transistors.
Abstract translation: 目的：提供低功率逆变器和使用其的电平移位器，以通过仅使用N型晶体管或P型晶体管形成电平移位器电路。 构成：低功率逆变器包括第一晶体管，第二晶体管，第三晶体管，第四晶体管和第五晶体管。 第一晶体管包括用于接收第一功率的源和用于接收时钟信号的栅极。 第二晶体管包括连接到第一晶体管的漏极并接收第二功率的栅极。 第三晶体管包括用于接收时钟信号的栅极和形成在第二晶体管的电流路径与第一功率之间的电流路径。 第四晶体管包括连接到第二和第三晶体管之间的连接节点的栅极，并接收第三功率。 第五晶体管包括用于接收时钟信号的栅极和形成在第四晶体管的第一功率和电流路径之间的电流路径。 通过不同地形成第一和第三晶体管的每个时钟馈通效应来控制第二晶体管的栅极和源极之间的电压差。
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公开(公告)号：KR1020040025344A
公开(公告)日：2004-03-24
申请号：KR1020020057281
申请日：2002-09-19
Applicant: 재단법인서울대학교산학협력재단
IPC: G09G3/20
CPC classification number: G09G3/3225 , G09G3/3266 , G09G3/3283
Abstract: PURPOSE: A pixel structure of an active matrix O-LED(Organic Light Emitting Device) is provided to have a uniform light emission characteristics by compensating nonuniform electrical characteristics of a TFT device between pixels. CONSTITUTION: The first and the second switching device select a driving pixel by a scan signal applied from the external, and receive a data current. A capacitor(65) stores charges by a control current applied by the first and the second switching device. The third switching device is selected by the first and the second switching device and writes a data current, and an external power is applied to the third switching device. And a driving device is constituted with a mirror structure with the third switching device, and receives a voltage by the charges stored in the capacitor and applies a current to a corresponding pixel.
Abstract translation: 目的：提供有源矩阵O-LED（有机发光器件）的像素结构，以通过补偿像素之间的TFT器件的不均匀电特性来具有均匀的发光特性。 构成：第一和第二开关器件通过从外部施加的扫描信号来选择驱动像素，并接收数据电流。 电容器65通过由第一和第二开关器件施加的控制电流来存储电荷。 第三开关装置由第一开关装置和第二开关装置选择，并写入数据电流，并且向第三开关装置施加外部电力。 并且驱动装置由具有第三开关装置的反射镜结构构成，并且通过存储在电容器中的电荷接收电压并向相应的像素施加电流。
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公开(公告)号：KR100409233B1
公开(公告)日：2003-12-18
申请号：KR1020000064166
申请日：2000-10-31
Applicant: 재단법인서울대학교산학협력재단
IPC: G02F1/136
Abstract: PURPOSE: A method of fabricating a polysilicon thin film transistor using excimer laser annealing is provided to increase the grain size of a channel of a polysilicon thin film transistor and orderly arrange grain boundaries in order to reduce grain boundary density in the channel. CONSTITUTION: An amorphous silicon thin film is formed on a wafer on which an oxide layer is formed or a glass substrate. A photoresist pattern is formed on a portion of the amorphous silicon thin film, corresponding to a channel region, and impurity ions are implanted into the amorphous silicon thin film. An aluminum thin film pattern is selectively formed on the portion of the amorphous silicon thin film other than the channel region. Excimer laser is irradiated on the amorphous silicon thin film to change the film into a polysilicon thin film. The aluminum pattern is removed and excimer laser is irradiated on the polysilicon thin film to activate the implanted impurity ions. A gate insulating layer is formed on the polysilicon active layer. A gate is formed on the gate insulating layer.
Abstract translation: 目的：提供一种使用准分子激光退火制造多晶硅薄膜晶体管的方法，以增加多晶硅薄膜晶体管的沟道的晶粒尺寸并有序地排列晶界，以便降低沟道中的晶界密度。 构成：在其上形成氧化物层的晶片或玻璃衬底上形成非晶硅薄膜。 在对应于沟道区的部分非晶硅薄膜上形成光致抗蚀剂图案，并将杂质离子注入到非晶硅薄膜中。 在沟道区以外的部分非晶硅薄膜上选择性地形成铝薄膜图案。 准分子激光照射在非晶硅薄膜上以将薄膜变成多晶硅薄膜。 去除铝图案并在多晶硅薄膜上照射准分子激光以激活注入的杂质离子。 在多晶硅有源层上形成栅极绝缘层。 栅极形成在栅极绝缘层上。
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公开(公告)号：KR1020020071574A
公开(公告)日：2002-09-13
申请号：KR1020010011687
申请日：2001-03-07
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L29/78
Abstract: PURPOSE: An SOI(Silicon On Insulator) LDMOSFET(Lateral Double Diffused Metal Oxide Semiconductor Field Effect Transistor) is provided to improve trade-off characteristics of a breakdown voltage and an on-resistance by using a vacuum layer as a buried layer. CONSTITUTION: An SOI LDMOSFET comprises a source electrode(41), a drain electrode(43), a gate electrode(42), a P-body(32) and an N-drift region(30). At this time, a buried layer having a vacuum layer in a defined portion is formed under the P-body(32) and the N-drift region(30). At this time, the buried layer comprises a buried vacuum layer(61) formed with the vacuum layer and a buried oxidation layer(62) formed with an oxidation layer.
Abstract translation: 目的：提供SOI（绝缘体上硅）LDMOSFET（横向双扩散金属氧化物半导体场效应晶体管），通过使用真空层作为掩埋层来提高击穿电压和导通电阻的折衷特性。 构成：SOI LDMOSFET包括源电极（41），漏电极（43），栅电极（42），P体（32）和N漂移区（30）。 此时，在P体（32）和N漂移区（30）的下方形成具有限定部分的真空层的掩埋层。 此时，埋层包括由真空层形成的掩埋真空层（61）和形成有氧化层的掩埋氧化层（62）。
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公开(公告)号：KR101254652B1
公开(公告)日：2013-04-15
申请号：KR1020060062935
申请日：2006-07-05
Applicant: 삼성디스플레이 주식회사 , 재단법인서울대학교산학협력재단
CPC classification number: H02M3/073 , G09G3/3611 , G09G3/3648 , G09G3/3696 , G09G2300/0408 , G09G2300/0426 , G09G2330/02
Abstract: 직류/직류 컨버팅 회로, 이를 갖는 표시장치 및 이의 구동방법에서, 챠지 펌핑부는 외부로부터 입력전압, 제1 및 제2 클럭을 입력받아 입력전압으로부터 제1 및 제2 클럭의 하이전압만큼 펌핑된 제1 및 제2 전압을 제1 및 제2 노드에 출력한다. 출력부는 챠지 펌핑부의 제1 및 제2 노드에 연결되고, 레벨 부스팅부는 제1 및 제2 클럭에 응답하여 챠지 펌핑부를 턴-온 또는 턴-오프시킨다. 제2 노드의 전위에 의하여 제1 클럭의 하이구간동안 출력부는 출력단자에 챠지 펌핑부로부터의 제1 전압을 출력하고, 제1 노드의 전위에 의하여 제2 클럭의 하이구간동안 출력부는 출력단자에 챠지 펌핑부로부터의 제2 전압을 출력한다. 따라서, 제1 및 제2 클럭이 스윙하는 동안 출력단자에는 입력전압보다 2배이상으로 큰 출력전압이 출력될 수 있다.
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Patent Agency Ranking
公开(公告)号：KR101230313B1
公开(公告)日：2013-02-06
申请号：KR1020060062865
申请日：2006-07-05
Applicant: 삼성디스플레이 주식회사 , 재단법인서울대학교산학협력재단
IPC: H03K19/0175 , G09G3/20 , G09G3/36 , G09G3/30
CPC classification number: H03K3/35613 , G09G3/3611 , G09G3/3648 , G09G2300/0408 , G09G2310/0289 , G09G2310/08
Abstract: 본 발명은 레벨 시프터에 대한 것으로서, 이 장치는 주기 신호인 제1 입력 신호 및 그 반전인 제2 입력 신호를 받아 상기 제1 입력 신호와 위상이 동일하고 상기 제1 입력 신호의 전압보다 높은 전압을 가지는 제1 출력 신호 및 상기 제1 입력 신호와 위상이 동일하고 상기 제1 입력 신호의 전압보다 낮은 전압을 가지는 제2 출력 신호를 생성하는 레벨 변환부, 그리고 상기 제1 출력 신호 및 상기 제2 출력 신호를 받아 상기 제1 입력 신호와 위상이 동일하고 상기 제1 입력 신호의 진폭보다 큰 진폭을 가지는 제3 출력 신호를 생성하는 증폭부를 포함한다. 따라서 입력 신호에 대하여 같은 위상을 가지면서도 그 진폭이 입력 신호보다 큰 출력 신호를 얻을 수 있다.
레벨 시프터, 액정 표시 장치, 트랜지스터-
公开(公告)号：KR100878066B1
公开(公告)日：2009-01-13
申请号：KR1020070050848
申请日：2007-05-25
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: G09G3/3225 , G02F1/13624 , G09G3/3648 , G09G2300/0814 , G09G2320/0233
Abstract: 본 발명은 평판 표시 장치에 관한 것으로, 해결하고자 하는 기술적 과제는 평판 표시장치의 유기전계발광소자 또는 액정소자에 전달되는 전류가 누설전류로 인하여 변동되는 것을 방지하고 안정적으로 유지하여, 표시 패널의 화질 열화 현상을 방지하는 데 있다.
이를 위해 본 발명은 주사선에 제어전극이 전기적으로 연결되고, 데이터선과 제1전원전압선 사이에 전기적으로 연결된 제1스위칭 소자와 주사선에 제어전극이 전기적으로 연결되고, 제1스위칭 소자와 제1전원전압선 사이에 전기적으로 연결된 제2스위칭 소자와 제1스위칭 소자와 제2스위칭 소자 사이에 제1전극이 전기적으로 연결된 용량성소자와 제2스위칭 소자에 제어전극이 전기적으로 연결되고, 제1전원전압선과 제2전원전압선 사이에 전기적으로 연결된 구동트랜지스터 및 구동트랜지스터와 제2전원전압선 사이에 전기적으로 연결된 유기전계발광소자를 포함하는 평판 표시 장치를 개시한다.
평판표시장치, OLED, LCD, 누설전류Abstract translation: 本发明中，所要解决的技术问题是，防止传递到有机发光元件或平板显示器变形例的液晶装置的电流，由于泄漏电流和稳定地保持，平板显示装置的显示面板的图像质量 从而防止降解。
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公开(公告)号：KR1020080112621A
公开(公告)日：2008-12-26
申请号：KR1020070061234
申请日：2007-06-21
Applicant: 재단법인서울대학교산학협력재단
Abstract: An organic light emitting diode display is provided to allow organic electro luminescence device of each pixel circuit to radiate the same brightness in response to the same data regardless of the threshold voltage. In an organic light emitting diode display, a control electrode is electrically connected to the scanning line(Scan(1),Scan(2), ...Scan(n)). A switching element(SW) electrically is connected between data line(Data(1),Data(2), ...Data(m)) and the first regular voltage line. A capacitive element(CST) is electrically connected between the switching element and the first regular voltage line. A comparator(COMP) compares the voltage supplied to the switching element with the voltage(VP) applied from the second ground level voltage line(VREF2). The organic electro luminescence device(OLED) is electrically connected between the comparator and the first supply voltage(VSS).
Abstract translation: 提供了一种有机发光二极管显示器，以允许每个像素电路的有机电致发光器件响应于相同的数据而辐射相同的亮度，而不管阈值电压。 在有机发光二极管显示器中，控制电极与扫描线（Scan（1），Scan（2），... Scan（n））电连接。 电连接在数据线（Data（1），Data（2），... Data（m））和第一规则电压线之间的开关元件（SW）。 电容元件（CST）电连接在开关元件和第一正常电压线之间。 比较器（COMP）将提供给开关元件的电压与从第二接地电平电压线（VREF2）施加的电压（VP）进行比较。 有机电致发光器件（OLED）电连接在比较器和第一电源电压（VSS）之间。
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公开(公告)号：KR100841398B1
公开(公告)日：2008-06-26
申请号：KR1020070020391
申请日：2007-02-28
Applicant: 한국원자력연구원 , 재단법인서울대학교산학협력재단
IPC: H01L29/73
Abstract: A method and an apparatus for improving an electrical characteristic of a BRT device are provided to manufacture the BRT device having a high performance switching by irradiating an optimized electron beam on the BRT device. An electron beam is irradiated on a BRT(Base Resistance controlled Thyristor) device to extract a first specific condition value of the electron beam which shortens a lifespan of minor carrier. The electron beam of the extracted first specific condition value is irradiated on other BRT device. The other BRT device is subjected to a thermal annealing process to extract a second specific condition value which increases a threshold voltage. Another BRT device is subjected to the thermal annealing process of the extracted specific condition value.
Abstract translation: 提供一种用于改善BRT装置的电气特性的方法和装置，以通过在BRT装置上照射优化的电子束来制造具有高性能切换的BRT装置。 电子束照射在BRT（基极电阻控制晶闸管）器件上，以提取缩短次要载流子寿命的电子束的第一特定条件值。 提取的第一特定条件值的电子束照射在其他BRT装置上。 对其他BRT器件进行热退火处理，以提取增加阈值电压的第二特定条件值。 对另一BRT装置进行提取的特定条件值的热退火处理。
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公开(公告)号：KR100837335B1
公开(公告)日：2008-06-12
申请号：KR1020060127289
申请日：2006-12-13
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: H01L51/5296 , H01L27/14692 , H01L51/5056 , H01L51/5072 , H01L51/5092 , H01L2027/11879 , H01L2227/32 , H01L2924/1307
Abstract: A pixel circuit of a flat panel display device is provided to prevent the deterioration of a threshold voltage of a driving transistor by executing negative or positive annealing on a driving transistor and turning off an organic light emitting device at the same time. A pixel circuit of a flat panel display device includes first, second, and third switching transistors, a driving transistor(DR_TR), an illumination control transistor(EMI_TR), an organic light emitting device(OLED), and a storage element(Cst). A control electrode of the first switching transistor, which delivers data signals from a data line, is connected to a scan line. A control electrode of the driving transistor is connected to the first switching transistor(SW_TR1). The illumination control transistor, which is connected to the driving transistor, blocks current of the driving transistor. The organic light emitting device, which is connected to the illumination control transistor or the driving transistor, displays images. The storage element, which is connected to the driving transistor, is connected between the driving transistor and the illumination control transistor, The second switching transistor(SW_TR2) is connected between a second electrode of the storage capacitor and the data line. A first electrode of the third switching transistor(SW_TR3) is connected between the first switching and driving transistors and a control electrode thereof is connected to a control electrode of the second switching transistor.
Abstract translation: 提供了一种平板显示装置的像素电路，以通过对驱动晶体管执行负或正退火以同时关闭有机发光器件来防止驱动晶体管的阈值电压的劣化。 平板显示装置的像素电路包括第一，第二和第三开关晶体管，驱动晶体管（DR_TR），照明控制晶体管（EMI_TR），有机发光器件（OLED）和存储元件（Cst） 。 从数据线传送数据信号的第一开关晶体管的控制电极连接到扫描线。 驱动晶体管的控制电极连接到第一开关晶体管（SW_TR1）。 连接到驱动晶体管的照明控制晶体管阻止驱动晶体管的电流。 连接到照明控制晶体管或驱动晶体管的有机发光器件显示图像。 连接到驱动晶体管的存储元件连接在驱动晶体管和照明控制晶体管之间。第二开关晶体管（SW_TR2）连接在存储电容器的第二电极和数据线之间。 第三开关晶体管（SW_TR3）的第一电极连接在第一开关晶体管和驱动晶体管之间，其控制电极连接到第二开关晶体管的控制电极。
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