Abstract:
A micro heater and a manufacturing method thereof are provided to lower the power consumption by maximizing the thermal isolation effect, and to use the micro heater as the excellent infrared light source. A micro heater comprises a heater wiring(130) which is separated from substrate, an electrode pad(140) which authorizes the voltage in the bi end of the heater wiring, and a support pillar(150) which supports the heater wiring. The heater wiring includes an insulating layer which electrically insulates substrate and heater wiring; and a metal layer which is evaporated on the insulating layer and flows current.
Abstract:
본 발명은 유리잉크 코팅법을 이용한 프로브카드용 탐침의 절연방법에 관한 것으로, 보다 자세하게는 고집적화되는 반도체 칩 및 디스플레이 회로검사에 사용되는 프로브카드용 탐침 상호 간에 절연성을 확보하기 위한 방법에 관한 것이다. 본 발명의 유리잉크 코팅법을 이용한 프로브카드용 탐침의 절연방법은 프로브카드용 탐침을 절연하는 방법에 있어서, 도금 또는 에칭 공정으로 탐침을 제작하는 단계; 상기 탐침을 크리닝한 후, 유리잉크를 이용하여 코팅하는 단계; 상기 코팅된 탐침의 양끝을 연마하여 프로브 유닛에 삽입하는 단계; 및 상기 탐침을 에폭시로 고정한 후, 상기 프로브 유닛을 PCB 회로부에 연결시키는 단계를 포함한다. 프로브카드, 탐침, 절연, 유리잉크, 에폭시
Abstract:
A minute pattern transfer apparatus with the variable line path is provided to form the patterns with various line paths by controlling the interval between probes. An ink preserving member(320) preserves ink. An ink transmitting member(330) transmits the ink to a probe member. The probe member(340) transfers the ink introduced from the ink transmitting member. A driving member controls the interval formed at the probe member. The probe member includes a space for preserving the ink transmitted from the ink preserving member. Plural probes(341) transfer the ink. A spring(370) is connected with the probe member in order to support the motion of the probe. Plural probes are formed in parallel to each other. The driving member includes a magnet fixed to the probe member. A coil is located at the upper portion of the magnet and makes the current flow.
Abstract:
An AFM(Atomic Force Microscope) cantilever probe and a method for manufacturing the same are provided to facilitate setting of thickness of the cantilever with the microscopic probe and obtain desired natural resonance frequency of the cantilever. An AFM(Atomic Force Microscope) cantilever probe(200) comprises a handling part(240), a cantilever part(230), a probe part(210), and a probe(220). The handling part is made of a semiconductor substrate. The cantilever is elongated in bar-shape on the bottom of the handling part. The probe part, elongating on one side of the cantilever part, is shaped in vertically projected peak. The probe, provided on the peak of the probe part, makes contact with a surface of an analyzing object.
Abstract:
A probe of an AFM(Atomic Force Microscope) cantilever using a ferroelectric is provided to precisely measure the electric polarization of the ferroelectric by using the ferroelectric in the probe of the cantilever. A probe of an AFM(Atomic Force Microscope) cantilever using a ferroelectric includes a cantilever support(100), an insulation layer(110), a metal layer(120), and a ferroelectric(130). The insulation layer is formed on the cantilever support. The metal layer is formed on the insulation layer. The ferroelectric is formed at the tip head of the metal layer. The ferroelectric has a domain of 180 degrees. The ferroelectric uses a PZT.
Abstract:
PURPOSE: A method for forming a channel of a cantilever for an atomic force microscope having an FET is provided to reduce a width of a channel of the cantilever without using an electric beam lithography process. CONSTITUTION: A method for forming a channel of a cantilever for an atomic force microscope having an FET includes forming a probe at a front end of the cantilever upwardly extending from a supporting part. A channel is formed at a lower region of the probe of the cantilever. At least two insulation layers(120) are stacked on an upper surface of a silicon layer(110) in which first conductive impurities are doped. The channel is formed at the silicon layer(110). The two insulation layers(120) are formed by using mutually different materials.
Abstract:
PURPOSE: A millimeter wave detection sensor is provided to increase sensitiveness of the sensor by comparing a reference voltage for a transition temperature of a temperature sensor with a value of a voltage for a measured heater temperature and adjusting a heater temperature to the transition temperature of the temperature sensor. CONSTITUTION: A millimeter wave detection sensor includes a first antenna(31) and a second antenna(32), a heater(41), a temperature sensor(40), an insulating layer, a first electrode port(61) and a second electrode port(62), a third electrode port(81) and a fourth electrode port(82), and a thermocouple temperature sensor(70). The first antenna(31) and the second antenna(32) are formed on an upper of a silicon substrate(100). The heater(41) is formed between the first antenna(31) and the second antenna(32) such that the heater(41) makes contact with the first antenna(31) and the second antenna(32).
Abstract:
PURPOSE: A diaphram manufacturing method for a micro device is provided to improve the stability of a diaphram structure by forming an octagonal diaphram using an etching mask having a cross type pattern. CONSTITUTION: A low stress etch stop layer(110) is formed on a silicon substrate(100). An etching mask layer(120) is formed at the lower portion of the silicon substrate. A cross type pattern(150) is formed at the center portion of the etch mask layer for partially exposing the silicon substrate. A diaphram for a micro device is formed by carrying out anisotropic etching process on the silicon substrate exposed through the cross type pattern. Preferably, the diaphram of the low stress etch stop layer is the shape of an octagonal structure.
Abstract:
PURPOSE: A microwave power sensor and a fabricating method thereof are provided to perform easily an impedance matching operation by connecting a heating resistor to an input terminal and forming thermocouples at both sides of the heating resistor. CONSTITUTION: A microwave power sensor includes a semiconductor substrate(100), a membrane(20), the first and the second thermocouples(31,32), an RF input terminal(10), a heating resistor(12), the first and the second ground plates(11a,11b), the third ground plate(13), and the first and the second output terminals(51,52). The semiconductor substrate(100) includes an oxide layer. The membrane(20) is formed on a predetermined region of the semiconductor substrate. The first and the second thermocouples(31,32) are formed on the membrane. The RF input terminal(10) is formed on the oxide layer. The heating resistor(12) is connected to the RF input terminal. The first and the second ground plates(11a,11b) are formed on the oxide layer corresponding to both sides of the RF input terminal. The third ground plate(13) is connected to the RF input terminal and the first and the second ground plates. The first and the second output terminals(51,52) are connected to the first and the second thermocouples.
Abstract:
PURPOSE: A micro actuator and a fabrication method thereof are provided, which has an amplified displacement by forming electrodes with different polarity at a zigzag prolonged part. CONSTITUTION: The first and the second anchor(15a,15b) are fixed on the upper part of a substrate(10) by being separated each other. A zigzag prolonged part is formed in a zigzag shape from the first anchor to the second anchor, and is floated from the substrate, and includes a stacked structure of a bottom electrode and a piezoelectric film. The first top electrode group has top electrodes with different polarity by being separated on the piezoelectric film of the zigzag prolonged part prolonged from the first anchor. And the second top electrode group is symmetrical to the first top electrode group, and has top electrodes with different polarity on the piezoelectric film of the zigzag prolonged part prolonged from the second anchor.