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公开(公告)号：KR1020030077792A
公开(公告)日：2003-10-04
申请号：KR1020020016686
申请日：2002-03-27
Applicant: 한국전자통신연구원
IPC: G02B26/00
Abstract: PURPOSE: An optical switching element, a fabricating method thereof, and an array structure thereof are provided to form the optical switching element by using an active matrix method and form a mirror portion by using an X-ray lithography method. CONSTITUTION: An optical switching element includes a substrate, a TFT(300), the first insulating layer, the first driving electrode(440), the second driving electrode(445a), an actuator, a support portion, and a mirror portion. The TFT(300) is formed on the substrate. The TFT(300) is coated with the first insulating layer. The first driving electrode(440) is connected to a drain of the TFT(300). The second driving electrode(445a) is formed at an upper portion of the first insulating layer. The actuator is formed with a conductive layer. The support portion is extended from the actuator. The mirror portion is formed on the support portion.
Abstract translation: 目的：提供一种光开关元件及其制造方法及其阵列结构，通过使用有源矩阵法形成光开关元件，并通过使用X射线光刻法形成镜部。 构成：光开关元件包括基板，TFT（300），第一绝缘层，第一驱动电极（440），第二驱动电极（445a），致动器，支撑部分和反射镜部分。 TFT（300）形成在基板上。 TFT（300）涂覆有第一绝缘层。 第一驱动电极（440）连接到TFT（300）的漏极。 第二驱动电极（445a）形成在第一绝缘层的上部。 致动器形成有导电层。 支撑部分从致动器延伸。 反射镜部分形成在支撑部分上。
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公开(公告)号：KR1020030053424A
公开(公告)日：2003-06-28
申请号：KR1020020080869
申请日：2002-12-17
Applicant: 한국전자통신연구원
IPC: F28D15/02
Abstract: PURPOSE: A micro heat pipe having a section of polygonal structure using protrusion and drawing processes is provided to obtain the micro heat pipe suitable for electronic equipment of small and thin structure. CONSTITUTION: A micro heat pipe is manufactured through a drawing process. The micro heat pipe comprises a pipe having a section of polygonal structure. Each face constituting the polygonal structure is formed as a plane or a curved surface. A liquid actuating fluid flows by the capillary force generated from each edge(101) of the inside of the pipe. One of each face(100) constituting the polygonal structure is plane. The section of the pipe is a triangle or a square. The micro heat pipe is manufactured through a simple drawing process and an extrusion process, and excellent capillary force is secured by changing the structure of the pipe. Accordingly, excellent cooling effect is obtained.
Abstract translation: 目的：提供一种使用突出和拉伸工艺具有多边形结构部分的微型热管，以获得适用于小型和薄型结构的电子设备的微型热管。 构成：通过拉丝工艺制造微型热管。 微型热管包括具有多边形结构部分的管。 构成多边形结构的每个面形成为平面或曲面。 液体致动流体通过从管道内部的每个边缘（101）产生的毛细管力流动。 构成多边形结构的每个面（100）中的一个是平面。 管道的一部分是三角形或正方形。 该微型热管通过简单的拉伸加工和挤压加工制造，通过改变管的结构来确保优异的毛细管力。 因此，获得了优异的冷却效果。
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公开(公告)号：KR100381011B1
公开(公告)日：2003-04-26
申请号：KR1020000067065
申请日：2000-11-13
Applicant: 한국전자통신연구원
IPC: H01L21/205
CPC classification number: B81C1/00936 , H01L21/31111 , H01L21/31116
Abstract: Disclosed is a a method of fabricating a MEMS device by means of surface micromachining without leaving any stiction or residues by etching silicon oxide of a sacrificial layer, which is an intermediate layer between a substrate and a microstructure, rather than by etching silicon oxide of a semiconductor device. The method according to the invention includes the steps of supplying alcohol vapor bubbled with anhydrous HF, maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol, performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water, and removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.
Abstract translation: 公开了一种通过表面微机械加工制造MEMS器件的方法，其通过蚀刻作为衬底和微结构之间的中间层的牺牲层的氧化硅而不留下任何静电或残留物，而不是通过蚀刻半导体的氧化硅 设备。 根据本发明的方法包括以下步骤：供应用无水HF鼓泡的醇蒸气，保持供应装置的温度和无水HF和醇的移动路径高于醇的沸点，进行蒸气 通过将温度和压力控制在水的相平衡图的蒸气区域内并且去除微结构下部的牺牲层的氧化硅来进行蚀刻。
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公开(公告)号：KR1020030023145A
公开(公告)日：2003-03-19
申请号：KR1020010056159
申请日：2001-09-12
Applicant: 한국전자통신연구원
IPC: B81B7/04
CPC classification number: B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00853 , B01J2219/00873 , G01N27/403
Abstract: PURPOSE: A microelectrode, a microelectrode array, and a method for manufacturing microelectrode are provided to improve thermal isolation between a microheater and a substrate and reduce power consumption in a solution. CONSTITUTION: A substrate(1001) has trenches in predetermined depth. A support film(1010) is formed on the substrate to form cavities in the trenches. A sealing film(1013) is formed on the support film to seal the cavities. A plurality of microheaters(1015) is formed of resistant substances generating heat on the sealing film. An insulating film(1017) is formed on the whole structure including the microheaters. A plurality of wires is formed on the insulating film and is connected with the microheaters through contact holes(1016). An electrode is formed on the insulating film and is indirectly heated by the microheaters. A protective film is formed on the whole structure including the electrode and the wires and is patterned to expose parts of the electrode and the wires.
Abstract translation: 目的：提供微电极，微电极阵列和微电极的制造方法，以改善微加热器和衬底之间的热隔离并降低溶液中的功率消耗。 构成：衬底（1001）具有预定深度的沟槽。 在衬底上形成支撑膜（1010）以在沟槽中形成空腔。 在支撑膜上形成密封膜（1013）以密封空腔。 多个微流体（1015）由在密封膜上产生热的抗性物质形成。 在包括微型加热器的整个结构上形成绝缘膜（1017）。 多个导线形成在绝缘膜上，并通过接触孔（1016）与微流体连接。 在绝缘膜上形成电极，并被微细加热器间接加热。 在包括电极和电线的整个结构上形成保护膜，并且被图案化以暴露电极和电线的部分。
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公开(公告)号：KR100276431B1
公开(公告)日：2000-12-15
申请号：KR1019970071626
申请日：1997-12-22
Applicant: 한국전자통신연구원
IPC: H01L21/203 , B82Y10/00
Abstract: PURPOSE: A method for forming a regular silicon quantum dot and a method for manufacturing a super fine semiconductor device using the same are provided to form a finely uniform quantum dot by using an Si PPT(Precipitation) method. CONSTITUTION: A silicon oxide layer(12) is formed on an upper portion of a silicon substrate(10). A metal-silicon alloy layer is deposited on the silicon oxide layer(12). A silicon ion implantation process is performed on the metal-silicon alloy layer by using a mask(32). A fine Si grain is formed by rearranging Si atoms of the metal-silicon alloy layer. The fine Si grain remains by etching only a metal of the metal-silicon alloy layer.
Abstract translation: 目的：提供用于形成常规硅量子点的方法和使用其的超精细半导体器件的制造方法，以通过使用Si PPT（沉淀）法形成精细均匀的量子点。 构成：在硅衬底（10）的上部形成氧化硅层（12）。 在氧化硅层（12）上沉积金属 - 硅合金层。 通过使用掩模（32）在金属 - 硅合金层上进行硅离子注入工艺。 通过重排金属 - 硅合金层的Si原子形成细的Si晶粒。 通过仅蚀刻金属 - 硅合金层的金属来保留细的Si晶粒。
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Patent Agency Ranking
公开(公告)号：KR1020000033148A
公开(公告)日：2000-06-15
申请号：KR1019980049870
申请日：1998-11-20
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A micro flow amount/speed sensor is provided to measure a flow amount and a flow speed of a minute fluid. CONSTITUTION: A micro flow amount/speed sensor of a membrane structure comprises a cavity(102) formed on a silicon substrate(101); a membrane(103) sealing up the cavity(102); a heater(104) formed on the membrane(103) for discharging heat; upper and lower thermopiles(105,106) for respectively measuring temperature variation of the fluid by the heat discharged from the heater(104) in upper and lower streams; and resistance thermal devices(107,108) connected to outer portions of the heater(104) and membrane(103), for measuring a heater temperature and a bulk operation fluid temperature, and compensating for an offset of a sensor measurement value by the thermopile(105,106).
Abstract translation: 目的：提供微流量/速度传感器来测量微量流体的流量和流速。 构成：膜结构的微流量/速度传感器包括形成在硅衬底（101）上的空腔（102）; 密封空腔（102）的膜（103）; 形成在所述膜（103）上用于排热的加热器（104） 上和下热电堆（105,106），用于分别通过在上流和下流中从加热器（104）排出的热量来测量流体的温度变化; 以及连接到加热器（104）和膜（103）的外部的电阻热装置（107,108），用于测量加热器温度和体积操作流体温度，并补偿热电堆的传感器测量值的偏移（105,106 ）。
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公开(公告)号：KR1020000008883A
公开(公告)日：2000-02-15
申请号：KR1019980028947
申请日：1998-07-16
Applicant: 한국전자통신연구원
IPC: H01L29/78
Abstract: PURPOSE: Needle type sensor and its manufacturing method are provided to improve medical sensors such as blood sugar sensor that were conventionally made in a rather bigger size squarely or roundly and needed extra carriers to insert into bodies or to collect blood. CONSTITUTION: Needle model sensor and its manufacturing method stack reinforced metal to avoid bending on SOI(silicon on insulator) wafer board that comprises sacrificial oxide layers and silicon layers sequentially and forms the first dielectric film on the top of it. It forms sensing cells(11,10,12), metal wires and electrode by stacking and patterning a platinum layer and a titanium layer on the top of the first dielectric film. It forms a sensing layer by stacking a biochemical layer or a chemical treated layer on the top metal layer being formed work electrode or gold or Ag2Cl layer on the top metal layer used as reference electrode. It forms the second thick dielectric layer in the external areas to wide the depth of sensor wall part. Needle model sensor and its manufacturing method is manufactured by using fine manufacturing skill removing sacrificing oxide after patterning the outer shape of sensor by using photo engraving process and removing a small part of the second dielectric film to expose sensor cells(11,10,12). It reduces manufacturing cost by simplifying procedures and mass manufacturing.
Abstract translation: 目的：提供针型传感器及其制造方法，以改善传统制造的医疗传感器，例如通常以相当大的尺寸正方形或圆形地制造，并且需要额外的载体插入体内或收集血液。 构成：针型传感器及其制造方法堆叠加强金属，以避免在SOI（绝缘体上硅）晶片板上弯曲，其中包括牺牲氧化物层和硅层，并在其顶部形成第一介电膜。 它通过在第一介电膜的顶部堆叠和图案化铂层和钛层来形成感测单元（11,10,12），金属线和电极。 它通过在形成作为电极的顶部金属层或用作参考电极的顶部金属层上的金或Ag2Cl层上堆叠生化层或化学处理层来形成感测层。 它在外部区域形成第二厚电介质层，以使传感器壁部分的深度变宽。 针模型传感器及其制造方法是通过使用精细制造技术通过使用光刻工艺对传感器的外部形状进行图案化之后去除牺牲氧化物并除去小部分第二电介质膜以暴露传感器单元（11,10,12） 。 通过简化程序和批量生产，可以降低制造成本。
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公开(公告)号：KR1019990051741A
公开(公告)日：1999-07-05
申请号：KR1019970071109
申请日：1997-12-19
Applicant: 한국전자통신연구원
IPC: H01L21/28
Abstract: 본 발명은 구리 박막을 이용한 반도체 소자의 금속 배선 형성 방법에 관한 것으로, 특히 급속열변환에 의한 확산방지막의 형성에 의해 젖음 특성을 확보하고, 금속 배선용 구리 증착 및 급속열처리에 의한 흐름 공정으로 표면의 산화막 형성을 최소화하여 표면 확산과 체 확산 특성을 개선시켜 구리 박막의 미세 홀 특성을 개선하는 방법에 관한 것이다.
본 발명에서는 반도체 소자를 형성하기 위한 여러 요소가 형성된 기판 상부에 층간절연막을 형성한 후, 선택된 영역에 콘택 홀 또는 비아 홀을 형성하고 표면의 산화물 및 불순물 제거하여 내화금속층을 얇은 두께로 증착한다. 이어 암모니아 분위기에서의 급속열변환 공정으로 내화금속의 질화물을 형성하거나, 실리콘의 외향확산에 의해 삼원계화합물을 형성하여 확산방지막을 형성한다. 이후 공정으로 유기화학 증착법 또는 스퍼터에 의해 확산방지막의 상부에 구리 박막을 증착하고, 미세 홀의 상부에 증착된 구리 박막을 급속열처리하여 표면확산과 체 확산을 촉진시켜 미세 홀 내부로 구리를 채워 넣어 금속 배선을 형성한다.-
公开(公告)号：KR1019990050450A
公开(公告)日：1999-07-05
申请号：KR1019970069569
申请日：1997-12-17
Applicant: 한국전자통신연구원
IPC: H01L21/336 , B82Y40/00
Abstract: 본 발명은 테라급 이상의 반도체 소자에 적용가능한 실리콘 양자점 형성방법에 관한 것으로, 실리콘 산화막상에 금속-실리콘 합급층을 형성하고, 이를 열처리하여 미세 실리콘 결정립을 형성하고, 금속을 식각하여 실리콘 산화막상에 실리콘 양자점을 형성한다. 본 발명에 의해 형성되는 실리콘 결정립은 단결정급 결정특성을 갖는 양자점으로서 형성되어, 차세대 나노소자 제조를 위해 적용될 수 있다.
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公开(公告)号：KR1019980050463A
公开(公告)日：1998-09-15
申请号：KR1019960069286
申请日：1996-12-20
Applicant: 한국전자통신연구원
IPC: H01L21/28
Abstract: 본 발명은 확산방지막의 방향성 확보에 의해 상부에 증착되는 금속배선의 배향성 개선으로 전자이주 특성을 개선하는 방법에 관한 것으로, 실리콘 기판위에 확산방지막 또는 seed layer를 열화학 증착 방법이나 스퍼터링, 또는 열변환 등의 방법으로 형성하는 경우, 기판에 직류정원 또는 RF(radio frequency) 바이어스를 인가하여 형성되는 확산방지막이 배향성을 갖도록 하거나 기 형성된 단원계, 이원계 또는 삼원계의 내화금속 및 내화금속 질화물의 플라즈마 처리에 의해 배향성을 확보하여 상부에 고배향의 배선금속이 증착되게 하는 방법이다. 본 발명에서 제시한 확산방지막의 배향성 개선에 의해 전자이주 특성이 우수한 금속배선 구조를 형성할 수 있다.
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