公开(公告)号：KR1020140103514A

公开(公告)日：2014-08-27

申请号：KR1020130016972

申请日：2013-02-18

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 심전자 ,  유원종 ,  이화민 ,  최민섭 ,  최재영

IPC: H01L31/10

CPC classification number: H01L31/1136 ,  H01L31/022408

Abstract: 광민감성이우수하고디바이스전체가플렉서블한광센서가제공된다.

Abstract translation: 本发明涉及二维材料层叠柔性光电传感器。 根据本发明的实施例，二维材料层叠的柔性光电传感器包括：柔性基板; 部分地布置在基板上并由导电材料制成的栅极; 栅极绝缘层，布置在所述栅极和所述基板上以至少覆盖所述栅极; 以及布置在栅绝缘层上并由半导体材料制成的沟道层。

公开(公告)号：KR1020130077405A

公开(公告)日：2013-07-09

申请号：KR1020110146099

申请日：2011-12-29

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 유원종 ,  이대영 ,  장강 ,  라창호 ,  임영대 ,  정현종 ,  최재영

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L29/792 ,  H01L29/4234 ,  H01L29/66833

Abstract: PURPOSE: A memory device consisting of one graphene transistor and a method for manufacturing and operating the same are provided to perform a high speed operation by using a graphene channel. CONSTITUTION: A first, a second, and a third electrode are separated from each other. A graphene layer (34) is in contact with the second and the third electrode. The graphene layer is insulated from the first electrode. The graphene layer is a memory layer. The graphene layer has the density of charge trap sites.

Abstract translation: 目的：提供由一个石墨烯晶体管组成的存储器件及其制造和操作方法，以通过使用石墨烯通道来执行高速操作。 构成：第一，第二和第三电极彼此分离。 石墨烯层（34）与第二和第三电极接触。 石墨烯层与第一电极绝缘。 石墨烯层是记忆层。 石墨烯层具有电荷陷阱位置的密度。

公开(公告)号：KR1020130014183A

公开(公告)日：2013-02-07

申请号：KR1020110076144

申请日：2011-07-29

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  신경식 ,  김상우

IPC: C23C16/448 ,  C23C16/22 ,  H01L31/04 ,  H01L21/205

CPC classification number: Y02E10/50 ,  C23C18/1258 ,  C23C18/1216 ,  H01L31/022466 ,  H01L31/0445 ,  H01L31/1828 ,  Y02E10/549

Abstract: PURPOSE: A manufacturing method of a metal oxide thin film on a graphene is provided to manufacture a metal oxide thin film having an excellent crystallization and conductivity at any temperature without any damage of a grapheme. CONSTITUTION: A manufacturing method of a metal oxide thin films on a graphene comprises the step of obtaining a metal precursor solution by dissolving a metal precursor compound in a low-boiling point solvent, the step of obtaining a liquid drop dispersed in which metal oxide precursors are dispersed in a solvent by the ultrasonic treatment of the metal precursor solution, and the step of absorbing the liquid drop into a graphene wherein the liquid drop sis supplied by a carrier gas into a chamber containing a graphene. The metal precursor compound is at least one kind selected from a group composed of metal acetate, chloride, nitrate and acetic anhydride. The metal precursor compound is at least one kind from a group composed of zinc, copper, aluminum, tin and magnesium. The solvent is water or the low-boiling point solvent. The low-boiling point solvent is at least one kind selected from ethanol and methanol.

Abstract translation: 目的：提供在石墨烯上的金属氧化物薄膜的制造方法，以在任何温度下制造具有优异的结晶和导电性的金属氧化物薄膜，而不会损伤图形。 构成：石墨烯上的金属氧化物薄膜的制造方法包括通过将金属前体化合物溶解在低沸点溶剂中而获得金属前体溶液的步骤，获得分散在其中的金属氧化物前体的液滴的步骤 通过超声波处理金属前体溶液而分散在溶剂中，以及将液滴吸收到石墨烯中的步骤，其中液滴由载气供应到含有石墨烯的室中。 金属前体化合物是选自由金属乙酸盐，氯化物，硝酸盐和乙酸酐组成的组中的至少一种。 金属前体化合物是由锌，铜，铝，锡和镁组成的组中的至少一种。 溶剂是水或低沸点溶剂。 低沸点溶剂为选自乙醇和甲醇中的至少一种。

公开(公告)号：KR1020130014182A

公开(公告)日：2013-02-07

申请号：KR1020110076143

申请日：2011-07-29

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  이영희 ,  한강희

IPC: C01B31/02 ,  C23C16/26 ,  H01B1/04 ,  H01L21/335

CPC classification number: C01B32/186 ,  C23C16/26 ,  H01B1/04

Abstract: PURPOSE: A manufacturing method of graphene is provided to prevent problems in degree of task difficulty due to blocking of a work place by inserting a mesh which has a smaller wire netting than a fluidized bed microbial carrier into a fluidized bed biofilter cask by putting around perimeter of a corporate body. CONSTITUTION: A manufacturing method of graphene comprises the following steps. A mesh(4) with a wire netting smaller than a fluidized bed microbial carrier is inserted into a fluidized bed biofilter cask by wrapping around the perimeter of a combination. The combination comprises a partition and three or more of steel materials(2). The partition(1) is arranged with punched holes which are perpendicular to the height of the fluidized bed biofilter with constant interval of each shift height of the fluidized bed biofilter. The steel materials have the length of the same height of the fluidized bed biofilter which are arranged with constant interval near to edge of partition, and the width of 1-5% of the height.

Abstract translation: 目的：提供石墨烯的制造方法，以通过将具有比流化床微生物载体更小的丝网的网格通过围绕周边插入流化床生物过滤器桶中来防止由于工作场所堵塞而造成的任务困难程度的问题 的组织机构。 构成：石墨烯的制造方法包括如下步骤。 将具有小于流化床微生物载体的网网的网（4）通过缠绕在组合的周边而插入到流化床生物过滤器桶中。 该组合包括隔板和三种或更多种钢材料（2）。 分隔件（1）布置有与流化床生物过滤器的高度垂直的冲孔，其具有流化床生物过滤器的每个移位高度的恒定间隔。 钢材的长度与流动床生物过滤器的高度相同，间隔距离靠近分隔边缘，宽度为1-5％的高度。

公开(公告)号：KR1020130006869A

公开(公告)日：2013-01-18

申请号：KR1020110061796

申请日：2011-06-24

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  안종렬 ,  서정탁

IPC: C01B31/02 ,  B32B18/00 ,  H01B1/04 ,  H01L21/331

CPC classification number: B32B9/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02378 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/778 ,  H01L31/022466 ,  H01L31/1884 ,  H01M4/96 ,  H01M8/0234 ,  H01M8/086 ,  H01M8/1007 ,  H01M8/1011 ,  H01M8/103 ,  H01M8/1041 ,  Y02E10/50 ,  Y02E60/523 ,  Y02P70/56 ,  C01B32/184

Abstract: PURPOSE: A graphene layered structure, a manufacturing method thereof and a transparent electrode and transistor comprising the same are provided to not need separate transcription process and to prevent damages of graphene by directly growing the graphene on an insulator. CONSTITUTION: A manufacturing method of a graphene layered structure comprises: a step of injecting at least one kind of gas ions selected from a nitrogen ion(2) and an oxygen ion, into the surface of a silicon carbide thin film(1) to forming an ion injection layer inside the silicon carbide thin film; a step of heat-treating the silicon carbide thin film for graphenization of the carbide thin film surface layer. The ion injection layer is a nitride silicon layer. The thickness of the ion injection layer is 230 nm or less. The heat-treatment is conducted at 1,000-2,000°C for 0.001-10 hours.

Abstract translation: 目的：提供石墨烯层状结构，其制造方法以及包含该石墨烯层状结构的透明电极和晶体管，以便不需要单独的转录过程，并且通过在绝缘体上直接生长石墨烯来防止石墨烯损坏。 构成：石墨烯层状结构的制造方法包括：将从氮离子（2）和氧离子中选择的至少一种气体离子注入碳化硅薄膜（1）的表面的步骤，以形成 碳化硅薄膜内的离子注入层; 对用于碳化物薄膜表面层的石墨化的碳化硅薄膜进行热处理的步骤。 离子注入层是氮化硅层。 离子注入层的厚度为230nm以下。 热处理在1000〜2000℃进行0.001-10小时。

公开(公告)号：KR1020110133354A

公开(公告)日：2011-12-12

申请号：KR1020100053032

申请日：2010-06-04

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  이영희 ,  한강희

IPC: C01B31/02 ,  B05D5/08 ,  H01B1/04

CPC classification number: C01B32/182 ,  B05D5/086 ,  C01B32/194 ,  H01B1/04

Abstract: PURPOSE: Ultra-hydrophobic graphene and a method for manufacturing the same are provided to improve the conductivity of graphene and to improve the contact angle of the graphene with respect to water by forming a plurality of protruding parts to the graphene. CONSTITUTION: Ultra-hydrophobic graphene includes a plurality of protruding parts. The protruding parts are formed into one shape of a hemi spherical shape, a cylinder shape, a prism shape, or a pyramid shape. The protruding parts occupy about 20 to 80% of the entire surface area of the graphene. The average height of the protruding parts is between about 1um and about 10mm. The average diameter of the protruding parts is between about 0.1um and about 1000um. The intervals of the protruding parts are between about 0.1um and about 1000um. The contact of the graphene with respect to water is between about 90 degrees and about 170 degrees.

Abstract translation: 目的：提供超疏水性石墨烯及其制造方法以提高石墨烯的导电性，并通过向石墨烯形成多个突出部分来改善石墨烯相对于水的接触角。 构成：超疏水石墨烯包括多个突出部分。 突出部分形成为半球形，圆柱形，棱柱形或棱锥形的一种形状。 突出部分占石墨烯整个表面积的约20％至80％。 突出部分的平均高度在约1um至约10mm之间。 突出部分的平均直径为约0.1um至约1000um。 突出部分的间隔在约0.1um至约1000um之间。 石墨烯相对于水的接触在约90度至约170度之间。

公开(公告)号：KR1020110053012A

公开(公告)日：2011-05-19

申请号：KR1020090109796

申请日：2009-11-13

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  한강희 ,  이영희

IPC: B32B9/00 ,  B32B7/12 ,  B32B37/12 ,  C01B31/04

CPC classification number: C01B31/0446 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B27/28 ,  B32B27/32 ,  B32B27/36 ,  B32B27/40 ,  B32B38/10 ,  C01B32/184 ,  C23C16/26 ,  C23C16/44 ,  G09F3/10 ,  H01L21/683 ,  Y10T428/24612 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31678 ,  Y10T428/31855 ,  Y10T428/31971 ,  B32B9/007 ,  B32B37/12 ,  B32B2037/1215 ,  C01B32/194 ,  C01B2204/02 ,  C01B2204/04 ,  H01B1/04 ,  H01B5/14

Abstract: PURPOSE: A method for manufacturing graphene laminate is provided to firmly bind graphene and a substrate and to minimize defect. CONSTITUTION: A graphene laminate contains: a substrate; a binder layer formed on the substrate; and graphene formed on the binder layer. The substrate and graphene are combined by the binder layer. The binder layer is harden from room temperature curable resin, thermosetting resin, hot-melt resin, or pressure sensitive resin. A method for manufacturing the graphene laminate comprises: a step of forming the graphene on a graphite catalyst metal film; a applying a composition for forming the binder layer on one side of the substrate; a step of contacting the substrate and graphite catalyst metal film; a step of hardening the composition to form binder layer; and a step of removing the graphite catalyst metal film.

Abstract translation: 目的：提供用于制造石墨烯层压板的方法，以牢固地结合石墨烯和基底，并使缺陷最小化。 构成：石墨烯层压板包含：基材; 形成在基板上的粘合剂层; 和在粘合剂层上形成的石墨烯。 基底和石墨烯通过粘合剂层组合。 粘合剂层由室温固化树脂，热固性树脂，热熔树脂或压敏树脂硬化。 石墨烯层压体的制造方法包括：在石墨催化剂金属膜上形成石墨烯的工序; 在基材的一面上涂布用于形成粘合剂层的组合物; 使基板和石墨催化剂金属膜接触的工序; 硬化组合物以形成粘合剂层的步骤; 以及去除石墨催化剂金属膜的步骤。

公开(公告)号：KR1020090108459A

公开(公告)日：2009-10-15

申请号：KR1020080033882

申请日：2008-04-11

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 김언정 ,  이영희 ,  최재영 ,  유우종

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/768

CPC classification number: H01L51/002 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  H01L51/0008 ,  H01L51/0048 ,  H01L51/0545

Abstract: PURPOSE: A doping method of a transistor comprising carbon nano tube is provided to easily manufacture a p-type transistor and an n-type transistor according to needs. CONSTITUTION: A field effect transistor(200) includes a source, a drain, a carbon nano tube, and a gate. The carbon nano tube is a channel of the source and the drain. A first voltage is applied to the gate. An ion is absorbed on a surface of the carbon nano tube(20). In the absorbing step, nitronium hexafluoro antimonate solution is contacted on the surface of the carbon nano tube. The solution which is not absorbed on the surface of the carbon nano tube is removed. The ion is absorbed on the surface of the carbon nano tube by drying the substrate.

Abstract translation: 目的：提供一种包含碳纳米管的晶体管的掺杂方法，以便根据需要容易制造p型晶体管和n型晶体管。 构成：场效应晶体管（200）包括源极，漏极，碳纳米管和栅极。 碳纳米管是源极和漏极的通道。 第一电压施加到栅极。 在碳纳米管（20）的表面上吸收离子。 在吸收步骤中，六氟铱硝酸铌溶液在碳纳米管的表面上接触。 去除不被碳纳米管表面吸收的溶液。 通过干燥基底将离子吸收在碳纳米管的表面上。

公开(公告)号：KR1020090009422A

公开(公告)日：2009-01-23

申请号：KR1020070072673

申请日：2007-07-20

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 윤선미 ,  신현진 ,  최재영 ,  최성재 ,  이영희 ,  김기강

IPC: B82B3/00 ,  B82Y40/00 ,  B82Y10/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  H01L51/0048

Abstract: A carbon nanotube(CNT) in which electronic is injected is provided to control easily doping of the carbon nanotube and electrical property such as band-gap etc. by diversifying treatment condition of reducing agent. A carbon nanotube(CNT) in which electronic is injected is generated using a reducing agent, and p-type doped CNT, neutral doped CNT, n-type doped CNT and a mixture thereof. An optical extinction rate of S11/S22 is 0.5 or greater. The reducing agent is a metal hydride, an organic reduction solvent or a hydrogen gas. The metal hydride is a borohydride system or an aluminum hydride. The organic reduction solvent is a hydrazine(N2H4), a glycol or a diol solvent.

Abstract translation: 提供电子注入的碳纳米管（CNT），以通过使还原剂的处理条件多样化来控制碳纳米管的容易掺杂和带隙等电性能。 使用还原剂，p型掺杂CNT，中性掺杂CNT，n型掺杂CNT及其混合物来生成注入电子的碳纳米管（CNT）。 S11 / S22的光消光率为0.5以上。 还原剂是金属氢化物，有机还原溶剂或氢气。 金属氢化物是硼氢化物体系或氢化铝。 有机还原溶剂是肼（N 2 H 4），二醇或二醇溶剂。

公开(公告)号：KR1020080082811A

公开(公告)日：2008-09-12

申请号：KR1020070023590

申请日：2007-03-09

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 최재영 ,  최성재 ,  신현진 ,  윤선미 ,  김기강 ,  이영희

IPC: H01J9/02 ,  H01J11/22 ,  C01B31/02 ,  B82Y40/00

CPC classification number: H01L31/022466 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/06 ,  C01B2202/28 ,  H01L31/1884 ,  H01L51/102 ,  H01L51/444 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521 ,  H01J9/025 ,  H01J11/22

Abstract: A transparent electrode having a CNT(Carbon Nano Tube) and a method for manufacturing the transparent electrode are provided to improve electrical conductivity of the transparent electrode by increasing an amount of defects of the CNT. A transparent electrode includes a CNT, whose ID/IG value is greater than 0.25. The ID and IG are integration values on D and G bands, respectively, which are obtained by adopting a Raman spectroscopy. The ID/IG value of the CNT lies between 0.25 and 1.00. The CNT is a single-wall CNT, a thin multi-wall CNT, a multi-wall CNT, or a combination thereof. A mean length of the CNT lies between 0.1 and 500 mum. A solar cell includes a semiconductor electrode(10), an electrolyte layer(13), and a counter electrode(14).

Abstract translation: 提供具有CNT（碳纳米管）的透明电极和透明电极的制造方法，通过增加CNT的缺陷量来提高透明电极的导电性。 透明电极包括ID / IG值大于0.25的CNT。 ID和IG分别是通过采用拉曼光谱法获得的D和G带上的积分值。 CNT的ID / IG值在0.25和1.00之间。 CNT是单壁CNT，薄多壁CNT，多壁CNT或其组合。 CNT的平均长度在0.1和500μm之间。 太阳能电池包括半导体电极（10），电解质层（13）和对电极（14）。