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    RECORDING MATERIALS WITH NEW HYDROPHILIC PROTECTIVE COATINGS FOR USE IN ELECTROEROSION PRINTING
    61.
    发明专利
    RECORDING MATERIALS WITH NEW HYDROPHILIC PROTECTIVE COATINGS FOR USE IN ELECTROEROSION PRINTING 未知

    公开(公告)号：CA1232135A

    公开(公告)日：1988-02-02

    申请号：CA477501

    申请日：1985-03-26

    Applicant: IBM

    Inventor： SACHDEV G KRISHNA ,  AFZALI-ARDAKANI ALI ,  PENNINGTON S KEITH ,  COHEN S MITCHELL

    IPC: G06K15/14 ,  B41M5/24 ,  B41N3/03 ,  C10M107/24 ,  C25F3/02

    Abstract: RECORDING MATERIALS WITH NEW HYDROPHILIC PROTECTIVE COATINGS FOR USE IN ELECTROEROSION PRINTING Electroerosion recording materials for "direct negative" and "offset master" are provided with a surface protective coating of solid conductive lubricant dispersed in a hydrophilic, crosslinked polymeric matrix. The protective films are especially useful where direct offset masters are produced without removal of noneroded lubricant film. The recording medium of this invention provides use as a defect-free "direct negative" and/or "direct offset master", without requiring the removal of the overlayer prior to use on the printing press. The protective coatings are applied from aqueous dispersions of polymerparticulate compositions and thus avoiding the use of organic solvents.

    SCRATCH RESISTANT RECORDING MATERIALS FOR ELECTROEROSION PRINTING NOT REQUIRING A LUBRICANT OVERCOAT
    62.
    发明专利
    SCRATCH RESISTANT RECORDING MATERIALS FOR ELECTROEROSION PRINTING NOT REQUIRING A LUBRICANT OVERCOAT 未知

    公开(公告)号：CA1221834A

    公开(公告)日：1987-05-19

    申请号：CA467385

    申请日：1984-11-08

    Applicant: IBM

    Inventor： AFZALI-ARDAKANI ALI ,  COHEN MITCHELL S ,  PENNINGTON KEITH S ,  SACHDEV KRISHNA G

    IPC: B41M5/24 ,  B41N1/14 ,  G01D15/34

    Abstract: SCRATCH RESISTANT RECORDING MATERIALS FOR ELECTROEROSION PRINTING NOT REQUIRING A LUBICANT OVERCOAT Electroerosion recording materials of superior scratch resistance are provided without the need for a lubricant overcoat by incorporating a hard, luricating hydrophobic polymer layer between the support and the removable, thin conductive layer to reduce plastic deformation of the support under stylus writing pressure. The intermediate polymer layer provides a highly adhering surface for the overlying aluminum film and contains graphite fluoride and/or fluorocarbon resins such as TeflonR and hard particles such as silica. The materials may be used in various printing processes including making directly readable images, direct negatives and wear resistant offset printing masters.

    SELECTIVE PLACEMENT OF CARBON NANOTUBES
    65.
    发明专利
    SELECTIVE PLACEMENT OF CARBON NANOTUBES 未知

    公开(公告)号：CA2847579C

    公开(公告)日：2021-02-23

    申请号：CA2847579

    申请日：2012-08-30

    Applicant: IBM

    Inventor： AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  PARK HONGSIK

    IPC: C01B32/158 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  C01B32/174

    Abstract: There is disclosed a method of forming a structure having selectively placed carbon nanotubes ("CNTs") on a substrate to minimize bundling and areas of low density. In a first aspect, the method comprises: providing a substrate having a surface; contacting the surface of the substrate and a solution of a precursor molecule to form a self-assembled monolayer having a first ionic charge moiety on the surface; forming a plurality of CNTs having a second ionic charge moiety oppositely charged to the first ionic charge moiety by (1) bonding the plurality of CNTs with an organic molecule having a carboxylic acid ester group to form a plurality of functionalized CNTs, and (2) converting the carboxylic acid ester group to the second ionic charge moiety; and contacting the self-assembled monolayer and a dispersion of the plurality of CNTs having the second ionic charge moiety.

    Use of dihydrotetraazapentacenes as n-dopant in nano components of field effect transistors
    66.
    发明专利
    Use of dihydrotetraazapentacenes as n-dopant in nano components of field effect transistors 未知

    公开(公告)号：GB2497176A

    公开(公告)日：2013-06-05

    申请号：GB201220382

    申请日：2012-11-13

    Applicant: IBM

    Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN

    IPC: H01L51/00 ,  H01L51/05

    Abstract: A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene (Fig., each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group) to produce a stable n-doped nano-component. Dihydrotetraazapentacene may be applied in solution with DMSO, DMF or NMP as solvent. The nano-component is preferably a carbon nanotube, a semi-conductor nanotube, semiconductor nanocrystal, a semiconductor nanowire or it comprises elements of groups III, IV, V and VI.

    Graphene and carbon nanotube field effect transistor
    67.
    发明专利
    Graphene and carbon nanotube field effect transistor 未知

    公开(公告)号：GB2497175A

    公开(公告)日：2013-06-05

    申请号：GB201220379

    申请日：2012-11-13

    Applicant: IBM

    Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

    IPC: H01L51/00 ,  H01L51/05

    Abstract: A method for doping a graphene and carbon nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode, comprising; selectively applying a dopant to a metal contact region of a graphene and nanotube field-effect transistor device. Also disclosed are graphene and nanotube thin-film, field effect transistors: where the dopant is disposed on the graphene/nanotube layer 140 and the metal electrodes formed thereafter; and where the graphene/nanotube layer is formed over the metal electrodes and the dopant is selectively applied to the areas above the dopant, respectively. The dopant may be one of cerium ammonium nitrate, cerium ammonium sulphate, ruthenium bipyridyl complex or triethyloxonium hexachloro antimonate. The dopant may be provided in a solution, where the solvent may be one of dichloroethane, alcohol or dichlorobenzene. The dopant may be applied to the transistor by immersing the transistor in the solution for a predetermined time.

    Doped graphene films with reduced sheet resistance
    69.
    发明专利
    Doped graphene films with reduced sheet resistance 未知

    公开(公告)号：GB2496347A

    公开(公告)日：2013-05-08

    申请号：GB201303286

    申请日：2011-06-07

    Applicant: IBM

    Inventor： BOL AGEETH ANKE ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN

    IPC: H01B1/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  H01L51/00 ,  H01L51/44

    Abstract: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.

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