公开(公告)号：JP2007271775A

公开(公告)日：2007-10-18

申请号：JP2006095313

申请日：2006-03-30

Applicant: Hoya Corp ,  Hoya Electronics Malaysia Sdn Bhd ,  Hoya株式会社 ,  ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad

Inventor： MITSUI MASARU ,  ASAKAWA TAKASHI

IPC: G03F1/00 ,  G03F1/46 ,  G03F1/50 ,  G03F1/54

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank suitable to a photomask for FPD, and the photomask. SOLUTION: The mask blank 10 is for manufacturing an FPD device, and has a substrate 12, a light shield film 14 formed on the substrate 12 by using metal silicide as a material, and an upper-layer film 16 formed on the light shield film 14 by using a material containing chromium. The light shield film 14 and upper-layer film 16 are films to be wet-etched by using an etching mask obtained by patterning a resist film 18 formed on the upper-layer film 16, and the resist film 18 is formed by discharging resist liquid onto the upper-layer film 16 from a nozzle having a resist liquid supply hole extending in one direction and also simultaneously moving the nozzle in a direction crossing the one direction relatively to the upper-layer film surface. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供适用于FPD的光掩模的掩模空白和光掩模。 解决方案：掩模坯料10用于制造FPD器件，并且具有基板12，通过使用金属硅化物作为材料形成在基板12上的遮光膜14和形成在其上的上层膜16 遮光膜14通过使用含铬材料。 遮光膜14和上层膜16是通过使用通过对形成在上层膜16上形成的抗蚀剂膜18进行图案化而获得的蚀刻掩模进行湿蚀刻的膜，并且通过将抗蚀剂液体 从具有在一个方向上延伸的抗蚀剂液体供给孔的喷嘴到上层膜16上，并且同时沿着与上层膜表面相对于该一个方向的方向同时移动喷嘴。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006268035A

公开(公告)日：2006-10-05

申请号：JP2006049425

申请日：2006-02-25

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SANO MICHIAKI

IPC: G03F1/50 ,  G03F1/54 ,  G03F1/60 ,  G03F1/68 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a halftone film type gray tone mask having an excellent pattern shape and cross-sectional shape, and a method for manufacturing it. SOLUTION: The method for manufacturing a gray tone mask having a pattern consisting of a light shielding part, a translucent part, and a semi-translucent part comprises: a process for forming a first resist pattern 23a on a light shielding film 22 formed on a transparent substrate 21; a process for forming a light shielding film pattern 22a by etching the light shielding film using the resist pattern as a mask; a process for forming a semi-translucent film 24 on the light shielding film pattern 22a, and forming a second resist pattern 23b on it, and a process for forming a semi-translucent film pattern 24a by etching the semi-translucent film using the resist pattern as a mask. The material of the semi-translucent film has an etching rate higher than the material of the light shielding film, to an etchant for etching the semi-translucent film. For example, the light shielding film is of the material of which principal component is Cr, and the semi-translucent film is of the material which contains Cr and N. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供具有优异的图案形状和截面形状的半色调薄膜型灰度调色剂及其制造方法。 解决方案：具有由遮光部分，半透明部分和半透明部分组成的图案的灰色调掩模的制造方法包括：在遮光膜22上形成第一抗蚀剂图案23a的工艺 形成在透明基板21上; 通过使用抗蚀剂图案作为掩模蚀刻遮光膜来形成遮光膜图案22a的工艺; 在遮光膜图案22a上形成半透明膜24并在其上形成第二抗蚀剂图案23b的工艺，以及通过使用抗蚀剂蚀刻半透明膜来形成半透明膜图案24a的工艺 模式作为面具。 半透明膜的材料具有比遮光膜的材料高的蚀刻速率，蚀刻到半透明膜的蚀刻剂。 例如，遮光膜是主要成分为Cr的材料，半透明膜是含有Cr和N的材料。版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005194581A

公开(公告)日：2005-07-21

申请号：JP2004002524

申请日：2004-01-07

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SUZUKI TOSHIYUKI

IPC: B32B9/00 ,  B32B17/06 ,  C23C14/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/32 ,  C23C14/34 ,  G03F1/50 ,  G03F1/68 ,  G03F9/00 ,  H01L21/027 ,  G03F1/08

CPC classification number: C23C14/3407 ,  C23C14/0641 ,  C23C14/225 ,  G03F1/32 ,  G03F1/68

Abstract: PROBLEM TO BE SOLVED: To prevent or reduce occurrence of foreign matter derived from a bonding agent in the case a phenomenon that the bonding agent is eluted occurs by the influence of heat applied to the bonding agent and by the influence of gravity applied to the bonding agent.
SOLUTION: A sputtering target for producing a mask blank has a backing plate 5 having a structure where the part to be joined to a target material 4 is projected to a base part 5' and a whole shape has a projected shape, and has a structure where the target material 4 having a surface area larger than that of the part to be joined with the target material 4 in the backing plate 5 is bulged from the part to be joined to the target material 4 over all the periphery, and they are joined in such a manner that a bonding agent 30 is interposed in the part to be joined with the target material 4. Metal 40 is stuck to the recessed part formed by the combination of the two structures for sealing the elution of the bonding agent 30, and, preferably, for preventing the cooling efficiency in the bulged part of the target material 4 from being damaged. The method of producing a mask blank uses the target.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了防止或减少粘合剂产生的异物，在粘合剂洗脱发生的现象是通过施加到粘合剂的热的影响和施加的重力的影响而发生的 粘合剂。 解决方案：用于制造掩模坯料的溅射靶具有背板5，该背板5具有将要被接合到目标材料4的部分突出到基部5'并且整个形状具有突出形状的结构， 具有如下结构：其中表面积大于背衬板5中与目标材料4的部分的表面积的目标材料4在所有周边上从待接合的部分向目标材料4隆起，并且 它们以在接合目标材料4的部分中插入粘合剂30的方式接合。金属40粘附到由两个结构的组合形成的凹部，用于密封粘合剂的洗脱 30，并且优选地，用于防止目标材料4的凸出部分中的冷却效率被损坏。 制造掩模坯料的方法使用目标。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH10148929A

公开(公告)日：1998-06-02

申请号：JP9804597

申请日：1997-03-31

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  OKADA KIMIHIRO ,  SUDA HIDEKI

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To obtain a phase shift mask having excellent film characteristics, such as weatherability, light resistance, electrical conductivity and refractive index by constituting light translucent parts of thin films consisting of materials consisting of nitrogen, metals and silicon as main constituting elements and specifying the content of the silicon to atom ratios of a specific range. SOLUTION: The mask patterns to be formed on the transparent substrate 1 of the mask for exposure of fine patterns comprises light transparent parts 2 to allow the transmission of the light of the intensity contributing to the exposure and light translucent parts 3 to allow the transmission of the light of the intensity not contributing to the exposure. The phase of the light transmitted through the light translucent parts 3 is shifted to vary the phase of the light transmitted through the light translucent parts 3 from the phase of the light transmitted through the light transparent parts 2, by which the light rays transmitted near the boundaries of the light translucent parts 3 and the light transparent parts 2 are negated with each other. The light translucent parts 3 are composed of the thin films consisting of materials contg. the nitrogen, metals and silicon as the main constituting elements and the content of the silicon is specified to 34 to 60atom.%.

公开(公告)号：JPH0551893B2

公开(公告)日：1993-08-03

申请号：JP4546987

申请日：1987-02-28

Applicant: HOYA CORP

Inventor： SUGIHARA OSAMU ,  KAWAI HISAO ,  MITSUI MASARU

IPC: G03F1/00 ,  G03F1/50 ,  G03F1/54 ,  G03F1/58 ,  H01L21/027 ,  G03F1/08

公开(公告)号：JPH049847A

公开(公告)日：1992-01-14

申请号：JP11029890

申请日：1990-04-27

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  MAEDA YOSHIO ,  USHIDA MASAO

IPC: G03F1/46 ,  G03F1/50 ,  H01L21/027

Abstract: PURPOSE:To prevent the degradation in sectional shape at the time of overetching by incorporating a chromium carbide, chromium nitride and chromium oxide into an antireflection film and decreasing the degree of oxidation of the antireflection film from a light transparent substrate toward a light shieldable thin film in the thickness direction thereof. CONSTITUTION:The 1st antireflection film 2 consists of the chromium carbonitrooxides and the degree of the oxidation thereof decreases from the light transparent substrate 1 toward the light shieldable thin film 3 in the thickness direction thereof. The degree of the oxidation of the antireflection film 2 is changed in the film thickness direction, by which the side etching rate is suppressed and the prescribed sectional shape is obtd. The etching rate of the antireflection film 2 is matched with the etching rate of the light shieldable thin film 3 laminated thereon by carbonizing the chromium. The formation of the film to the overhang-like sectional shape is prevented in this way.

公开(公告)号：JPH03116147A

公开(公告)日：1991-05-17

申请号：JP25484589

申请日：1989-09-29

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: G03F1/50 ,  G03F1/54 ,  G03F1/58 ,  G03F1/60 ,  H01L21/027

Abstract: PURPOSE:To achieve satisfactory adhesion of a resist film onto a light-shielding thin film by allowing a metal thin film on the light-shielding thin film to have properties that it adheres to the resist film applied at the time of the manufacture of a photomask, and that etching can be performed through an etching process at the time of the manufacture. CONSTITUTION:The photomask blank 1 is provided with the light-shielding thin film 3 made of metal silicate on the main surface of a translucent substrate 2 made of quartz glass and also the metal thin film 4 is provided on the light- shielding thin film 3. The metal thin film 4 has the properties that it adheres to a photoresist 5, particularly the photoresist of the positive type, and also has the properties that etching can be performed on it through the etching process. Thus, when the photomask 8 is formed from the photomask blank 1, the photoresist film 5 can be adhered to the light-shielding thin film 3 satisfac torily via the metal thin film 4 without the use of adhesion promoting agent.

公开(公告)号：JPS5998407A

公开(公告)日：1984-06-06

申请号：JP20915082

申请日：1982-11-29

Applicant: HOYA CORP

Inventor： KASAMA KOUTAROU ,  MITSUI MASARU

IPC: H01B13/00 ,  H01B5/14

公开(公告)号：JP2010256937A

公开(公告)日：2010-11-11

申请号：JP2010181945

申请日：2010-08-16

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： TANABE MASARU ,  MITSUI MASARU

IPC: G03F1/50 ,  G03F1/54 ,  H01L21/027

CPC classification number: G03F1/72 ,  G03F1/60

Abstract: PROBLEM TO BE SOLVED: To provide a gray-tone mask blank for a liquid crystal display device to which wet etching is applied. SOLUTION: The gray-tone mask blank for the liquid crystal display device to which wet etching is applied consists of: a translucent substrate constituted of synthetic quartz glass; a semi-translucent film formed on the surface of the translucent substrate; and a light-shielding film formed on the semi-translucent film. The semi-translucent film is made of a material containing molybdenum and silicon, and the ratio (molybdenum:silicon) of molybdenum and silicon contained in the semi-translucent film is 1:2-1:19. In addition, the light-shielding film is made of a material containing chrome and nitrogen. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为应用湿式蚀刻的液晶显示装置提供灰色调色掩模。 解决方案：应用湿蚀刻的液晶显示装置的灰色掩模坯料包括：由合成石英玻璃构成的透光性基板; 形成在透光性基板的表面上的半透明膜; 以及形成在半透明膜上的遮光膜。 半透明膜由含有钼和硅的材料制成，并且半透明膜中所含的钼和硅的比例（钼：硅）为1：2-1：19。 此外，遮光膜由含有铬和氮的材料制成。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010250344A

公开(公告)日：2010-11-04

申请号：JP2010140450

申请日：2010-06-21

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SUZUKI HISAYUKI ,  ISHIHARA SHIGENORI

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/58 ,  G03F1/32 ,  G03F1/54

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask blank which can efficiently reduce film stress. SOLUTION: The method for manufacturing a photomask blank having at least a film for forming a mask pattern on a transparent substrate includes a film forming process for sputter-forming the film for forming the mask pattern by causing a sputtering atmosphere to contain at least helium gas and a process for heating the transparent substrate during or after the film forming process. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可有效降低膜应力的光掩模坯料的制造方法。 解决方案：用于制造具有至少一个用于在透明基板上形成掩模图案的膜的光掩模坯料的方法包括用于通过使溅射气氛包含在...中而形成掩模图案的膜溅射成膜的成膜方法 最小氦气和在成膜过程中或之后加热透明基底的方法。 版权所有（C）2011，JPO＆INPIT