RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2002229192A

    公开(公告)日:2002-08-14

    申请号:JP2001027408

    申请日:2001-02-02

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a new radiation sensitive acid generating agent capable of giving positive and negative radiation sensitive resin compositions having high transparency particularly to far UV typified by ArF excimer laser light (193 nm wavelength) and excellent in sensitivity, resolution, pattern shape, etc., and to provide positive and negative radiation sensitive resin compositions containing the radiation sensitive acid generating agent. SOLUTION: The radiation sensitive acid generating agent is typified, e.g. by a compound having a sulfonium cation of formula (1), (2) or (3) and C4F9SO3- as a counter anion. The positive radiation sensitive resin composition contains the radiation sensitive acid generating agent and an acid dissociable group- containing resin. The negative radiation sensitive resin composition contains the radiation sensitive acid generating agent, an alkali-soluble resin and a crosslinker.

    RADIATION SENSITIVE RESIN COMPOSITION
    62.
    发明专利

    公开(公告)号:JP2002182393A

    公开(公告)日:2002-06-26

    申请号:JP2001303791

    申请日:2001-09-28

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high transparency to radiation, having excellent sensitivity, resolution, dry etching resistance, pattern shape, etc., and having small temperature dependence in heating after exposure. SOLUTION: The radiation sensitive resin composition contains (A) a resin comprising a copolymer of (meth)acrylic esters having an acid dissociable group- containing alicyclic structure represented by 5-t-butoxycarbonylnorbornyl (meth) acrylate and 8-t-butoxycarbonyltetracyclododecane (meth)acrylate and (meth) acrylic esters having a lactone-containing heterocyclic structure typified by compounds of formula (1) and (B) a radiation sensitive acid generating agent represented by 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium perfluoro-n- octanesulfonate, 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium nonafluoro-n- butanesulfonate or the like.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2002072484A

    公开(公告)日:2002-03-12

    申请号:JP2001108824

    申请日:2001-04-06

    Applicant: JSR CORP IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a new radiation sensitive resin composition having high transparency to radiation, having excellent basic properties as a resist, e.g. sensitivity, resolution and pattern shape, not causing development defects in microfabrication and capable of producing semiconductor devices in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) an acid dissociable group-containing resin having a structure of formula (1) (where R1 is H, a monovalent acid dissociable group, an alkyl having no acid dissociable group or an alkylcarbonyl having no acid dissociable group; X1 is a 1-4C linear or branched fluoroalkyl; and R2 is H, a linear or branched alkyl or a linear or branched fluoroalkyl) and (B) a radiation sensitive acid generating agent.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2002023371A

    公开(公告)日:2002-01-23

    申请号:JP2000204223

    申请日:2000-07-05

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a new radiation sensitive resin composition having high transparency to radiation, excellent in basic physical properties as a resist such as sensitivity, resolution and pattern shape, not causing development defects in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) a resin having at least one heterocyclic structure of formula (1) (where R1 is H, a 1-6C linear, branched or cyclic alkyl, a 1-6C linear, branched or cyclic alkoxy or a 2-7C linear, branched or cyclic alkoxycarbonyl) in a side chain and (B) a radiation sensitive acid generating agent.

    POSITIVE TYPE RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2001330959A

    公开(公告)日:2001-11-30

    申请号:JP2000151175

    申请日:2000-05-23

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a positive type radiation sensitive resin composition having high transparency to radiation, excellent in resolution, sensitivity, pattern shape, etc., causing no development defect in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The positive type radiation sensitive resin composition contains (A) an alkali-insoluble or slightly alkali-soluble acid dissociable group-containing resin having a structure of formula (1) [where R1 is H, a 1-5C linear or branched alkyl or a 1-5C linear or branched alkoxyl] and/or a structure of formula (2) [where Z is a 4-20C trivalent alicyclic hydrocarbon group or its substituted derivative and X is a single bond or a 1-5C divalent organic group] and convertible to an alkali-soluble resin when the acid dissociable group is dissociated and (B) a radiation sensitive acid generating agent.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2001188347A

    公开(公告)日:2001-07-10

    申请号:JP2000137757

    申请日:2000-05-10

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent in shelf stability, having high transparency to radiation and excellent also in basic physical properties as a resist such as dry etching resistance, sensitivity, resolution and pattern shape. SOLUTION: The radiation sensitive resin composition contains (A) an acid- dissociable group-containing resin having repeating units derived from a (meth) acrylic acid derivative having an alicyclic skeleton containing an oxygen- or nitrogen-containing polar group typified by 3-hydroxy-1-adamantyl (meth)acrylate or 3-(8'-cyanotetracyclo[4.4.0.12,5.17,10]dodecyl (meth)acrulate and repeating units derived from another (meth)acrylic acid derivative having an alicyclic skeleton typified by 2-methyl-2-adamantyl (meth)acrylate and convertible to an alkali- soluble resin when the acid-dissociable group is dissociated and (B) a radiation sensitive acid generating agent.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2001147535A

    公开(公告)日:2001-05-29

    申请号:JP32973999

    申请日:1999-11-19

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent in dry etching resistance, sensitivity, resolution, etc., as a chemical amplification type resist, capable of avoiding a change of the line width of a resist pattern due to a change of the time elapsed from exposure to post-exposure heating and having superior process stability. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin which is made alkali-soluble when the acid dissociable group is dissociated and (B) a radiation sensitive acid generating agent. The component A is typified by a copolymer of a norbornene derivative typified by 8- hydroxytetracyclo[4.4.0.12,5.17,10]dodec-3-ene, itaconic anhydride and a (meth) acrylic acid derivative typified by a compound of formula 1.

    RADIATION SENSITIVE RESIN COMPOSITION

    公开(公告)号:JP2001109157A

    公开(公告)日:2001-04-20

    申请号:JP29129199

    申请日:1999-10-13

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin composition having high transparency to radiation as a chemical amplification type resist, excellent in basic physical properties as a resist such as dry etching resistance, sensitivity, resolution and pattern shape, causing no development defects in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or hardly alkali-soluble acid-dissociable group-containing resin typified by a resin having repeating units of the below formula 1 and (B) a radiation sensitive acid generating agent. The resin A is made alkali-soluble when the acid-dissociable group is dissociated.

    POLAR NORBORNENE DERIVATIVE/MALEIC ANHYDRIDE COPOLYMER

    公开(公告)号:JPH11228637A

    公开(公告)日:1999-08-24

    申请号:JP5269398

    申请日:1998-02-19

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain the subject copolymer having alicyclic groups and acid- cleavable polar organic groups, having high radiation penetrability, excellent dry etching resistance, excellent adhesivity, etc., and useful for optical materials, electronic materials, etc. SOLUTION: This polar norbornene derivative/maleic anhydride copolymer comprises repeating units of formula I (X and Y are each H or a 4-20C acid- cleavable organic group; A and B are each H or a 1-4C alkyl) preferably in an amount of 60-40 mol.% and repeating units of formula II preferably in an amount of 40-60 mol.%, and has a polystyrene-converted weight-average mol.wt. of 1,000-1,000,000. The copolymer is obtained by radically copolymerizing at least one kind of norbornene derivative of formula III [for example, 8-t- butoxycarbonyltetracyclo(4.4.0.1 , .1 , )dodeca-3-ene] with maleic anhydride and, if necessary, one or more other copolymerizable unsaturated compound [for example, bicyclo(2.2.1)hept-2-enel.

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