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    MICROMECHANICAL COMPONENT AND METHOD FOR PRODUCING SAME
    61.
    发明申请
    MICROMECHANICAL COMPONENT AND METHOD FOR PRODUCING SAME 审中-公开
    微机械结构及相应方法

    公开(公告)号：WO03037782A2

    公开(公告)日：2003-05-08

    申请号：PCT/DE0203283

    申请日：2002-09-05

    Applicant: BOSCH GMBH ROBERT ,  LAERMER FRANZ

    Inventor： LAERMER FRANZ

    IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5712 ,  G01P15/00

    CPC classification number: G01C19/5712 ,  B81B3/0086 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/033 ,  B81C1/00801 ,  B81C2201/0104 ,  B81C2201/016

    Abstract: The invention concerns a micromechanical component comprising a substrate (17) whereon is deposited a micromechanical functional layer (15) made of a first material. The invention is characterized in that the functional layer (15) includes first and second zones (15a, 15c) which are linked by a third zone (15b; 220a,b; 320a,b; 420a-d; 520; 520a-h) made of a second material (20). At least one of the zones (15a or 15b; 220a,b; 320a,b; 420a-d; 520; 520a-h or 15c) forms part of a mobile structure (32) which is suspended above the substrate (17). The invention also concerns a method for producing such a micromechanical component.

    Abstract translation: 本发明提供一种具有基板（17）的微机械部件; 一个提供的第一材料的微机械的功能层（15）在基板（17）的上方; 其中，具有第一和第二区域中的功能层（15）（15℃15A），所述第三区域（15B; 220A，B; 320A，B; 420A-D; 520; 520A-H）的第二材料（20） 联系; 其中，所述区域中的至少一个（15A，15B; 220A，B; 320A，B; 420A-D; 520; 520A-H或15C）的可动结构（32），其在所述衬底上（17）挂起来的部分 ， 本发明还提供了相应的制造方法。

    MICROSTRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
    62.
    发明申请
    MICROSTRUCTURE AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    微观结构和方法及其

    公开(公告)号：WO01096232A1

    公开(公告)日：2001-12-20

    申请号：PCT/DE2001/002237

    申请日：2001-06-13

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0086 ,  B81B2203/033 ,  B81C2201/016

    Abstract: The invention relates to a single crystal doped silicon microstructure comprising at least one functional element (2.1, 2.2) and placed in a substrate (1). Also disclosed is the method for producing said microstructure. According to the invention, the functional element (2.1, 2.2) is mechanically and electrically separated from the substrate on all sides by means of insulating gaps (5, 5a), and is connected in at least one position to a first structure (4a) of an electrically conductive layer (S) which is electrically insulated from the substrate (1) by means of an insulating layer (3). The functional element is thereby fixed in position in relation to the substrate (1) by means of said electrically conductive layer. The functional element is extracted from the substrate in such a way that the isolation gaps are present on all sides in relation to the substrate (1). The electrically conductive layer (S) is applied in such a way that it is connected to the functional element by means of contact fingers, fixing the functional element firmly in position.

    Abstract translation: 本发明涉及一种在单晶掺硅的衬底（1）的微结构，其具有至少一个功能元件（2.1，2.2），以及用于它们的制备方法。 根据本发明在所有侧面上从基板（1）通过隔离间隙（5，5a）的机械和电分离的功能元件（2.1，2.2），并且用导电的第一结构（4a）的至少一个位置，并且经由所述基板（1） 绝缘层（3）电绝缘层（S），并通过此，基于基材（1）上，固定在适当位置。 为了这个目的，从基板上的功能元件（2.1，2.2）（1）被移除，使得在所有侧基板（1），所述隔离间隙（5，5a）中都存在。 导电层（S），从而将功能元件（2.1，2.2），例如被施加 经由所述接触指（4a）和可靠地由该固定就位。

    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE
    65.
    发明公开
    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 审中-公开
    Anzeigevorrichtung und Verfahren zur Herstellung der Anzeigevorrichtung

    公开(公告)号：EP2538265A1

    公开(公告)日：2012-12-26

    申请号：EP12172598.0

    申请日：2012-06-19

    Applicant: Hitachi Displays, Ltd. ,  Pixtronix, Inc.

    Inventor： Kaitoh, Takuo ,  Kuriyagawa, Takeshi ,  Sakata, Ryou ,  Karikome, Osamu ,  Brosnihan, Timothy J.

    IPC: G02B26/08 ,  B81B3/00

    CPC classification number: G02B26/0841 ,  B81B7/007 ,  B81B2201/045 ,  B81C2201/0132 ,  B81C2201/016

    Abstract: The MEMS shutter (210) includes a shutter (210) having an aperture part (213, 214), a first spring connected to the shutter (210), a first anchor (232, 234, 238, 240) connected to the first spring (216, 218, 220, 222), a second spring (224, 226, 228, 230) and a second anchor (236, 242) connected to the second spring (224, 226, 228, 230), an insulation film (210c) on a surface of the shutter (210), the first spring (216, 218, 220, 222), the second spring (224, 226, 228, 230), the first anchor (232, 234, 238, 240) and the second anchor (236, 242), the surfaces being in a perpendicular direction to a surface of a substrate (102), and the insulation film (210c) is not present on a surface of the plurality of terminals (104), and a surface of the shutter (210), the first spring (216, 218, 220, 222), the second spring (224, 226, 228, 230), the first anchor (232, 234, 238, 240) and the second anchor (236, 242), the surfaces being in a parallel direction to a surface of the substrate (102) and on the opposite side of the side facing the substrate (102).

    Abstract translation: MEMS快门（210）包括具有开口部分（213,214）的快门（210），连接到活门（210）的第一弹簧，连接到第一弹簧的第一锚定件（232,234,238,240） （216,218,220,222），第二弹簧（224,226,228,230）和连接到第二弹簧（224,226,228,230）的第二锚固件（236,242），绝缘膜（ 所述第一弹簧（216,218,220,222），所述第二弹簧（224,226,228,230），所述第一锚定件（232,234,238,240） 和所述第二锚定部（236,242），所述表面与基板（102）的表面垂直，所述绝缘膜（210c）不存在于所述多个端子（104）的表面，并且 所述挡板（210）的表面，所述第一弹簧（216,218,220,222），所述第二弹簧（224,226,228,230），所述第一锚定件（232,234,238,240）和所述第二弹簧 锚固件（236,242），所述表面处于与所述基板（102）的表面平行的方向上 在面向衬底（102）的一侧的相对侧。

    Piezoresistive sensing structure
    66.
    发明公开
    Piezoresistive sensing structure 有权
    压阻传感器结构

    公开(公告)号：EP1721865A3

    公开(公告)日：2011-09-28

    申请号：EP06075963.6

    申请日：2006-04-28

    Applicant: Delphi Technologies, Inc.

    Inventor： Rich, David B. ,  Crist, Steven M.

    IPC: B81C1/00 ,  G01P15/12

    CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

    Abstract: A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).

    SCHICHTSYSTEM MIT EINER SILIZIUMSCHICHT UND EINER PASSIVIERSCHICHT, VERFAHREN ZUR ERZEUGUNG EINER PASSIVIERSCHICHT AUF EINER SILIZIUMSCHICHT UND DEREN VERWENDUNG
    68.
    发明公开
    SCHICHTSYSTEM MIT EINER SILIZIUMSCHICHT UND EINER PASSIVIERSCHICHT, VERFAHREN ZUR ERZEUGUNG EINER PASSIVIERSCHICHT AUF EINER SILIZIUMSCHICHT UND DEREN VERWENDUNG 有权
    SCHICHTSYSTEM MIT EINER SILIZIUMSCHICHT UND EINER PASSIVIERSCHICHT，VERFAHREN ZUR ERZEUGUNG EINER PASSIVIERSCHICHT AUF EINER SILIZIUMSCHICHT UND DEREN VERWENDUNG

    公开(公告)号：EP1532071A2

    公开(公告)日：2005-05-25

    申请号：EP03792106.1

    申请日：2003-05-06

    Applicant: ROBERT BOSCH GMBH

    Inventor： LAERMER, Franz ,  MUELLER, Lutz ,  BERNHARD, Winfried

    IPC: B81C1/00

    CPC classification number: H01L21/02252 ,  B81B2203/033 ,  B81C1/00571 ,  B81C2201/016 ,  H01L21/02123 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3121 ,  H01L21/31612 ,  Y10S438/958

    Abstract: The invention relates to a layer system comprising a silicon layer (11), at least some sections of whose surface are provided with a passivation layer (17), the latter (17) consisting of a first, at least predominantly inorganic sub-layer (14) and a second sub-layer (15). The latter (15) is composed of an organic compound comprising silicon or a similar material. The second sub-layer (15) in particular takes the form of a self-assembled monolayer. The invention also relates to a method for producing a passivation layer (17) on a silicon layer (11), whereby a first inorganic sub-layer (14) is produced on said layer (11) and a second sub-layer (15), containing an organic compound containing silicon or consisting of said compound, is produced on at least some sections of the first sub-layer (14), whereby the sub-layers form the passivation layer (17). The inventive layer system or the inventive method are particularly suitable for producing cantilever structures in silicon.

    Abstract translation: 本发明涉及一种包括硅层（11）的层系统，其至少一部分表面设置有钝化层（17），钝化层（17）由第一，至少主要是无机子层（ 14）和第二子层（15）。 后者（15）由包含硅或类似材料的有机化合物组成。 第二子层（15）特别采取自组装单层的形式。 本发明还涉及一种在硅层（11）上制造钝化层（17）的方法，由此在所述层（11）和第二子层（15）上产生第一无机子层（14） 在所述第一子层（14）的至少一些部分上产生包含含硅或由所述化合物组成的有机化合物，由此所述子层形成所述钝化层（17）。 本发明的层系统或本发明的方法特别适用于生产硅中的悬臂结构。

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