Abstract:
The present invention pertains to techniques for increasing the available illumination light, increasing the resolution, and optimizing the spectrum of optical inspection systems (100). These techniques involve combining the light beams (116) from two or more separate illumination sources (104, 114). In one embodiment, this performed by utilizing two separate illumination sources (104, 114 )one of the illumination sources compensates the other illumination source in the wavelength range where illumination light intensity is low. Specifically, this can be performed by utilizing a broadband illumination source (114) and a narrowband illumination source (104) combined with dichroic beamsplitters (106).
Abstract:
A system and methods for efficiently performing media writing functions is disclosed. The system and methods include: detecting media movement with respect to a base and heads during reading and writing, and moving the heads in response; using an interferometer, such as a dual beam differential interferometer, to dynamically monitor disk position and address perceived errors; and minimizing repeatable and non repeatable runout error by writing data, such as servo bursts, in multiple revolutions to average adverse runout conditions. The present system has the ability to use an interferometer to enhance media certification and perform on line, in situ monitoring of the media, and includes shrouding, head mounting, disk biasing, and related mechanical aspects beneficial to media writing.
Abstract:
Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 W per square. In a specific embodiment, the PSF provides selective filtering in two directions. In other words, the PSF provides two dimensional filtering.
Abstract:
Techniques for utilizing a microscope inspection system capable of inspecting specimens at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.
Abstract:
A system (110) and method for performing a combined media certification and servo data writing function is disclosed. The system and method include mounting a plurality of media, such as hard disks (121), to a spindle (120) and using at least one positioner (117) to move multiple read write heads (113) over disk surfaces according to multiple specific aspects of the invention. One aspect of the invention comprises performing certification on a first pass, writing servo pattern data on a second pass, and verifying servo data on a third pass over the media. The system may require high performance read/write heads, writing of coherent patterns in addition to servo patterns, use of multiple positioners, and additional hardware to perform the joint certification and servowriting function.
Abstract:
Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structure (10) configured to form a focus patterns (12) that contain focus information relating to the focus quality. The focus masking structure (10) generally includes a plurality of source lines (30, 32) that are separated by alternating phase shift zones (34, 36). Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or photolithographic system that generally includes: providing a focus masking structure (10), forming a focus pattern (12) on a work piece (18) with the focus masking structure (10), and obtaining focus information from the focus pattern.
Abstract:
An improved voltage contrast test structure (100, 200, 250, 300) is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures (102, 104, 202, 204, 252, 254, 302, 304) which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials present during the voltage contrast inspection, this indicates that a defect is present within the test structure. To produce different voltage potentials, a first set of substructures (102, 202, 252, 302) are coupled to a relatively large conductive structure (110, 210, 260, 302, 308), such as a large conductive pad, so that the first set of substructures charges more slowly than a second set of substructures that are not coupled to the relatively large conductive structure. Mechanisms for fabricating such a test structure are also disclosed. Additionally, searching mechanisms for quickly locating defects within such a test structure, as well as other types of voltage contrast structures, during a voltage contrast inspection are also provided.
Abstract:
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the stages. This forces the photodetector to operate in a non-linear manner. However, measurement inaccuracies are avoided by calibrating the photodetector output to remove any non-linear effects that may be created by intentionally saturating the at least one of the stages. In one example, a table of values may be generated during a calibration phase to convert the photodetector output into an actual amount of scattered light.
Abstract:
A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.
Abstract:
A method and tool for conducting charged-particle beam direct write lithography is disclosed. A disclosed method involves condensing an initial design file down to a set of profiles and a pattern of relative locations to form a formatted pattern file. The formatted pattern file is adjusted to accommodate desired pattern corrections. Portions of the formatted pattern records are extracted to form data strips that have a plurality of channels with a pattern of profiles and spatial indicators. Data strips are sequentially read to construct a printable pattern of profiles and spatial indicators that specify the locations of the profiles. Additionally, the pattern of profiles are sequentially printed from each data strip onto a substrate to form the desired pattern on the substrate.