公开(公告)号：KR100528326B1

公开(公告)日：2005-11-15

申请号：KR1020020087940

申请日：2002-12-31

Applicant: 삼성전자주식회사

Inventor： 김도영 ,  박완준 ,  박영수 ,  이준기 ,  민요셉 ,  권장연 ,  서순애 ,  최영민 ,  채수두

IPC: H01L29/786

CPC classification number: H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: 가요성 기판 상에 구현되는 박막 반도체 소자 및 이를 이용한 전자장치 및 그 제조방법이 개시된다. 개시된 반도체 소자는 가요성 기판 상에 형성되는 박막 반도체 칩과, 박막 반도체 칩을 감싸는 보호캡 및 상기 기판 및 상기 보호캡 상에 형성된 절연층을 구비한다. 개시된 전자장치는, 가요성 기판과 가요성 기판 상에 형성되는 반도체 칩을 포함하는 전자장치에 있어서, 상기 반도체 칩을 감싸는 보호캡을 구비한다. 반도체 칩을 감싸는 보호캡에 의해 기판의 벤딩시 발생하는 응력에 대한 내구성이 향상된다.

公开(公告)号：KR100474847B1

公开(公告)日：2005-03-08

申请号：KR1020020023297

申请日：2002-04-29

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  김대식 ,  민요셉 ,  조영진

IPC: H01L21/20

Abstract: 다성분계 박막 및 그 형성 방법에 관해 개시되어 있다. 개시된 본 발명은 반응 챔버에 기판을 로딩한 다음, 상기 기판 상에 형성하고자 하는 박막을 구성하는 단위 물질층을 형성하되, 상기 단위 물질층은 적어도 상기 박막을 구성하는 물질 성분을 포함하는 두 종류의 전구체들로 구성된 모자이크 원자층(MAL)으로 형성하는 제1 단계와, 상기 반응 챔버 내부를 퍼지하는 제2 단계 및 상기 모자이크 원자층을 화학 변화시키는 제3 단계를 통해 형성하는 것을 특징으로 하는 박막 형성 방법 및 이 방법을 통해 형성된 박막을 제공한다.

公开(公告)号：KR100468847B1

公开(公告)日：2005-01-29

申请号：KR1020020018026

申请日：2002-04-02

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  조영진 ,  이정현

IPC: C23C16/448

CPC classification number: C23C16/40 ,  C23C16/45553

Abstract: Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with beta-diketone ligands is used as a precursor. Further, a thin film with low leakage current can be obtained as the metal oxide thin film fabrication method using a chemical vapor deposition or atomic layer deposition method grows a thin film with fine microstructure.

Abstract translation: 提供一种制造金属氧化物薄膜的方法，其中通过第一反应物和第二反应物之间的化学反应产生的金属氧化物作为薄膜沉积在基底的表面上。 该方法包括将含有金属有机化合物的第一反应物引入包括基材的反应室中; 并引入含醇的第二反应物。 在沉积过程中，基板或沉积表面的直接氧化被反应气体抑制，因为其使用不包含自由基氧的醇蒸气作为用于沉积薄膜的反应气体。 而且，由于醇蒸气与前驱体之间的化学反应导致的热分解而使薄膜沉积，所以沉积速度快。 特别是，当使用具有β-二酮配体的金属 - 有机配合物作为前体时，沉积速率也很快。 此外，由于使用化学气相沉积或原子层沉积法的金属氧化物薄膜制造方法生长具有精细微结构的薄膜，因此可以获得具有低漏电流的薄膜。

公开(公告)号：KR1020040107874A

公开(公告)日：2004-12-23

申请号：KR1020030038521

申请日：2003-06-14

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  배은주 ,  최원봉 ,  정병호

IPC: H01L29/772 ,  B82Y10/00

CPC classification number: H01L51/057 ,  B82Y10/00 ,  G11C2213/18 ,  H01L51/0048

Abstract: PURPOSE: A vertical CNT(Carbon NanoTube) FET(Field Effect Transistor) and a manufacturing method thereof are provided to maximize field effect of a gate and to improve on/off current by surrounding completely a carbon nano-tube channel having a depletion layer using the gate. CONSTITUTION: A first electrode(13) is formed on a substrate(10). A CNT is vertically formed on the first electrode. A second electrode(12) is formed on the CNT. A first burial layer(31) is formed on the first electrode, A second burial layer(32) is formed under the second electrode. The first and second burial layers are spaced apart from each other. A channel portion(11) of the CNT is exposed to the outside through a space between the first and second burial layers. The channel portion includes a depletion layer. The channel portion is surrounded with a gate(20) between the first and second burial layers via a gate insulating layer(21).

Abstract translation: 目的：提供垂直CNT（Carbon NanoTube）FET（场效应晶体管）及其制造方法，以使栅极的场效应最大化，并通过使用完全覆盖具有耗尽层的碳纳米管通道来改善导通/截止电流 大门。 构成：在基板（10）上形成第一电极（13）。 在第一电极上垂直形成CNT。 在CNT上形成第二电极（12）。 第一埋置层（31）形成在第一电极上，第二埋置层（32）形成在第二电极下方。 第一和第二埋置层彼此间隔开。 CNT的通道部分（11）通过第一和第二埋地层之间的空间暴露于外部。 通道部分包括耗尽层。 通道部分经由栅极绝缘层（21）被第一和第二埋置层之间的栅极（20）包围。

公开(公告)号：KR1020040094179A

公开(公告)日：2004-11-09

申请号：KR1020030028173

申请日：2003-05-02

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  배은주 ,  최원봉 ,  정병호

IPC: H01L21/335 ,  B82Y40/00

Abstract: PURPOSE: A carbon nano tube FET(field effect transistor) is provided to maximize an electric field effect of a gate by using a cylindrical carbon nano tube as a channel and by making a channel region completely surrounded by the gate. CONSTITUTION: A substrate(10) is prepared. A carbon nano tube(CNT) is disposed in parallel with the plane of the substrate. A channel(11) is formed by one of a bundle of the carbon nano tubes. A source and a drain are electrically connected to both ends of the channel. A gate(20) is formed in such a way that the channel is surrounded by the gate. A gate insulation layer(21) is interposed between the gate and the channel.

Abstract translation: 目的：提供一种碳纳米管FET（场效应晶体管），通过使用圆柱形碳纳米管作为通道并使通道区域完全被栅极包围，使栅极的电场效应最大化。 构成：制备基材（10）。 碳纳米管（CNT）与衬底的平面平行设置。 通道（11）由一束碳纳米管形成。 源极和漏极电连接到通道的两端。 栅极（20）形成为使得沟道被栅极包围。 栅极绝缘层（21）插入在栅极和沟道之间。

公开(公告)号：KR100455287B1

公开(公告)日：2004-11-06

申请号：KR1020020010982

申请日：2002-02-28

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  민요셉 ,  조영진

IPC: H01L27/04

CPC classification number: H01L28/56 ,  H01L21/3141 ,  H01L21/321 ,  H01L27/0629 ,  H01L28/55 ,  H01L28/65

Abstract: A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor are provided. The capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13.

Abstract translation: 提供了用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件。 电容器包括上部电极和下部电极，每个电极由铂族金属形成; 设置在上电极和下电极之间的薄电介质层; 以及设置在所述下电极和所述薄介电层之间的缓冲层，所述缓冲层包括第3,4或13族的金属氧化物。

公开(公告)号：KR1020040080291A

公开(公告)日：2004-09-18

申请号：KR1020030015197

申请日：2003-03-11

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  서범석 ,  민요셉 ,  조영진

IPC: H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645

Abstract: PURPOSE: A method for forming an oxide film having high dielectric constant, a capacitor comprising dielectric film formed by the method and a method for manufacturing the same are provided to reduce the number of ALD apparatuses by using chemical reaction between precursors of aluminum and hafnium. CONSTITUTION: A semiconductor substrate(40) is loaded into an ALD apparatus. A reactant is deposited on an upper surface of the semiconductor substrate. The reactant includes the first reacting element and the second reacting element. The first high dielectric oxide layer(50a) including the first and the second reacting elements is formed on the upper surface of the semiconductor substrate by oxidizing the first and the second reacting elements.

Abstract translation: 目的：提供一种形成具有高介电常数的氧化膜的方法，包括通过该方法形成的电介质膜的电容器及其制造方法，用于通过使用铝和铪的前体之间的化学反应来减少ALD装置的数量。 构成：将半导体衬底（40）装载到ALD装置中。 反应物沉积在半导体衬底的上表面上。 反应物包括第一反应元件和第二反应元件。 通过氧化第一和第二反应元件，在半导体衬底的上表面上形成包括第一和第二反应元件的第一高电介质氧化物层（50a）。

公开(公告)号：KR1020040061656A

公开(公告)日：2004-07-07

申请号：KR1020020087940

申请日：2002-12-31

Applicant: 삼성전자주식회사

Inventor： 김도영 ,  박완준 ,  박영수 ,  이준기 ,  민요셉 ,  권장연 ,  서순애 ,  최영민 ,  채수두

IPC: H01L29/786

CPC classification number: H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: PURPOSE: A method for fabricating an electronic device is provided to improve tolerance with respect to the stress occurring in bending a flexible substrate by forming a protection cap for capping a thin film semiconductor device installed in the flexible substrate. CONSTITUTION: A thin film semiconductor chip is fabricated on the flexible substrate(51). The protection cap(63) is formed to cover a semiconductor chip. An insulation layer is stacked on the substrate to cover the protection cap. A contact hole is formed from the insulation layer and the protection cap to the upper surface of the semiconductor chip. An electrode electrically contacts the semiconductor chip through the contact hole. A driven unit driven by the semiconductor chip is formed on the electrode.

Abstract translation: 目的：提供一种用于制造电子设备的方法，以通过形成用于封装安装在柔性基板中的薄膜半导体器件的保护帽来改善在弯曲柔性基板时发生的应力的公差。 构成：在柔性基板（51）上制造薄膜半导体芯片。 保护帽（63）形成为覆盖半导体芯片。 绝缘层堆叠在基板上以覆盖保护盖。 从绝缘层和保护盖形成到半导体芯片的上表面的接触孔。 电极通过接触孔与半导体芯片电接触。 在电极上形成由半导体芯片驱动的从动单元。

公开(公告)号：KR1020030048844A

公开(公告)日：2003-06-25

申请号：KR1020010078887

申请日：2001-12-13

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  마동준 ,  민요셉 ,  윤혜영 ,  조영진

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: PURPOSE: A showerhead for chemical vapor reactor in which a source is uniformly emitted from an outlet of the showerhead is provided. CONSTITUTION: The showerhead(100) for chemical vapor reactor is characterized in that first, second and third circular plates(110,120,150) are sequentially laid up and formed in such a way that the side surface of the first, second and third circular plates is sealed, at least two of 'n' source injection holes(114) arranged on a concentric circle separated from the central axis in a certain distance with the 'n' source injection holes being spaced apart from each other in an equal gap, and a reaction gas injection hole(112) penetrating the first circular plate are formed on the first circular plate, a reaction gas passing hole(122) corresponding to the reaction gas injection hole, and 'n' sectors uniformly split centering around the source injection holes are formed on the second circular plate, first groove(126) formed with respectively spaced apart from the central axis and outer circumference in a certain distance at a line extended to the source injection holes from the central axis, a plurality of second grooves(128) formed with extended from the first groove to a position that is spaced apart from a boundary line of the sectors in a certain distance, and a plurality of source dispersion holes(130) at the lower part of the second grooves are formed in the sectors, and a source passing hole(152) formed correspondingly to the source dispersion holes so that a source passing the source dispersion holes passes through the third circular plate, third groove(154) separated from the source passing hole in a certain distance and opened to the reaction gas injection hole so that the third groove becomes a diffusion path of the reaction gas, and a plurality of reaction gas injection holes at the lower part of the third groove are formed on the third circular plate.

Abstract translation: 目的：提供一种化学气相反应器的喷头，其中源头从喷头的出口均匀地排出。 构成：用于化学气相反应器的喷头（100）的特征在于，第一，第二和第三圆形板（110,120,150）依次铺设并形成，使得第一，第二和第三圆形板的侧表面被密封 ，排列在与中心轴线隔开一定距离的同心圆上的'n'个源极注入孔中的至少两个，'n'个源极注入孔彼此间隔开间隔开，并且反应 在第一圆板上形成贯通第一圆板的气体注入孔（112），形成与反应气体注入孔对应的反应气体通过孔（122），以及以源喷射孔为中心的均匀分布的“n”个扇区 在所述第二圆板上，所述第一凹槽（126）形成为与所述中心轴线和所述外圆周分开间隔开一定距离，在从所述中心轴线延伸到所述源喷射孔的线 s，多个第二槽（128），其形成为从所述第一槽延伸到与所述扇区的边界线间隔一定距离的位置，以及在所述下部的多个源分散孔（130） 的第二凹槽形成在扇形部分中，源通孔（152）对应于源分散孔形成，使得通过源分散孔的源穿过第三圆形板，与源极分离的第三凹槽（154） 通孔一定距离，向反应气体注入孔开口，使第三槽成为反应气体的扩散路径，第三槽的下部形成有多个反应气体喷射孔，第三圆形 盘子。