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公开(公告)号：KR1019950020834A
公开(公告)日：1995-07-24
申请号：KR1019930029625
申请日：1993-12-24
Applicant: 한국전자통신연구원
IPC: H01H59/00
Abstract: 본 발명은 10V이하의 저전압에서 작동이 가능하고, 응답속도가 100㎲ec이하인 고속 캔티레버(Cantilever)형 정전력 구동 마이크로 릴레이 구조 및 제작방법에 관한 것으로 마이크로 머시닝 기술을 이용하여 저전압(10V이항), 고속 응답성(100㎲ec)특성을 갖도록 하기 위하여 마이크로 릴레이구조는 SiO
2 절연체상에 전극금속박막이 형성된 캔티레버(Cantilever)형태이고 10V이하의 저전압으로 구동하기 위하여 전극간 거리를 2㎛정도를 하고, 실장시 사용되는 상부 덮개판을 캔티레버(Cantilever)를 하부방향으로 변형하여 구동발생력을 극대화할 수 있도록 하여 릴레이의 접점의 저저항 유지 및 작동수평 증가를 위해서 상부 덮개판에 액체금속인 수은을 사용함을 특징으로 한다.-
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Patent Agency Ranking
公开(公告)号：KR1019950002181B1
公开(公告)日：1995-03-14
申请号：KR1019910007293
申请日：1991-05-06
Applicant: 한국전자통신연구원
IPC: H01L21/26
Abstract: The method includes the steps of depositing a thin fluoride film (2) on a semiconductor substrate (1), irradiating electron beams to the gate or metal wiring formation region on the fluoride film (2), forming a thin metal film (3) for gate or wirings on the electron beam irradiated region, and depositing a passivation film (4) of fluoride, SiO2, Si3N4 or Al2O3 thereon, thereby metallic materials being obtained from the fluoride film to simplify the photolithographic process. The residual fluoride materials act as an insulator for preventing the electric leakage between the metallic circuits.
Abstract translation: 该方法包括以下步骤：在半导体衬底（1）上沉积氟化薄膜（2），向氟化膜（2）上的栅极或金属布线形成区域照射电子束，形成薄金属膜（3） 电子束照射区域的栅极或配线，以及在其上沉积氟化物，SiO 2，Si 3 N 4或Al 2 O 3的钝化膜（4），由此从氟化物膜获得金属材料以简化光刻工艺。 剩余的氟化物材料用作防止金属电路之间漏电的绝缘体。
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公开(公告)号：KR1019940007072B1
公开(公告)日：1994-08-04
申请号：KR1019910010394
申请日：1991-06-22
Applicant: 한국전자통신연구원
IPC: H01L21/3205
Abstract: The method includes the steps of forming a fluoride thin film 9 on a substrate 1 on which a first and second interconnection line 2 and 3 are formed, selectively irradiating electron beam into a portion of the fluoride thin film, in which vertical connection is required, to form a metal thin film 10 in a super vacuum ambient, wherein the metal thin film 10 is used as the vertical connection portion which connects first and second interconnection layer to each other, the portion of the fluoride thin film 9, in which electron beam is not irradiated, is used as an insulating layer which insulates first and second interconnection layer from each other.
Abstract translation: 该方法包括在其上形成有第一和第二互连线2和3的基板1上形成氟化物薄膜9的步骤，选择性地将电子束照射到需要垂直连接的氟化物薄膜的一部分中， 在超真空环境中形成金属薄膜10，其中金属薄膜10用作将第一和第二互连层彼此连接的垂直连接部分，即氟化物薄膜9的部分，其中电子束 不被照射，被用作使第一和第二互连层彼此绝缘的绝缘层。
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公开(公告)号：KR1019930001393A
公开(公告)日：1993-01-16
申请号：KR1019910010394
申请日：1991-06-22
Applicant: 한국전자통신연구원
IPC: H01L21/3205
Abstract: 내용 없음
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