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公开(公告)号：KR100903109B1
公开(公告)日：2009-06-16
申请号：KR1020070028883
申请日：2007-03-23
Applicant: 한국전자통신연구원 , 광운대학교 산학협력단 , 한양대학교 산학협력단 , 연세대학교 산학협력단
Abstract: 오디오 신호의 무손실 부호화/복호화 장치 및 그 방법이 개시된다. 현 프레임의 주파수 계수에 대한 양자화 인덱스들로부터 각 레벨에 대한 제1 비트열을 생성하고, 각 레벨에 대한 제1 비트열을 일렬로 나열한 제2 비트열의 런 길이로 구성되는 심볼을 생성한 후, 심볼을 제3 비트열로 부호화한다. 이로써, 오디오 신호의 부호화 성능을 향상시킬 수 있다.
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公开(公告)号：KR1020080092770A
公开(公告)日：2008-10-16
申请号：KR1020070036585
申请日：2007-04-13
Applicant: 한국전자통신연구원 , 한양대학교 산학협력단 , 광운대학교 산학협력단 , 연세대학교 산학협력단
Abstract: A quantizer and method of an LSF coefficient in a wide-band speech coder using trellis coded quantization algorithm are provided to improve an SD performance and assigned bits by reducing an error transfer as a result of using in parallel both a predictional structure and a non-predictional structure. A quantizer of an LSF coefficient in a wide-band speech coder includes a predictional structure quantizing portion(200), a non-predictional structure quantizing portion(210), and a switching portion(220). The predictional structure quantizing portion calculates a quantized candidate vector by quantizing an LSF coefficient vector, and a predictional quantization final vector of the LSF coefficient vector by trellis coded quantizing the candidate vector with reference to a predicted LSF vector of the LSF coefficient vector. The non-predictional structure quantizing portion calculates a quantized candidate vector by quantizing the LSF coefficient vector, and a non-predictional quantization final vector of the LSF coefficient vector by trellis coded quantizing the candidate vector. The switching portion selects smaller one of differences between the LSF coefficient vector and the predictional and non-predictional quantization final vectors as the final quantization vector of the LSF coefficient vector.
Abstract translation: 提供了使用网格编码量化算法的宽带语音编码器中的LSF系数的量化器和方法，以通过减少作为预测结构和非均匀结构的并行结果的误差传递来改善SD性能和分配比特， 预测结构。 宽带语音编码器中的LSF系数的量化器包括预测结构量化部分（200），非预测结构量化部分（210）和切换部分（220）。 预测结构量化部分通过对参考LSF系数向量的预测LSF向量的量化该候选向量的网格编码来量化LSF系数向量和LSF系数向量的预测量化最终向量来计算量化候选向量。 非预测结构量化部分通过量化该LSF系数向量来计算量化的候选向量，以及通过网格编码量化该候选向量的LSF系数向量的非预测量化最终向量。 切换部分选择LSF系数向量与预测和非预测量化最终向量之间的较小差异作为LSF系数向量的最终量化向量。
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公开(公告)号：KR1020080055578A
公开(公告)日：2008-06-19
申请号：KR1020070028883
申请日：2007-03-23
Applicant: 한국전자통신연구원 , 광운대학교 산학협력단 , 한양대학교 산학협력단 , 연세대학교 산학협력단
CPC classification number: G10L19/0017 , G10L19/002
Abstract: A lossless encoding/decoding apparatus and a method thereof are provided to execute compression on audio signals through bitstreams having small numbers by enhancing the capability of lossless encoding of frequency coefficients. A lossless encoding apparatus includes a bit converter(422), a run length converter(424), and a run length encoder(430). The bit converter generates first bitstreams on respective levels from quantization indexes on frequency coefficients of a current frame. The run length converter generates symbols which are formed by a run length of second bitstreams where the first bit streams are disposed in one row. The run length encoder encodes the symbols to third bitstreams.
Abstract translation: 提供了一种无损编码/解码装置及其方法，通过提高频率系数的无损编码能力，通过具有小数的比特流对音频信号执行压缩。 无损编码装置包括位转换器（422），行程长度转换器（424）和行程编码器（430）。 比特转换器从当前帧的频率系数上的量化索引在相应电平上产生第一比特流。 游程长度转换器产生由第一比特流的行长度形成的符号，其中第一比特流被布置在一行中。 游程长度编码器将符号编码到第三比特流。
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Patent Agency Ranking
公开(公告)号：KR1019950021180A
公开(公告)日：1995-07-26
申请号：KR1019930027344
申请日：1993-12-11
Applicant: 한국전자통신연구원
IPC: G02B27/10
Abstract: 본 발명은 기판의 이방성 식각과 기판접합기술을 이용하여 광을 여러방향으로 분할시킬 수 있도록 하는 이방성 식각과 기판접합에 의한 광분할기 및 제작방법에 관한 것으로 서로 다른 방향을 갖는 〈100〉기판과〈410〉기판을 접합하여 한 기판을 식각한 다음 상기 식각영역을 틀로하여 광반사층을 형성한 뒤 다결정 규소 등의 물질을 채워 평탄화한 다음 상기 기판을 제거하므로서 광반사면을 갖도록하여 광신호 처리에서 들어오는 광신호를 피라미드형 광분할기의 상기 광반사면에 의하여 반사방향을 변화시켜 광신호를 분할하도록 하는 것이다.
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公开(公告)号：KR1019940007656B1
公开(公告)日：1994-08-22
申请号：KR1019910024508
申请日：1991-12-26
IPC: H01L29/73
Abstract: The method is for manufacturing a heterojunction and homojunction dipole transistor using a substrate connection method. The method includes the steps of: (A) forming silicon layers (31,32) on a P-type substrate (30); (B) etching the silicon layer to form device region and forming an insulating layer (33); (C) spraying polycrystal silicon (3) and connecting to another P-type silicon substrate (35); (D) polishing the silicon layer (31) until an insulating layer (33) is exposed; (E) forming connecting area (36) on a silicon layer (32) and forming an insulating layer (37), a polycrystal silicon layer (38), and a silicon layer (39); (F) etching to form an active region and forming a groove on side wall of an insulating layer (37); and (G) spraying polycrystal silicon and heating to form an oxide layer.
Abstract translation: 该方法是使用基板连接方法制造异质结和同质结偶极晶体管。 该方法包括以下步骤：（A）在P型衬底（30）上形成硅层（31,32）; （B）蚀刻硅层以形成器件区域并形成绝缘层（33）; （C）喷射多晶硅（3）并连接到另一个P型硅衬底（35）; （D）研磨硅层（31）直到暴露绝缘层（33）; （E）在硅层（32）上形成连接区域（36）并形成绝缘层（37），多晶硅层（38）和硅层（39）; （F）蚀刻以形成有源区并在绝缘层（37）的侧壁上形成凹槽; 和（G）喷涂多晶硅并加热形成氧化物层。
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公开(公告)号：KR1019940002403B1
公开(公告)日：1994-03-24
申请号：KR1019910008805
申请日：1991-05-29
Applicant: 한국전자통신연구원
IPC: H01L21/335
Abstract: The production method employing the general LOCOS method to build up the activated region (24) and the field oxide film (23) comprises: (A) forming the polycrystalline silicon pattern (25) on the upper side of the activated region; (B) forming a gate silicon oxide film (26) by thermal oxidation of a part of the silicon pattern, and polycrystalline silicon patterns (25a),(25b) ion implanted with phosphorus and arsenic; (C) forming an N negative polycrystalline silicon source (28) and a drain (29) rare-doped with phosphorus at the both sides of channel region (30), and also an arsenic-rich-doped N positive polycrystalline silicon source (31) and a drain (32), with heat treating for making the gate silicon oxide film (27).
Abstract translation: 使用通常的LOCOS方法来生成活化区域（24）和场氧化膜（23）的制造方法包括：（A）在活化区域的上侧形成多晶硅图案（25） （B）通过硅图案的一部分的热氧化形成栅氧化硅膜（26），以及注入磷和砷的多晶硅图案（25a），（25b）离子; （C）在沟道区（30）的两侧形成N极多晶硅源（28）和稀土掺杂磷的漏极（29），以及富含砷的N正多晶硅源（31） ）和用于制造栅极氧化硅膜（27）的热处理的漏极（32）。
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公开(公告)号：KR1019940000494B1
公开(公告)日：1994-01-21
申请号：KR1019900021818
申请日：1990-12-26
Applicant: 한국전자통신연구원
IPC: H01L21/00
Abstract: The method is characterized by consisting of the following steps: (a) depositing a silicon nitride layer (11) on a supporting silicon substrate (12) to a fixed thickness and forming a region (13) for selective oxidation by etching the silicon nitride layer with photolithography and nitride layer etching, (b) forming a silicon oxide layer (13) by the selective oxidation of the region for a gas channel, removing the nitride layer and the selective oxide layer sequentially by using the selective oxide mask, and finally forming the gas channel (14). In this method, both selective oxidation and dry etching can be applied to make the gas channel.
Abstract translation: 该方法的特征在于包括以下步骤：（a）将氮化硅层（11）沉积在支撑硅衬底（12）上至固定厚度，并通过蚀刻氮化硅层形成用于选择性氧化的区域（13） 通过光刻和氮化物层蚀刻，（b）通过气体通道区域的选择性氧化形成氧化硅层（13），通过使用选择性氧化物掩模依次去除氮化物层和选择性氧化物层，最后形成 气体通道（14）。 在这种方法中，可以应用选择性氧化和干蚀刻来制造气体通道。
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