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公开(公告)号：KR101164407B1
公开(公告)日：2012-07-09
申请号：KR1020090025678
申请日：2009-03-26
Applicant: 한국전자통신연구원
CPC classification number: Y02D70/42
Abstract: 본 발명은 RF 소자를 제공한다. 이 소자는 나도 튜브 고유 진동수(f0)를 가지고 진동하는 탄소나노튜브, 탄소나노튜브의 일단에 고정 결합된 음극, 탄소나노튜브의 타단에 대향하여 배치되고 가변의 공진 주파수로 진동하는 튜닝 전극, 및 튜닝 전극의 일단에 전기적으로 연결된 양극를 포함하되, 튜닝 전극의 타단은 상기 탄소 나노튜브의 타단과 인접하여 배치되고, 탄소나노튜브는 케리어 주파수를 가지는 외부 전자기파에 따라 케리어 주파수로 진동하고, 가변 공진 주파수 특성을 갖는 튜닝 전극은 상기 탄소나노튜브의 타단과 튜닝 전극의 타단의 거리 변화를 증폭시켜 전계 방출에 따른 전자 방출 감도를 증가시킬 수 있다.
탄소나노튜브(Carbon nanotube(CNT)), 라디오 주파수 소자(radio frequency(RF) device), 안테나(antenna), 복조(demodulation), 증폭기(amplifier)Abstract translation: 目的：提供射频装置，以形成基于使用CNT的电子和结构性质的纳米材料的微型和低功率结构。 构成：碳纳米管（110）根据纳米管固有频率产生振动。 阴极（120）固定在碳纳米管的一端。 调谐电极（130）设置在碳纳米管的另一端。 阳极（140）电连接到调谐电极的一端。 调谐电极的另一端与碳纳米管的另一端相连。 碳纳米管根据具有载波频率的外部电磁波振动到载波频率。 调谐电极通过放大碳纳米管和调谐电极的另一端的另一端的距离变化来增加电子发射灵敏度。
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公开(公告)号：KR1020100063606A
公开(公告)日：2010-06-11
申请号：KR1020090025678
申请日：2009-03-26
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A radio frequency device is provided to form a micro type and a low power structure based on a nano material using an electronic and structural property of a CNT. CONSTITUTION: A carbon nano-tube(110) generates a vibration according to a nano-tube natural frequency. A cathode(120) is fixed to one end of the carbon nano-tube. A tuning electrode(130) is arranged on the other end of the carbon nano-tube. An anode(140) is electrically connected to the one end of the tuning electrode. The other end of the tuning electrode is arranged with the other end of the carbon nano-tube with contiguous. The carbon nano-tube vibrates to the carrier frequency according to an external electromagnetic wave having a carrier frequency. The tuning electrode increases an electronic emission sensitivity by amplifying a distance variation of the other end of the other end of the carbon nano-tube and the tuning electrode.
Abstract translation: 目的：提供射频装置，以形成基于使用CNT的电子和结构性质的纳米材料的微型和低功率结构。 构成：碳纳米管（110）根据纳米管固有频率产生振动。 阴极（120）固定在碳纳米管的一端。 调谐电极（130）设置在碳纳米管的另一端。 阳极（140）电连接到调谐电极的一端。 调谐电极的另一端与碳纳米管的另一端相连。 碳纳米管根据具有载波频率的外部电磁波振动到载波频率。 调谐电极通过放大碳纳米管和调谐电极的另一端的另一端的距离变化来增加电子发射灵敏度。
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公开(公告)号：KR100932898B1
公开(公告)日：2009-12-21
申请号：KR1020070077171
申请日：2007-07-31
Applicant: 한국전자통신연구원 , 고려대학교 산학협력단
IPC: B82B3/00 , H01L21/027
Abstract: A formation method of ZnO nanowire network pattern is provided to form ZnO nanowire network pattern and device of a desired shape and size at a low temperature with a stable yield by using a lithographic process and a sol-gel method. A formation method of ZnO nanowire network pattern comprises steps of: forming a photoresist pattern exposing a part of a substrate on the substrate; molding the ZnO nanowire network on a photoresist pattern and an exposed part of the substrate by a sol-gel method; and removing the photoresist pattern and forming the ZnO nanowire network pattern on the substrate. The step for forming the photoresist pattern comprises steps of: coating a photoresist on the substrate; exposing the photoresist; and developing the exposed photoresist.
Abstract translation: 提供一种ZnO纳米线网络图案的形成方法，以通过使用光刻工艺和溶胶 - 凝胶方法在低温下以稳定的产率形成期望形状和尺寸的ZnO纳米线网络图案和器件。 一种ZnO纳米线网络图案的形成方法，包括以下步骤：在基板上形成暴露部分基板的光刻胶图案; 通过溶胶 - 凝胶方法将ZnO纳米线网络模制在光刻胶图案和衬底的暴露部分上; 并去除光致抗蚀剂图案并在衬底上形成ZnO纳米线网状图案。 形成光刻胶图案的步骤包括以下步骤：在衬底上涂覆光刻胶; 暴露光致抗蚀剂; 并显影曝光的光刻胶。
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公开(公告)号：KR1020090051597A
公开(公告)日：2009-05-22
申请号：KR1020070118065
申请日：2007-11-19
Applicant: 한국전자통신연구원
IPC: H01L31/04 , H01L31/0224
CPC classification number: H01G9/2031 , H01G9/2059 , H01G9/2086 , Y02E10/542 , Y02P70/521
Abstract: 유연성 있는 전극을 사용하는 염료감응 태양전지를 개시한다. 본 발명에 따른 염료감응 태양전지는 서로 대향하고 있는 제1 전극, 제2 전극 및 상기 제1 전극과 상기 제2 전극 사이에 개재되어 있는 전해질층을 포함하되, 상기 제1 전극은 전도성 섬유의 구조물, 상기 전도성 섬유의 구조물의 표면에 형성되어 있는 나노입자 반도체 산화물층 및 상기 나노입자 반도체 산화물층에 흡착되어 있는 염료분자를 포함한다.
염료감응 태양전지, 전도성 섬유, 나노입자 반도체 산화물, 염료분자-
公开(公告)号：KR1020090038631A
公开(公告)日：2009-04-21
申请号：KR1020070104023
申请日：2007-10-16
Applicant: 한국전자통신연구원
IPC: H01L31/04 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/18 , H01G9/2031 , H01G9/2059 , H01G9/209 , Y02E10/542 , Y02P70/521
Abstract: A dye-sensitized solar cell and a manufacturing method thereof are provided to maximize photoelectric energy conversion efficiency by minimizing a moving path of an electron in an electrode structure. An electrode structure of a dye-sensitized solar cell includes a conductor layer(120), an oxide semiconductor layer(122), and a dye layer(124). The conductor layer includes regularly arranged holes. The oxide semiconductor layer is formed on a surface of the conductor layer by using one method selected among a deep coating method, an electrophoretic method, and an electroplating method. The oxide semiconductor layer includes a titanium oxide. The dye layer is formed on a surface of the oxide semiconductor layer.
Abstract translation: 提供染料敏化太阳能电池及其制造方法，以通过使电极结构中的电子的移动路径最小化来最大化光电转换效率。 染料敏化太阳能电池的电极结构包括导体层（120），氧化物半导体层（122）和染料层（124）。 导体层包括规则排列的孔。 通过采用深涂法，电泳法，电镀法等一种方法，在导体层的表面形成氧化物半导体层。 氧化物半导体层包括氧化钛。 染料层形成在氧化物半导体层的表面上。
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Patent Agency Ranking
公开(公告)号：KR1020090019485A
公开(公告)日：2009-02-25
申请号：KR1020070083952
申请日：2007-08-21
Applicant: 한국전자통신연구원
CPC classification number: H01G9/2031 , H01G9/2036 , H01G9/2059 , H01L51/0086 , Y02E10/542 , Y02P70/521
Abstract: A die-sensitized solar cells and method for manufacturing the same is provided to prevent electronic loss by interaction with the electronics from dyes and oxidation/deoxidation electrolyte on the surface of the surface of the metal oxide layer or the conductive substrate. In a die-sensitized solar cells and method for manufacturing the same, the dye-sensitized solar cell comprises a semiconductor electrode(10), an opposing electrode, and electrolyte solution. The semiconductor electrode includes a first conductive substrate and an electron transport layer(13) on the first conductive substrate. The electron transport layer comprises the dye molecule layer(16) absorbed to the surface of the metal oxide layer and the metal oxide layer(14) formed on the first conductive substrate. The insulating protection layer(18) is formed on a part of surface on the metal oxide layer not covering with the dye molecule layer or a part of the surface of the conductive substrate not contacting with the metal oxide layer.
Abstract translation: 提供了一种模具增感太阳能电池及其制造方法，以通过与金属氧化物层或导电性基体的表面的染料和氧化/脱氧电解质的电子元件的相互作用来防止电子损失。 在模具增感太阳能电池及其制造方法中，染料敏化太阳能电池包括半导体电极（10），相对电极和电解质溶液。 半导体电极在第一导电衬底上包括第一导电衬底和电子传输层（13）。 电子传输层包括被吸收到金属氧化物层的表面上的染料分子层（16）和形成在第一导电衬底上的金属氧化物层（14）。 绝缘保护层（18）形成在金属氧化物层的不被染料分子层覆盖的表面的一部分上，或导电性基材的与金属氧化物层不接触的部分表面。
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公开(公告)号：KR1020080052251A
公开(公告)日：2008-06-11
申请号：KR1020070061450
申请日：2007-06-22
Applicant: 한국전자통신연구원 , 고려대학교 산학협력단
IPC: H01L21/027 , B82Y40/00
CPC classification number: H01L21/0274 , B82Y40/00 , G03F7/70283 , G03F7/705
Abstract: A method for manufacturing an electronic device using a nanowire is provided to reduce a manufacturing cost and a manufacturing time for the electronic device by reducing a process using an E-beam. An electrode is formed on a substrate(S11). Plural nanowires are applied on the substrate on which the electrode is formed(S12). An image with respect to the substrate on which the nanowire and the electrode are formed is captured(S13). A virtual connection line connecting the nanowire to the electrode is drawn on the image by using an electrode pattern simulated through a computer program(S14). A photoresist for an E-beam is applied onto the substrate(S15). The photoresist formed on a position corresponding to the virtual connection line and the electrode pattern is removed by an E-beam lithography process(S16). A metal layer is deposited on the substrate(S17). The photoresist remaining on the substrate is removed by a lift-off process(S18).
Abstract translation: 提供一种使用纳米线制造电子装置的方法，通过减少使用电子束的处理来降低电子装置的制造成本和制造时间。 在基板上形成电极（S11）。 在形成电极的基板上施加多个纳米线（S12）。 拍摄相对于其上形成有纳米线和电极的基板的图像（S13）。 通过使用通过计算机程序模拟的电极图案，在图像上画出将纳米线连接到电极的虚拟连接线（S14）。 将用于电子束的光致抗蚀剂施加到基板上（S15）。 通过电子束光刻处理去除在与虚拟连接线和电极图案对应的位置上形成的光致抗蚀剂（S16）。 在基板上沉积金属层（S17）。 通过剥离工艺去除残留在基板上的光致抗蚀剂（S18）。
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公开(公告)号：KR1020080052250A
公开(公告)日：2008-06-11
申请号：KR1020070061440
申请日：2007-06-22
Applicant: 한국전자통신연구원 , 고려대학교 산학협력단
CPC classification number: H01L29/0669 , B82Y10/00 , H01L21/02603
Abstract: A method for fabricating a nano wire array device is provided to embody a large-scale nano wire array device even when a nano wire is not parallel with an electrode line by selectively etching a nano wore on a substrate and by patterning an electrode line in a manner that the electrode becomes vertical to the electrode line to improve a probability that the electrode is connected to the nano wire. A nano wire solution including a nano wire(50) is deposited on a substrate. A first etch region of a stripe type is formed on the substrate to pattern the nano wire. A drain electrode line(100) and a source electrode line(200) are formed at both sides of the patterned nano wire, parallel with each other. One end of a plurality of drain electrodes(110) is connected to the drain electrode line wherein the drain electrode comes in contact with at least one nano wire. One end of a plurality of source electrodes(210) is connected to the source electrode line wherein the source electrode comes in contact with the nano wire in contact with the drain electrode. A second etch region is formed between the pair of drain electrodes and source electrodes so that the pair of drain electrodes and source electrodes don't contact each other electrically. An insulation layer(800) is formed on the substrate. A gate electrode(300) is formed on the insulation layer, disposed between the source and drain electrodes in contact with the nano wire.
Abstract translation: 提供一种制造纳米线阵列器件的方法，即使当纳米线不与电极线并联时，通过选择性地蚀刻衬底上的纳米穿孔并且通过将电极线图案化，以体现大规模纳米线阵列器件 电极变得垂直于电极线的方式，以提高电极连接到纳米线的可能性。 包括纳米线（50）的纳米线溶液沉积在基底上。 在衬底上形成条纹型的第一蚀刻区域以对纳米线进行图案化。 在图案化的纳米线的两侧，彼此平行地形成漏电极线（100）和源电极线（200）。 多个漏电极（110）的一端连接到漏极电极线，其中漏电极与至少一个纳米线接触。 多个源极（210）的一端与源电极线连接，源极与漏极接触的纳米线接触。 在一对漏电极和源电极之间形成第二蚀刻区域，使得该对漏电极和源极电极不彼此接触。 在基板上形成绝缘层（800）。 栅电极（300）形成在绝缘层上，设置在与纳米线接触的源极和漏极之间。
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公开(公告)号：KR1020080022024A
公开(公告)日：2008-03-10
申请号：KR1020060103137
申请日：2006-10-23
Applicant: 한국전자통신연구원
IPC: H01L29/66
Abstract: A molecular electronic device including an organic dielectric thin film and a method for fabricating the same are provided to block a penetrated electrode material from reaching a bottom electrode by increasing a distance from a molecular active layer to the bottom electrode. A molecular electronic device includes a substrate, an organic dielectric thin film(150) formed on the substrate, a molecular active layer(160) formed on the organic dielectric thin film and having a charge trap site, and an electrode(110) formed on the molecular active layer. The organic dielectric thin film comprises a molecular structure represented by M-R-T, wherein M is a sulfur-containing group or a silicon-containing group, R is a saturated or unsaturated C1 to C20 hydrocarbon group which is saturated or unsaturated with fluorine, and T is -SH, -NH2, or -COOH.
Abstract translation: 提供了包括有机电介质薄膜的分子电子器件及其制造方法，以通过增加从分子活性层到底部电极的距离来阻止穿透的电极材料到达底部电极。 分子电子器件包括衬底，形成在衬底上的有机介电薄膜（150），形成在有机电介质薄膜上并具有电荷陷阱位置的分子活性层（160）和形成在电极 分子活性层。 有机电介质薄膜包含由MRT表示的分子结构，其中M为含硫基团或含硅基团，R为与氟饱和或不饱和的饱和或不饱和C1至C20烃基，T为 -SH，-NH2或-COOH。
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公开(公告)号：KR100799570B1
公开(公告)日：2008-01-31
申请号：KR1020060053897
申请日：2006-06-15
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
Abstract: 본 발명은 기판 상에 비촉매 금속 아일랜드를 형성하고, 상기 비촉매 금속 아일랜드 주위를 둘러싸게 촉매 금속 도넛을 형성하고, 상기 촉매 금속 도넛 상에 실리콘 나노튜브를 성장시켜 실리콘 나노튜브를 제조한다. 본 발명은 촉매 금속 도넛을 이용하여 실리콘 나노튜브를 효과적으로 성장시킬 수 있다.
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