公开(公告)号：EP2580775A4

公开(公告)日：2014-05-07

申请号：EP11793204

申请日：2011-06-09

Applicant: SOLEXEL INC

Inventor： KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

公开(公告)号：EP2412029A4

公开(公告)日：2013-10-02

申请号：EP10756809

申请日：2010-03-24

Applicant: SOLEXEL INC

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/035281 ,  C30B29/06 ,  C30B31/22 ,  H01L31/1892 ,  Y02E10/50

公开(公告)号：EP2394296A4

公开(公告)日：2013-07-31

申请号：EP10739242

申请日：2010-02-08

Applicant: SOLEXEL INC

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L21/762 ,  H01L21/20 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L21/76229 ,  H01L21/76232 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2817819A4

公开(公告)日：2015-09-02

申请号：EP13752284

申请日：2013-02-26

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN

IPC: H01L31/18 ,  B23K26/00 ,  H01L21/268

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供了方法和系统，用于使用激光照射从较厚的施主晶片分离和分离包含光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：EP2534700A4

公开(公告)日：2015-04-29

申请号：EP11742933

申请日：2011-02-12

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L21/20 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2404317A4

公开(公告)日：2014-06-11

申请号：EP10749454

申请日：2010-03-08

Applicant: SOLEXEL INC

Inventor： RICOLCOL RAFAEL ,  KRAMER JOE ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L21/4763 ,  H01L27/142 ,  H01L31/18

CPC classification number: H01L21/30608 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2436028A4

公开(公告)日：2013-10-02

申请号：EP10781392

申请日：2010-06-01

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI

IPC: H01L21/00 ,  H01L21/306 ,  H01L27/142 ,  H01L29/04 ,  H01L31/0352

CPC classification number: H01L31/0352 ,  H01L21/00 ,  H01L27/142 ,  H01L31/022458 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0468 ,  H01L31/054 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.

Abstract translation: 提供了一种用于三维薄膜半导体衬底的制造具有选择性的通孔的方法。 的多孔半导体层共形地形成在半导体模板包括通过沿（100）结晶取向的半导体模板的平面和倒金字塔形的腔体的多个对齐的顶表面区域限定的三维倒锥体的表面特征的多个侧壁限定 沿（111）结晶取向的半导体模板的平面对齐。 外延半导体层共形地形成在多孔半导体层上。 外延半导体层从半导体模板释放。 通孔有选择地形成的外延半导体层与和所述外延半导体层的背面侧表面的平面前部之间的开口，以形成部分透明的三维薄膜半导体衬底。

公开(公告)号：EP2356675A4

公开(公告)日：2013-05-01

申请号：EP09826880

申请日：2009-11-13

Applicant: SOLEXEL INC

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L21/368

CPC classification number: H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

公开(公告)号：EP2915195A4

公开(公告)日：2016-07-27

申请号：EP13850237

申请日：2013-11-05

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/02245 ,  H01L31/0443 ,  H01L31/0445 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/50

公开(公告)号：EP2780952A4

公开(公告)日：2015-08-12

申请号：EP12850632

申请日：2012-11-20

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  WINGERT MICHEAL

IPC: H01L31/042 ,  G05F1/67 ,  H02S40/32

CPC classification number: H01L31/0516 ,  H01L27/1421 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/0504 ,  H01L31/0725 ,  H02S40/32 ,  Y02E10/50