公开(公告)号：ITMI20022700A1

公开(公告)日：2004-06-21

申请号：ITMI20022700

申请日：2002-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： FRISINA FERRUCCIO ,  SAGGIO MARIO

IPC: H01L20060101 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

公开(公告)号：DE69839439D1

公开(公告)日：2008-06-19

申请号：DE69839439

申请日：1998-05-26

Applicant: ST MICROELECTRONICS SRL

Inventor： MAGRI' ANGELO ,  FRISINA FERRUCCIO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/739

Abstract: High density MOS technology power device structure, comprising body regions (31A-31D) of a first conductivity type formed in a semiconductor layer (1) of a second conductivity type, characterized in that said body regions comprise at least one plurality of substantially rectilinear and substantially parallel body stripes (32) each joined at its ends to adjacent body stripes (32) by means of junction regions (33), so that said at least one plurality of body stripes (32) and said junction regions (33) form a continuous, serpentine-shaped body region (31A-31D).

公开(公告)号：DE60112726D1

公开(公告)日：2005-09-22

申请号：DE60112726

申请日：2001-05-15

Applicant: ST MICROELECTRONICS SRL

Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  FRISINA FERRUCCIO

IPC: H01L31/0288 ,  H01L31/107

Abstract: The high-gain photodetector (1) is formed in a semiconductor-material body (5) which houses a PN junction (13, 14) and a sensitive region (19) that is doped with rare earths, for example erbium (Er). The PN junction (13, 14) forms an acceleration and gain region (13, 14) separate from the sensitive region (19). The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region (19). Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction (13-14), which is transparent to light, can be captured by an erbium ion in the sensitive region (19), so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

公开(公告)号：ITMI20042245A1

公开(公告)日：2005-02-19

申请号：ITMI20042245

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： BAZZANO GAETANO ,  FERLA GIUSEPPE ,  FRISINA FERRUCCIO ,  GRIMALDI ANTONIO ,  MAGRI ANGELO

公开(公告)号：DE60016245D1

公开(公告)日：2004-12-30

申请号：DE60016245

申请日：2000-09-01

Applicant: ST MICROELECTRONICS SRL

Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  SAGGIO MARIO ,  FRISINA FERRUCCIO

IPC: H01S3/16 ,  H01S5/30 ,  H01S5/32

Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.

公开(公告)号：DE69631524D1

公开(公告)日：2004-03-18

申请号：DE69631524

申请日：1996-07-05

Applicant: ST MICROELECTRONICS SRL

Inventor： MAGRI ANGELO ,  ZAMBRANO RAFFAELE ,  FRISINA FERRUCCIO

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/739

Abstract: A MOS technology power device comprises a semiconductor substrate (1), a semiconductor layer (2) of a first conductivity type superimposed over the semiconductor substrate (1), an insulated gate layer (5,6,7;51,52,6,7) covering the semiconductor layer (2), a plurality of substantially rectilinear elongated openings (10) parallel to each other in the insulated gate layer, a respective plurality of elongated body stripes (3) of a second conductivity type formed in the semiconductor layer (2) under the elongated openings (10), source regions (4) of the first conductivity type included in the body stripes (3) and a metal layer (9) covering the insulated gate layer and contacting the body stripes and the source regions through the elongated openings. Each body stripe comprises first portions (31) substantially aligned with a first edge of the respective elongated opening and extending under a second edge of the elongated opening to form a channel region, each first portion (31) including a source region (4) extending substantially from a longitudinal axis of symmetry of the respective elongated opening to the second edge of the elongated opening, and second portions (32), longitudinally intercalated with the first portions (31), substantially aligned with the second edge of the elongated opening and extending under the first edge of the elongated opening to form a channel region, each second portion including a source region extending substantially from the longitudinal axis of symmetry to the first edge of the elongated opening, the first portions (31) and second portions (32) of the body stripes (3) being respectively aligned in a direction transversal to the longitudinal axis.