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    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP
    72.
    发明公开
    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP 有权
    玻璃或石英芯片的等离子体辅助显微结构对准和预结合方法

    公开(公告)号：EP3306650A1

    公开(公告)日：2018-04-11

    申请号：EP15903951.0

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： GUO, Guangsheng ,  WANG, Siyu ,  PU, Qiaosheng ,  WANG, Xiayan

    IPC: H01L21/60 ,  H01L21/68

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    Abstract translation: 等离子体辅助玻璃和石英微结构微结构的精确对准和预键合方法属于微芯片的微细加工和键合技术。 其步骤如下：将玻璃或石英微芯片上的光刻胶和铬层完全除去，然后用非离子表面活性剂和一定量的超纯水充分清洗表面。 然后利用等离子体清洁装置进行表面处理以获得具有高亲水性的装备表面。 在干燥条件下，借助显微镜观察清洗后，通过移动基板和盖板完成精确对准。 此外，为了实现玻璃和石英微芯片的微结构的精确对准和预粘合，将微量超纯水灌注到边缘缝隙中以进行粘附，并且在充分挤压后通过真空干燥完全擦去全部水。 基于上述步骤，可通过进一步采用热粘合方法实现永久粘合。 总之，用这种方法完成精确对准和预粘接的整个操作需要30分钟。 此外，该方法具有快速，高效，易操作，操作安全，应用广泛等特点。

    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    79.
    发明公开
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 有权
    方法用于蚀刻氧化硅的受害者层

    公开(公告)号：EP2046677A1

    公开(公告)日：2009-04-15

    申请号：EP07789096.0

    申请日：2007-08-02

    Applicant: Point 35 Microstructures Limited

    Inventor： O'HARA, Anthony

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

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