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    METHOD FOR FABRICATING SUSPENDED MEMS STRUCTURES
    72.
    发明申请
    METHOD FOR FABRICATING SUSPENDED MEMS STRUCTURES 审中-公开
    制造悬挂MEMS结构的方法

    公开(公告)号：WO2016167853A1

    公开(公告)日：2016-10-20

    申请号：PCT/US2016/014223

    申请日：2016-01-21

    Applicant: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY ,  MEYER, David, J. ,  DOWNEY, Brian, P.

    Inventor： MEYER, David, J. ,  DOWNEY, Brian, P.

    IPC: B81C1/00 ,  B81B7/00 ,  B81B7/02 ,  H01L27/04

    CPC classification number: B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

    Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

    Abstract translation: 一种用于制造包括部分地或完全地悬置在衬底上的外延半导体功能层的悬置微机电系统（MEMS）结构的工艺。 牺牲释放层和功能器件层形成在衬底上。 对功能器件层进行蚀刻以在功能器件层中形成窗口，从而界定将从功能器件层形成的悬置MEMS器件的轮廓。 然后用选择性释放蚀刻剂对牺牲释放层进行蚀刻，以去除由窗口限定的区域中的功能层下方的牺牲释放层，以形成悬浮的MEMS结构。

    PROCESS AND SYSTEM FOR FABRICATION OF PATTERNS ON A SURFACE
    77.
    发明申请
    PROCESS AND SYSTEM FOR FABRICATION OF PATTERNS ON A SURFACE 审中-公开
    在表面上制作图案的过程和系统

    公开(公告)号：WO2010003600A1

    公开(公告)日：2010-01-14

    申请号：PCT/EP2009/004846

    申请日：2009-07-03

    Applicant: THE PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN ,  CROSS, Graham L. W. ,  McKENZIE, Warren ,  PETHICA, John B.

    Inventor： CROSS, Graham L. W. ,  McKENZIE, Warren ,  PETHICA, John B.

    IPC: G03F7/11 ,  G03F7/00 ,  B81C1/00 ,  H01L21/033

    CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

    Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

    Abstract translation: 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料性质被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。

    ION BEAM ETCHING METHOD AND ION BEAM ETCHING APPARATUS
    78.
    发明申请
    ION BEAM ETCHING METHOD AND ION BEAM ETCHING APPARATUS 审中-公开
    离子束蚀刻方法和离子束蚀刻装置

    公开(公告)号：WO2008017733A1

    公开(公告)日：2008-02-14

    申请号：PCT/FI2007/050440

    申请日：2007-08-09

    Applicant: JYVÄSKYLÄN YLIOPISTO ,  TOUBOLTSEV, Vladimir ,  KAARRE, Marko ,  ARUTYUNOV, Konstantin

    Inventor： TOUBOLTSEV, Vladimir ,  KAARRE, Marko ,  ARUTYUNOV, Konstantin

    IPC: B82B3/00 ,  H01L21/263 ,  H01L21/64 ,  H01L29/06 ,  H01L49/00

    CPC classification number: H01J37/20 ,  B81C1/00531 ,  B81C2201/0143 ,  B82Y10/00 ,  H01J37/3056 ,  H01J2237/20214 ,  H01J2237/24528 ,  H01J2237/3174 ,  H01L21/2633

    Abstract: An ion beam etching method for processing three dimensional nanostructures, wherein a pre-fabricated nanostructure (12) formed on a substrate (8) is etched three dimensionally by bombarding the nanostructure in vacuum conditions by a beam of low-energy medium-mass ions (5) at a glancing incident angle (α) with respect to the substrate while rotating the nanostructure about an axis (N) normal to the substrate. According to the invention, the energy per mass of the ions is within a range of 0.0025 - 0.0225 keV/amu; and the incident angle (α) of the ion beam (5) with respect to the substrate (8) is within a range of 30 - 50 degrees, preferably about 40 degrees.

    Abstract translation: 一种用于处理三维纳米结构的离子束蚀刻方法，其中通过在低能量中质量离子束的真空条件下轰击纳米结构，三维地蚀刻形成在基底（8）上的预制纳米结构（12） 5）相对于基板扫掠入射角（a），同时使纳米结构围绕与基板垂直的轴线（N）旋转。 根据本发明，每质量离子的能量在0.0025-0.0225keV / amu的范围内; 并且离子束（5）相对于基板（8）的入射角（a）在30-50度，优选约40度的范围内。

    A METHOD OF FABRICATING TRIDIMENSIONAL MICRO- AND NANO­STRUCTURES AS WELL AS OPTICAL ELEMENT ASSEMBLY HAVING A TRIDIMENSIONAL CONVEX STRUCTURE OBTAINED BY THE METHOD
    79.
    发明申请
    A METHOD OF FABRICATING TRIDIMENSIONAL MICRO- AND NANO­STRUCTURES AS WELL AS OPTICAL ELEMENT ASSEMBLY HAVING A TRIDIMENSIONAL CONVEX STRUCTURE OBTAINED BY THE METHOD 审中-公开
    一种制造三维微结构和纳米结构的方法，作为具有由方法获得的三维结构的光学元件组件

    公开(公告)号：WO2006087744A1

    公开(公告)日：2006-08-24

    申请号：PCT/IT2005/000093

    申请日：2005-02-21

    Applicant: CONSIGLIO NAZIONALE DELLE RICERCHE - INFM ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA ,  TORMEN, Massimo ,  CARPENTIERO, Alessandro ,  DI FABRIZIO, Enzo Mario

    Inventor： TORMEN, Massimo ,  CARPENTIERO, Alessandro ,  DI FABRIZIO, Enzo Mario

    IPC: B81C1/00 ,  C03B11/08 ,  G02B3/00

    CPC classification number: B81C99/009 ,  B81B2207/056 ,  B81C99/0085 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y20/00 ,  G02B3/0012

    Abstract: A method is described for forming three-dimensional micro ­and nanostructures, based on the structuring of a body of material by means of a mould having an impression area which reproduces the said three-dimensional structure in negative form, characterized in that it comprises the operations of: - providing a mould comprising a substrate of a material which can undergo isotropic chemical etching, in which the said impression area is to be formed; defining an etching pattern on (in) the substrate, comprising a plurality of etching areas having zero-, uni- or bidimensional extension, which can be reached by an etching agent; and - carrying out a process of isotropic chemical etching of the substrate from the said etching areas for a corresponding predetermined time, so as to produce cavities which in combination make up the aforesaid impression area. This method is advantageously used in the fabrication of sets of microlenses with a convex three-dimensional structure, of the refractive or hybrid refractive/diffractive type, for forming images on different focal planes.

    Abstract translation: 描述了一种用于形成三维微结构和纳米结构的方法，其基于通过具有以负面形式再现所述三维结构的印模区域的模具来构造材料体，其特征在于，其包括操作 - 提供一种模具，其包括可以经历各向同性化学蚀刻的材料的基底，其中将形成所述印模区域; 在所述衬底上限定蚀刻图案，包括可以通过蚀刻剂达到的具有零，一维或二维延伸的多个蚀刻区域; 并且在相应的预定时间内，从所述蚀刻区域执行基板的各向同性化学蚀刻处理，以便产生组合所述印象区域的空腔。 该方法有利地用于制造具有折射或混合折射/衍射类型的凸立体结构的微透镜组，用于在不同焦平面上形成图像。

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