公开(公告)号：EP2599747A3

公开(公告)日：2014-10-15

申请号：EP12195311.1

申请日：2012-12-03

Applicant: Yokogawa Electric Corporation

Inventor： Noda, Ryuichiro ,  Yoshida, Takashi

IPC: B81C1/00 ,  H03H3/007 ,  H04R31/00

CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

公开(公告)号：EP2707953A1

公开(公告)日：2014-03-19

申请号：EP12786090.6

申请日：2012-05-11

Applicant: Teknologian tutkimuskeskus VTT

Inventor： PRUNNILA, Mika ,  JAAKKOLA, Antti ,  PENSALA, Tuomas

IPC: H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100°C. The device can be a resonator. Also a method of designing the device is disclosed.

公开(公告)号：EP1452481B1

公开(公告)日：2007-12-19

申请号：EP04100440.9

申请日：2004-02-05

Applicant: Dalsa Semiconductor Inc.

Inventor： Ouelett, Luc ,  Antaki, Robert

IPC: B81B7/00 ,  B81C5/00 ,  B81B3/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

公开(公告)号：EP1452481A3

公开(公告)日：2005-10-12

申请号：EP04100440.9

申请日：2004-02-05

Applicant: Dalsa Semiconductor Inc.

Inventor： Ouelett, Luc ,  Antaki, Robert

IPC: B81B7/00 ,  B81C5/00 ,  B81B3/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

公开(公告)号：EP1269526A2

公开(公告)日：2003-01-02

申请号：EP01923913.6

申请日：2001-04-05

Applicant: Interuniversitair Micro-Elektronica Centrum (IMEC)

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

公开(公告)号：EP2707953A4

公开(公告)日：2014-12-03

申请号：EP12786090

申请日：2012-05-11

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

IPC: H03H9/02 ,  B81B3/00 ,  H03H9/24

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

公开(公告)号：EP2599747A2

公开(公告)日：2013-06-05

申请号：EP12195311.1

申请日：2012-12-03

Applicant: Yokogawa Electric Corporation

Inventor： Noda, Ryuichiro ,  Yoshida, Takashi

IPC: B81C1/00

CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

Abstract translation: 制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，其包括：第一硅层; 在所述第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 和（f）通过蚀刻去除氧化硅层的至少一部分，使得在第一硅层和由第一和第二间隙围绕的第二硅层的区域之间形成气隙。

公开(公告)号：EP1213259B1

公开(公告)日：2007-05-23

申请号：EP01128161.5

申请日：2001-11-27

Applicant: MICROSCAN SYSTEMS INCORPORATED ,  Xerox Corporation

Inventor： Zosel, Andrew J. ,  Gulvin, Peter M. ,  Chen, Jingkuang ,  Kubby, Joel A. ,  Lin, Chuang-Chia ,  Tran, Alex T.

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81B2203/058 ,  B81C2201/014 ,  B81C2201/0164 ,  B81C2201/056 ,  G02B26/0833

公开(公告)号：EP1197778A3

公开(公告)日：2003-07-16

申请号：EP01308610.3

申请日：2001-10-09

Applicant: Agere Systems Guardian Corporation ,  Lucent Technologies Inc.

Inventor： Aksyuk, Vladimir A. ,  Jin, Sungho ,  Kim, Jungsang ,  Mavoori, Hareesh ,  Pardo, Flavio ,  Ramirez, Ainissa

IPC: G02B26/08 ,  B81B3/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0164 ,  G02B6/122 ,  G02B6/266 ,  G02B2006/12104

Abstract: The present invention provides a micro-electro-mechanical system (MEMS) optical device (100). The micro-electro-mechanical system (MEMS) optical device (100) includes a mirror (110) having a substrate (140) with an implanted light reflective optical layer (130) thereover, and a mounting substrate (120) on which the mirror (110) is movably mounted. The inclusion of the dopant (150) within the light reflective optical layer (130) increases the tensile stress of the device (100) and tends to correct the concave curvature of the mirror structure toward a desirably flat configuration.

公开(公告)号：EP1213259A2

公开(公告)日：2002-06-12

申请号：EP01128161.5

申请日：2001-11-27

Applicant: MICROSCAN SYSTEMS INCORPORATED ,  XEROX CORPORATION

Inventor： Zosel, Andrew J. ,  Gulvin, Peter M. ,  Chen, Jingkuang ,  Kubby, Joel A. ,  Lin, Chuang-Chia ,  Tran, Alex T.

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81B2203/058 ,  B81C2201/014 ,  B81C2201/0164 ,  B81C2201/056 ,  G02B26/0833

Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

Abstract translation: 本发明提供了一种微机械或微光学机械结构。 该结构是由一种方法，包括限定通过从层基底绝缘层上分离的单晶硅层上的结构所产生; 沉积和在单晶硅层上蚀刻多晶硅层，与其余polysilcon形成该结构的机械或光学元件; 露出单晶硅层的选定区域; 和释放所形成的结构。