Abstract:
A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.
Abstract:
Disclosed is a luminance compensation apparatus of an organic light emitting diode panel including a reference pixel element unit that is installed at an outer peripheral portion of a display area on an organic light emitting diode panel and operate corresponding to a pixel element aligned in the display area, and a driving chip that is provided in an area including the reference pixel element unit of the outer peripheral portion of the display area, compares a luminance value of light incident from the reference pixel element unit with a reference luminance value to calculate a luminance deviation value based on a comparison result, controls driving of pixel elements aligned in the display area according to the luminance deviation value, and allows light, luminance deviation of which has been compensated, to be irradiated.
Abstract:
A 4-color pixel image sensor having a visible color noise reduction function in a near infrared ray (NIR) pixel may include an active pixel region having a plurality of photodiodes, a plurality of first metal layers, a plurality of color filters, a first NIR pixel and a micro-lens, which are stacked, wherein the plurality of photodiodes are arranged in series and the plurality of color filters are formed to be adjacent to each other in series; an NIR optical black pixel region having a plurality of photodiodes and a second NIR pixel, which are stacked, wherein the plurality of photodiodes are arranged in series; and a visible optical black pixel region having a plurality of photodiodes, a second metal layer, a plurality of color filters and a micro-lens, which are stacked, wherein the plurality of photodiodes are arranged in series, and the plurality of color filters are formed to be adjacent to each other in series, wherein the active pixel region, the NIR optical black pixel region and the visible optical black pixel region are arranged on a same substrate in series.
Abstract:
A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.
Abstract:
The present disclosure relates to a method for divided scanning of a touch panel, in which a touch panel scanning process is divided into a pre-scan process and a main scan process. According to the embodiment of the present invention, a touch panel scan process, which had been performed in existing touch panels, may be divided into a pre-scan process and a main scan process, and the performed in various manners. Thus, while power consumption is reduced, the speed of response to an external touch can be improved.
Abstract:
The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity. To this end, the first to fourth photodiodes are formed in the first substrate, the fifth photodiode is formed in the second substrate, the first to fourth photodiodes and the fifth photodiode make electrical contact with each other, and pixel array sizes of the first substrate and the second substrate are allowed to be different from each other, so that sensor resolution of the first substrate and sensor resolution of the second substrate are different from each other.
Abstract:
The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.
Abstract:
The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.
Abstract:
The present disclosure relates to a method for divided scanning of a touch panel, in which a touch panel scanning process is divided into a pre-scan process and a main scan process. According to the embodiment of the present invention, a touch panel scan process, which had been performed in existing touch panels, may be divided into a pre-scan process and a main scan process, and the performed in various manners. Thus, while power consumption is reduced, the speed of response to an external touch can be improved.
Abstract:
Disclosed is a phase difference detection pixel using a microlens, which detects a phase difference without the loss of an input signal by modifying the shape of a microlens, which collects light incident into a photodiode, such that the light passes through only in a specific direction. In the phase difference detection pixel using a microlens, a signal reduction problem, which is a disadvantage of the existing phase difference detection pixel, is solved and a phase difference detection function is achieved in all areas of an image sensor. The phase difference detection pixel using a microlens is variously applied for distance measurement between objects or three-dimensional image capturing.