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公开(公告)号：KR101108495B1
公开(公告)日：2012-01-31
申请号：KR1020090115590
申请日：2009-11-27
Applicant: 한국과학기술연구원
IPC: G01N21/61 , G01N21/3504
Abstract: 본 발명은 적외선 광의 난반사 및 산란을 이용한 비분산 적외선 가스 센서에 관한 것이다.
본 발명에서는 광 검출 효율을 높일 수 있도록 비냉각형 볼로미터 센서를 구비하고, 광 경로 상에서 특정 가스에 흡수되는 광량을 최대화 할 수 있도록 광 공동 내부에 구성된 적어도 1개의 반사경 표면에 나노 및 마이크로미터 사이즈 이상 특정 형태의 어레이 패턴을 형성하고, 광원 램프로부터 방출 된 광이 반사경 표면의 패턴에 의해 난반사와 산란을 일으켜, 단위 체적 당 광 경로를 크게 증가시키도록 구성하여, 광 공동의 부피를 크게 줄이고, 가스에 흡수된 적외선 변화량에 대하여 높은 민감도와 신호 세기를 가지는 비분산 적외선 가스센서가 제시된다.
비분산, 난반사, 산란, 가스센서, NDIR, 적외선-
公开(公告)号：KR1020110057651A
公开(公告)日：2011-06-01
申请号：KR1020090114131
申请日：2009-11-24
Applicant: 한국과학기술연구원
IPC: G01N21/61 , G01N21/3504
Abstract: PURPOSE: An infrared gas sensor is provided to remarkably increase the quantity that light emitted from a light source is reflected inside a light cavity by reducing the thickness of the light cavity. CONSTITUTION: An infrared gas sensor comprises a light cavity(100), a reflector, an uncooled bolometer sensor(107), a light source lamp(111), a Fresnel lens(106), and a parabolic mirror(105). The light cavity has one or more gas inlets. The reflector is installed in one inner end of the light cavity. The uncooled bolometer sensor is installed in the other inner end of the light cavity. The light source lamp is installed between the reflector and the uncooled bolometer sensor to be contiguous to the reflector. The Fresnel lens is installed between the light source lamp and the uncooled bolometer sensor to be contiguous to the uncooled bolometer sensor. The parabolic mirror is installed between the uncooled bolometer sensor and the Fresnel lens.
Abstract translation: 目的：提供红外气体传感器，通过减小光腔的厚度，显着增加从光源发出的光在光腔内反射的光量。 构成：红外气体传感器包括光腔（100），反射器，未冷却的测辐射热计传感器（107），光源灯（111），菲涅尔透镜（106）和抛物面镜（105）。 光腔具有一个或多个气体入口。 反射器安装在光腔的一个内端。 未冷却的测辐射热计传感器安装在光腔的另一个内端。 光源灯安装在反射器和未冷却的测辐射热计传感器之间以与反射器邻接。 菲涅尔透镜安装在光源灯和未冷却的测辐射热计传感器之间，与未冷却的测辐射热计传感器相邻。 抛物面镜安装在未冷却的测辐射热计传感器和菲涅尔透镜之间。
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公开(公告)号：KR1020060032900A
公开(公告)日：2006-04-18
申请号：KR1020040081903
申请日：2004-10-13
Applicant: 한국과학기술연구원
IPC: H01L21/66
CPC classification number: G01R1/06733 , G01R3/00 , G01R31/2601
Abstract: 본 발명은 경사노광방식을 이용한 경사구조 프로브 팁의 반도체 검사장치 제조방법에 관한 것이다.
기존에는 이열구조의 반도체 패드 및 행렬 배열 반도체 패드의 검사를 위해 수직형 프로브 팁이 개발되었다.
본 발명에서는 프로브 팁의 기계적 특성 향상을 위해 경사구조 프로브 팁을 경사노광기를 이용하여 제작하는 방법을 제시한다.
본 발명의 경사노광기를 이용한 경사구조 프로브 팁의 반도체 검사장치 제조방법은 인쇄회로(50)기판에 프로브 팁(40)과 전기신호 연결을 위해 세라믹 재질의 보강판(10)에 관통홀(20)을 가공하고 관통홀에 전기도금 공정을 하여 전기배선을 형성한다. 그 보강판 위에 직접 경사구조 수직형 프로브 팁을 제작하여 기존의 접합방식에서 발생하는 생산성 저하 및 공정 안정화를 극복하기 위해 접합공정을 제거함으로써 완성되는 발명이 제시된다.
반도체 검사장치 , 프로브 팁, 프로브 팁 보강판, 경사구조, 경사노광기-
公开(公告)号：KR100509580B1
公开(公告)日：2005-08-22
申请号：KR1020000023921
申请日：2000-05-04
Applicant: 한국과학기술연구원
IPC: H01L27/146
Abstract: 본 발명은 초소형 3차원 수신안테나 어레이 구조의 일체형 적외선 이미지소자에 관한 것으로, MEMS의 여러 기술을 이용하여 3차원의 수신안테나 어레이 구조체를 형성한 후 이를 적외선 감지소자 어레이와 접합시켜 일체화된 형태의 적외선 이미지 감지소자를 제조함으로서 적외선 감지소자의 성능을 향상시킬 수 있는 일체형 적외선 이미지소자 및 제조방법에 관한 것이다.
본 발명에 의하면, 일체형 적외선 이미지소자의 구조에 있어서, 자외선의 노광량을 정밀하게 조절하여 구조물에 균일한 경사를 줌으로서 형성된 혼 형태의 3차원 안테나 어레이와; 반도체기판 상에 형성된 적외선 감지소자와; 상기 적외선 감지소자 위에 3차원 안테나 어레이를 결합시킴으로서 지향성을 통해 불필요한 잡음 성분을 제거하며, 상기 3차원 안테나 어레이의 윗면적 만큼의 빛을 아래의 적외선 감지소자에서 동일하게 흡수하도록 하는 것을 특징으로 하는 일체형 적외선 이미지소자를 제시한다. 따라서, 본 발명은 기존의 마이크로웨이브 영역에서 사용되던 안테나들을 대체할 수 있으며, 고성능의 적외선 이미지소자 분야 및 마이크로 웨이브영역에서 사용되는 모든 초고주파 소자에도 적용할 수 있다.-
公开(公告)号：KR100467480B1
公开(公告)日：2005-01-24
申请号：KR1020020013266
申请日：2002-03-12
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for fabricating a high quality nano thin film for an infrared detecting device is provided to perform a low temperature process without an expensive ion apparatus and improve repeatability of a thin film without depositing several tens of thin films by forming a vanadium oxide nano thin film. CONSTITUTION: A sandwich-type nano thin film structure is formed in which vanadium oxide layers(10,30) are used as an upper layer and a lower layer and a metal layer(20) is used as an insertion layer. A heat treatment process is performed in an oxygen atmosphere so that the lower vanadium oxide layer is deoxidized to the metal layer so as to be a mixed phase(40) by oxygen diffusion. The metal layer is oxidized to be a mixed phase by the oxygen diffused from the surface and the lower layer, including a mixed phase of a VO2 and V2O5 phase contributing to a high temperature coefficient of resistance(TCR) value and a V2O3 phase contributing to a low resistance value.
Abstract translation: 目的：提供一种用于制造用于红外检测装置的高质量纳米薄膜的方法，以在没有昂贵的离子装置的情况下进行低温处理，并且通过形成氧化钒纳米颗粒而不沉积数十个薄膜来提高薄膜的重复性 薄膜。 构成：形成三明治型纳米薄膜结构，其中氧化钒层（10,30）用作上层和下层，金属层（20）用作插入层。 在氧气氛中进行热处理工艺，使得下氧化钒层脱氧成金属层，从而通过氧扩散成为混合相（40）。 通过从表面和下层扩散的氧，金属层被氧化成混合相，包括有助于高电阻温度系数（TCR）值和V 2 O 3相的V 2 O和V 2 O 5相的混合相， 低电阻值。
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Patent Agency Ranking
公开(公告)号：KR1020040050502A
公开(公告)日：2004-06-16
申请号：KR1020020078353
申请日：2002-12-10
IPC: G02B6/40
Abstract: PURPOSE: A method for fabricating a V-groove structure using a photoresist is provided to replace a prior silicon V-groove with a slant micro V-groove structure using the photoresist on a wafer. CONSTITUTION: According to the method for fabricating a V-groove(12) structure using a photoresist(16), a photo mask is placed on a substrate(13) coated with a photoresist and then it is exposed to light(14) slantly. It is exposed twice by changing an incident angle of the light and thus a slant side has a different angle. The substrate coated with a photoresist is exposed using a gray level mask(17) by controlling the penetration of the exposure light differently, and thus the V-groove structure is fabricated by making the exposure light be incident vertically and by controlling an intensity of the light.
Abstract translation: 目的：提供一种使用光致抗蚀剂制造V型槽结构的方法，以在晶片上使用光致抗蚀剂替代具有倾斜微V形槽结构的现有硅V槽。 构成：根据使用光致抗蚀剂（16）制造V槽（12）结构的方法，将光掩模放置在涂有光致抗蚀剂的基板（13）上，然后将其暴露于光（14）。 通过改变光的入射角来曝光两次，因此倾斜侧具有不同的角度。 使用灰度级掩模（17）通过控制曝光光的穿透而不同地曝光涂覆有光致抗蚀剂的基板，因此通过使曝光光垂直入射并通过控制曝光光的强度来制造V形槽结构 光。
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公开(公告)号：KR100395244B1
公开(公告)日：2003-08-21
申请号：KR1020010028896
申请日：2001-05-25
Applicant: 한국과학기술연구원
IPC: H01L27/146
CPC classification number: H01L27/146
Abstract: PURPOSE: A method for fabricating an image sensing device combined with a three-dimensional horn antenna is provided to improve sensitivity of the image sensing device by using a MEMS(Micro Electro Mechanical System). CONSTITUTION: A sacrificial oxide layer is formed on a semiconductor substrate(100). A sacrificial oxide layer pattern is formed by performing a patterning process using an etch mask. The first silicon nitride layer(106) is deposited thereon. The first silicon nitride layer pattern is formed by performing the patterning process. A vanadium oxide layer(110) is deposited thereon. A vanadium oxide layer pattern is formed by the patterning process. A conductive layer(114) is deposited thereon. A conductive layer pattern is formed by performing the patterning process. The second silicon nitride layer(118) is deposited thereon. The second silicon nitride pattern is formed by performing the patterning process. The third silicon layer(122) is deposited thereon. A sidewall space is formed by performing the patterning process. The sacrificial oxide layer is removed. A sense device combined with a three-dimensional horn antenna is completed by using an etch mask.
Abstract translation: 目的：提供一种制造与三维喇叭天线相结合的图像传感装置的方法，以通过使用MEMS（微机电系统）来提高图像传感装置的灵敏度。 构成：在半导体衬底（100）上形成牺牲氧化物层。 通过使用蚀刻掩模执行构图工艺来形成牺牲氧化物层图案。 第一氮化硅层（106）沉积在其上。 通过执行构图工艺形成第一氮化硅层图案。 氧化钒层（110）沉积在其上。 通过构图工艺形成钒氧化物层图案。 导电层（114）沉积在其上。 通过执行构图工艺形成导电层图案。 第二氮化硅层（118）沉积在其上。 通过执行构图工艺形成第二氮化硅图案。 第三硅层（122）沉积在其上。 通过执行构图工艺形成侧壁空间。 牺牲氧化层被去除。 通过使用蚀刻掩模来完成与三维喇叭天线组合的感测装置。
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公开(公告)号：KR1020030039630A
公开(公告)日：2003-05-22
申请号：KR1020010070627
申请日：2001-11-14
Applicant: 한국과학기술연구원
Inventor： 문성욱
IPC: H02K99/00
Abstract: PURPOSE: A micro generator is provided to allow for simple operation and eliminate the necessity of power supply, by driving the generator by the flow of the fluid. CONSTITUTION: A micro generator comprises a fluid pipe(40) for flowing a fluid by the pressure applied when a human body walks or runs; a storage unit(50) for storing the fluid flowing through the fluid pipe; a generator(60) for generating electrical energy by the flow of the fluid stored in the storage unit; and the first switch(70a) and the second switch(70b) mounted in front and rear of the generator, and which prevent backflow of the fluid. The generator generates electrical energy by using a micro fluidic system.
Abstract translation: 目的：提供微型发电机，以便通过流体的流动驱动发电机，实现简单的操作，消除电源的需要。 构成：微发电机包括流体管道（40），用于当人体行进或运行时施加的压力使流体流动; 存储单元（50），用于存储流过所述流体管道的流体; 用于通过存储在所述存储单元中的流体的流动产生电能的发电机（60） 以及安装在发电机的前后的第一开关（70a）和第二开关（70b），并且防止流体的回流。 发电机通过使用微流体系统产生电能。
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公开(公告)号：KR1020030034608A
公开(公告)日：2003-05-09
申请号：KR1020010066260
申请日：2001-10-26
Applicant: 한국과학기술연구원
IPC: G02B26/00
Abstract: PURPOSE: A method for manufacturing an optical switch by using an ultraviolet rays LIGA technique is provided to prevent the generation of crack due to the relatively small residual stress by utilizing a polymer as a photo resist material during the manufacture of the optical switch, thereby improving the adhesion to the ground layer. CONSTITUTION: A method for manufacturing an optical switch by using an ultraviolet rays LIGA technique includes the steps of: forming an oxidation layer(20) on a semiconductor substrate(10) to a predetermined thickness, forming a polymer thick layer(30) on the oxidation layer(20) formed on the semiconductor substrate(10) by using the polymer as the photo resist material, removing a solvent resided at the formed polymer thick layer(30) by a soft baking, initializing so as to combine of a material consisting of the polymer thick layer(30) by implementing a photolithography on a negative type mask after the soft baking, accelerating the combination of the material of the initialized polymer thick layer by a post baking after the process of the photolithography, developing so as to pattern a specific region of the polymer thick layer(30) to a predetermined thickness after the post baking, depositing an electroplating material on the patterned region of the polymer thick layer(30) and etching the resided photo resist material by using a conventional removing material after the deposition of the electroplating material.
Abstract translation: 目的：提供一种使用紫外线LIGA技术制造光开关的方法，以防止在光开关制造期间利用聚合物作为光致抗蚀剂材料，由于残留应力相对较小而产生裂纹，从而改善 对地层的粘附。 构成：通过使用紫外线LIGA技术制造光开关的方法包括以下步骤：在半导体衬底（10）上形成预定厚度的氧化层（20），在其上形成聚合物厚层（30） 通过使用聚合物作为光致抗蚀剂材料形成在半导体衬底（10）上的氧化层（20），通过软烘烤除去形成在聚合物厚层（30）上的溶剂，进行初始化，以组合 通过在软烘烤之后在负型掩模上实施光刻法，在光刻之后通过后烘烤加速初始化的聚合物厚层的材料的组合，以形成图案 聚合物厚层（30）的特定区域在后烘烤后达到预定厚度，在聚合物厚层（30）的图案化区域上沉积电镀材料和etchi 在沉积电镀材料之后，使用常规的去除材料来涂覆驻留的光致抗蚀剂材料。
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公开(公告)号：KR100368792B1
公开(公告)日：2003-01-24
申请号：KR1020000043855
申请日：2000-07-28
Applicant: 한국과학기술연구원
IPC: H01L31/101 , G01J1/02
Abstract: PURPOSE: A method for manufacturing an infrared detection layer using a multilayered thin film method is provided to induce sufficient diffusion of oxygen to a single-layered thin film and to guarantee repeatability of a manufacturing process, by using two single-layered thin films which are stably manufactured by using general sputtering equipment. CONSTITUTION: A silicon nitride layer(200) is formed on a semiconductor substrate(100). The first vanadium oxide thin film(300) is formed on the silicon nitride layer. The first vanadium metal thin film(400) is formed on the first vanadium oxide thin film. The second vanadium oxide thin film(500) is formed on the first vanadium metal thin film. The n-th vanadium metal thin film(1000) is formed on the second vanadium oxide thin film. The n-th vanadium oxide thin film(1100) is formed on the n-th vanadium metal thin film. A heat treatment process is performed regarding the resultant structure to stabilize the multilayered thin film.
Abstract translation: 目的：提供一种使用多层薄膜方法制造红外检测层的方法，以通过使用两层单层薄膜来促使氧充分扩散到单层薄膜并确保制造过程的可重复性 采用通用溅射设备稳定制造。 构成：氮化硅层（200）形成在半导体衬底（100）上。 第一钒氧化物薄膜（300）形成在氮化硅层上。 第一钒金属薄膜（400）形成在第一钒氧化物薄膜上。 第二钒氧化物薄膜（500）形成在第一钒金属薄膜上。 第n钒金属薄膜（1000）形成在第二钒氧化物薄膜上。 第n钒氧化物薄膜（1100）形成在第n钒金属薄膜上。 对所得结构进行热处理工艺以稳定多层薄膜。
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