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公开(公告)号：KR1019960014734B1
公开(公告)日：1996-10-19
申请号：KR1019920025000
申请日：1992-12-22
Applicant: 한국전자통신연구원
IPC: H01S5/125
Abstract: forming a n-bottom DBR mirror layer(3), an n-spacer(4), an active layer(5), a p-spacer(6), a p-contact layer(10) and a top DBR mirror layer(12) on a semiconductor substrate(2) in sequence; etching the wafer to the surface of the p-contact layer(10) after patterning a photoresist(11) on the top DBR mirror layer(12); forming a separating region(7) to isolate the active layer(5) by ion-implantation using the photoresist(11) as a mask; and removing a p-electrode layer(9) and the photoresist(11) on the top DBR mirror layer(12) after forming the p-electrode(9) on the side of the top DBR mirror layer(12) and a n-electrode(1) on the rear surface of the substrate(2).
Abstract translation: 形成n底DBR镜层（3），n间隔物（4），有源层（5），p间隔物（6），p接触层（10）和顶部DBR镜层 12）在半导体衬底（2）上; 在顶部DBR镜层（12）上图案化光致抗蚀剂（11）之后，将晶片蚀刻到p接触层（10）的表面上; 通过使用光致抗蚀剂（11）作为掩模的离子注入形成分离区域（7）以隔离有源层（5）; 以及在顶部DBR镜层（12）侧形成p电极（9）之后，在顶部DBR镜面层（12）上去除p电极层（9）和光致抗蚀剂（11） 电极（1）在基板（2）的后表面上。
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Patent Agency Ranking
公开(公告)号：KR100397371B1
公开(公告)日：2003-09-13
申请号：KR1020010069489
申请日：2001-11-08
Applicant: 한국전자통신연구원
IPC: H01S5/183
CPC classification number: B82Y20/00 , H01S5/18311 , H01S5/18341 , H01S5/18344 , H01S5/34306 , H01S5/34313 , H01S5/3434
Abstract: A long-wavelength VCSEL is provided. The laser includes a first conductive semiconductor substrate, lower mirror layers that are formed on the semiconductor substrate and are proper to the Bregg-reflection, an active layer formed on the lower mirror layer, a current passage layer that is formed on the active layer as a path through which an electric current flows into the active layer, current blocking layers that are formed on the active layer to encompass the current passage layer and limit the path through which an electric current flows into the active layer, an intra-cavity contact layer formed on a portion of the current passage layer and the current blocking layer, upper mirror layers that are formed on a portion of the intra-cavity contact layer and are proper to the Bragg-reflection, a first electrode formed on the exposed surface of the intra-cavity contact layer and the upper mirror layers, and a second electrode formed on a predetermined surface of the semiconductor substrate
Abstract translation: 提供长波长VCSEL。 该激光器包括第一导电半导体衬底，形成在半导体衬底上并且适合于Bregg反射的下镜层，形成在下镜像层上的有源层，形成在有源层上的电流通过层， 电流流入有源层的路径，形成在有源层上以包围电流通过层并限制电流流入有源层的路径的电流阻挡层，腔内接触层 形成在所述电流通过层和所述电流阻挡层的一部分上的第一电极，形成在所述腔内接触层的一部分上且适于布拉格反射的上镜层，形成在所述第一电极的暴露表面上的第一电极 腔内接触层和上镜层，以及形成在半导体衬底的预定表面上的第二电极
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公开(公告)号：KR100395492B1
公开(公告)日：2003-08-25
申请号：KR1020000086751
申请日：2000-12-30
Applicant: 한국전자통신연구원
IPC: H01S5/18
CPC classification number: B82Y20/00 , B82Y10/00 , H01S5/005 , H01S5/0267 , H01S5/18
Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.
Abstract translation: 一种用于产生激光束的折叠腔激光器，包括设有分布式布拉格反射器（DBR）的衬底; 在DBR上方形成的用于放大激光束的有源介质; 第一反射镜和第二反射镜，分别形成在所述有源介质的侧面上，用于形成水平腔并将放大的激光束反射到所述DBR; 以及在与DBR相对的基板上形成的微透镜，用于在经过放大后的激光束之后使其散光。
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公开(公告)号：KR1020030062110A
公开(公告)日：2003-07-23
申请号：KR1020020002534
申请日：2002-01-16
Applicant: 한국전자통신연구원
IPC: H01S5/183
Abstract: PURPOSE: A multi-channel long wavelength VCSEL array and a fabricating method thereof are provided to form constantly an interval of a laser oscillation wavelength by controlling a resonant interval. CONSTITUTION: A multi-channel long wavelength VCSEL array includes a semiconductor substrate(10), a bottom mirror(20), an active region(30), a current limit layer(40), a superlattice control layer(50), and a top mirror(60). The bottom mirror is formed on the semiconductor substrate. The active region is formed on the bottom mirror. The current limit layer is formed on the active region in order to limit efficiently the current and enhance the efficiency of the heat transfer. The superlattice control layer is formed on the current limit layer in order to control an interval of laser oscillation wavelength. The top mirror is formed on the superlattice control layer.
Abstract translation: 目的：提供多通道长波长VCSEL阵列及其制造方法，以通过控制谐振间隔来恒定地形成激光振荡波长的间隔。 构成：多通道长波长VCSEL阵列包括半导体衬底（10），底镜（20），有源区（30），限流层（40），超晶格控制层（50）和 顶镜（60）。 底镜形成在半导体衬底上。 有源区形成在底镜上。 在有源区上形成电流限制层，以有效地限制电流并提高传热的效率。 为了控制激光振荡波长的间隔，在电流限制层上形成超晶格控制层。 上镜子形成在超晶格控制层上。
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公开(公告)号：KR1020030062073A
公开(公告)日：2003-07-23
申请号：KR1020020002494
申请日：2002-01-16
Applicant: 한국전자통신연구원
IPC: H01S5/18
CPC classification number: H01S5/18308 , H01L33/145 , H01S5/02461 , H01S5/0421 , H01S5/18341 , H01S5/18369 , H01S5/2063
Abstract: PURPOSE: A method for fabricating a long wavelength VCSEL(Vertical-Cavity Surface-Emitting Laser) is provided to reduce a current implantation diameter by implanting heavy ions and regrowing a crystal. CONSTITUTION: A lower dispersion Bragg reflection mirror(10), a laser active medium(11), and a heat spreading layer(12) are sequentially grown by considering the thickness of a resonator. A photoresist mask is formed on the heat spreading layer. A current confining layer(13) is formed by implanting ions into an exposed portion of the heat spreading layer. The photoresist mask is removed. An Inp layer(14) and a current spreading layer(15) are formed regrown on the heat spreading layer. An electrode(16) is formed on the current spreading layer. An upper dispersion Bragg reflection mirror(17) is formed thereon. An Au reflective mirror(18) is formed on the upper dispersion Bragg reflection mirror.
Abstract translation: 目的：提供一种用于制造长波长VCSEL（垂直腔表面发射激光器）的方法，以通过注入重离子并重新生长晶体来减小电流注入直径。 构成：通过考虑谐振器的厚度，顺序地生长较低色散的布拉格反射镜（10），激光活性介质（11）和散热层（12）。 在散热层上形成光刻胶掩模。 通过将离子注入到散热层的暴露部分中形成电流限制层（13）。 去除光致抗蚀剂掩模。 在热扩散层上重新形成Inp层（14）和电流扩展层（15）。 在电流扩散层上形成电极（16）。 在其上形成上色散布拉格反射镜（17）。 在上分散布拉格反射镜上形成Au反射镜（18）。
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公开(公告)号：KR100358111B1
公开(公告)日：2002-10-25
申请号：KR1020000083422
申请日：2000-12-28
Applicant: 한국전자통신연구원
IPC: H01S5/20
Abstract: 본 발명은 통신용 다채널 광원으로서 성능을 갖춘 장파장 대역의 표면방출형 레이저 및 그것의 제조방법에 관한 것으로 보다 상세하게는 활성층 상에 두꺼운 내부공진접촉층을 가지는 메사구조 및 이온주입층을 형성하므로써 효과적인 전류주입 및 열분산을 달성할 수 있는 두꺼운 내부공진접촉층을 갖는 장파장 표면방출 레이저 및 그것의 제조방법에 관한 것이다. 상기 메사 구조 및 상기 이온주입층에 의하여 전류가 상기 내부공진접촉층 상의 전극으로부터 상기 내부공진접촉층을 통과하여 상기 메사 구조의 하부에 있는 활성층으로 도달하는 전류유도구경이 형성된다. 이와 함께, 상기 활성층에서 발행한 열은 상기 전류유도구경에 의하여 흐르는 전류와 반대방향으로 상기 내부공진접촉층을 통과하여 그것 상에 형성된 전극을 통하여 배출된다.
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