나노선 다공체의 제조 방법 및 이에 의해 형성된 나노선 다공체
    81.
    发明公开
    나노선 다공체의 제조 방법 및 이에 의해 형성된 나노선 다공체 无效
    形成纳米多孔介质的方法和方法形成的介质

    公开(公告)号:KR1020120055211A

    公开(公告)日:2012-05-31

    申请号:KR1020100116816

    申请日:2010-11-23

    Abstract: PURPOSE: A manufacturing method of a nano wire porous media is provided to form more pores more easily, thereby more easily and simply manufacturing the nano wire porous media, and improving flexibility and durability. CONSTITUTION: A manufacturing method of a nano wire porous media comprises: a step of forming nano wire solution and polymer solution respectively; a step of forming a first mixture solution by mixing the nano wire solution and the polymer solution; a step of forming a second mixture solution including many bubbles by mixing and stirring water and organic solvent; a step of forming a third mixture solution by mixing and stirring the first and the second mixture solution; and a step of forming the nano wire porous media by freezing and drying the third mixture solution; and additionally comprises a step of surface-treating the nano wire porous media by using plasma.

    Abstract translation: 目的:提供纳米线多孔介质的制造方法以更容易地形成更多的孔,从而更容易且简单地制造纳米线多孔介质,并提高柔性和耐久性。 构成:纳米线多孔介质的制造方法包括:分别形成纳米线溶液和聚合物溶液的步骤; 通过混合纳米线溶液和聚合物溶液形成第一混合溶液的步骤; 通过混合和搅拌水和有机溶剂形成包含许多气泡的第二混合溶液的步骤; 通过混合和搅拌第一和第二混合溶液形成第三混合物溶液的步骤; 以及通过冷冻和干燥第三混合物溶液形成纳米线多孔介质的步骤; 并且还包括通过使用等离子体对纳米线多孔介质进行表面处理的步骤。

    가스 저장 구조체 및 이를 포함하는 가스 저장 장치
    85.
    发明公开
    가스 저장 구조체 및 이를 포함하는 가스 저장 장치 有权
    气体存储结构及其使用的气体储存装置

    公开(公告)号:KR1020100072529A

    公开(公告)日:2010-07-01

    申请号:KR1020080130960

    申请日:2008-12-22

    Abstract: PURPOSE: A gas storage structure and a gas storage device including the same are provided to easily inject gas into a gas storage unit and to discharge the injected gas when necessary. CONSTITUTION: A gas storage structure(100) comprises a gas storage unit(110) and an input/output control unit(120). The gas storage unit has an inner space for storing gas and has an opening. The opening connects the inner space and an outer space. The input/output control unit is installed in the opening and has a gate(122). The gas storage unit comprises a porous structure.

    Abstract translation: 目的:提供一种气体储存结构和包括该气体存储结构的气体存储装置,以便在气体储存单元中容易地注入气体并在必要时排出喷射的气体。 构成:气体存储结构(100)包括气体存储单元(110)和输入/输出控制单元(120)。 气体存储单元具有用于储存气体的内部空间并具有开口。 开口连接内部空间和外部空间。 输入/输出控制单元安装在开口中并具有门(122)。 气体存储单元包括多孔结构。

    가스 처리 장치 및 그 방법
    86.
    发明公开
    가스 처리 장치 및 그 방법 有权
    气体处理装置及其方法

    公开(公告)号:KR1020100033111A

    公开(公告)日:2010-03-29

    申请号:KR1020080092108

    申请日:2008-09-19

    CPC classification number: F17C11/005 Y02E60/321 Y02E60/324

    Abstract: PURPOSE: A gas processing device and a method thereof are provided to improve supply efficiency of gas, and to prevent safety accidents due to the gas by using a gas ionizing unit, a gas pressing unit, an ionization chamber, and a gas storing unit. CONSTITUTION: A gas processing device comprises a gas ionizing unit(110) ionizing hydrogen gas, a gas pressing unit(120), and a gas storing unit(130). The gas ionizing unit includes an ionization chamber(112) having a gas inflow and an outflow ports. The ionization chamber includes a space for ionizing the gas. A first ionization electrode is arranged on one side wall of the ionization chamber. A second ionization chamber is arranged on the other side wall of the ionization chamber.

    Abstract translation: 目的:提供一种气体处理装置及其方法,以提高气体的供应效率,并且通过使用气体离子化单元,气体压缩单元,电离室和气体存储单元来防止由气体引起的安全事故。 构成:气体处理装置包括电离氢气的气体离子化单元(110),气体压缩单元(120)和气体存储单元(130)。 气体电离单元包括具有气体流入和流出口的电离室(112)。 电离室包括用于电离气体的空间。 第一电离电极设置在电离室的一个侧壁上。 第二电离室设置在电离室的另一侧壁上。

    바이오 센서 및 그 제조 방법
    87.
    发明公开
    바이오 센서 및 그 제조 방법 无效
    生物传感器及其制造方法

    公开(公告)号:KR1020090065272A

    公开(公告)日:2009-06-22

    申请号:KR1020070132758

    申请日:2007-12-17

    Abstract: A biosensor is provided to lower operation current in sensing part of biomass lowering contact resistance between silicon nanowire and metal electrode. A biosensor comprises a silicon plate(200), source area(210), drain area(220), insulating layer(230) and silicon nano wire(240). The source area and drain area is arranged on the silicon plate. The insulating layer is arranged between source area and drain area. The silicon nano wire comprises defect area(241) and is arranged on the source area and drain area. A method for manufacturing the biosensor comprises: a step of preparing the silicon plate; a step of forming source area and drain area on the silicon plate; a step of arranging the silicon nano wire on the source area and drain area; and a step of irradiating electronic beam in one area of the silicon nano wire to form the defect area.

    Abstract translation: 提供生物传感器来降低操作电流,以感测部分生物质降低硅纳米线与金属电极之间的接触电阻。 生物传感器包括硅板(200),源区(210),漏区(220),绝缘层(230)和硅纳米线(240)。 源极区域和漏极区域布置在硅板上。 绝缘层布置在源区和漏区之间。 硅纳米线包括缺陷区(241),并且布置在源区和漏区上。 制造所述生物传感器的方法包括:制备所述硅板的步骤; 在硅板上形成源区和漏区的步骤; 将硅纳米线布置在源极区域和漏极区域上的步骤; 以及在硅纳米线的一个区域中照射电子束以形成缺陷区域的步骤。

    고감도 반도체 FET 센서 및 그 제조방법
    88.
    发明公开
    고감도 반도체 FET 센서 및 그 제조방법 失效
    高灵敏度FET传感器和FET传感器的制造方法

    公开(公告)号:KR1020090062373A

    公开(公告)日:2009-06-17

    申请号:KR1020070129581

    申请日:2007-12-13

    CPC classification number: G01N27/4145 H01L29/66818 H01L29/7853

    Abstract: A high sensitive sensor and a manufacturing method thereof are provided to obtain a high signal by controlling depletion and accumulation of a channel by combining a target material and a sensing material in both sides. An SOI(Silicon On Insulator) substrate is formed in an upper part of a semiconductor substrate. A mask pattern is formed by performing a lithography process in the upper part of the SOI substrate. The structure of a pin shape is formed by etching a silicon layer in the upper part of the SOI substrate. The sensor structure with a pin shaped structure is formed on the semiconductor substrate. A metal electrode is deposited by implanting the ion for electrical ohmic contact to the sensor structure. A sensing material combined in a target material is fixed in both sidewalls of the pin shaped structure. The path for penetrating the target material through the pin-shaped structure is formed on the sensor structure.

    Abstract translation: 提供了一种高灵敏度传感器及其制造方法,以通过在两侧组合目标材料和感测材料来控制通道的耗尽和累积来获得高信号。 在半导体衬底的上部形成SOI(绝缘体上硅)衬底。 通过在SOI衬底的上部进行光刻工艺来形成掩模图案。 针状结构通过在SOI衬底的上部蚀刻硅层而形成。 具有针状结构的传感器结构形成在半导体衬底上。 通过将用于电欧姆接触的离子注入传感器结构来沉积金属电极。 组合在目标材料中的感测材料固定在销形结构的两个侧壁中。 在传感器结构上形成穿过针状结构穿透目标材料的路径。

    반도체 나노선 센서 소자 및 이의 제조 방법
    89.
    发明公开
    반도체 나노선 센서 소자 및 이의 제조 방법 失效
    半导体纳米传感器器件及其制造方法

    公开(公告)号:KR1020090058883A

    公开(公告)日:2009-06-10

    申请号:KR1020070125679

    申请日:2007-12-05

    Abstract: A semiconductor nano wire sensor and a manufacturing method thereof are provided to implement a silicon nano wire channel of a line width with several nano meters by using a photolithographic process. A first conductive single crystal silicon line pattern is formed in the uppermost layer of an SOI(Silicon On Insulator) substrate. A second conductive channel(216b) is formed in both ends of the line width direction of the first conductive single crystal silicon line pattern. The second conductive pad is formed in both sides of the longitudinal direction of the first conductive single crystal silicon line pattern. A first electrode(242) for applying a reverse bias voltage is formed in an undoped region of the first conductive single crystal silicon line pattern. A second electrode(232) for applying the bias voltage to both sides of the second conductive channel is formed on the second conductive pad.

    Abstract translation: 提供半导体纳米线传感器及其制造方法,通过使用光刻工艺来实现具有数纳米的线宽的硅纳米线通道。 在SOI(绝缘体上硅)衬底的最上层形成第一导电单晶硅线图形。 第二导电沟道(216b)形成在第一导电单晶硅线图案的线宽方向的两端。 第二导电焊盘形成在第一导电单晶硅线图案的纵向方向的两侧。 在第一导电单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压的第一电极(242)。 在第二导电焊盘上形成用于将偏置电压施加到第二导电沟道两侧的第二电极(232)。

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