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公开(公告)号：KR1020120055211A
公开(公告)日：2012-05-31
申请号：KR1020100116816
申请日：2010-11-23
Applicant: 한국전자통신연구원
CPC classification number: B82Y40/00 , B01J20/02 , B01J20/0244 , B01J20/0248 , B01J20/0259 , B01J20/0285 , B01J20/0292 , B01J20/06 , B01J20/103 , B01J20/205 , B01J20/261 , B01J20/262 , B01J20/264 , B01J20/28007 , B01J20/3085 , B01J2220/46 , B82Y30/00
Abstract: PURPOSE: A manufacturing method of a nano wire porous media is provided to form more pores more easily, thereby more easily and simply manufacturing the nano wire porous media, and improving flexibility and durability. CONSTITUTION: A manufacturing method of a nano wire porous media comprises: a step of forming nano wire solution and polymer solution respectively; a step of forming a first mixture solution by mixing the nano wire solution and the polymer solution; a step of forming a second mixture solution including many bubbles by mixing and stirring water and organic solvent; a step of forming a third mixture solution by mixing and stirring the first and the second mixture solution; and a step of forming the nano wire porous media by freezing and drying the third mixture solution; and additionally comprises a step of surface-treating the nano wire porous media by using plasma.
Abstract translation: 目的：提供纳米线多孔介质的制造方法以更容易地形成更多的孔，从而更容易且简单地制造纳米线多孔介质，并提高柔性和耐久性。 构成：纳米线多孔介质的制造方法包括：分别形成纳米线溶液和聚合物溶液的步骤; 通过混合纳米线溶液和聚合物溶液形成第一混合溶液的步骤; 通过混合和搅拌水和有机溶剂形成包含许多气泡的第二混合溶液的步骤; 通过混合和搅拌第一和第二混合溶液形成第三混合物溶液的步骤; 以及通过冷冻和干燥第三混合物溶液形成纳米线多孔介质的步骤; 并且还包括通过使用等离子体对纳米线多孔介质进行表面处理的步骤。
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公开(公告)号：KR101120574B1
公开(公告)日：2012-03-09
申请号：KR1020080130960
申请日：2008-12-22
Applicant: 한국전자통신연구원
CPC classification number: F17C13/00 , F17C11/005 , F17C2201/06 , F17C2223/0123 , Y02E60/321 , Y02E60/324 , Y10S502/526 , Y10S977/962
Abstract: 가스저장구조체및 이가스저장구조체를포함하는가스저장장치를제공한다. 이가스저장구조체는표면에오프닝을포함하는가스저장부및 오프닝에장착되되, 게이트를갖는출입제어부를포함한다.
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公开(公告)号：KR101058369B1
公开(公告)日：2011-08-22
申请号：KR1020070127565
申请日：2007-12-10
Applicant: 한국전자통신연구원
CPC classification number: G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
Abstract: 본 발명은 나노점을 이용한 바이오 센서 및 그 제조 방법에 관한 것으로, 감지하고자 하는 타겟분자에 전하로 대전된 나노점을 결합하여 실리콘 나노선의 전기전도도가 쉽게 변화되도록 함으로써, 우수한 민감도를 갖는 바이오 센서를 저렴한 비용으로 제조할 수 있는 것을 특징으로 한다.
실리콘 나노선, 바이오 센서, 전계효과 트랜지스터, 나노점-
公开(公告)号：KR101026468B1
公开(公告)日：2011-04-01
申请号：KR1020080089237
申请日：2008-09-10
Applicant: 한국전자통신연구원
CPC classification number: G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
Abstract: FET를 이용한 생분자 검출 장치 및 검출 방법이 제공된다. 생분자 검출 장치는 기판, 상기 기판에 서로 이격되어 배치된 소오스 및 드레인 전극, 소오스 및 드레인 전극 사이의 채널 영역 및 채널 영역에 고정된 프로브 분자를 포함하는 FET, 프로브 분자가 고정된 FET의 채널 영역으로, 저이온 농도의 기준 버퍼 용액 및 타겟 분자를 포함하는 고이온 농도의 반응 용액을 선택적으로 공급하는 미세 유체 공급부 및 프로브 분자가 고정된 FET의 채널 영역에서의 제 1 전류 값과, 고이온 농도의 반응 용액에서 결합된 프로브 분자와 타겟 분자가 고정된 FET의 채널 영역에서의 제 2 전류 값을 측정하여 타겟 분자를 검출하는 생분자 검출부를 포함한다.
생분자, 이온 세기, 반응 용액, 기준 버퍼 용액, 안정화 버퍼, 전계 효과 트랜지스터-
公开(公告)号：KR1020100072529A
公开(公告)日：2010-07-01
申请号：KR1020080130960
申请日：2008-12-22
Applicant: 한국전자통신연구원
CPC classification number: F17C13/00 , F17C11/005 , F17C2201/06 , F17C2223/0123 , Y02E60/321 , Y02E60/324 , Y10S502/526 , Y10S977/962
Abstract: PURPOSE: A gas storage structure and a gas storage device including the same are provided to easily inject gas into a gas storage unit and to discharge the injected gas when necessary. CONSTITUTION: A gas storage structure(100) comprises a gas storage unit(110) and an input/output control unit(120). The gas storage unit has an inner space for storing gas and has an opening. The opening connects the inner space and an outer space. The input/output control unit is installed in the opening and has a gate(122). The gas storage unit comprises a porous structure.
Abstract translation: 目的：提供一种气体储存结构和包括该气体存储结构的气体存储装置，以便在气体储存单元中容易地注入气体并在必要时排出喷射的气体。 构成：气体存储结构（100）包括气体存储单元（110）和输入/输出控制单元（120）。 气体存储单元具有用于储存气体的内部空间并具有开口。 开口连接内部空间和外部空间。 输入/输出控制单元安装在开口中并具有门（122）。 气体存储单元包括多孔结构。
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Patent Agency Ranking
公开(公告)号：KR1020100033111A
公开(公告)日：2010-03-29
申请号：KR1020080092108
申请日：2008-09-19
Applicant: 한국전자통신연구원
CPC classification number: F17C11/005 , Y02E60/321 , Y02E60/324
Abstract: PURPOSE: A gas processing device and a method thereof are provided to improve supply efficiency of gas, and to prevent safety accidents due to the gas by using a gas ionizing unit, a gas pressing unit, an ionization chamber, and a gas storing unit. CONSTITUTION: A gas processing device comprises a gas ionizing unit(110) ionizing hydrogen gas, a gas pressing unit(120), and a gas storing unit(130). The gas ionizing unit includes an ionization chamber(112) having a gas inflow and an outflow ports. The ionization chamber includes a space for ionizing the gas. A first ionization electrode is arranged on one side wall of the ionization chamber. A second ionization chamber is arranged on the other side wall of the ionization chamber.
Abstract translation: 目的：提供一种气体处理装置及其方法，以提高气体的供应效率，并且通过使用气体离子化单元，气体压缩单元，电离室和气体存储单元来防止由气体引起的安全事故。 构成：气体处理装置包括电离氢气的气体离子化单元（110），气体压缩单元（120）和气体存储单元（130）。 气体电离单元包括具有气体流入和流出口的电离室（112）。 电离室包括用于电离气体的空间。 第一电离电极设置在电离室的一个侧壁上。 第二电离室设置在电离室的另一侧壁上。
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公开(公告)号：KR1020090065272A
公开(公告)日：2009-06-22
申请号：KR1020070132758
申请日：2007-12-17
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963 , G01N33/48 , G01N23/00
Abstract: A biosensor is provided to lower operation current in sensing part of biomass lowering contact resistance between silicon nanowire and metal electrode. A biosensor comprises a silicon plate(200), source area(210), drain area(220), insulating layer(230) and silicon nano wire(240). The source area and drain area is arranged on the silicon plate. The insulating layer is arranged between source area and drain area. The silicon nano wire comprises defect area(241) and is arranged on the source area and drain area. A method for manufacturing the biosensor comprises: a step of preparing the silicon plate; a step of forming source area and drain area on the silicon plate; a step of arranging the silicon nano wire on the source area and drain area; and a step of irradiating electronic beam in one area of the silicon nano wire to form the defect area.
Abstract translation: 提供生物传感器来降低操作电流，以感测部分生物质降低硅纳米线与金属电极之间的接触电阻。 生物传感器包括硅板（200），源区（210），漏区（220），绝缘层（230）和硅纳米线（240）。 源极区域和漏极区域布置在硅板上。 绝缘层布置在源区和漏区之间。 硅纳米线包括缺陷区（241），并且布置在源区和漏区上。 制造所述生物传感器的方法包括：制备所述硅板的步骤; 在硅板上形成源区和漏区的步骤; 将硅纳米线布置在源极区域和漏极区域上的步骤; 以及在硅纳米线的一个区域中照射电子束以形成缺陷区域的步骤。
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公开(公告)号：KR1020090062373A
公开(公告)日：2009-06-17
申请号：KR1020070129581
申请日：2007-12-13
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/78
CPC classification number: G01N27/4145 , H01L29/66818 , H01L29/7853
Abstract: A high sensitive sensor and a manufacturing method thereof are provided to obtain a high signal by controlling depletion and accumulation of a channel by combining a target material and a sensing material in both sides. An SOI(Silicon On Insulator) substrate is formed in an upper part of a semiconductor substrate. A mask pattern is formed by performing a lithography process in the upper part of the SOI substrate. The structure of a pin shape is formed by etching a silicon layer in the upper part of the SOI substrate. The sensor structure with a pin shaped structure is formed on the semiconductor substrate. A metal electrode is deposited by implanting the ion for electrical ohmic contact to the sensor structure. A sensing material combined in a target material is fixed in both sidewalls of the pin shaped structure. The path for penetrating the target material through the pin-shaped structure is formed on the sensor structure.
Abstract translation: 提供了一种高灵敏度传感器及其制造方法，以通过在两侧组合目标材料和感测材料来控制通道的耗尽和累积来获得高信号。 在半导体衬底的上部形成SOI（绝缘体上硅）衬底。 通过在SOI衬底的上部进行光刻工艺来形成掩模图案。 针状结构通过在SOI衬底的上部蚀刻硅层而形成。 具有针状结构的传感器结构形成在半导体衬底上。 通过将用于电欧姆接触的离子注入传感器结构来沉积金属电极。 组合在目标材料中的感测材料固定在销形结构的两个侧壁中。 在传感器结构上形成穿过针状结构穿透目标材料的路径。
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公开(公告)号：KR1020090058883A
公开(公告)日：2009-06-10
申请号：KR1020070125679
申请日：2007-12-05
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
Abstract: A semiconductor nano wire sensor and a manufacturing method thereof are provided to implement a silicon nano wire channel of a line width with several nano meters by using a photolithographic process. A first conductive single crystal silicon line pattern is formed in the uppermost layer of an SOI(Silicon On Insulator) substrate. A second conductive channel(216b) is formed in both ends of the line width direction of the first conductive single crystal silicon line pattern. The second conductive pad is formed in both sides of the longitudinal direction of the first conductive single crystal silicon line pattern. A first electrode(242) for applying a reverse bias voltage is formed in an undoped region of the first conductive single crystal silicon line pattern. A second electrode(232) for applying the bias voltage to both sides of the second conductive channel is formed on the second conductive pad.
Abstract translation: 提供半导体纳米线传感器及其制造方法，通过使用光刻工艺来实现具有数纳米的线宽的硅纳米线通道。 在SOI（绝缘体上硅）衬底的最上层形成第一导电单晶硅线图形。 第二导电沟道（216b）形成在第一导电单晶硅线图案的线宽方向的两端。 第二导电焊盘形成在第一导电单晶硅线图案的纵向方向的两侧。 在第一导电单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压的第一电极（242）。 在第二导电焊盘上形成用于将偏置电压施加到第二导电沟道两侧的第二电极（232）。
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公开(公告)号：KR1020090056165A
公开(公告)日：2009-06-03
申请号：KR1020070123199
申请日：2007-11-30
Applicant: 한국전자통신연구원
CPC classification number: B01J20/28007 , B01D53/02 , B01D2253/112 , B01D2253/34 , B01D2256/16 , B01J20/02 , B01J20/0214 , B01J20/0233 , B01J20/0237 , B01J20/024 , B01J20/0244 , B01J20/0248 , B01J20/0251 , B01J20/0259 , B01J20/0262 , B01J20/0285 , B01J20/0288 , B01J20/06 , B01J20/08 , B01J20/261 , B01J20/262 , B01J20/28052 , B01J20/3225 , B01J20/3248 , B01J20/3257 , B01J2220/46 , B82Y30/00 , B82Y40/00 , C01B3/001 , C01B3/0015 , C01B3/0084 , Y02E60/328
Abstract: A gas adsorption medium and an adsorption pump apparatus having the same are provided to recycle adsorbents and to improve effectiveness of gas adsorption capacity. A gas adsorption medium(110) has multi-layered structure with a material(120) having a variable ion value in which extra electronics which do not participate in a bond, is included. The material having the variable ion value and a separable material are combined between each layer. Each layer is made of the same materials or different materials. A gap of each layer is 0.1 ~ 100 nm. The material having the variable ion value has asymmetrical structure in which two or more structures are connected mutually. The material having the variable ion value is nanowire crystalline.
Abstract translation: 提供了一种气体吸附介质和具有该气体吸附介质的吸附泵装置以循环吸附剂并提高气体吸附能力的有效性。 气体吸附介质（110）具有多层结构，其中包括具有可变离子值的材料（120），其中不参与粘结的额外的电子元件。 具有可变离子值的材料和可分离材料在每层之间组合。 每层由相同的材料或不同的材料制成。 每层的间隙为0.1〜100nm。 具有可变离子值的材料具有不对称结构，其中两个或更多个结构相互连接。 具有可变离子值的材料是纳米线结晶。
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