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81.发明公开
公开(公告)号：KR1020100048576A
公开(公告)日：2010-05-11
申请号：KR1020080107801
申请日：2008-10-31
IPC: C08L33/00 , C08K5/16 , H01L29/786
CPC classification number: H01L51/0558 , C08F8/30 , C08F2810/20 , H01L51/004 , H01L51/0541 , H01L51/0545 , H01L51/052 , C08F220/14 , C08F220/30
Abstract: PURPOSE: A composition for organic thin film transistor is provided to form organic insulating film having excellent solvent resistance, durability, and insulating property. CONSTITUTION: A composition for organic thin film transistor comprises a material of chemical formula I or II and cross linking agent having a maleimide group. In chemical formula I or II, R' and R" are separately hydrogen atom, hydroxy group, ester group, amide group, or alkyl group or alkoxy group of 1-12 carbon atoms.
Abstract translation: 目的：提供用于有机薄膜晶体管的组合物，以形成具有优异的耐溶剂性，耐久性和绝缘性的有机绝缘膜。 构成：用于有机薄膜晶体管的组合物包括化学式I或II的材料和具有马来酰亚胺基团的交联剂。 在化学式I或II中，R'和R“分别是氢原子，羟基，酯基，酰胺基或1-12个碳原子的烷基或烷氧基。
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公开(公告)号：KR1020100019853A
公开(公告)日：2010-02-19
申请号：KR1020080078593
申请日：2008-08-11
Applicant: 한국전자통신연구원
IPC: H01L51/00 , H01L29/786
CPC classification number: H01L51/0004 , H01L51/0027 , H01L51/0036 , H01L51/0545 , H01L51/0558 , H01L51/0007
Abstract: PURPOSE: A method for locally crystallizing organic thin film and a method for improving organic thin film transistor using the same are provided to locally improve the crystallinity of an organic layer by performing thermal process. CONSTITUTION: An organic layer(150) is formed on a substrate(110). An organic solvent(S) is applied on a specific area(150a) for improving crystallinity. The organic solvent gradually is evaporated. The movement of particles of the organic layer is activated in the area spread by the organic solvent. The crystallinity of the area spread by the organic solvent is locally improved through self-alignment.
Abstract translation: 目的：提供局部结晶有机薄膜的方法和使用其的改进有机薄膜晶体管的方法，以通过进行热处理来局部地提高有机层的结晶度。 构成：在衬底（110）上形成有机层（150）。 将有机溶剂（S）施加在特定区域（150a）上以改善结晶度。 有机溶剂逐渐蒸发。 有机层的颗粒的移动在有机溶剂扩散的区域中被活化。 由有机溶剂扩散的区域的结晶度通过自对准而局部地改善。
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公开(公告)号：KR100817215B1
公开(公告)日：2008-03-27
申请号：KR1020060119863
申请日：2006-11-30
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L51/055 , H01L51/0021 , H01L51/0023 , H01L51/105
Abstract: A self-aligned organic FET(field effect transistor) is provided to reduce parasitic capacitance by using a photosensitive polymer thin film as a gate electrode and by preventing a gate electrode from overlapping a source/drain electrode. A gate electrode is formed on a substrate(201) by using a photosensitive polymer thin film. A gate insulation layer(203) is formed on the substrate and the gate electrode. A source electrode(206) and a drain electrode(207) are formed on the gate insulation layer at both sides of a channel region in a manner that doesn't overlap the gate electrode. An organic semiconductor layer is formed on the gate insulation layer in the channel region. The gate insulation layer can be made of an organic or inorganic material with transparency. A transparent electrode can be used as the source electrode and the drain electrode.
Abstract translation: 提供了自对准的有机FET（场效应晶体管），通过使用光敏聚合物薄膜作为栅电极并防止栅电极与源/漏电极重叠来减小寄生电容。 通过使用感光性聚合物薄膜，在基板（201）上形成栅电极。 在基板和栅电极上形成栅极绝缘层（203）。 源极电极（206）和漏电极（207）以不与栅电极重叠的方式形成在沟道区两侧的栅极绝缘层上。 在沟道区域的栅极绝缘层上形成有机半导体层。 栅极绝缘层可以由具有透明性的有机或无机材料制成。 可以使用透明电极作为源电极和漏电极。
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公开(公告)号：KR100704377B1
公开(公告)日：2007-04-09
申请号：KR1020050119011
申请日：2005-12-07
Applicant: 한국전자통신연구원
Abstract: 본 발명은 굴절률이 다른 두개의 산화막으로 구성된 절연막을 갖는 평판표시장치 및 그 제조방법에 관한 것이다. 본 평판표시장치는 기판 상에 형성되는 복수의 절연막; 상기 복수의 절연막 중 하나를 사이에 두고 적층되는 반도체층, 게이트 전극, 및 소스/드레인 전극을 포함하는 박막 트랜지스터; 상기 소스/드레인 전극 상에 형성되는 평탄화막; 제1 전극, 발광층 및 제2 전극을 구비하며 상기 평탄화막 상에 형성되는 발광소자를 포함하며, 상기 복수의 절연막 중 적어도 하나는 굴절률이 다른 두 개이상의 산화막으로 이루어진다. 이에, 굴절률이 다른 산화막으로 구성된 절연막에 의해, 외부에서 유입되는 빛 반사를 방지하여 콘트라스트가 저하되는 것을 방지할 수 있다.
산화막, 절연막, 굴절률Abstract translation: 本发明涉及一种平板显示装置和具有氧化膜的其他两个的折射率构成的绝缘膜及其制造方法。 平板显示器包括形成在基板上的多个绝缘膜; 包括半导体层，栅电极，和源/漏电极的薄膜晶体管被置于所述多个绝缘膜中的一个之间层叠; 形成在源极/漏极上的平坦化层; 的第一电极，发光层，并且包括第二电极，包括形成在平坦化层，两个以上的不同的氧化膜的折射率的形成有多个绝缘膜中的至少一个上的发光元件。 因此，可以通过由具有不同折射率的氧化物膜构成的绝缘膜来防止从外部引入的光的反射，并且可以防止对比度降低。
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公开(公告)号：KR1020170082181A
公开(公告)日：2017-07-14
申请号：KR1020160001010
申请日：2016-01-05
Applicant: 한국전자통신연구원
Abstract: 기판상에금속환원제를포함하는제 1 용액을도포하여버퍼층을형성하는것, 상기버퍼층상에제 2 용액을도포하는것, 및상기제 2 용액이도포된상기버퍼층상에건조공정을수행하는것을포함하는도전패턴의형성방법을제공하되, 상기금속환원제는제 1 금속을포함하고, 상기제 2 용액은상기제 1 금속과다른제 2 금속의이온을포함하고, 상기건조공정동안상기제 2 금속이온이환원되어상기버퍼층의내부및 표면에금속층이형성될수 있다.
Abstract translation: 该方法包括：将包含金属还原剂的第一溶液施加在基板上以形成缓冲层;在缓冲层上施加第二溶液;以及对施加了第二溶液的缓冲层执行干燥处理 提供形成导电图案的方法，其中所述金属还原剂包含第一金属且所述第二溶液包含不同于所述第一金属的第二金属的离子， 金属层可以形成在缓冲层的内部和表面上。
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Patent Agency Ranking
公开(公告)号：KR1020160103242A
公开(公告)日：2016-09-01
申请号：KR1020150025358
申请日：2015-02-23
Applicant: 한국전자통신연구원
IPC: G02F1/1333 , G02F1/1339 , G02F1/1343
CPC classification number: G02F1/133308 , G02F2001/133317 , G02F2001/133616 , G02F2201/44 , G02F1/1339 , G02F1/1343 , G02F2001/133342
Abstract: 표시장치및 이를제조하는방법을제공한다. 표시장치는, 하부표시소자와, 제1 상부전극, 발광부, 제2 상부전극및 보호부가순차적으로적층된상부표시소자와, 하부및 상부표시소자들로구동신호를전달하는중간부를포함하되, 보호부는상부표시소자의적어도일부를덮는다.
Abstract translation: 提供了显示装置及其制造方法。 显示装置包括：下显示元件; 依次层叠有第一上电极，发光单元，第二上电极和保护单元的上显示元件; 以及构造成将驱动信号传送到下部和上部显示元件的中间单元。 保护单元覆盖上部显示元件的至少一部分。 因此，可以提高显示装置的图像质量。
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公开(公告)号：KR1020150138913A
公开(公告)日：2015-12-11
申请号：KR1020140065804
申请日：2014-05-30
Applicant: 한국전자통신연구원
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: 본발명의실시예들에따른전자장치의제조방법은소자영역및 배선영역을포함하는캐리어기판을제공하는것; 캐리어기판상에희생층및 전자소자를차례로형성하는것; 희생층상에배선영역에서굴곡진표면을갖는제1탄성층을형성하는것; 배선영역의제1탄성층상에금속배선들을형성하는것; 제1탄성층상에금속배선들을덮는제2탄성층을형성하는것; 전자소자상의제2탄성층에함몰되며, 굴곡진표면을갖는고강성패턴을형성하는것; 제2탄성층및 고강성패턴상에제3탄성층을형성하는것; 및캐리어기판을분리하는것을포함한다.
Abstract translation: 根据本发明的实施例，提供了一种用于制造电子设备的方法。 该方法包括：制备包括元件区域和布线区域的载体衬底; 依次在载体基板上形成牺牲层和电子元件; 在所述牺牲层的所述布线区域中形成具有波纹状表面的第一弹性层; 在布线区域的第一弹性层上形成金属布线; 形成覆盖所述第一弹性层上的所述金属配线的第二弹性层; 在所述电子元件上方的所述第二弹性层的凹部中形成具有波纹状表面的高刚性图案; 在第二弹性层上形成第三弹性层和高刚性图案; 并分离载体衬底。
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公开(公告)号：KR1020150138512A
公开(公告)日：2015-12-10
申请号：KR1020140065202
申请日：2014-05-29
Applicant: 한국전자통신연구원
IPC: H01L27/32 , H01L29/786
CPC classification number: H01L27/1266 , H01L29/78603 , H01L51/0097
Abstract: 본발명은신축성전자소자의제조방법을개시한다. 그의방법은, 복수개의트렌치들을갖는몰드기판을제공하는단계와, 상기몰드기판상에상기트렌치들깊이에대응되는단차를갖는신축성기판을형성하는단계와, 상기몰드기판을제거하는단계와, 상기신축성기판상에박막트랜지스터를형성하는단계를포함한다. 상기신축성기판은, 상기몰드기판의상기트렌치들내에서형성되는하드영역과, 상기트렌치들사이의상기몰드기판상에형성되는유연영역을포함할수 있다.
Abstract translation: 公开了一种制造可拉伸电子装置的方法。 该方法包括：提供具有沟槽的模具基板的步骤; 形成具有与模具基板上的沟槽的深度对应的台阶的伸缩性电子基板的工序; 去除模具基板的步骤; 以及在所述伸缩性基板上形成薄膜晶体管的工序。 可拉伸基板可以包括形成在模具基板的沟槽中的硬区域和在沟槽之间形成在模具基板上的柔性区域。
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公开(公告)号：KR1020130130609A
公开(公告)日：2013-12-02
申请号：KR1020120127618
申请日：2012-11-12
Applicant: 한국전자통신연구원
CPC classification number: H01L27/3225 , H01L27/3232
Abstract: In the present invention, disclosed are a dual mode display device and a manufacturing method thereof. The dual mode display device includes a bottom substrate, a top substrate which faces the bottom substrate, a thin film transistor part which is formed between the top substrate and the bottom substrate, a first anode which is formed on one side of the thin film transistor part, a first cathode which is formed between the first anode and the top substrate, an organic light emitting layer which is formed between the first cathode and the first anode, a second anode which is formed on the other side of the thin film transistor part, a second cathode which is formed between the second anode and the top substrate or between the second anode and the bottom substrate, and an optical switching layer which is formed between the second cathode and the second anode.
Abstract translation: 在本发明中，公开了双模显示装置及其制造方法。 双模式显示装置包括底部基板，面向底部基板的顶部基板，形成在顶部基板和底部基板之间的薄膜晶体管部分，形成在薄膜晶体管的一侧上的第一阳极 形成在第一阳极和顶部基板之间的第一阴极，形成在第一阴极和第一阳极之间的有机发光层，形成在薄膜晶体管部分的另一侧上的第二阳极; 形成在第二阳极和顶部衬底之间或第二阳极和底部衬底之间的第二阴极以及形成在第二阴极和第二阳极之间的光学开关层。
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公开(公告)号：KR1020130081545A
公开(公告)日：2013-07-17
申请号：KR1020120002580
申请日：2012-01-09
Applicant: 한국전자통신연구원 , 울산대학교 산학협력단
Abstract: PURPOSE: A method for fabricating graphene is provided to cost-effectively fabricate a high quality of graphene by simply fabricating a graphite interlayer compound. CONSTITUTION: A method for fabricating graphene comprises the steps of: preparing an inserting material containing at least one alkaline metal or alkaline earth metal; preparing a graphite generating material; forming a mixture by mixing the inserting material and the graphite generating material (S110); forming a graphite interlayer compound by thermally treating the mixture (S120); and exfoliating graphene from the graphite interlayer compound (S130). The graphite generating material further contains a sacrificial graphite generating material. [Reference numerals] (S110) Form a mixture by mixing an inserting material containing at least one alkaline metal or alkaline earth metal and a graphite generating material; (S120) Form a graphite interlayer compound by thermally treating the mixture; (S130) Exfoliate graphene from the graphite interlayer compound; (S140) Centrifuge and filter the exfoliated graphene
Abstract translation: 目的：提供一种制造石墨烯的方法，通过简单地制造石墨夹层化合物来成本有效地制造高质量的石墨烯。 构成：制造石墨烯的方法包括以下步骤：制备含有至少一种碱金属或碱土金属的插入材料; 制备石墨发生材料; 通过混合插入材料和石墨生成材料形成混合物（S110）; 通过热处理混合物形成石墨层间化合物（S120）; 和从石墨层间化合物剥离石墨烯（S130）。 石墨发生材料还包含牺牲石墨生成材料。 （S110）通过混合含有至少一种碱金属或碱土金属的插入材料和石墨生成材料来形成混合物; （S120）通过热处理混合物形成石墨层间化合物; （S130）从石墨夹层化合物剥离石墨烯; （S140）离心并过滤脱落的石墨烯
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