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    MULTIJUNCTION SOLAR CELL
    81.
    发明申请
    MULTIJUNCTION SOLAR CELL 审中-公开
    多功能太阳能电池

    公开(公告)号：WO03009395A3

    公开(公告)日：2003-09-18

    申请号：PCT/US0214366

    申请日：2002-05-06

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT W ,  FREEBURG THOMAS ,  PRENDERGAST JAMES E ,  OOMS WILLIAM J ,  DROOPAD RAVINDRANATH ,  RAMDANI JAMAL

    IPC: H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/068

    CPC classification number: H01L31/0693 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

    Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions (302, 304).

    Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池结的单片集成（302,304）。

    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME
    82.
    发明申请
    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME 审中-公开
    一体化辐射发射系统及其制造方法

    公开(公告)号：WO0209148A3

    公开(公告)日：2003-07-31

    申请号：PCT/US0122543

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： FOLEY BARBARA M ,  OOMS WILLIAM JAY ,  PRENDERGAST JAMES E ,  EISENBEISER KURT ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L33/00 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32 ,  G02B6/12

    CPC classification number: H01L33/30 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L33/0066 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/183 ,  H01S5/3201

    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radiation systems, including radiation sources such as light emitting diode or lasers and wave guides may be formed in the high quality epitaxial compound semiconductor material and above the oxide layers.

    Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 可以在高质量的外延化合物半导体材料中和氧化物层之上形成辐射系统，包括诸如发光二极管或激光器和波导的辐射源。

    SEMICONDUCTOR COMPLIANT SUBSTRATE HAVING A GRADED MONOCRYSTALLINE LAYER
    83.
    发明申请
    SEMICONDUCTOR COMPLIANT SUBSTRATE HAVING A GRADED MONOCRYSTALLINE LAYER 审中-公开
    具有分级单晶层的半导体合格衬底

    公开(公告)号：WO0250345A3

    公开(公告)日：2003-03-20

    申请号：PCT/US0143744

    申请日：2001-11-19

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  HILT LYNDEE L

    IPC: H01L21/205 ,  H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/02 ,  C30B25/02 ,  C30B25/20 ,  C30B29/32

    CPC classification number: H01L21/02381 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  Y10T29/41

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer (32), in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

    Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长成覆盖单晶衬底（22），例如大的硅晶片。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层（24）。 容纳缓冲层是通过氧化硅的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 然后在容纳缓冲层上形成晶格常数随着层的厚度变化的单晶梯度层（32），使得渐变层的顶部的晶格常数基本上与随后的晶格常数匹配 生长单晶膜。

    SEMICONDUCTOR STRUCTURES AND DEVICES UTILIZING A COMPLIANT SUBSTRATE
    87.
    发明申请
    SEMICONDUCTOR STRUCTURES AND DEVICES UTILIZING A COMPLIANT SUBSTRATE 审中-公开
    半导体结构和器件利用合适的衬底

    公开(公告)号：WO02093619A2

    公开(公告)日：2002-11-21

    申请号：PCT/US0150496

    申请日：2001-12-20

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  DEMKOV ALEXANDER A ,  HILT LYNDEE L

    IPC: H01L21/205 ,  C30B25/18 ,  H01L21/20 ,  H01L21/36 ,  H01L

    CPC classification number: C30B25/18 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254

    Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

    Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层（24）。 容纳缓冲层是通过氧化硅的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层（26）晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

    III-V NITRIDE DEVICES HAVING A COMPLIANT SUBSTRATE
    88.
    发明申请
    III-V NITRIDE DEVICES HAVING A COMPLIANT SUBSTRATE 审中-公开
    具有合适基材的III-V氮化物

    公开(公告)号：WO02054468A2

    公开(公告)日：2002-07-11

    申请号：PCT/US0146991

    申请日：2001-12-06

    Applicant: MOTOROLA INC

    Inventor： HILT LYNDEE L ,  RAMDANI JAMAL

    IPC: C30B29/38 ,  H01L21/20 ,  H01L31/12

    CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02639 ,  H01L21/02647

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (202) on a silicon substrate (200). The accommodating buffer layer (202) is a layer of monocrystalline material spaced apart from the silicon substrate (200) by an amorphous interface layer (204) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of semiconductor structures formed by high quality Group III-V nitride films.

    Abstract translation: 通过首先在硅衬底（200）上生长容纳缓冲层（202），可以将高质量的单晶材料外延层生长在大的硅晶片上。 容纳缓冲层（202）是通过氧化硅的非晶界面层（204）与硅衬底（200）间隔开的单晶材料层。 非晶界面层消耗应变并允许高质量单晶容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 利用这种技术允许制造由高质量III-V族氮化物膜形成的半导体结构。

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