公开(公告)号：DE112004002809A5

公开(公告)日：2007-05-24

申请号：DE112004002809

申请日：2004-04-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  KAISER STEPHAN ,  HAERLE VOLKER

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

公开(公告)号：DE10218498B4

公开(公告)日：2007-02-22

申请号：DE10218498

申请日：2002-04-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BADER STEFAN ,  HAERLE VOLKER ,  MILLER STEPHAN ,  WEIMAR ANDREAS ,  LELL ALFRED

IPC: H01L21/205 ,  H01L21/033 ,  H01L21/20 ,  H01L21/762 ,  H01L21/78 ,  H01L33/00

公开(公告)号：DE102005025416A1

公开(公告)日：2006-12-14

申请号：DE102005025416

申请日：2005-06-02

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  HAERLE VOLKER ,  OBERSCHMID RAIMUND ,  HAHN BERTHOLD ,  WEIMAR ANDREAS

IPC: H01L33/38

公开(公告)号：DE112004001619D2

公开(公告)日：2006-08-10

申请号：DE112004001619

申请日：2004-06-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRUEDERL GEORG ,  HAHN BERTHOLD ,  HAERLE VOLKER

IPC: H01L21/762 ,  H01L21/78 ,  H01L33/00

Abstract: Method for production of semiconductor chips, especially radiation emitting chips, including at least one epitaxially produced stack of semiconductor chips, involves preparation of an epitaxially produced growth substrate, the semiconductor wafer (SW), formation of a separation layer parallel to a main (100) surface of the SW, connection of the SW to an auxiliary support wafer (2), and separation of an opposite section of the SW, relative to a separation area, from wafer (2). An epitaxial growth surface is formed on section (12) of the epitaxial growth support surface remaining on wafer (2) for subsequent epitaxial growth of the semiconductor layer sequence. A semiconductor layer sequence (5) is grown on the epitaxial growth surface, with deposition of a chip substrate wafer on the semiconductor layer sequence, wafer (2) is separated, and the composite semiconductor layer sequence and chip substrate wafer (7) are divided into individually separated semiconductor chips.

公开(公告)号：DE102004036962A1

公开(公告)日：2006-03-23

申请号：DE102004036962

申请日：2004-07-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KAISER STEPHAN ,  HAERLE VOLKER ,  HAHN BERTHOLD ,  PLOESL ANDREAS

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/62

Abstract: A production process for a thin-film semiconductor chip comprises forming an emitting active layer sequence (2) on a growth substrate followed by a reflective electrically conductive contact layer (4) and structuring to form stacks (21). A conductive film (6) is applied to the contact layer and the substrate removed. An independent claim is also included for the chip produced as above.

公开(公告)号：DE10261672B4

公开(公告)日：2005-11-24

申请号：DE10261672

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/00

公开(公告)号：DE102005003460A1

公开(公告)日：2005-10-13

申请号：DE102005003460

申请日：2005-01-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEIMAR ANDREAS ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  BAUR JOHANNES ,  OBERSCHMID RAIMUND

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: The device has an active layer (7) that emits electromagnetic radiation (19) in a main radiation direction (15), a current dispersion layer (9) of a first nitride compound semiconductor material, a main surface (14) for coupling out the radiation emitted in the main radiation direction and a first contact layer (11,12) arranged on the main surface. The transverse conductivity of the current dispersion layer is increased by forming a two-dimensional electron or hole gas.

公开(公告)号：DE102004030603A1

公开(公告)日：2005-02-10

申请号：DE102004030603

申请日：2004-06-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  BRUEDERL GEORG ,  HAERLE VOLKER

IPC: H01L21/762 ,  H01L21/78 ,  H01L33/00 ,  H01L21/20 ,  H01L21/58

Abstract: Method for production of semiconductor chips, especially radiation emitting chips, including at least one epitaxially produced stack of semiconductor chips, involves preparation of an epitaxially produced growth substrate, the semiconductor wafer (SW), formation of a separation layer parallel to a main (100) surface of the SW, connection of the SW to an auxiliary support wafer (2), and separation of an opposite section of the SW, relative to a separation area, from wafer (2). An epitaxial growth surface is formed on section (12) of the epitaxial growth support surface remaining on wafer (2) for subsequent epitaxial growth of the semiconductor layer sequence. A semiconductor layer sequence (5) is grown on the epitaxial growth surface, with deposition of a chip substrate wafer on the semiconductor layer sequence, wafer (2) is separated, and the composite semiconductor layer sequence and chip substrate wafer (7) are divided into individually separated semiconductor chips.

公开(公告)号：DE102004002446A1

公开(公告)日：2004-09-09

申请号：DE102004002446

申请日：2004-01-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  HAHN BERTHOLD

IPC: G02F1/1333 ,  G02F1/1345 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H05B44/00 ,  H01L51/20 ,  H01L51/10 ,  H05B33/08

Abstract: Indicator device with a first array of individual indicator elements, e.g. pixels (12), a second array of control transistors (14) for the indicator elements (12), where the control transistors (14) are made from a semiconductor material with a band gap increased so that it is transparent in the visible spectral region. An independent claim - is included for a process for production of the device involving deposition of a thin layer of semiconductor material of increased band gap, especially on a glass support, processing of this for acceptance the control transistors, deposition of an amorphous light emitting material, especially for OLRD, on the transistors, and formation of the indicator elements.

公开(公告)号：DE10320160A1

公开(公告)日：2004-08-26

申请号：DE10320160

申请日：2003-05-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  LUGAUER HANS-JUERGEN ,  BADER STEFAN ,  MILLER STEPHAN

IPC: H01L21/20 ,  H01L33/00 ,  H01L25/075 ,  H01L31/18

Abstract: Production of a number of semiconductor bodies comprises forming a mask layer (3) on the substrate (1) or on an initial layer (2) having windows (4) to the substrate, back-etching the substrate and the initial layer to form trenches, growing semiconductor material (5) on the substrate or on the initial layer, and growing a component layer sequence (8) on the semiconductor material.