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公开(公告)号：DE10155442A1
公开(公告)日：2003-05-28
申请号：DE10155442
申请日：2001-11-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STRAUS UWE , HAHN BERTHOLD , BRUEDERL GEORG , LUGAUER HANS-JUERGEN , HAERLE VOLKER , WEIMAR ANDREAS
IPC: H01S5/042 , H01L21/285 , H01L21/363 , H01L29/20 , H01L29/45 , H01L33/14 , H01L33/32 , H01L33/40 , H01L21/283
Abstract: The invention relates to an ohmic contact structure comprising a metallisation layer (14) which is arranged on a semiconductor material (10). A contact layer is formed in the semiconductor material (10, said contact layer comprising a first partial region which is adjacent to the metallisation layer (14) and a second partial region (18) following the first partial region. The contact layer is doped in such a way that the doping concentration (N 2 ) in the first partial region (12) is higher than the doping concentration (N 1 ) in the second partial region (18).
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公开(公告)号：DE10032246A1
公开(公告)日：2002-01-17
申请号：DE10032246
申请日：2000-07-03
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BAUR JOHANNES , STRAUSS UWE , BRUEDERL GEORG , HAHN BERTHOLD , HAERLE VOLKER
Abstract: The invention relates to a light-emitting diode chip (1), comprising a series of epitaxial layers (3) arranged on a substrate (2), which are equipped with an InGaN-based active structure (4) that emits radiation. A buffer layer (20) is provided between the substrate (2) and the active structure (4). The material or materials of the buffer layer (20) are selected in such a way that their epitaxial surface (6) is untensioned or slightly tensioned for the epitaxy of the active structure (4) at the epitaxial temperature(s). The active structure (4) has zones (5) rich in In that are arranged laterally adjacent to one another in relation to the epitaxial plane. The In content in said zones is greater than in the other zones of the active structure (4). The invention also relates to a preferred method for producing the chips.
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公开(公告)号：DE102006043400A1
公开(公告)日：2008-03-27
申请号：DE102006043400
申请日：2006-09-15
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ALBRECHT TONY , BRUEDERL GEORG , HAERLE VOLKER , HOEPPEL LUTZ , STRASBURG MARTIN
Abstract: The optoelectronic semiconductor chip has a growth substrate (1) with a structured growth surface, which has multiple projections (4) and hollows (3). An active series of deposits (5) are applied on the growth surface. The surface area of the active series of deposits is larger than the area of the lateral cross section (Q) of the growth substrate. The growth substrate consists of gallium nitride, silicon carbide, sapphire, indium gallium nitride, indium aluminum gallium nitride nad zinc oxide.
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公开(公告)号：DE10242360A1
公开(公告)日：2004-04-01
申请号：DE10242360
申请日：2002-09-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BRUEDERL GEORG , BAUR JOHANNES , STATH NORBERT , FEHRER MICHAEL , HAHN BERTHOLD
IPC: H01L31/0352 , H01L33/06 , H01L33/28 , H01L33/32 , H01L31/101 , H01L31/0264 , H01L33/00
Abstract: Optoelectronic semiconductor chip comprises an active layer (4) between delimiting layers (2, 3, 5, 6) for optical and/or electrical confinement in the material system of ZnSe or GaN. A superlattice made from a periodic sequence of thin layers of at least three mixed crystal compositions is formed in at least one of the layers.
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5.发明申请METHOD FOR THERMAL TREATMENT OF THE SURFACE LAYER OF A SEMICONDUCTOR BY MEANS OF A PULSED LASER 审中-公开方法用于半导体的表面处理用激光脉冲的AID热处理
公开(公告)号：WO03019637A3
公开(公告)日：2003-10-02
申请号：PCT/DE0202981
申请日：2002-08-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , BAUR JOHANNES , BRUEDERL GEORG , LELL ALFRED , NEU WALTER , OBERSCHMID RAIMUND
Inventor： BAUR JOHANNES , BRUEDERL GEORG , LELL ALFRED , NEU WALTER , OBERSCHMID RAIMUND
IPC: H01L21/28 , H01L21/268 , H01L21/324 , B23K26/00 , H01L21/225 , H01L29/45 , H01L33/00
CPC classification number: H01L21/3245 , H01L21/268
Abstract: The invention relates to a method for heat treating a surface layer (4) on a semiconductor substrate (5). Laser pulses (2), generated by a laser (1), are delivered to the surface layer (4). Said method permits, in particular, ohmic contacts to III-V compound semiconductors to be produced.
Abstract translation: 本发明涉及一种用于在半导体衬底（5）上的表面层（4）的热处理方法。 被排出到表面层（4）的激光脉冲（2），其由一激光器（1）中产生。 根据该方法，特别是欧姆接触到III-V族化合物半导体可以制造。
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Patent Agency Ranking
公开(公告)号：DE10203393B4
公开(公告)日：2010-06-02
申请号：DE10203393
申请日：2002-01-29
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： FEHRER MICHAEL , HAHN BERTHOLD , BAUR JOHANNES , BRUEDERL GEORG , HAERLE VOLKER , LUGAUER HANS-JUERGEN , STATH NORBERT , BADER STEFAN
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公开(公告)号：DE102004062290A1
公开(公告)日：2006-07-06
申请号：DE102004062290
申请日：2004-12-23
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAERLE VOLKER , BRUEDERL GEORG
IPC: H01L33/00
Abstract: The method involves making a substrate with an epitaxial functional semiconductor layer sequence (2). The substrate (1) has a separation zone (4) provided by ion implantation, where the ion implantation follows epitaxial growth into the substrate (1) and takes place via the functional semiconductor layer sequence (2). A carrier substrate (6) is applied on the functional semiconductor layer sequence (2). The separation zone (4) is separated from the carrier substrate (6). The substrate (1) and the functional semiconductor layer sequence (2) have the same grating space.
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公开(公告)号：DE10244447B4
公开(公告)日：2006-06-14
申请号：DE10244447
申请日：2002-09-24
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BRUEDERL GEORG , LELL ALFRED , EISERT DOMINIK , LUGAUER HANS-JUERGEN , BAUR JOHANNES , STRAUS UWE , KAISER STEPHAN
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公开(公告)号：DE10244447A1
公开(公告)日：2004-04-01
申请号：DE10244447
申请日：2002-09-24
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BRUEDERL GEORG , LELL ALFRED , EISERT DOMINIK , LUGAUER HANS-JUERGEN , BAUR JOHANNES , STRAUS UWE , KAISER STEPHAN
Abstract: Production of a radiation-emitting semiconductor component comprises preparing a substrate (10), applying a first reflector layer (12) on the substrate, applying a semiconductor layer sequence (14) based on GaN and consisting of an active layer (20), a lower casing layer (16) and an upper casing layer (18) on the reflector layer, and applying a second reflector layer (30) on the upper casing layer. A structure is formed in the lateral direction of the component in contact with the upper casing layer of the layer sequence. The structure has regions with a contact layer made from a metal having good electrical properties. An Independent claim is also included for a radiation-emitting semiconductor component produced by the above process.
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公开(公告)号：WO03043092A3
公开(公告)日：2003-10-02
申请号：PCT/DE0204178
申请日：2002-11-12
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , BRUEDERL GEORG , HAHN BERTHOLD , HAERLE VOLKER , LUGAUER HANS-JUERGEN , STRAUSS UWE , WEIMAR ANDREAS
Inventor： BRUEDERL GEORG , HAHN BERTHOLD , HAERLE VOLKER , LUGAUER HANS-JUERGEN , STRAUSS UWE , WEIMAR ANDREAS
IPC: H01S5/042 , H01L21/285 , H01L21/363 , H01L29/20 , H01L29/45 , H01L33/14 , H01L33/32 , H01L33/40 , H01L21/28 , H01L33/00
CPC classification number: H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/325 , H01L33/40
Abstract: The invention relates to an ohmic contact structure comprising a metallisation layer (14) which is arranged on a semiconductor material (10). A contact layer is formed in the semiconductor material (10, said contact layer comprising a first partial region which is adjacent to the metallisation layer (14) and a second partial region (18) following the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is higher than the doping concentration (N1) in the second partial region (18).
Abstract translation: 本发明涉及一种具有设置在半导体材料（10），金属化（14）的欧姆接触结构，其中在所述半导体材料在相邻的（10）形成的接触层的金属镀层（14）的第一部分中的一个和所述第一 包括所述第二部分（18）的下游部分区域。 接触层被掺杂为所述第一部分（12）比所述掺杂浓度的掺杂浓度（N 2）（N 1）是在所述第二部分（18）。
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