公开(公告)号：EP3038126A1

公开(公告)日：2016-06-29

申请号：EP14307128.0

申请日：2014-12-22

Applicant: DelfMEMS SAS

Inventor： Rollier, Anne-Sophie ,  Bonnabel, Antoine ,  Segueni, Karim

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/0051 ,  B81B2201/018 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/013 ,  H01H49/00 ,  H01H2059/0027 ,  H01H2059/0036 ,  H01H2227/004

Abstract: The present invention relates to a method of manufacturing an MEMS device that comprises the steps of forming a first membrane layer over a sacrificial base layer, forming a second membrane layer over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer and forming stoppers to restrict movement of the first membrane layer. Moreover, it is provided MEMS device comprising a movable membrane comprising a first membrane layer and a second membrane layer formed over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer.

Abstract translation: 本发明涉及一种制造MEMS器件的方法，该方法包括以下步骤：在牺牲基底层上形成第一膜层，在第一膜层上形成第二膜层，其中第二膜层包括侧向凹槽， 的第一膜层并形成止挡件以限制第一膜层的运动。 此外，提供了包括可移动膜的MEMS装置，该可移动膜包括形成在第一膜层上的第一膜层和第二膜层，其中第二膜层包括暴露第一膜层的侧向部分的侧向凹部。

公开(公告)号：EP2988883A1

公开(公告)日：2016-03-02

申请号：EP14756616.0

申请日：2014-02-27

Applicant: Texas Instruments Incorporated

Inventor： JOHNSON, Peter, B. ,  WYGANT, Ira, Oaktree

IPC: B06B1/02

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，其包括单晶材料的第一基板，其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧，以及贯穿基板通孔 TSV）延伸第一基板的整个厚度。 TSV由单晶材料形成，通过单晶材料中的隔离区电隔离，并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上，以在微机电系统（MEMS）空腔上提供可移动膜。 金属层在顶侧基板接触区域之上并且在可移动膜上方，包括顶侧基板接触区域与可动膜的耦合。

公开(公告)号：EP3214037A4

公开(公告)日：2018-05-30

申请号：EP15762910

申请日：2015-04-15

Applicant: BOE TECHNOLOGY GROUP CO LTD

Inventor： JI CHUNYAN ,  YANG TIAN

IPC: B81C1/00 ,  H01L41/00

CPC classification number: B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C14/0605 ,  C23C14/0617 ,  C23C14/14 ,  C23C14/34 ,  F24J2/5203 ,  F24J2/5258 ,  F24J2002/5215 ,  F24J2002/5226 ,  F24J2002/5284 ,  F24S25/30 ,  F24S25/636 ,  F24S2025/016 ,  F24S2025/801 ,  F24S2025/807 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  Y02E10/47 ,  Y02E10/50

Abstract: The present invention relates to the field of sensor manufacturing technology, particularly disloses a method for manufacturing a micro-sensor body, compriseing the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present invention, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.

公开(公告)号：EP3315935A2

公开(公告)日：2018-05-02

申请号：EP17198026.1

申请日：2017-10-24

Applicant: Rosemount Aerospace Inc.

Inventor： POTASEK, David P.

IPC: G01L9/00 ,  G01L19/14

CPC classification number: B81C3/001 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0172 ,  G01L9/0042 ,  G01L19/148

Abstract: A MEMS device with electronics integration places integrated circuit components on a topping wafer (120A) of a sensing die to conserve space, minimize errors and reduce cost of the device as a whole. The topping wafer is bonded to a sensing wafer (118) and secured in a housing (138).

Abstract translation: 具有电子集成的MEMS器件将集成电路组件放置在感测芯片的顶部晶片（120A）上以节省空间，最小化错误并降低器件整体的成本。 顶部晶片结合到感测晶片（118）并固定在壳体（138）中。

公开(公告)号：EP3249952A4

公开(公告)日：2018-02-28

申请号：EP15894016

申请日：2015-12-14

Applicant: GOERTEK INC

Inventor： SUN YANMEI

IPC: H04R19/04 ,  H04R19/00 ,  H04R31/00

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C2201/0105 ,  B81C2201/013 ,  G01L7/08 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.

公开(公告)号：EP3176557A1

公开(公告)日：2017-06-07

申请号：EP16198301.0

申请日：2016-11-10

Applicant: Honeywell International Inc.

Inventor： BROWN, Gregory C.

IPC: G01L19/06 ,  G01L9/00

CPC classification number: B81B3/0051 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/0118 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055 ,  G01L19/0618

Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

Abstract translation: 的压力传感器，所述组件包括具有第一表面，第一表面上的止动结构，以及耦合到所述第一表面上的膜片构造的基底基板。 该膜结构体包括具有空腔部，其包括第一腔和围绕所述第一空腔的第二腔的第一侧; 具有第一厚度和通过所述第一腔体限定的压力感测膜片部; 和在超压膜片部分具有第二厚度和第二腔，所述第二厚度比所述第一厚度更大的限定。 当在过压的应用，至少一些所述压力传感膜片部分的面积被偏转并通过止挡结构支撑。 作为过压增加时，超压隔膜部偏转并接合与所述第一表面的搜索没有被偏转，并通过止动结构支撑的压力传感膜片部分的附加区域。

公开(公告)号：EP3074800A1

公开(公告)日：2016-10-05

申请号：EP14866509.4

申请日：2014-11-25

Applicant: Inphenix, Inc.

Inventor： KAMAL, Mohammad ,  LI, Tongning ,  EU, David ,  QI, Qinian

IPC: G02B5/28 ,  B81B3/00

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Abstract translation: 提供了使用基于微机电系统（MEMS）的法布里 - 珀罗（FP）滤波器空腔调谐的波长可调增益介质作为可调激光器。 该系统包括用于波长选择的激光腔和滤光腔。 激光腔由增益介质组成，例如半导体光放大器（SOA），两个准直透镜和端反射器。 MEMS-FP滤光器腔包括固定反射器和可由静电力控制的可移动反射器。 通过移动MEMS反射器，可以通过改变FP滤光器腔长度来调节波长。 MEMS FP滤波器腔位移可以通过阶梯电压离散地调节，或者通过使用连续的驱动电压连续地进行调节。 连续调谐的驱动频率可以是谐振频率或MEMS结构的任何其他频率，并且调谐范围可以覆盖不同的调谐范围，例如30nm，40nm和大于100nm。

公开(公告)号：EP2898519A1

公开(公告)日：2015-07-29

申请号：EP13839408.5

申请日：2013-09-20

Applicant: Wispry, Inc.

Inventor： MORRIS, Arthur, S. ,  DEREUS, Dana ,  BAYTAN, Norito

IPC: H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/0016 ,  B81B3/0051 ,  B81B2201/0221 ,  B81C1/00166 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/013 ,  H01G5/18 ,  H01G7/00

Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

Abstract translation: 用于微机电系统（MEMS）可调电容器的系统，装置和方法可以包括附接到基板的固定致动电极，附接到基板的固定电容电极和位于基板上方的可移动部件， 固定的致动电极和固定的电容电极。 可移动部件可以包括位于固定致动电极上方的可动致动电极和位于固定电容电极上方的可动电容电极。 可移动电容电极的至少一部分可以通过第一间隙与固定电容电极间隔开，并且可移动致动电极可以通过比第一间隙大的第二间隙与固定的致动电极间隔开。

公开(公告)号：EP2281299B1

公开(公告)日：2014-12-10

申请号：EP09721942.2

申请日：2009-03-03

Applicant: Micron Technology, Inc.

Inventor： MILLWARD, Dan, B. ,  QUICK, Timothy

IPC: H01L21/033 ,  B81C1/00 ,  B82Y30/00

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

公开(公告)号：EP2656961A1

公开(公告)日：2013-10-30

申请号：EP12744669.8

申请日：2012-02-01

Applicant: Fujikura Ltd. ,  The University of Tokyo

Inventor： NUKAGA Osamu ,  YAMAMOTO Satoshi ,  TABATA Kazuhito ,  SUGIYAMA Masakazu

IPC: B23K26/36 ,  B23K26/00 ,  B23K26/04 ,  B23K26/40 ,  B81C99/00 ,  C03C15/00 ,  C03C23/00

CPC classification number: B81C1/00547 ,  B23K26/0054 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

Abstract translation: 一种制造具有微孔的基体的方法包括：通过用具有脉冲持续时间的第一激光的焦点在基体上进行扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 以及通过蚀刻去除第一改质区域和第三改质区域而形成微孔。