Abstract:
A transmission electron microscope in which a sample is positioned in a sample plane 9b comprises an objective lens 11b, a first projection lens system 61b having plural lenses, a second projection lens 63b system having plural lenses, and an analyzing system.The sample plane 9b is imaged into an intermediate image plane 71, a diffraction plane 15b of the objective lens 11b is imaged into an intermediate diffraction plane 67b, and either a) the intermediate image plane is imaged into an entrance image plane of the analyzing system and the intermediate diffraction plane is imaged into an entrance pupil plane of the analyzing system, or b) the intermediate image plane 71 is imaged into the entrance pupil plane 65b and the intermediate diffraction plane 67b is imaged into the entrance image plane 21b.
Abstract:
In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
Abstract:
An apparatus for transmission of energy of an ion to at least one gas particle and/or for transportation of an ion and a particle beam device having an apparatus such as this are disclosed. In particular, a container is provided, in which a gas is arranged which has gas particles, wherein the container has a transport axis. Furthermore, at least one first multipole unit and at least one second multipole unit are provided, which are arranged along the transport axis. The first multipole unit and the second multipole unit are formed by printed circuit boards. Furthermore, an electronic circuit is provided, which provides each multipole unit with a potential, such that a potential gradient is generated, in particular along the transport axis.
Abstract:
An apparatus for manipulating the trajectories of moving charged particles. The apparatus includes a grid of laterally spaced side by side elongate elements and means defining a path for charged particles to traverse the grid. The grid is supported and configured for application of a voltage gradient between and/or along the elongate elements, whereby to manipulate the trajectories of charged particles that traverse the grid. A method of manipulating the trajectories of moving charged particles is also disclosed.
Abstract:
An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.
Abstract:
A spherical aberration correction decelerating lens corrects a spherical aberration occurring in an electron beam or an ion beam (hereinafter, referred to as “beam”) emitted from a predetermined object plane position with a certain divergence angle, and said spherical aberration correction decelerating lens comprises at least two electrodes, each of which is constituted of a surface of a solid of revolution whose central axis coincides with an optical axis and each of which receives an intentionally set voltage applied by an external power supply, wherein at least one of the electrodes includes one or more meshes (M) which has a concaved shape opposite to an object plane (P0) and which is constituted of a surface of a solid of revolution so that a central axis of the concaved shape coincides with the optical axis, and a voltage applied to each of the electrodes causes the beam to be decelerated and causes formation of a decelerating convergence field for correcting the spherical aberration occurring in the beam. This makes it possible to provide a spherical aberration correction decelerating lens which converges a beam, emitted from the sample and having high energy and a large divergence angle, onto an image plane.
Abstract:
An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.
Abstract:
A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.
Abstract:
A method and a device for determining the distance from the sample to be examined to at least one reference point which function independently of the type of sample. A signal is modulated to a first potential of a sample and a primary particle beam is directed at the sample, resulting in a secondary particle beam being formed by an interaction, the particles of this beam having the modulated signal. The particles of the secondary particle beam and the signal modulated to the potential of the particles of the secondary particle beam are detected. By comparing the detected modulated signal to a reference signal, the distance is determined from the relationship between the reference signal and the detected modulated signal. The device has the corresponding components for implementing the method.
Abstract:
A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.