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    METHOD OF REDUCING PARTICLE CONTAMINATION FOR ION IMPLANTERS
    1.
    发明申请
    METHOD OF REDUCING PARTICLE CONTAMINATION FOR ION IMPLANTERS 审中-公开
    减少离子植入物颗粒污染的方法

    公开(公告)号：WO2008085405A1

    公开(公告)日：2008-07-17

    申请号：PCT/US2007/026150

    申请日：2007-12-20

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  YONGZHANG, Huang ,  WEIGUO, Que ,  JINCHENG, Zhang

    Inventor： YONGZHANG, Huang ,  WEIGUO, Que ,  JINCHENG, Zhang

    IPC: H01J37/08 ,  H01J37/248 ,  H01J37/302

    CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

    Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

    Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在开始离子注入之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

    Beam tuning with automatic magnet pole rotation for ion implanters
    2.
    发明授权
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US07476855B2

    公开(公告)日：2009-01-13

    申请号：US11523144

    申请日：2006-09-19

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: H01J37/137 ,  H01J37/30 ,  H01J49/20 ,  H01J49/30 ,  H01J37/304

    CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Beam tuning with automatic magnet pole rotation for ion implanters
    3.
    发明申请
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US20080067435A1

    公开(公告)日：2008-03-20

    申请号：US11523144

    申请日：2006-09-19

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: H01J37/317 ,  H01J49/20 ,  H01J49/30

    CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Extraction electrode system for high current ion implanter
    7.
    发明授权
    Extraction electrode system for high current ion implanter 有权
    高电流离子注入机提取电极系统

    公开(公告)号：US07915597B2

    公开(公告)日：2011-03-29

    申请号：US12050594

    申请日：2008-03-18

    Applicant: Yongzhang Huang ,  Ilya Pokidov

    Inventor： Yongzhang Huang ,  Ilya Pokidov

    IPC: H01J3/14

    CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

    Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

    Abstract translation: 一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间 组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
    8.
    发明申请
    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION 有权
    低污染，低能量束流建筑用于高电流离子植入

    公开(公告)号：US20090267001A1

    公开(公告)日：2009-10-29

    申请号：US12108890

    申请日：2008-04-24

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: G21K5/10

    CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3007 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/24528

    Abstract: An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

    Abstract translation: 一种离子注入系统，包括沿光束路径产生离子束的离子源，离子源下游的质量分析器组件，其对离子束执行质量分析和角度校正;分辨孔径电极，包括至少一个电极 所述质量分析器部件并且沿着所述光束路径具有根据所选择的质量分辨率和光束包络的尺寸和形状;在所述分辨孔径电极下游的偏转元件改变离开偏转元件的离子束的路径;减速电极 在偏转元件的下游，使离子束减速，在终端站内的支撑平台，用于保持和定位植入有带电离子的工件，并且其中终端站逆时针安装大约八度，使得偏转的离子束垂直 到工件。

    EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER
    9.
    发明申请
    EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER 有权
    用于高电流离子植入物的提取电极系统

    公开(公告)号：US20090236547A1

    公开(公告)日：2009-09-24

    申请号：US12050594

    申请日：2008-03-18

    Applicant: Yongzhang Huang ,  Ilya Pokidov

    Inventor： Yongzhang Huang ,  Ilya Pokidov

    IPC: H01J37/08

    CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

    Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

    Abstract translation: 一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间 组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

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