公开(公告)号：US07867842B2

公开(公告)日：2011-01-11

申请号：US12181852

申请日：2008-07-29

Applicant: Peter Alfred Gruber ,  Paul Alfred Lauro ,  Jae-Woong Nah

Inventor： Peter Alfred Gruber ,  Paul Alfred Lauro ,  Jae-Woong Nah

IPC: H01L21/8242

CPC classification number: B23K1/0016 ,  H01L21/4853 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/1183 ,  H01L2224/1184 ,  H01L2224/11848 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/81192 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T428/24612 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method for forming alloy deposits at selected areas on a receiving substrate includes the steps of: providing an alloy carrier including at least a first decal including a first plurality of openings and a second decal including a second plurality of openings, the first and second decals being arranged such that each of the first plurality of openings is in alignment with a corresponding one of the second plurality of openings; filling the first and second plurality of openings with molten alloy; cooling the molten alloy to thereby form at least first and second plugs, the first plug having a first surface and a second surface substantially parallel to one another, the second plug having a third surface and a fourth surface substantially parallel to one another; removing at least one of the first and second decals to at least partially expose the first and second plugs; aligning the alloy carrier with the receiving substrate so that the first and second plugs correspond to the selected areas on the receiving substrate; and transferring the first plug to a first of the selected areas and the second plug to a second of the selected areas.

公开(公告)号：US20100025863A1

公开(公告)日：2010-02-04

申请号：US12510650

申请日：2009-07-28

Applicant: Peter Alfred Gruber ,  Jae-Woong Nah

Inventor： Peter Alfred Gruber ,  Jae-Woong Nah

IPC: H01L23/50

CPC classification number: H01L23/49894 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/81192 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00

Abstract: Techniques for interconnecting an IC chip and a receiving substrate are provided. A method includes the steps of: providing the IC chip, the IC chip including at least a first connection site formed thereon; providing the receiving substrate, the receiving substrate including at least a second connection site formed thereon; forming an alloy structure on at least a portion of an upper surface of the second connection site; orienting the IC chip relative to the receiving substrate so that the at least first connection site is aligned with the alloy deposit formed on the at least second connection site; and forming an electrical connection between the first and second connection sites, the electrical connection comprising a volume of electrically conductive fusible material, wherein a majority of the volume of electrically conductive fusible material is supplied from the alloy structure.

Abstract translation: 提供了用于互连IC芯片和接收基板的技术。 一种方法包括以下步骤：提供IC芯片，IC芯片至少包括形成在其上的第一连接部位; 提供接收基板，所述接收基板至少包括形成在其上的第二连接部位; 在所述第二连接部位的上表面的至少一部分上形成合金结构; 使所述IC芯片相对于所述接收基板定向，使得所述至少第一连接部位与形成在所述至少第二连接部位上的所述合金沉积物对准; 以及在所述第一和第二连接部位之间形成电连接，所述电连接包括一定体积的导电性易熔材料，其中大部分体积的导电性易熔材料从所述合金结构供给。

公开(公告)号：US06390439B1

公开(公告)日：2002-05-21

申请号：US09287370

申请日：1999-04-07

Applicant: Steven A. Cordes ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  James Louis Speidell ,  Joseph Peter Zinter

Inventor： Steven A. Cordes ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  James Louis Speidell ,  Joseph Peter Zinter

IPC: B29C3300

CPC classification number: B23K3/0623 ,  B23K3/0638 ,  B23K2101/40 ,  H05K3/3457 ,  Y10T156/10

Abstract: Hybrid molds for molding a multiplicity of solder balls for use in a molten solder screening process and methods for preparing such molds are disclosed. A method for forming the multiplicity of cavities in a pyramidal shape by anisotropically etching a crystalline silicon substrate along a specific crystallographic plane is utilized to form a crystalline silicon face plate used in the present invention hybrid mold. In a preferred embodiment, a silicon face plate is bonded to a borosilicate glass backing plate by adhesive means in a method that ensures coplanarity is achieved between the top surfaces of the silicon face plate and the glass backing plate. In an alternate embodiment, an additional glass frame is used for bonding a silicon face plate to a glass backing plate, again with ensured coplanarity between the top surfaces of the silicon face plate and the glass frame. In a second alternate embodiment, a silicon face plate is encased in an extender material which may be borosilicate glass or a polymer. The encasing is performed on a leveling fixture such that the top surface of the silicon face plate and the top surface of the extender material after solidification are perfectly leveled.

公开(公告)号：US6056191A

公开(公告)日：2000-05-02

申请号：US70121

申请日：1998-04-30

Applicant: Guy Paul Brouillette ,  Peter Alfred Gruber ,  Frederic Maurer

Inventor： Guy Paul Brouillette ,  Peter Alfred Gruber ,  Frederic Maurer

IPC: B23K3/06 ,  H01L21/60 ,  H05K3/34 ,  B23K3/00

CPC classification number: H05K3/3457 ,  B23K3/0623 ,  H01L24/11 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K2203/0113

Abstract: The present invention discloses a method and apparatus for forming solder bumps by a molten solder screening technique in which a flexible die head constructed of a metal sheet is utilized for maintaining an intimate contact between the die head and a solder receiving mold surface. The flexible die head, when used in combination with a pressure means, is capable of conforming to any curved mold surface as long as the curvature is not more than 2.5 .mu.m per inch of die length. The present invention further provides a method and apparatus for filling a multiplicity of cavities in a mold surface by providing a stream of molten solder and then intimately contacting the surface of the molten solder with a multiplicity of cavities such that the molten solder readily fills the cavities. The apparatus further provides means for removing excess molten solder from the surface of the mold without disturbing the molten solder already filled in the cavities. The present invention further discloses a flexible die for dispensing molten solder consisting of a die body that is constructed of a metal sheet capable of flexing of not less than 1.5 .mu.m per inch of die length, a gate opening for receiving a supply of molten solder, a slot opening for dispensing the molten solder onto a solder receiving surface, and a pressure means associated with the die body for providing adequate pressure such that the die body intimately contacting the solder receiving mold surface.

Abstract translation: 本发明公开了一种通过熔融焊料筛选技术形成焊料凸块的方法和装置，其中使用由金属板构成的柔性模头来保持模头和焊料接收模具表面之间的紧密接触。 当与压力装置组合使用时，柔性模头能够符合任何弯曲的模具表面，只要曲率不超过每英寸模头长度2.5微米。 本发明还提供了一种用于通过提供熔融焊料流来填充模具表面中的多个空腔并随后使熔融焊料的表面与多个空腔紧密接触的方法和装置，使得熔融焊料容易地填充空腔 。 该装置还提供了用于从模具表面去除多余的熔融焊料而不干扰已经填充在空腔中的熔融焊料的装置。 本发明还公开了一种用于分配熔融焊料的柔性模具，其由由能够弯曲不小于每英寸模头长度1.5μm的金属板构成的模具本体构成，用于接收熔融焊料供应的门开口 ，用于将熔融焊料分配到焊料接收表面上的槽口，以及与模具本体相关联的压力装置，用于提供足够的压力，使得模具体与焊料接收模具表面紧密接触。

公开(公告)号：US6003757A

公开(公告)日：1999-12-21

申请号：US70120

申请日：1998-04-30

Applicant: Guy Daniel Beaumont ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber

Inventor： Guy Daniel Beaumont ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber

IPC: B23K3/06 ,  H01L21/00 ,  H01L21/60 ,  H05K3/34 ,  B23K3/00 ,  B23K31/02

CPC classification number: H05K3/3468 ,  B23K3/0623 ,  H01L21/67092 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/128

Abstract: An apparatus and a method for transferring solder bumps from a solder mold to a solder-receiving substrate are disclosed. The apparatus includes a transfer fixture constructed by a base member, a lid member and a compressible member for holding a mold/substrate assembly therein. A plurality of compression pins are mounted through the lid member for supplying a uniform pressure on the mold/substrate assembly and for allowing lateral motion of the mold/substrate assembly relative to the transfer fixture due to a mismatch in the coefficients of thermal expansion. The compressible member is a cellulosic foam sheet which applies a uniform joining force across the entire surface of a wafer and assures abutting contact between the entire wafer and the mold surface. The foam sheet further assists in the lateral movement of the mold/substrate assembly relative to the base member of the transfer fixture.

Abstract translation: 公开了一种用于将焊料凸起从焊料转移到焊料接收衬底的装置和方法。 该装置包括由基座构件，盖构件和用于将模具/基板组件保持在其中的可压缩构件构成的转移夹具。 通过盖构件安装多个压缩销，以在模具/基板组件上提供均匀的压力，并且由于热膨胀系数的不匹配而允许模具/衬底组件相对于转移夹具的横向运动。 可压缩构件是纤维素泡沫片材，其在晶片的整个表面上施加均匀的接合力，并确保整个晶片和模具表面之间的邻接接触。 泡沫片材还有助于模具/基材组件相对于转印夹具的基底部件的横向移动。

公开(公告)号：US07906420B2

公开(公告)日：2011-03-15

申请号：US12627249

申请日：2009-11-30

Applicant: Peter Alfred Gruber ,  Paul Alfred Lauro ,  Jae-Woong Nah

Inventor： Peter Alfred Gruber ,  Paul Alfred Lauro ,  Jae-Woong Nah

IPC: H01L21/44

CPC classification number: B23K1/0016 ,  H01L21/4853 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/1183 ,  H01L2224/1184 ,  H01L2224/11848 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/81192 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T428/24612 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method for forming alloy deposits at selected areas on a receiving substrate includes the steps of: providing an alloy carrier including at least a first decal including a first plurality of openings and a second decal including a second plurality of openings, the first and second decals being arranged such that each of the first plurality of openings is in alignment with a corresponding one of the second plurality of openings; filling the first and second plurality of openings with molten alloy; cooling the molten alloy to thereby form at least first and second plugs, the first plug having a first surface and a second surface substantially parallel to one another, the second plug having a third surface and a fourth surface substantially parallel to one another; removing at least one of the first and second decals to at least partially expose the first and second plugs; aligning the alloy carrier with the receiving substrate so that the first and second plugs correspond to the selected areas on the receiving substrate; and transferring the first plug to a first of the selected areas and the second plug to a second of the selected areas.

Abstract translation: 一种用于在接收基板上的选定区域形成合金沉积物的方法包括以下步骤：提供合金载体，其包括至少包括第一多个开口的第一贴花和包括第二多个开口的第二贴花，第一和第二贴花 被布置成使得所述第一多个开口中的每一个与所述第二多个开口中的对应的一个开口对准; 用熔融合金填充第一和第二多个开口; 冷却所述熔融合金，从而形成至少第一和第二塞子，所述第一塞子具有基本上彼此平行的第一表面和第二表面，所述第二塞子具有基本上彼此平行的第三表面和第四表面; 去除所述第一和第二贴花中的至少一个以至少部分地暴露所述第一和第二插塞; 将合金载体与接收基板对准，使得第一和第二插塞对应于接收基板上的选定区域; 以及将所述第一插头转移到所选择的区域中的第一个，并且将所述第二插头转移到所选择的区域中的第二个。

公开(公告)号：US20100086739A1

公开(公告)日：2010-04-08

申请号：US12244067

申请日：2008-10-02

Applicant: Russell A. Budd ,  Bing Dang ,  William S. Graham ,  Peter Alfred Gruber ,  Richard Levine ,  Da-Yuan Shih

Inventor： Russell A. Budd ,  Bing Dang ,  William S. Graham ,  Peter Alfred Gruber ,  Richard Levine ,  Da-Yuan Shih

IPC: B32B3/12 ,  B23K31/02

CPC classification number: B23K1/0016 ,  B23K1/20 ,  B23K26/364 ,  B23K2101/40 ,  H05K1/111 ,  H05K3/3457 ,  H05K2201/09381 ,  H05K2201/0969 ,  H05K2201/09745 ,  H05K2203/043 ,  Y02P70/611 ,  Y10T428/24479

Abstract: A microcavity structure is provided. The structure comprises a cavity layout that enables centering of reflowed solder at each of one or more interconnect locations and protrusion of the reflowed solder sufficiently from the cavity to facilitate wetting. Techniques are also provided for producing a microcavity structure, for using injection molded solder (IMS) for micro bumping, as well as for using injection molded solder (IMS) for three-dimensional (3D) packaging.

Abstract translation: 提供微腔结构。 该结构包括空腔布局，其能够使一个或多个互连位置中的每一个处的回流焊料居中并且使回流焊料从空腔充分突出以促进润湿。 还提供了用于制造微腔结构的技术，用于使用用于微型凸起的注射成型焊料（IMS）以及用于三维（3D）封装的注射成型焊料（IMS）。

公开(公告)号：US06708872B2

公开(公告)日：2004-03-23

申请号：US10107985

申请日：2002-03-27

Applicant: Peter Alfred Gruber ,  Chon Cheong Lei

Inventor： Peter Alfred Gruber ,  Chon Cheong Lei

IPC: B23K3102

CPC classification number: B23K3/0638 ,  B23K2101/42 ,  H05K3/3468 ,  H05K2201/10424 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/043 ,  H05K2203/128

Abstract: There is provided a method for applying solder to an element on a surface of a substrate. The method comprises the steps of (a) placing a mold over the surface, where the mold includes a conduit that contains the solder, and (b) heating the solder to a molten state so that the solder flows from the conduit onto the element. The conduit enjoys two degrees of horizontal freedom with respect to the surface such that the conduit becomes substantially aligned with the element when the solder is in the molten state. There is also provided a system for applying solder to an element on a surface of a substrate.

Abstract translation: 提供了将焊料施加到基板表面上的元件的方法。 该方法包括以下步骤：（a）将模具放置在表面上，其中模具包括含有焊料的导管，和（b）将焊料加热至熔融状态，使得焊料从导管流到元件上。 导管相对于表面具有两度的水平自由度，使得当焊料处于熔融状态时，导管变得基本上与元件对齐。 还提供了一种用于将焊料施加到衬底表面上的元件的系统。

公开(公告)号：US06452117B2

公开(公告)日：2002-09-17

申请号：US09871555

申请日：2001-05-31

Applicant: Brian Eugene Curcio ,  Peter Alfred Gruber ,  Frederic Maurer ,  Konstantinos I. Papathomas ,  Mark David Poliks

Inventor： Brian Eugene Curcio ,  Peter Alfred Gruber ,  Frederic Maurer ,  Konstantinos I. Papathomas ,  Mark David Poliks

IPC: H01R1204

CPC classification number: H05K3/4069 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49833 ,  H01L2924/0002 ,  H05K3/0094 ,  H05K3/246 ,  H05K3/4602 ,  H05K2201/0305 ,  H05K2201/0347 ,  H05K2201/09509 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/096 ,  H05K2201/09827 ,  H05K2201/09863 ,  H05K2203/0126 ,  H05K2203/085 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/53191 ,  H01L2924/00

Abstract: High aspect ratio (5:1-30:1) and small (5 &mgr;m-125 &mgr;m) diameter holes in a dielectric substrate are provided, which are filled with a solidified conductive material, as well as a method of filling such holes using pressure and vacuum. In certain embodiments, the holes are lined with conductive material and/or capped with a conductive material. The invention also contemplates a chip carrier formed by such material.

Abstract translation: 提供介电基片中的高纵横比（5：1-30：1）和小（5毫米-125毫米）直径的孔，填充有凝固的导电材料，以及使用压力填充这些孔的方法 和真空。 在某些实施例中，孔用导电材料衬里和/或用导电材料封盖。 本发明还考虑由这种材料形成的芯片载体。

公开(公告)号：US06340630B1

公开(公告)日：2002-01-22

申请号：US09536557

申请日：2000-03-28

Applicant: Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

Inventor： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

IPC: A01L2144

CPC classification number: H01L24/81 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H05K3/3436 ,  H05K3/3463 ,  H05K3/3468 ,  H05K3/3478 ,  H05K2201/0379 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05647

Abstract: A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip. The aligned mold/wafer assembly is then passed through a reflow furnace to effect the transfer of the low melting temperature solder in the mold cavities onto the tip of the high melting temperature solder bumps on the wafer. A dual metallurgical composition bump is thereby formed by the two different solder alloys.

Abstract translation: 可以在能够以低处理温度结合到另一电子设备的电子设备上形成互连的方法可以通过在形成突起的电子设备上沉积第一互连材料，然后沉积第二互连材料至少部分覆盖 所述突起，其中所述第二互连材料具有比所述第一互连材料低的流动温度。 该方法通过将熔融焊料流入具有微腔的模具中以填充空腔，然后使其固化来进行。 然后将模具与包含沉积有高熔点温度焊料凸块的芯片的硅晶片对准，使得模具的每个微腔与芯片上的每个高熔点温度焊料凸块对准。 然后将对准的模具/晶片组件通过回流炉，以将模腔中的低熔点焊料转移到晶片上的高熔点温度焊料凸块的尖端上。 由此由两种不同的焊料合金形成双金属组合物凸块。