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公开(公告)号：KR100754537B1
公开(公告)日：2007-09-04
申请号：KR1020047001496
申请日：2002-08-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/4557 , C23C16/14 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/45521 , C23C16/45523 , C23C16/45565 , C23C16/45572 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
Abstract: 가스 처리 장치(1)는 처리 가스를 사용하여 웨이퍼(W)에 처리를 실시하는 처리 용기(2)와, 상기 처리 용기(2)내에 배치되어, 웨이퍼(W)가 재치되는 재치대(5)와, 상기 재치대(5)상의 웨이퍼(W)에 대응하여 설치되어, 상기 처리 용기(2)내로 처리 가스를 토출하는 샤워 헤드(shower head)(22)와, 상기 처리 용기(2)내를 배기하는 배기 수단(132)을 구비하고, 상기 샤워 헤드(22)는, 상기 재치대(5)에 재치된 웨이퍼(W)에 대응하여 설치된 제 1 가스 토출 구멍(46)과, 상기 제 1 가스 토출 구멍(46)과는 별개로, 상기 제 1 가스 토출 구멍(46)의 주위에 설치되어, 상기 재치대(5)상의 웨이퍼(W)의 주변부에 처리 가스를 토출하는 제 2 가스 토출 구멍(47)을 갖는다. 그리고, 기판에 대하여 가스를 균일하게 공급하여 균일한 가스 처리를 실시할 수 있다.
Abstract translation: 气体处理装置1具备：使用处理气体对晶圆W进行处理的处理容器2;配置在处理容器2内并载置晶圆W的载置台5;与晶圆W对应配置的喷头22 将处理气体向处理容器2内排出的处理气体排出装置132和对处理容器2内进行排气的排气装置132.喷头22具有与载置于载置台上的晶片W对应配置的第一气体排出孔46 以及独立地布置在第一气体排放孔46周围的第二气体排放孔47，以将处理气体排放到晶片W的周边部分。因此，通过均匀地向基板供应气体，可以执行均匀的气体处理 。 ＆lt;图像＆GT;
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公开(公告)号：KR100741180B1
公开(公告)日：2007-07-19
申请号：KR1020077002763
申请日：2002-08-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/4557 , C23C16/14 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/45521 , C23C16/45523 , C23C16/45565 , C23C16/45572 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
Abstract: A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.
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公开(公告)号：KR101408506B1
公开(公告)日：2014-06-17
申请号：KR1020120133521
申请日：2012-11-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/285 , C23C16/34 , H01L21/318
Abstract: (과제) 적어도 챔버 밖에 있어서는, SiH
2 Cl
2 가스가 다른 처리 가스와 혼합되지 않도록 하고, 이들 가스의 반응 부생성물에 의한 파티클의 발생을 억제한다.
(해결 수단) 챔버(102)에 마련되고, 복수의 가스 도입구로부터 도입된 가스를 웨이퍼 W를 향해 토출하는 복수의 토출 구멍을 구비한 샤워 헤드와, NH
3 가스를 샤워 헤드의 가스 도입구까지 공급하는 NH
3 공급 라인(210A)과, SiH
2 Cl
2 가스를 샤워 헤드의 가스 도입구까지 공급하는 SiH
2 Cl
2 공급 라인(210B)과, TiCl
4 가스를 샤워 헤드의 가스 도입구까지 공급하는 TiCl
4 공급 라인(210C)을 구비하고, SiH
2 Cl
2 공급 라인은 적어도 가스 도입구까지는 다른 공급 라인과는 합류되지 않도록 독립적으로 마련했다.Abstract translation: （问题）至少在室外，SiH
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公开(公告)号：KR1020070012574A
公开(公告)日：2007-01-25
申请号：KR1020077001030
申请日：2004-05-13
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/455
CPC classification number: C23C16/45561 , C23C16/4412 , H01L21/28556 , H01L21/28562
Abstract: A treating device for applying film- formation treatment to a body to be treated (for example, semiconductor wafer) by using raw material gas and reactive gas, comprising a treatment container (22) storing the body to be treated (W) therein, a raw material gas supply system (50) and a reactive gas supply system (52) selectively supplying the raw material gas and the reactive gas into the treatment container, and an evacuating system (36) having vacuum pumps (44) and (46) for evacuating atmosphere in the treatment container. The device further comprises a raw material gas bypassing system (62) and a reactive gas bypassing system (66) selectively flowing the raw material gas and the reactive gas from the gas supply systems to the evacuating system while bypassing the treatment container. A raw material gas outflow prevention valve (X1) and a reactive gas outflow prevention valve (Y1) for preventing, in closed states, the raw material gas and the reactive gas from flowing out to the evacuation system are installed in the bypass systems (62) and (66). ® KIPO & WIPO 2007
Abstract translation: 一种处理装置，其通过使用原料气体和反应性气体，将待处理体（例如半导体晶片）进行成膜处理，包括：将待处理体（W）存储在其中的处理容器（22） 原料气体供给系统（50）和选择性地将原料气体和反应性气体供给到处理容器中的反应气体供给系统（52）以及具有真空泵（44）和（46）的排气系统（36），用于 在处理容器中抽真空。 该设备还包括原料气旁通系统（62）和反应气体旁通系统（66），其选择性地将原料气体和反应性气体从气体供应系统流动到排气系统，同时绕过处理容器。 旁路系统（62）中安装有原料气体流出防止阀（X1）和反应气体流出防止阀（Y1），用于防止原料气体和反应气体在关闭状态下流出到排气系统 ）和（66）。 ®KIPO＆WIPO 2007
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公开(公告)号：KR1020060032668A
公开(公告)日：2006-04-17
申请号：KR1020067006261
申请日：2002-08-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/455 , H01L21/285
CPC classification number: C23C16/4557 , C23C16/14 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/45521 , C23C16/45523 , C23C16/45565 , C23C16/45572 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
Abstract: A gas treating device (1) comprises a treating vessel (2) for applying a treatment to a wafer (W) by using a treating gas, a mounting block (5) disposed in the treating vessel (2) and adapted to have the wafer (W) mounted thereon, a shower head (22) disposed in opposed relation to the wafer (W) on the mounting block (5) and adapted to deliver a treating gas to the treating vessel (2), and an exhaust means (132) for exhausting the treating vessel (2), the shower head (22) having first gas delivery holes(46) opposed to the wafer (W) mounted on the mounting block (5), and second gas delivery holes (47) formed around the first gas delivery holes (46) separately from the first gas delivery holes (46) and adapted to deliver the treating gas around the wafer (W) on the mounting block (5). And, the gas can be uniformly fed to a base plate to apply a uniform gas treatment.
Abstract translation: 气体处理装置（1）包括处理容器（2），用于通过使用处理气体对晶片（W）进行处理，设置在处理容器（2）中的安装块（5）并且适于具有晶片 （W），安装在所述安装块（5）上与所述晶片（W）相对的并适于将处理气体输送到所述处理容器（2）的淋浴头（22）和排气装置（132） ），用于排出处理容器（2）的喷淋头（22），具有与安装在安装块（5）上的晶片（W）相对的第一气体输送孔（46）的喷淋头（22）和形成在第一气体输送孔 所述第一气体输送孔（46）与所述第一气体输送孔（46）分开并且适于将处理气体输送到所述安装块（5）上的所述晶片（W）周围。 并且，可以将气体均匀地供给到基板以进行均匀的气体处理。
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Patent Agency Ranking
公开(公告)号：KR1020040017845A
公开(公告)日：2004-02-27
申请号：KR1020047001496
申请日：2002-08-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/4557 , C23C16/14 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/45521 , C23C16/45523 , C23C16/45565 , C23C16/45572 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
Abstract: 가스 처리 장치(1)는 처리 가스를 사용하여 웨이퍼(W)에 처리를 실시하는 처리 용기(2)와, 상기 처리 용기(2)내에 배치되어, 웨이퍼(W)가 재치되는 재치대(5)와, 상기 재치대(5)상의 웨이퍼(W)에 대응하여 설치되어, 상기 처리 용기(2)내로 처리 가스를 토출하는 샤워 헤드(shower head)(22)와, 상기 처리 용기(2)내를 배기하는 배기 수단(132)을 구비하고, 상기 샤워 헤드(22)는, 상기 재치대(5)에 재치된 웨이퍼(W)에 대응하여 설치된 제 1 가스 토출 구멍(46)과, 상기 제 1 가스 토출 구멍(46)과는 별개로, 상기 제 1 가스 토출 구멍(46)의 주위에 설치되어, 상기 재치대(5)상의 웨이퍼(W)의 주변부에 처리 가스를 토출하는 제 2 가스 토출 구멍(47)을 갖는다. 그리고, 기판에 대하여 가스를 균일하게 공급하여 균일한 가스 처리를 실시할 수 있다.
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公开(公告)号：KR1020060019536A
公开(公告)日：2006-03-03
申请号：KR1020057021540
申请日：2004-05-13
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/455 , H01L21/285
CPC classification number: C23C16/45561 , C23C16/4412 , H01L21/28556 , H01L21/28562
Abstract: A treating device for applying film- formation treatment to a body to be treated (for example, semiconductor wafer) by using raw material gas and reactive gas, comprising a treatment container (22) storing the body to be treated (W) therein, a raw material gas supply system (50) and a reactive gas supply system (52) selectively supplying the raw material gas and the reactive gas into the treatment container, and an evacuating system (36) having vacuum pumps (44) and (46) for evacuating atmosphere in the treatment container. The device further comprises a raw material gas bypassing system (62) and a reactive gas bypassing system (66) selectively flowing the raw material gas and the reactive gas from the gas supply systems to the evacuating system while bypassing the treatment container. A raw material gas outflow prevention valve (X1) and a reactive gas outflow prevention valve (Y1) for preventing, in closed states, the raw material gas and the reactive gas from flowing out to the evacuation system are installed in the bypass systems (62) and (66).
Abstract translation: 一种处理装置，其通过使用原料气体和反应性气体，将待处理体（例如半导体晶片）进行成膜处理，包括：将待处理体（W）存储在其中的处理容器（22） 原料气体供给系统（50）和选择性地将原料气体和反应性气体供给到处理容器中的反应气体供给系统（52）以及具有真空泵（44）和（46）的排气系统（36），用于 在处理容器中抽真空。 该装置还包括原料气旁通系统（62）和反应气体旁通系统（66），其选择性地将原料气体和反应性气体从气体供应系统流动到排气系统，同时绕过处理容器。 旁路系统（62）中安装有原料气体流出防止阀（X1）和反应气体流出防止阀（Y1），用于防止原料气体和反应气体在关闭状态下流出到排气系统 ）和（66）。
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公开(公告)号：KR1020130058627A
公开(公告)日：2013-06-04
申请号：KR1020120133521
申请日：2012-11-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/285 , C23C16/34 , H01L21/318
CPC classification number: C23C16/45565 , C23C16/4412 , C23C16/4585
Abstract: PURPOSE: A film forming apparatus is provided to prevent SiH2Cl2 gas from being mixed with different gases using individual gas supply lines, and restrain the generation of particles due to a gas byproduct. CONSTITUTION: A film forming process is performed on a wafer in a chamber(102). A process gas supply part(200) supplies a process gas to the chamber. The process gas supply part includes an NH3 supply part(200A), a SiH2Cl2 supply part(200B), and a TiCl4 supply part(200C). An exhausting part(300) includes an exhaust line(310) connected to the outlet of the chamber. A vacuum pump(330) is connected to the exhaust line. The vacuum pump maintains a vacuum pressure by vacuum absorption. [Reference numerals] (102) Chamber; (242C) Vaporizer; (320) Trap; (330) Vacuum pump
Abstract translation: 目的：提供一种成膜设备，以防止SiH2Cl2气体与各种气体供应管线混合，并抑制由气体副产物产生的颗粒。 构成：在室（102）中的晶片上进行成膜工艺。 工艺气体供应部件（200）将处理气体供应到腔室。 处理气体供给部包括NH 3供给部（200A），SiH2Cl2供给部（200B）和TiCl4供给部（200C）。 排气部（300）包括连接到室的出口的排气管（310）。 真空泵（330）与排气管连接。 真空泵通过真空吸收维持真空压力。 （102）室; （242C）蒸发器; （320）陷阱; （330）真空泵
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公开(公告)号：KR100881786B1
公开(公告)日：2009-02-03
申请号：KR1020037008686
申请日：2001-12-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45565 , C23C16/455 , C23C16/45521 , C23C16/4581 , C23C16/481 , H01L21/28556 , H01L21/67115 , H01L21/68721
Abstract: A processing container, a pedestal for mounting wafer W, a processing gas feeder for feeding a processing gas to the front surface of the wafer W, an annular substrate-holding member for holding the wafer W, a purge gas feeder for feeding purge gas into a space formed at the backside surface side of the wafer W, a purge gas flow path for upwardly inducing a purge gas inside said space from between the wafer W and said substrate holding member, and a gas discharge mechanism for discharging said purge gas in a case that a pressure in said space becomes higher than a pressure outside said space within said processing container by a predetermined value. Further, a susceptor is composed of a material with thermal radiation transmissivity equal to or lower than dissimilar members such as temperature sensors contained in the susceptor.
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公开(公告)号：KR1020080013025A
公开(公告)日：2008-02-12
申请号：KR1020087001675
申请日：2001-12-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/285
CPC classification number: C23C16/45565 , C23C16/455 , C23C16/45521 , C23C16/4581 , C23C16/481 , H01L21/28556 , H01L21/67115 , H01L21/68721
Abstract: A treating device, comprising a treatment container, a loading table for placing a wafer (W) thereon, a treatment gas feed means for feeding treatment gas to the surface side of the wafer (W), an annular substrate holding member for holding the wafer (W), a purge gas feed means for feeding purge gas into a space formed on the rear side of the wafer (W), a purge gas flow path for leading the purge gas in the space upward from between the wafer (W) and the substrate holding member, and a gas discharge mechanism (30) for discharging the purge gas when the pressure in the space is increased by a specified value or more over the pressure in a space on the outside of the space in the treatment container, wherein a susceptor is formed of a material having a heat wave transmittance approximately equal to or less than that of a different member such as a temperature sensor incorporated in the susceptor.
Abstract translation: 一种处理装置，包括处理容器，用于将晶片（W）放置在其上的装载台，用于将处理气体供给到晶片（W）的表面侧的处理气体供给装置，用于保持晶片 （W），用于将吹扫气体供给到形成在晶片（W）的后侧上的空间的净化气体供给装置，用于将清洗气体沿着晶片（W）和 所述基板保持部件以及当所述空间内的压力比所述处理容器的空间的外侧的空间内的压力上升规定值以上时，将所述吹扫气体排出的气体排出机构（30），其特征在于， 感受器由具有大致等于或不小于不同构件的热波透过率的材料形成，诸如结合在基座中的温度传感器。
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