公开(公告)号：KR101208295B1

公开(公告)日：2012-12-05

申请号：KR1020077014655

申请日：2005-12-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사까모또고오이찌 ,  오바따미노루 ,  고야마노리아끼

IPC: H01L21/205 ,  C23C16/44 ,  G05B23/02

CPC classification number: C23C16/4412 ,  C23C16/52 ,  G05B23/0235 ,  H01L21/67288

Abstract: 반도체제조장치의이상을검출하기위해, 반도체제조장치의상태를나타내는복수의장치상태변수로부터선택된 2개의감시대상변수를각각제1 축및 제2 축으로할당된 2축좌표계가준비된다. 감시대상변수로서, 예를들면성막장치에있어서실시된과거의성막처리의누적막 두께와, 반응용기내 압력을제어하기위해진공배기로에마련된압력조정밸브의개방도가선택된다. 과거에반도체제조장치가정상적으로가동하고있는경우에취득된감시대상변수의값이 2축좌표계위에플롯된다. 플롯군의주위에정상상태와이상상태의경계가설정된다. 반도체제조장치의현재의운전시에취득된감시대상변수의값이 2축좌표계위에플롯되어, 이플롯과상기경계와의위치관계를기초로하여, 이상발생의유무, 및이상의종류가특정된다.

公开(公告)号：KR1020070090959A

公开(公告)日：2007-09-06

申请号：KR1020077014655

申请日：2005-12-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사까모또고오이찌 ,  오바따미노루 ,  고야마노리아끼

IPC: H01L21/205 ,  C23C16/44 ,  G05B23/02

CPC classification number: C23C16/4412 ,  C23C16/52 ,  G05B23/0235 ,  H01L21/67288

Abstract: A two-axis coordinate system, in which two parameters to be monitored selected from a plurality of apparatus status parameters indicating a status of a semiconductor manufacturing apparatus are allocated to a first axis and a second axis, respectively, is prepared so as to detect an abnormality of the semiconductor manufacturing apparatus. As the parameters to be monitored, for example, a cumulative film thickness of a film forming process performed in the past by a film forming apparatus, and an open degree of a pressure adjusting valve provided in a vacuum exhaust path for controlling the pressure in a reactor vessel are selected. A value of the parameter to be monitored, which was obtained while the semiconductor manufacturing apparatus was normally operating in the past, is plotted on the two-axis coordinate system. A boundary between a normal status and an abnormal status is set around a plot group. A value of the parameter to be monitored, which is obtained while the semiconductor manufacturing apparatus is currently operating, is plotted on the two-axis coordinate system, and based on a positional relationship between the plot and the boundary, whether an abnormality is generated or not and a type of the abnormality are specified.

Abstract translation: 准备两轴坐标系，其中分别将从表示半导体制造装置的状态的多个装置状态参数中选择的两个要监视的参数分配给第一轴和第二轴，以便检测 半导体制造装置的异常。 作为要监视的参数，例如，过去由成膜装置进行的成膜处理的累积膜厚度和设置在真空排气路径中的压力调节阀的开度，用于控制在 选择反应堆容器。 在半轴制造装置过去正常工作时获得的要监视的参数的值被绘制在两轴坐标系上。 围绕绘图组设置正常状态和异常状态之间的边界。 在半轴制造装置当前操作时获得的要监视的参数的值被绘制在双轴坐标系上，并且基于绘图与边界之间的位置关系，是否产生异常或 没有指定异常的类型。

公开(公告)号：KR1020050053713A

公开(公告)日：2005-06-08

申请号：KR1020057005461

申请日：2003-10-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 후지따다께히꼬 ,  오까다미쯔히로 ,  우메자와고오따 ,  하세베가즈히데 ,  사까모또고오이찌

IPC: H01L21/205 ,  C23C16/52

CPC classification number: H01L21/67253 ,  F27B17/0025 ,  H01L21/67109

Abstract: A heat treating system comprising a holding unit for holding a plurality of substrates, a reaction container into which the holding unit is carried, a treating gas supply mechanism for supplying a treating gas into the reaction container, and a heating mechanism for heating the reaction container when the treating gas is supplied to perform a film-forming processing on the substrates. Flow- rate parameter table data in which data on the number of substrates scheduled for treating in one batch is allowed to correspond to the target value data of the treating gas flow-rate parameters is stored in a flow-rate parameter table data storing unit. A control means obtains the target value data of the treating gas flow-rate parameters according to an actual number of substrates scheduled for treating in one batch and based on flow-rate parameter table data stored in the flow-rate parameter table data storing unit, and controls the treating gas supply mechanism according to the target value data. The target value data of the flow- rate parameters is so determined as to provide a uniform film-forming speed to treating batches in which the number of substrate scheduled for treating differs from one another.

Abstract translation: 一种热处理系统，包括用于保持多个基板的保持单元，承载保持单元的反应容器，用于将处理气体供应到反应容器中的处理气体供给机构，以及用于加热反应容器的加热机构 当处理气体被供给以在基板上进行成膜处理时。 将流量参数表数据存储在流量参数表数据存储部中，流量参数表数据被存储在流量参数表数据存储单元中，其中计划用于一批处理的基板数量被允许对应于处理气体流量参数的目标值数据。 控制装置根据预定一批处理的基板的实际数量，根据存储在流量参数表数据存储部中的流量参数表数据，求出处理气体流量参数的目标值数据， 并根据目标值数据控制处理气体供给机构。 流量参数的目标值数据被确定为提供均匀的成膜速度以处理其中预定处理的基板的数量彼此不同的批次。