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公开(公告)号：KR1020140044267A
公开(公告)日：2014-04-14
申请号：KR1020130115133
申请日：2013-09-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/42 , H01L21/318 , C23C16/50
CPC classification number: H01L21/0226 , C23C16/045 , C23C16/345 , C23C16/511 , C23C16/56 , H01J37/32192 , H01J37/32238 , H01J37/32449 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/02329
Abstract: A deposition method of the present invention is to form a high-coverage insulating layer through a low-temperature process. According to the deposition method, an insulating layer (108) is formed on a substrate to be treated by using a deposition apparatus, which includes a treatment vessel (12) in which a treatment space for the generation of plasma is defined, a gas supply part for supplying gas into the treatment space, and a plasma generator (GS) for generating the plasma by supplying micro-waves into the treatment vessel (12). The deposition method includes a deposition process of forming the insulating layer (108) including SiN on a substrate (W) to be treated by supplying gas containing H_2 added to trisilylamine to the treatment vessel (12) to generate the plasma. [Reference numerals] (AA) Start; (BB) End; (S1) Prepare a substrate to be treated; (S2) Etch to a first magnetic layer; (S3) Remove a reaction product; (S4) For an insulating layer; (S5) Etch a tunnel barrier layer, a second magnetic layer, and a pinned layer; (S6) Etch a lower electrode
Abstract translation: 本发明的沉积方法是通过低温工艺形成高覆盖绝缘层。 根据该沉积方法，通过使用沉积设备在待处理的基板上形成绝缘层（108），所述沉积设备包括其中限定用于产生等离子体的处理空间的处理容器（12），气体供应 用于向处理空间供给气体的部件，以及用于通过向处理容器（12）供给微波来产生等离子体的等离子体发生器（GS）。 沉积方法包括沉积工艺，其通过向处理容器（12）中供应含有添加到三甲胺的H 2的气体来在待处理的基板（W）上形成包括SiN的绝缘层（108），以产生等离子体。 （附图标记）（AA）开始; （BB）结束; （S1）准备待处理的基材; （S2）蚀刻到第一磁性层; （S3）除去反应产物; （S4）绝缘层; （S5）蚀刻隧道势垒层，第二磁性层和钉扎层; （S6）蚀刻下电极
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公开(公告)号：KR101541642B1
公开(公告)日：2015-08-03
申请号：KR1020140020308
申请日：2014-02-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01J37/32192 , H01J37/32229 , H01J37/3244
Abstract: 본발명은플라즈마화되는처리가스를공급하기위한경로의전계강도를저감시키는것을목적으로한다. 플라즈마처리장치는, 처리공간을구획하는처리용기와, 플라즈마여기용마이크로파를발생하는마이크로파발생기를구비한다. 또한, 플라즈마처리장치는, 처리공간을밀폐하도록처리용기에장착되어, 마이크로파발생기에의해발생되는마이크로파를처리공간으로도입하는유전체부재를구비한다. 또한, 플라즈마처리장치는, 유전체부재의내부에설치되어, 마이크로파에의해플라즈마화되는처리가스를유전체부재에형성된관통구멍을통해처리공간에공급하는인젝터를구비한다. 또한, 플라즈마처리장치는, 유전체부재의관통구멍을둘러싸도록인젝터의내부에배치되어, 관통구멍을향해유전체부재의내부를전파하는마이크로파를인젝터의내부측에도파하는유전체제(製)의도파판을구비한다.
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Patent Agency Ranking
公开(公告)号：KR1020150048754A
公开(公告)日：2015-05-07
申请号：KR1020157005309
申请日：2013-06-18
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01J37/32 , H05H1/46 , C23C16/511 , C23C16/458
CPC classification number: H01J37/32779 , C23C16/4584 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01J37/32743 , H01J37/32752 , H01J37/32788 , H01J37/32834 , H05H1/46 , H05H2001/463
Abstract: 회전배치대를회전시키면서복수의기판을동시에처리할때에, 회전배치대의반경방향의기판표면의처리균일성을향상시킨다. 처리실(102) 내에회전가능하게배치된회전축(114)에지지되고, 웨이퍼(W)를배치하는웨이퍼배치부(113)를원주방향으로복수개 나란하게설치한회전배치대(110)와, 처리실내에처리가스를공급하는처리가스공급부(170)와, 회전배치대에대향하여처리실의천장에설치되며, 처리가스의플라즈마를생성하기위한복수의마이크로파도입기구(224)를원주방향을따라서환상으로나란하게일렬로하고, 이것을회전배치대가회전했을때의웨이퍼궤적의내측으로부터외측에걸쳐복수열 이격하여배열한플라즈마생성부(200)와, 처리실내부를배기하는배기부(164)를설치했다.
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公开(公告)号：KR102217492B1
公开(公告)日：2021-02-19
申请号：KR1020167022025
申请日：2015-02-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01J37/32 , H01L21/02 , H01L43/12 , C23C16/455
Abstract: 전자파방전방식의플라즈마처리장치에있어서, 유전체창가스유로내의이상방전을방지하면서, 유전체창가스유로내의가스의전환을단시간에행하여, 상이한종류의플라즈마처리공정을교대로일정한사이클로반복하는프로세스의고속화를실현한다. 이플라즈마처리장치는처리가스공급부(80)로부터제공되는처리가스를챔버(12) 내에도입하기위한가스도입기구로서, 3계통의가스라인, 즉유전체창(18)에가스유로(96) 및가스분출구(94)를마련하는천장가스라인(82)과, 상이한높이위치로챔버(12)의측벽(12a)에가스유로(100, 108) 및가스분출구(102, 110)를각각마련하는하부측벽가스라인(84) 및상부측벽가스라인(86)을구비하고있다. 그리고, 천장가스라인(82)의제1 가스공급관(90)과배기부(55, 56)를잇는바이패스배기라인(116)을구비하고있다.
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公开(公告)号：KR1020150073086A
公开(公告)日：2015-06-30
申请号：KR1020140177590
申请日：2014-12-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065 , H05H1/46
CPC classification number: C23C16/345 , C23C16/45561 , C23C16/4558 , C23C16/511
Abstract: 기판처리장치의처리용기내에처리가스를도입할때에, 상기처리가스가경유하는확산실내에서의가스의흐름을최적화함으로써, 처리용기내에도입되는처리가스의균일화를행한다. 처리가스에의해피처리체를처리하는기판처리장치로서, 피처리체를수용하는처리용기와, 상기처리용기내에마련되고, 피처리체를배치하는배치부와, 상기처리용기의측면에마련되며, 상기처리용기의내부에처리가스를공급하는처리가스공급부와, 상기처리가스공급부의외방에마련되는처리가스확산기구를구비하고, 상기처리가스확산기구는다단으로마련된제1 확산실과제2 확산실로구성되며, 상기제1 확산실은상기제2 확산실의상방에위치하고, 이들제1 확산실과제2 확산실은복수의처리가스연통로를통해연통하고있는것을특징으로하는, 기판처리장치가제공된다.
Abstract translation: 当处理气体被引入基板处理装置的处理容器中时，工艺气体通过的扩散室中的气流被优化，从而使引入到处理容器中的处理气体相等。 提供了一种通过处理气体处理物体的基板处理装置，该处理气体包括存储该物体的处理容器; 形成在处理容器中的布置部件，并且布置该物体; 处理气体供给部，其形成在所述处理容器的侧面，并且将所述处理气体供给到所述处理容器内; 以及处理气体扩散工具，其形成在处理气体供给部分的外侧，其中处理气体扩散工具由多级形成的第一扩散室和第二扩散室组成，第一扩散室位于 第二扩散室和第一扩散室和第二扩散室通过多个处理气体连接路径连接。
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公开(公告)号：KR1020160130994A
公开(公告)日：2016-11-15
申请号：KR1020167022025
申请日：2015-02-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01J37/32 , H01L21/02 , H01L43/12 , C23C16/455
CPC classification number: C23C16/345 , C23C16/4412 , C23C16/45523 , C23C16/45529 , C23C16/45536 , C23C16/45548 , C23C16/45561 , C23C16/511 , H01J37/32119 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01J2237/3321 , H01L21/0217 , H01L21/02274 , H01L43/12
Abstract: 전자파방전방식의플라즈마처리장치에있어서, 유전체창가스유로내의이상방전을방지하면서, 유전체창가스유로내의가스의전환을단시간에행하여, 상이한종류의플라즈마처리공정을교대로일정한사이클로반복하는프로세스의고속화를실현한다. 이플라즈마처리장치는처리가스공급부(80)로부터제공되는처리가스를챔버(12) 내에도입하기위한가스도입기구로서, 3계통의가스라인, 즉유전체창(18)에가스유로(96) 및가스분출구(94)를마련하는천장가스라인(82)과, 상이한높이위치로챔버(12)의측벽(12a)에가스유로(100, 108) 및가스분출구(102, 110)를각각마련하는하부측벽가스라인(84) 및상부측벽가스라인(86)을구비하고있다. 그리고, 천장가스라인(82)의제1 가스공급관(90)과배기부(55, 56)를잇는바이패스배기라인(116)을구비하고있다.
Abstract translation: 一种用于交替地执行使用第一和第二处理气体的第一等离子体处理步骤的等离子体处理装置和使用第三和第四处理气体的第二等离子体处理步骤 该装置包括：处理容器，其在天花板中具有介电窗口并可移除地容纳工件; 排气单元，其排出处理容器; 处理气体供应单元，其将第一，第二，第三和第四处理气体供应到处理容器中; 第一气体导入单元，包括顶板气体注入口，电介质窗口气体流路和第一外部气体流路; 第二气体引入单元，包括侧壁气体注入口，侧壁气体流路和第二外部气体流路; 向所述等离子体产生空间供给电磁波的电磁波供给部; 旁路排气通道; 和开闭阀。
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公开(公告)号：KR1020140106417A
公开(公告)日：2014-09-03
申请号：KR1020140020308
申请日：2014-02-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01J37/32192 , H01J37/32229 , H01J37/3244
Abstract: The present invention is to reduce the electric intensity of a path to supply processing gas to be plasmatized. A plasma processing apparatus comprises a processing container, a microwave generator, a dielectric member, an injector, and a dielectric waveguide plate. The processing container is divided for a processing room, and the microwave generator generates microwave for plasma excitation. The dielectric member introduces the microwave generated by the microwave generator into the processing room, as installed in the processing container to seal the processing room. The injector supplies a processing gas plasmatized by the microwave to the processing room through a penetrating hole formed on the dielectric member, as installed inside the dielectric member. And the dielectric waveguide plate guides the microwave diffused inside the dielectric member through the penetrating hole to the inner side of the injector, as arranged inside the injector to cover the penetrating hole of the dielectric member.
Abstract translation: 本发明是为了降低供给等离子体化处理气体的路径的电气强度。 等离子体处理装置包括处理容器，微波发生器，电介质构件，注射器和电介质波导板。 处理容器分为处理室，微波发生器产生用于等离子体激发的微波。 介电部件将由微波发生器产生的微波引入加工室内，安装在处理容器中以密封处理室。 喷射器通过形成在电介质构件上的贯穿孔将微波等离子体的处理气体提供给处理室，安装在电介质构件的内部。 并且电介质波导板将布置在电介质构件内部的微波通过穿透孔引导到喷射器的内侧，布置在喷射器内部以覆盖电介质构件的穿透孔。
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