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公开(公告)号：KR1020100138760A
公开(公告)日：2010-12-31
申请号：KR1020100055594
申请日：2010-06-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306
CPC classification number: H01L21/67051 , H01L21/6708
Abstract: PURPOSE: A liquid processing apparatus and a liquid processing method are provided to eliminate a first film and a second film from a substrate regardless of the dissolvability of the second film with respect to first liquid. CONSTITUTION: A first liquid supplying part(51) supplies first liquid to a substrate in order to dissolve a first film on a substrate. A second liquid supplying part supplies second liquid to the substrate in order to reduce the intensity of a second film on the substrate. An impact alleviating part applies impact to the second film on the substrate. A fluid supplying part(52) supplies fluid to the substrate in order to discharge the particles of the second film.
Abstract translation: 目的：提供一种液体处理装置和液体处理方法，以便从第二膜与第一液体的溶解性无关地从基材上除去第一膜和第二膜。 构成：第一液体供应部分（51）将第一液体供应到基底以便将第一膜溶解在基底上。 为了降低基板上的第二膜的强度，第二液体供给部件将第二液体供给到基板。 冲击减轻部件对基板上的第二膜施加冲击。 流体供应部分（52）为了排出第二膜的颗粒而向流体供应流体。
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公开(公告)号：KR101526264B1
公开(公告)日：2015-06-05
申请号：KR1020100055594
申请日：2010-06-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306
CPC classification number: H01L21/67051 , H01L21/6708
Abstract: 새로운방법을이용하여기판의표면으로부터막을제거하는액처리장치등을제공한다. 제 1 막의상층에제 2 막이형성된기판으로부터제 1 막및 제 2 막을제거하는액처리장치(3)에서, 제 1 약액공급부(51)는기판(W)으로제 1 막을용해시키기위한제 1 약액을공급하고, 제 2 약액공급부(51)는제 2 막의강도를저하시키기위한제 2 약액을공급하고, 충격공여부로서의기능을겸하는유체공급부(52)는제 2 막에물리적충격을주어당해제 2 막을파괴하고또한, 파괴된제 2 막의파편을흘려보내기위한유체를공급한다. 제어부(7)는제 2 약액을공급하고, 이어서유체공급부(52)로부터유체를공급한후 제 1 약액을공급하도록각 부를제어한다.
Abstract translation: 使用新方法从基板表面去除膜的液体处理装置等。 在第一膜和用于从衬底上形成的第一膜，在上层中，第一化学液体供给单元51的第二薄膜包括用于溶解权利要求1的膜作为基材的第一化学（W）去除所述第二膜中的液体处理装置（3） 供给，并且所述第二化学液体供给部51 neunje 2膜的强度，和用于减小，也服务于用作休克施主流体源52 neunje给出在第二薄膜上第二销毁膜的物理性冲击的技术供应第二液体药剂 并且还提供用于流动破碎的第二膜的碎片的流体。 控制单元7控制各个单元以供应第二药液，然后从流体供应单元52供应流体，然后供应第一药液。
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公开(公告)号：KR100677965B1
公开(公告)日：2007-02-01
申请号：KR1020000063957
申请日：2000-10-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/02071 , G03F7/405 , H01L21/6708 , H01L21/76814
Abstract: 본 발명은 기판처리방법 및 기판처리장치에 관한 것으로써, 금속층을 가지는 기판에 부착한 폴리머층과 금속부착물을 제거하는 방법에 관한 것이다. 우선 불활성가스 분위기 속에서 약제로 폴리머층을 제거한다. 이후 불활성가스 분위기 속으로 미량의 산소를 도입하여 금속부착물을 산화시키고, 산화된 금속부착물을 약제로 제거하는 기술이 제시된다.
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公开(公告)号：KR1020010051335A
公开(公告)日：2001-06-25
申请号：KR1020000063957
申请日：2000-10-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/02071 , G03F7/405 , H01L21/6708 , H01L21/76814
Abstract: PURPOSE: A substrate treating method and a substrate treating equipment is provided to eliminate metal sticking to a substrate, without damaging the metal layer. CONSTITUTION: When metal deposit adhering to a substrate(W) having a metal layer is eliminated by using treatment liquid, the substrate(W) is inserted in a chamber(8), a prescribed amount of inert gas and oxygen containing gas are introduced in the chamber(8), oxygen atmosphere having a prescribed concentration is formed in the chamber(8), the treatment liquid is supplied to the chamber, and the deposit which is oxidized by oxygen in the atmosphere in the chamber is dissolved and removed.
Abstract translation: 目的：提供基板处理方法和基板处理设备，以消除金属粘附到基板上而不损坏金属层。 构成：通过使用处理液除去附着在具有金属层的基板（W）上的金属沉积物时，将基板（W）插入室（8）中，将规定量的惰性气体和含氧气体引入 在室（8）中形成具有规定浓度的氧气氛，将处理液供给到室内，并将溶解并除去室内的气氛中的氧被氧化的沉积物。
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Patent Agency Ranking
公开(公告)号：KR101831789B1
公开(公告)日：2018-02-23
申请号：KR1020130160092
申请日：2013-12-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: B01D19/0005 , H01L21/67023
Abstract: 기판상에형성된배선의부식을방지할수 있는액 처리장치및 약액회수방법을제공하는것이다. 실시예에따른액 처리장치는, 처리부와회수관과공급관과가스공급부를구비한다. 처리부는기판으로약액을공급하여액 처리를행한다. 회수관은처리부로공급된약액을회수한다. 공급관은회수된약액을처리부로공급한다. 가스공급부는회수관의내부를향해불활성가스를공급한다.
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公开(公告)号：KR1020140086850A
公开(公告)日：2014-07-08
申请号：KR1020130160092
申请日：2013-12-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: B01D19/0005 , H01L21/67023
Abstract: The present invention provides a liquid processing apparatus and a liquid chemical collecting method for preventing corrosion of a wiring provided on a substrate. The liquid processing apparatus according to an embodiment includes a processing unit, a collecting pipe, a supply pipe, and a gas supply unit. The processing unit performs liquid processing by supplying liquid chemical to the substrate. The collecting pipe collects the liquid chemical supplied to the processing unit. The supply pipe supplies the collected liquid chemical to the processing unit. The gas supply unit supplies inert gas to the inside of the collecting pipe.
Abstract translation: 本发明提供一种用于防止设置在基板上的布线的腐蚀的液体处理装置和液体化学品收集方法。 根据实施例的液体处理装置包括处理单元，收集管，供应管和气体供应单元。 处理单元通过向基板供给液体化学品来执行液体处理。 收集管收集供给处理单元的液体化学品。 供应管将收集的液体化学品供应到处理单元。 气体供给单元向收集管的内部供给惰性气体。
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公开(公告)号：KR100772469B1
公开(公告)日：2007-11-02
申请号：KR1020057021359
申请日：2004-11-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
Abstract: 본 발명은 웨이퍼(W)를 거의 수평 자세로 소정의 회전수로 회전시키면서 그 표면에 소정 유량으로 순수를 공급하여 웨이퍼(W)를 린스 처리한 후에, 웨이퍼(W)로의 순수 공급 유량을 줄이고, 또한 순수 공급점을 웨이퍼(W)의 중심으로부터 외측으로 이동시킨다. 이렇게 해서 순수 공급점의 거의 외측에서 액막을 형성하면서 웨이퍼(W)를 스핀 건조 처리한다.
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公开(公告)号：KR1020060034640A
公开(公告)日：2006-04-24
申请号：KR1020057021359
申请日：2004-11-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
Abstract: After rinsing a wafer (W) by rotating the wafer generally horizontally at a certain revolution speed and supplying purified water to the surface thereof at a certain flow rate, the supplying rate of purified water to the wafer (W) is decreased and the supplying point of purified water is moved from the center to the circumferential part of the wafer (W). Consequently, the wafer (W) is spin-dried, while forming a liquid film in a position generally outside the purified water supplying point.
Abstract translation: 通过以一定的转速大致水平旋转晶片冲洗晶片（W）并以一定的流量向其表面供给净化水，净化水对晶片（W）的供给速率降低，供给点 的净化水从晶片（W）的中心移动到周向部分。 因此，将晶片（W）旋转干燥，同时在纯化水供给点的大致外侧形成液膜。
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公开(公告)号：KR1020010039694A
公开(公告)日：2001-05-15
申请号：KR1020000036288
申请日：2000-06-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: B01J19/1887 , B05C11/08 , H01L21/31133
Abstract: PURPOSE: Provided is a substrate treatment method without damages, when manufacturing a metal wiring, especially copper wiring. CONSTITUTION: In the water treatment method, a photoresist film(104) is formed on a wafer(W) where a copper film(101), an SiN film(102), and a low-k film(103) are formed successively, dry etching is made with the photoresist film(104) as an etching mask, a contact hole(105) is formed, and the photoresist film(104) and a sidewall protective film(polymer film,106) are eliminated(wet-treated) by a resist polymer removing liquid in an inner treatment chamber.
Abstract translation: 目的：制造金属布线，特别是铜布线时，不需要损坏的基板处理方法。 构成：在水处理方法中，在连续形成铜膜（101），SiN膜（102）和低k膜（103）的晶片（W）上形成光致抗蚀剂膜（104） 用光致抗蚀剂膜（104）作为蚀刻掩模进行干蚀刻，形成接触孔（105），并且去除（湿处理）光致抗蚀剂膜（104）和侧壁保护膜（聚合物膜106） 通过在内部处理室中的抗蚀剂聚合物去除液体。
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