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公开(公告)号：KR1020050094053A
公开(公告)日：2005-09-26
申请号：KR1020057013741
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤 , 곤도 에이이치
IPC: H01L21/205
CPC classification number: H01L21/76843 , C23C18/1865 , C23C18/1882 , C23C18/1893 , C25D7/12 , H01L21/76807 , H01L21/76862 , H01L21/76877
Abstract: Formation of a Cu film on a fine pattern provided with a Cu diffusion preventing film, in which the surface of the Cu diffusion preventing film over a substrate to be treated is cleaned according to the cleaning method using a supercritical medium and in which further, Cu film formation using a supercritical medium is carried out to thereby achieve formation of void-free Cu film with high adhesion to the fine pattern. In particular, the above is accomplished through a substrate processing method characterized by comprising the first step of feeding a first treatment medium containing a supercritical medium onto a substrate to be treated so as to clean a metallic film lying at the surface of the substrate to be treated and the second step of feeding a second treatment medium containing the supercritical medium onto the substrate to thereby form a Cu film.
Abstract translation: 在设置有Cu扩散防止膜的精细图案上形成Cu膜，其中根据使用超临界介质的清洁方法清洁在待处理的基板上的Cu扩散防止膜的表面，并且其中Cu 进行使用超临界介质的成膜，从而形成对微细图案具有高粘附性的无空隙的Cu膜。 特别地，上述是通过基板处理方法实现的，其特征在于包括将包含超临界介质的第一处理介质供给到待处理的基板上的第一步骤，以清洁位于基板表面的金属膜为 以及将含有超临界介质的第二处理介质供给到基板上以形成Cu膜的第二步骤。
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公开(公告)号：KR1019960035975A
公开(公告)日：1996-10-28
申请号：KR1019960005460
申请日：1996-03-02
Applicant: 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 , 도쿄엘렉트론가부시키가이샤
IPC: H01L21/768
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公开(公告)号：KR1020060097768A
公开(公告)日：2006-09-15
申请号：KR1020067016087
申请日：2002-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02126 , C23C16/30 , C23C16/401 , C23C16/452 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/3145 , H01L21/3148 , H01L21/31633 , H01L21/31695 , H01L21/3185
Abstract: A method for forming a film which comprises a step of introducing a gas to be treated comprising a compound having a cyclic structure in the molecule thereof into a chamber (12), and a step of exciting a gas for excitation, such as argon, by means of an activator (34) and then introducing the excited gas for excitation into the chamber (12), to indirectly excite the gas to be treated. The excited gas to be treated is deposited on a substrate (19) to be treated and forms a porous film having a cyclic structure in an increased content and thus exhibiting a reduced permitivity.
Abstract translation: 一种形成膜的方法，包括将包含其分子中具有环状结构的化合物的待处理气体引入到室（12）中的步骤，以及通过以下步骤将氩气激发气体的步骤： 活化剂（34）的装置，然后将激发的气体引入到室（12）中，以间接地激发待处理的气体。 待处理的被激发气体沉积在待处理的基材（19）上，并形成具有增加的含量的环状结构的多孔膜，从而显示出较低的介电常数。
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公开(公告)号：KR1020050088497A
公开(公告)日：2005-09-06
申请号：KR1020057013729
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤 , 곤도 에이이치
IPC: H01L21/205
CPC classification number: H01L21/76843 , H01L21/28556 , H01L21/76862
Abstract: In the process of manufacture of a semiconductor device, a Cu diffusion preventive film and a Cu film are buried in a fine pattern with a high-aspect ratio by using a supercritical medium by a substrate processing method. The method is characterized by comprising a first step of processing a substrate by supplying a first processing medium containing a first supercritical medium onto the substrate, a second step of forming a Cu diffusion preventive film on the substrate by supplying a second processing medium containing a second supercritical medium onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third supercritical medium onto the substrate.
Abstract translation: 在制造半导体器件的过程中，通过使用超临界介质通过衬底处理方法将Cu扩散防止膜和Cu膜埋入具有高纵横比的精细图案中。 该方法的特征在于包括：通过向衬底上提供含有第一超临界介质的第一处理介质来处理衬底的第一步骤，通过提供包含第二超临界介质的第二处理介质的第二处理介质在衬底上形成Cu扩散防止膜的第二步骤 超临界介质，以及通过将含有第三超临界介质的第三处理介质供给到所述基板上而在所述基板上形成Cu膜的第三工序。
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公开(公告)号：KR1020040029108A
公开(公告)日：2004-04-03
申请号：KR1020047003005
申请日：2002-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02126 , C23C16/30 , C23C16/401 , C23C16/452 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/3145 , H01L21/3148 , H01L21/31633 , H01L21/31695 , H01L21/3185
Abstract: 분자 내에 환상 구조를 갖는 화합물로 구성되는 처리 가스를 챔버(12)내에 도입한다. 한편으로 아르곤 등의 여기용 가스를 액티베이터(34)에 의해서 여기시켜 챔버(12) 내에 도입하여 처리 가스를 여기시킨다. 여기된 처리 가스는 피처리 기판(l9)상에 퇴적하여, 환상 구조를 막 중에 갖는 다공질 저유전율막을 형성한다.
Abstract translation: 由分子中具有环结构的化合物构成的处理气体被导入腔室（12）。 同时，由激活器（34）激励诸如氩等的激励气体并将其引入腔室（12）中，以使处理气体被激发。 激发的处理气体沉积在处理目标基板（19）上，在膜中形成具有环形结构的多孔低介电常数膜。
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Patent Agency Ranking
公开(公告)号：KR100778947B1
公开(公告)日：2007-11-22
申请号：KR1020047003005
申请日：2002-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02126 , C23C16/30 , C23C16/401 , C23C16/452 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/3145 , H01L21/3148 , H01L21/31633 , H01L21/31695 , H01L21/3185
Abstract: A process gas constituted by a compound having a ring structure in its molecules is introduced into a chamber (12). In the meantime, an excitation gas such as argon, etc. is excited by an activator (34) and introduced into the chamber (12), so that the process gas is excited. The excited process gas is deposited on a process target substrate (19), forming a porous low dielectric constant film having ring structures in the film.
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公开(公告)号：KR1020070058695A
公开(公告)日：2007-06-08
申请号：KR1020077010119
申请日：2005-10-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/314 , C23C16/26
CPC classification number: C23C16/26 , C23C16/45565 , C23C16/511 , H01J37/32192 , H01J37/32229 , H01L21/0212 , H01L21/02274 , H01L21/3127
Abstract: Plasma is produced on a substrate (W) placed in an airtight processing container (1) by introducing a microwave to a radial line slot antenna (4). Such conditions are set that a pressure in the processing container is 7.32Pa through 8.65Pa, a microwave power is 2000W through 2300W, the distance (L1) between the substrate surface and the opposite surface of a material gas supply member (3) is 70mm through 105mm, and the distance (L2) between the substrate surface and a discharge gas supply member (2) is 100mm through 140mm. Under these conditions, a material gas consisting of cyclic C5F8 gas is activated based on the energy of the microwave. Hence, a film forming seed containing large numbers of C4F6 ions and radicals are obtained. Accordingly, a fluorine-added carbon film excellent in leak characteristics and thermal stability is formed.
Abstract translation: 通过向径向线槽天线（4）引入微波，在放置在气密处理容器（1）的基板（W）上产生等离子体。 这样的条件被设定为处理容器的压力为7.32Pa至8.65Pa，微波功率为2000W至2300W，衬底表面与材料气体供应构件（3）的相对表面之间的距离（L1）为70mm 通过105mm，衬底表面和放电气体供应构件（2）之间的距离（L2）为100mm至140mm。 在这些条件下，基于微波的能量激活由循环C5F8气体组成的原料气体。 因此，获得含有大量C 4 F 6离子和自由基的成膜种子。 因此，形成了泄漏特性和热稳定性优异的氟加成膜。
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公开(公告)号：KR1020090033922A
公开(公告)日：2009-04-06
申请号：KR1020097004983
申请日：2005-10-04
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065 , C23C16/26
CPC classification number: C23C16/26 , C23C16/45565 , C23C16/511 , H01J37/32192 , H01J37/32229 , H01L21/0212 , H01L21/02274 , H01L21/3127
Abstract: Plasma is produced on a substrate (W) placed in an airtight processing container (1) by introducing a microwave to a radial line slot antenna (4). Such conditions are set that a pressure in the processing container is 7.32Pa through 8.65Pa, a microwave power is 2000W through 2300W, the distance (L1) between the substrate surface and the opposite surface of a material gas supply member (3) is 70mm through 105mm, and the distance (L2) between the substrate surface and a discharge gas supply member (2) is 100mm through 140mm. Under these conditions, a material gas consisting of cyclic C5F8 gas is activated based on the energy of the microwave. Hence, a film forming seed containing large numbers of C4F6 ions and radicals are obtained. Accordingly, a fluorine-added carbon film excellent in leak characteristics and thermal stability is formed.
Abstract translation: 通过向径向线槽天线（4）引入微波，在放置在气密处理容器（1）的基板（W）上产生等离子体。 这样的条件被设定为处理容器的压力为7.32Pa至8.65Pa，微波功率为2000W至2300W，衬底表面与材料气体供应构件（3）的相对表面之间的距离（L1）为70mm 通过105mm，衬底表面和放电气体供应构件（2）之间的距离（L2）为100mm至140mm。 在这些条件下，基于微波的能量激活由循环C5F8气体组成的原料气体。 因此，获得含有大量C 4 F 6离子和自由基的成膜种子。 因此，形成了泄漏特性和热稳定性优异的氟加成膜。
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公开(公告)号：KR100644005B1
公开(公告)日：2006-11-13
申请号：KR1020057013729
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤 , 곤도 에이이치
IPC: H01L21/205
CPC classification number: H01L21/76843 , H01L21/28556 , H01L21/76862
Abstract: 본 발명의 과제는, 반도체 장치의 제조 공정에 있어서, 초임계 상태의 매체를 이용함으로써, 고 어스펙트비의 미세한 패턴에의 Cu의 확산 방지막 및 Cu막의 매립을 가능하게 하는 것이다. 본 발명은, 상기의 과제를, 제 1 초임계 상태의 매체를 포함하는 제 1 처리 매체를 피처리 기판 상에 공급하여 기판 처리를 하는 제 1 공정과, 제 2 초임계 상태의 매체를 포함하는 제 2 처리 매체를 상기 피처리 기판 상에 공급함으로써, 상기 피처리 기판 상에 Cu 확산 방지막을 형성하는 제 2 공정과, 제 3 초임계 상태의 매체를 포함하는 제 3 처리 매체를 상기 피처리 기판 상에 공급함으로써, 상기 피처리 기판 상에 Cu막을 형성하는 제 3 공정을 갖는 것을 특징으로 하는 기판 처리 방법에 의해 해결한다.
Abstract translation: 本发明的目的，在半导体装置的制造，通过使用超临界状态的介质，以使铜扩散防止膜和Cu膜的过程被嵌入在具有高纵横比的精细图案。 本发明，包括通过提供包含第一超临界介质的第一处理介质到衬底上的第一步骤和介质的向上述问题的第二超临界条件，基板处理 第二步骤中，将要处理由处理介质供给到衬底上含有三个超临界目标衬底的至2的培养基中，所述第三处理介质，在基板上形成的薄膜Cu扩散到被处理 以及第三步骤，通过将Cu膜供应到基板上而在待处理的基板上形成Cu膜。
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公开(公告)号：KR1020040108697A
公开(公告)日：2004-12-24
申请号：KR1020047015355
申请日：2003-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02274 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/0217 , H01L21/02172 , H01L21/31604 , H01L21/31662 , H01L21/31691 , H01L28/56
Abstract: 성막 물질을 함유하는 가스, 및 희가스를 적어도 함유하는 처리 가스의 존재 하에서, 복수의 슬릿을 갖는 평면 안테나 부재를 통한 마이크로파 조사에 근거한 플라즈마를 이용하여, 전자 디바이스용 기재의 표면에 성막을 실시한다. 양호한 전기 특성을 갖는 절연막을 갖는 전자 디바이스용 기재를 형성할 수 있는 절연막을 형성할 수 있다.
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