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    스트론튬 함유 박막의 형성 방법
    1.
    发明公开
    스트론튬 함유 박막의 형성 방법 有权
    形成含薄膜的方法

    公开(公告)号：KR1020080114553A

    公开(公告)日：2008-12-31

    申请号：KR1020080059547

    申请日：2008-06-24

    Applicant: 가부시키가이샤 코준도카가쿠 켄큐쇼 ,  도쿄엘렉트론가부시키가이샤

    Inventor： 카도쿠라히데키미 ,  히가시신타로 ,  쿠보시마요시노리 ,  카와노유미코

    IPC: H01L21/20 ,  H01L21/205 ,  H01L21/316

    CPC classification number: C07F17/00

    Abstract: A manufacturing method of thin film containing strontium using raw material for forming film containing strontium oxide or strontium sulfide is provided to form a strontium containing thin film in which a content of K and Na is reduced by using CVD(Chemical Vapor Deposition) or ALD(Atomic Layer Deposition) with Sr(PrMe4Cp)2. A manufacturing method of thin film containing strontium using raw material for forming film containing strontium oxide or strontium sulfide uses a CVD(Chemical Vapor Deposition) or an ALD(Atomic Layer Deposition) with a Sr(PrMe4Cp)2, and forms a SrTiO3 film or a (Ba, Sr)TiO3 film by using the Sr(PrMe4Cp)2 as Sr supply source.

    Abstract translation: 提供使用原料形成含有氧化锶或硫化锶的薄膜的含锶薄膜的制造方法，以形成含有锶的薄膜，其中通过使用CVD（化学气相沉积）或ALD（化学气相沉积）或ALD 原子层沉积）与Sr（PrMe4Cp）2。 使用原料形成含有氧化锶或硫化锶的薄膜的含锶的薄膜的制造方法使用具有Sr（PrMe4Cp）2的CVD（化学气相沉积）或ALD（原子层沉积），形成SrTiO 3膜或 通过使用Sr（PrMe4Cp）2作为Sr供应源的（Ba，Sr）TiO 3膜。

    박막 형성 방법 및 박막 형성 장치
    2.
    发明公开
    박막 형성 방법 및 박막 형성 장치 有权
    薄膜形成方法和薄膜形成装置

    公开(公告)号：KR1020060021940A

    公开(公告)日：2006-03-08

    申请号：KR1020067001207

    申请日：2001-12-11

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 야마사키히데아키 ,  카와노유미코

    IPC: H01L21/205

    CPC classification number: C23C16/45565 ,  C23C16/0218 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/52 ,  H01J37/32935 ,  H01L21/28556 ,  H01L21/28568

    Abstract: Detection of vacuum degradation in vacuum circuit breakers has been low in detection sensitivity owing to the presence of various noises besides electric discharge. Accurate detection of vacuum degradation is made possible by detecting the continuity of electric discharge occurring between the electrode and the shield as vacuum degrades, and the duration of electric discharge. It is arranged that the continuity of electric discharge is detected as a somewhat longer period of time than one cycle time of power source frequency and the duration of electric discharge is detected as a sufficiently longer period of time than one cycle time.

    Abstract translation: 真空断路器的真空劣化检测由于除了放电之外存在各种噪声，检测灵敏度低。 通过检测在真空劣化时电极和屏蔽之间发生的放电的连续性以及放电的持续时间，可以精确地检测真空劣化。 布置为将放电的连续性检测为比电源频率的一个周期时间更长的时间段，并且将放电的持续时间检测为比一个周期时间足够长的时间段。

    반도체장치의다층배선형성방법
    5.
    发明授权
    반도체장치의다층배선형성방법 失效

    公开(公告)号：KR100373789B1

    公开(公告)日：2003-05-22

    申请号：KR1019970007286

    申请日：1997-03-05

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 카와노유미코 ,  호사카시게토시 ,  와다유이치 ,  코바야시히로시 ,  야노테츠야

    IPC: H01L21/768

    CPC classification number: H01L21/7685 ,  H01L21/2855 ,  H01L21/76847 ,  H01L21/76879 ,  H01L21/76882

    Abstract: The multilevel interconnection forming method of the present invention comprises the following. A metal film containing aluminum is deposited on an insulating film of a substrate, and the metal film is patterned, to form a wiring layer of a first layer. An interlayer dielectric film forming part of the first layer is formed on an entire surface of the substrate, such that the interlayer dielectric film covers the wiring layer from upside. A hole is formed at a predetermined position of the interlayer dielectric film such that the hole reaches the wiring layer of the first layer. Aluminum is selectively deposited and filled into the hole by a CVD method, such that the aluminum is filled at a volume ratio smaller than 100% with respect to the hole. An active metal film is formed on an entire upper surface of an interlayer dielectric film including the hole filled with the aluminum. A metal layer containing aluminum is formed on the active metal film. The metal layer is made to flow into the hole by reflowing, to completely fill the hole and to planarize the surface of the metal layer. The metal layer is subjected to be patterned, to form a wiring layer of a second layer, after the surface of the metal layer is planarized by the reflowing.

    Abstract translation: 本发明的多级互连形成方法包括以下步骤。 将包含铝的金属膜沉积在基板的绝缘膜上，并对该金属膜进行图案化，以形成第一层的布线层。 形成第一层的一部分的层间介电膜形成在基板的整个表面上，使得层间介电膜从上侧覆盖布线层。 在层间绝缘膜的预定位置处形成孔，使得该孔到达第一层的布线层。 通过CVD方法将铝选择性地沉积并填充到孔中，使得铝以相对于孔小于100％的体积比填充。 活性金属膜形成在包括填充有铝的孔的层间绝缘膜的整个上表面上。 在活性金属膜上形成含有铝的金属层。 通过回流使金属层流入孔中，以完全填充孔并平坦化金属层的表面。 在通过回流使金属层的表面平坦化之后，对金属层进行图案化，以形成第二层的布线层。

    반도체장치의다층배선형성방법
    6.
    发明公开
    반도체장치의다층배선형성방법 失效

    公开(公告)号：KR1019970067776A

    公开(公告)日：1997-10-13

    申请号：KR1019970007286

    申请日：1997-03-05

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 카와노유미코 ,  호사카시게토시 ,  와다유이치 ,  코바야시히로시 ,  야노테츠야

    IPC: H01L21/768

    Abstract: 본 발명에 따른 반도체 장치의 다층 배선 형성 방법은, 기판의 절연막상에 알루미늄을 포함하는 금속막을 퇴적시켜 패터닝함으로써 제1층의 배선층을 형성하고, 배선층을 위쪽에서 덮도록 기판상의 전면에 걸쳐, 제1층을 구성하는 층간 절연막을 형성하며, 층간 절연막의 소정의 위치에서, 제1층의 배선층에 도달하는 접속 구멍을 형성하고, 접속 구멍에 대해 100%보다도 적은 체적의 비율로 부족한 듯이 알루미늄을 CVD 법에 의해 선택적으로 퇴적시켜 매립하며, 알루미늄이 매립된 접속 구멍을 포함하는 층간 절연막의 표면 전체에 활성 금속막을 형성하고, 활성 금속막상에 알루미늄을 포함하는 금속층을 형성하며, 리플로우에 의해서 금속층을 접속 구멍내에 유입하여 접속 구멍을 완전히 묻음과 동시에 금속층의 표면을 평탄화하고, 리플로우에 의해서 금속층의 표면이 평탄화된 후, 이 금속층을 패터닝함으로써 제2층의 배선층을 형성한다.

    클러스터툴장치,대상물에알루미늄막을형성하는성막방법및가스성분제거처리장치
    8.
    发明授权
    클러스터툴장치,대상물에알루미늄막을형성하는성막방법및가스성분제거처리장치 失效
    클러스터툴장치，대상물에알루미늄막을형성하는성막방법및가스성분제거처리장치

    公开(公告)号：KR100449115B1

    公开(公告)日：2004-12-04

    申请号：KR1019960074144

    申请日：1996-12-27

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 호사카시게토시 ,  호리우치타카시 ,  야마모토히로히코 ,  타케야수노부유키 ,  카이주카타케시 ,  미주카미마사미 ,  카와노유미코 ,  이케다토울 ,  시미주사토시

    IPC: H01L21/205

    Abstract: This invention provides a clustered tool apparatus comprises a water-removal processing member chamber for heating an object to be processed by using a heater to remove water and the like adhering to the surface of the object, an oxide- film removal processing chamber for removing, by etching, a natural oxide film formed on the surface of the object W from which the water has been removed, film-formation processing chambers for performing film-formation processing on the surface of the object, a cooling processing chamber for cooling the object from the film-formation processing, and a common transfer chamber, commonly connected/disconnected to/from the water-removal processing chamber, the oxide-film removal processing chamber, the film-formation processing chambers and the cooling processing chamber 20, to loading/unloading the object.

    Abstract translation: 本发明提供了一种集群式工具装置，其包括用于通过使用加热器来加热被处理物体以去除附着在物体表面上的水等的除水处理构件室，用于除去， 通过蚀刻在被除去了水分的被处理体W的表面上形成的自然氧化膜，对被处理体表面进行成膜处理的成膜处理室，冷却被处理物的处理室 成膜处理和共同的传送室，通常与脱水处理室，氧化膜去除处理室，成膜处理室和冷却处理室20连接/分离，以将装载/ 卸载对象。

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