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公开(公告)号：KR1020020081118A
公开(公告)日：2002-10-26
申请号：KR1020020020704
申请日：2002-04-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/00
CPC classification number: H01L21/67178 , G03F7/162 , G03F7/3021 , H01L21/67069
Abstract: PURPOSE: To form a uniform air flow within the surface of a wafer in a chamber at the time of evacuating the chamber by exhausting the chamber. CONSTITUTION: The chamber 60 which can house and tightly seal the wafer W is made of a disk-shaped placing base 61 and a vertically movable cap 62. On the top of the cap 62, an exhaust pipe 67 is provided to evacuate the chamber 60. On the inside of the cap 62, is addition, a disk-shaped flow straightening plate 72 is provided. The lower surface of the plate 72 is flattened and supporting members 73 are attached to the lower surface so that the plate 72 may be placed on the placing base 61 in parallel with the upper surface of the base 61 through the members 73. The outside diameter of the flow straightening plate 72 is made a little larger than the inside diameter of the lid 62 and a plurality of vents 74 is provided in the peripheral section of the plate 72. When the chamber 60 is evacuated, the air flow flows uniformly to the peripheral section of the wafer W from the center of the surface of the wafer W.
Abstract translation: 目的：在通过排出腔室排空室时，在室内的晶片表面内形成均匀的气流。 构成：可以容纳并密封晶片W的室60由盘形放置基座61和可垂直移动的盖62制成。在盖62的顶部设置排气管67以将腔室60 另外，在盖62的内侧设有盘状的流动矫正板72。 板72的下表面变平，并且支撑构件73附接到下表面，使得板72可以通过构件73与基座61的上表面平行地放置在放置基座61上。外径 流动矫直板72的尺寸略大于盖62的内径，并且在板72的周边部分设置有多个通风口74.当室60抽空时，空气流均匀流动到 从晶片W的表面的中心的晶片W的周边部分。
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公开(公告)号：KR1020020081117A
公开(公告)日：2002-10-26
申请号：KR1020020020703
申请日：2002-04-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/6715 , B05D3/0466 , B05D3/0486 , G03F7/162
Abstract: PURPOSE: A method and system for processing substrate are provided to secure interface uniformity in the film thickness of an application film, even if the application processing of a wafer is performed by using the application liquid of high viscosity by the point which is the so-called 'one- stroke' writing. CONSTITUTION: A method and system for processing substrate comprises coating a coating solution on a surface of the substrate(w) while relatively moving a coating solution discharge nozzle and the substrate and discharging the coating solution onto the substrate from the coating solution discharge nozzle, exposing the substrate to a solvent atmosphere of the coating solution after the step of coating, and reducing pressure inside a container in which the substrate is housed after the step of exposing.
Abstract translation: 目的：提供用于处理基板的方法和系统，以确保涂膜的膜厚度的界面均匀性，即使通过使用高粘度的涂布液进行晶片的涂布处理， 称为“中风”写作。 构成：用于处理基材的方法和系统包括在使涂布液排出喷嘴和基材相对移动并将涂布溶液从涂布液排出喷嘴排出到基板上的同时，在基材表面上涂布涂布液（w） 在涂布步骤之后，将基底涂布到涂布溶液的溶剂气氛中，并且在曝光步骤之后降低其中容纳基材的容器内的压力。
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Patent Agency Ranking
公开(公告)号：KR1020010062438A
公开(公告)日：2001-07-07
申请号：KR1020000076707
申请日：2000-12-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/6715 , B05C11/08 , G03F7/16 , G03F7/162 , H01L21/67109
Abstract: PURPOSE: A film forming device is provided to form a coating film of a prescribed thickness even on the outer edge of a substrate by adjusting the temperature of the coating liquid applied to the outer edge. CONSTITUTION: A heating and cooling member(64) having a ring-like shape corresponding to the shape of a wafer(W) is installed so as to surround a mounting table(61), on which the wafer(W) is mounted. This heating and cooling member(64) is heated or cooled to a prescribed temperature by a Peltier element, and is brought into contact with the wafer(W) from below to heat or cool the rim of the wafer(W). As a result, when the rim is heated, the temperature of the resist liquid applied afterward is increased, and the surface tension of the resist liquid is decreased. When it is cooled, the surface tension of the resist liquid is increased. Thereby the thickness of the resist film at the rim of the wafer(W) can be adjusted to form a prescribed resist film.
Abstract translation: 目的：提供一种成膜装置，通过调节施加到外边缘的涂布液的温度，即使在基板的外边缘上形成规定厚度的涂膜。 构成：安装有与晶片（W）的形状相对应的环状形状的加热冷却部件（64），围绕安装有晶片（W）的安装台（61）。 该加热和冷却构件（64）通过珀尔帖元件被加热或冷却至规定温度，并从下方与晶片（W）接触以加热或冷却晶片（W）的边缘。 结果，当边缘被加热时，随后施加的抗蚀剂液体的温度升高，并且抗蚀剂液体的表面张力降低。 当冷却时，抗蚀剂液体的表面张力增加。 由此，可以调节晶片边缘处的抗蚀剂膜的厚度（W），以形成规定的抗蚀剂膜。
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公开(公告)号：KR100798659B1
公开(公告)日：2008-01-29
申请号：KR1020020020704
申请日：2002-04-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/00
CPC classification number: H01L21/67178 , G03F7/162 , G03F7/3021 , H01L21/67069
Abstract: 본 발명은 기판을 처리하는 처리장치에 관한 것으로서, 기판을 수용하고 기체가 통하지 않도록 폐쇄가능한 처리실을 형성하는 챔버와, 처리실의 분위기를 상기 챔버의 상부로부터 배기하여 처리실을 감압시키기 위한 배기부를 갖고 있다. 본 발명은 감압할 때에 처리실 내에 형성되는 기류를 제어하는 정류판을 갖고 챔버는 기판을 재치하는 재치대와, 재치대상의 기판을 상방에서 덮고 상기 재치대와 일체가 되게 처리실을 형성하는 하면이 개구된 대략 원통형상의 개체와, 정류판을 재치대에 대해 평행하게 되도록 지지하는 지지부재를 갖는다. 본 발명에 따르면 정류판과 기판간에 흐르는 기류의 속도가 기판면내에서 균일해지므로 기판상의 도포막을 건조시킬 때에 막두께가 균일하게 평탄해지는 기술이제시된다.
Abstract translation: 本发明具有涉及一种处理设备，用于处理衬底，其包括：容纳所述衬底和所述腔室，并从形成的可封闭的处理室中，使得所述气体通过所述腔室的部分排气进行减压处理室的上部排出处理室的气氛 。 开口时，本发明是当减压具有用于控制在工艺腔室所形成的腔室，以覆盖上述载置台的气流的整流板，和用于在上述的形成所述安装台与积分的安装衬底的安装目标基板是成为处理室 以及用于支撑整流板以与安装台平行的支撑构件。 在根据本发明通过当前板呈现，因此在基片平面均匀的涂膜厚度在基片之间流动的流量变得均匀时在衬底上的平面状的干燥技术膜。
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公开(公告)号：KR100855364B1
公开(公告)日：2008-09-04
申请号：KR1020020020703
申请日：2002-04-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/6715 , B05D3/0466 , B05D3/0486 , G03F7/162
Abstract: 본 발명은 기판을 처리하는 처리방법에 관한 것으로, 도포액 토출노즐과 기판을 상대적으로 이동시키면서 노즐을 통해 기판상에 도포액을 토출하고 기판표면에 도포액을 도포하는 공정을 갖는다. 그 후 기판을 도포액의 용제분위기에 쬐거나 또는 용기내에서 일단 가압하고나서 기판이 수용된 용기내를 감압하여 기판상의 도포액을 건조시킨다. 본 발명에 따르면 제품화되지 않은 기판 주연부의 소위 엣지컷폭의 협소화를 도모하면서 도포막의 면내 균일성을 유지할 수 있는 처리방법이 제시된다.
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公开(公告)号：KR1020020075295A
公开(公告)日：2002-10-04
申请号：KR1020020015651
申请日：2002-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/6715
Abstract: PURPOSE: A coater and coating method of a substrate are provided to ensure flatness of resist liquid while suppressing evaporation of the solvent in the resist liquid on a wafer when the wafer is coated with the resist liquid with one stroke. CONSTITUTION: Covers(75,76) covering a wafer(W) are disposed in an enclosure where coating of resist liquid is carried out. A resist liquid ejection nozzle(85) movable horizontally in the direction perpendicular to the advancing direction of the wafer(W), i.e., the X direction, is disposed between the covers(75,76). The cover(75) is supported, on the ejection nozzle(85) side, by a supporting member(77) and, on the forward side in the X direction, by a supporting member(78). At the time of coating, the supporting member(77) is elevated for a specified distance and the cover(75) is inclined. Since the gap between the cover(75) on the ejection nozzle(85) side and the wafer(W) is widened, shearing stress acting onto the surface of a resist film is reduced when the wafer W moves in the X direction immediately after coating resist.
Abstract translation: 目的：提供一种基板的涂布机和涂布方法，以在晶片用一次冲击的抗蚀剂液体涂覆的同时，抑制晶片上的抗蚀剂液体中的溶剂的蒸发，从而确保抗蚀剂液体的平坦度。 构成：覆盖晶片（W）的盖（75,76）设置在执行抗蚀剂液体涂覆的外壳中。 在盖（75,76）之间设置有能够沿垂直于晶片（W）的前进方向的方向（即X方向）水平移动的抗蚀剂喷液嘴85。 盖（75）通过支撑构件（77）在喷嘴（85）侧支撑，并且在X方向的前侧由支撑构件（78）支撑。 在涂布时，支撑构件（77）升高一定距离，盖（75）倾斜。 由于喷嘴（85）侧的盖（75）与晶片（W）之间的间隙变宽，当晶片W在涂覆后立即沿X方向移动时，作用在抗蚀剂膜的表面上的剪切应力减小 抗。
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公开(公告)号：KR1020010051730A
公开(公告)日：2001-06-25
申请号：KR1020000067985
申请日：2000-11-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/6715 , B05D1/005 , G03F7/162
Abstract: PURPOSE: To provide an apparatus for forming a uniform resist film even at the outer edge of a substrate by regulating a coating amount on the edge of the substrate. CONSTITUTION: A base 6 for mounting a wafer W is linearly movable along a rail 63. A nozzle 65 for discharging a resist liquid is movable along the rail 68. Suction nozzles 72, 73 are respectively provided at two mask members 70, 71. When he nozzle 65 arrives at the outer edge of the wafer W discharging a resist liquid, the liquid before arriving at the surface of the wafer W is sucked by nozzles 72, 73 immediately after discharging.
Abstract translation: 目的：通过调节基板的边缘上的涂布量，提供即使在基板的外缘形成均匀的抗蚀剂膜的装置。 构成：用于安装晶片W的基座6可沿导轨63线性移动。用于排出抗蚀剂液体的喷嘴65可沿导轨68移动。吸入喷嘴72,73分别设置在两个掩模构件70,71上。当 喷嘴65到达排出抗蚀剂液体的晶片W的外边缘，在到达晶片W的表面之前的液体在排出后立即被喷嘴72和73吸入。
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