公开(公告)号：KR100725113B1

公开(公告)日：2007-06-04

申请号：KR1020050119254

申请日：2005-12-08

Applicant: 삼성전자주식회사

Inventor： 김국주 ,  전필권 ,  황동원 ,  고용균

IPC: H01L21/02 ,  H01L21/66

Abstract: A method of manufacturing a particle adsorbed sample wafer is provided to obtain a substrate with uniformly adsorbed particles by preventing the deposition or agglomeration of particle powder in a particle solution using an ultrasonic treatment. A particle solution(14) is formed by adding particle powder(10) into a predetermined solvent(12), wherein the predetermined solvent contains isopropyl alcohol of 0.5 to 10 volume%, hydrogen peroxide of 0.5 to 10 volume% and water. An ultrasonic treatment is performed on the particle solution. A wafer(18) is dipped into the particle solution in order to adsorb particles. Then, a drying process is performed on the wafer. The ultrasonic treatment is performed for 1 to 30 minutes.

Abstract translation: 提供一种制造颗粒吸附样品晶片的方法，以通过使用超声波处理防止颗粒粉末在颗粒溶液中的沉积或附聚来获得具有均匀吸附颗粒的基材。 通过将颗粒粉末（10）加入到预定溶剂（12）中形成颗粒溶液（14），其中预定溶剂包含0.5-10体积％的异丙醇，0.5-10体积％的过氧化氢和水。 对颗粒溶液进行超声波处理。 晶片（18）浸入颗粒溶液中以吸附颗粒。 然后，在晶片上进行干燥处理。 超声波处理进行1至30分钟。

公开(公告)号：KR100655647B1

公开(公告)日：2006-12-08

申请号：KR1020050059768

申请日：2005-07-04

Applicant: 삼성전자주식회사

Inventor： 김세연 ,  전필권 ,  박정대 ,  한명옥 ,  김재욱 ,  채승기 ,  김국주 ,  이재석 ,  고용균 ,  임광신 ,  이양구

IPC: H01L21/304

Abstract: A cleaning composition for a semiconductor substrate is provided to remove polymer without damaging a conductive structure in cleaning a substrate with the conductive structure by including an organic ammonium fluoride aqueous solution, a buffer agent and an anti-corrosion agent. A cleaning composition for a semiconductor substrate is fabricated which includes an organic fluoride ammonium aqueous solution of 80-99.8999 weight percent, a buffer agent of 0.1~5 weight percent and an anti-corrosion agent of 0.0001~15 weight percent(S110). The organic fluoride ammonium aqueous solution includes an alkylammonium compound, a fluoride compound and deionized water. The anti-corrosion agent includes at least an alkanesulphonic acid-based compound. By using the cleaning composition with respect to the semiconductor substrate having a conductive structure with polymer residue, the polymer, the organic fluoride ammonium aqueous solution and the buffer agent are reacted to remove the polymer. An anti-corrosion layer is formed on the conductive structure(S120). The semiconductor substrate is rinsed(S130). The semiconductor substrate is dried(S140).

Abstract translation: 提供一种用于半导体基板的清洁组合物，其通过包含有机氟化铵水溶液，缓冲剂和防腐蚀剂来在用导电结构清洁基板时去除聚合物而不损坏导电结构。 制备用于半导体衬底的清洁组合物，其包含80-99.8999重量％的有机氟化铵铵水溶液，0.1-5重量％的缓冲剂和0.0001-15重量％的防腐蚀剂（S110）。 有机氟化铵铵水溶液包括烷基铵化合物，氟化物和去离子水。 防腐蚀剂至少包含烷烃磺酸类化合物。 通过对具有导电结构的半导体基板使用具有聚合物残渣的清洁组合物，聚合物，有机氟化铵铵水溶液和缓冲剂反应以除去聚合物。 在导电结构上形成防腐蚀层（S120）。 冲洗半导体衬底（S130）。 将半导体衬底干燥（S140）。

公开(公告)号：KR101742176B1

公开(公告)日：2017-05-31

申请号：KR1020110009334

申请日：2011-01-31

Applicant: 삼성전자주식회사

Inventor： 김국주 ,  김진호 ,  채승기 ,  전필권 ,  박선희 ,  변경은

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 반도체소자및 그제조방법에서, 기판상에제1 층간절연막을형성한다. 상기제1 층간절연막을관통하여제1 연결배선을형성한다. 상기제1 층간절연막상에식각저지막및 제2 층간절연막을형성한다. 또한, 상기제2 층간절연막및 식각저지막을관통하여, 상기제1 연결배선과전기적으로접촉하는제2 연결배선과, 상기제2 연결배선들사이에배치되고전기적으로고립된더미패턴을형성한다.

Abstract translation: 在半导体器件及其制造方法中，第一层间绝缘膜形成在基板上。 并且穿过第一层间绝缘膜形成第一连接布线。 蚀刻停止膜和第二层间绝缘膜形成在第一层间绝缘膜上。 第二连接布线，其贯穿第二层间绝缘膜和蚀刻停止膜并且与第一连接布线电接触;以及电绝缘虚设图案，其设置在第二连接布线之间。

公开(公告)号：KR1020090038972A

公开(公告)日：2009-04-22

申请号：KR1020070104310

申请日：2007-10-17

Applicant: 삼성전자주식회사

Inventor： 황동원 ,  김국주 ,  이양구 ,  이헌정

IPC: H01L21/28

CPC classification number: H01L27/10814 ,  H01L21/31111 ,  H01L21/76804 ,  H01L27/10817 ,  H01L27/10855

Abstract: A method for forming a contact hole and a manufacturing method of a semiconductor memory device using the same are provided to form a contact hole of a fixed size by alternatively flowing an etching solution and deionized water in a surface of a substrate. A device isolation film(50) is formed on a substrate(60). A plurality of transistors(62) is formed inside an active region. A gate insulation film(64) is formed on the substrate by a thermal oxidation method. A gate electrode(66) is formed on a front surface of the substrate with a poly silicone film. A gate top insulation film(68) is formed on the front surface of the substrate. A first dopant region(72) and a second dopant region(74) are formed on a source/drain region. A first interlayer insulation film(76) is formed on the substrate. A first contact hole is formed by removing the first interlayer insulation film. A pad electrode(80) is formed inside the first contact hole. A second interlayer insulation film(82) is formed on the front surface of the substrate. A second contact hole is formed by removing the second interlayer insulation film. A silicone oxide film is formed on the substrate. A dummy contact hole(92) is formed by etching the silicone oxide film. A contact hole is formed by alternatively flowing etching solution and deionized water in the dummy contact hole.

Abstract translation: 提供一种用于形成接触孔的方法和使用其的半导体存储器件的制造方法，以通过交替地在基板的表面中流动蚀刻溶液和去离子水来形成固定尺寸的接触孔。 在基板（60）上形成器件隔离膜（50）。 多个晶体管（62）形成在有源区域内。 通过热氧化法在基板上形成栅绝缘膜（64）。 栅极电极（66）用聚硅氧烷膜形成在基板的前表面上。 在基板的前表面上形成栅绝缘膜（68）。 在源/漏区上形成第一掺杂区（72）和第二掺杂区（74）。 在基板上形成第一层间绝缘膜（76）。 通过去除第一层间绝缘膜形成第一接触孔。 在第一接触孔内形成焊盘电极（80）。 在基板的前表面上形成第二层间绝缘膜（82）。 通过去除第二层间绝缘膜形成第二接触孔。 在基板上形成氧化硅膜。 通过蚀刻氧化硅膜形成虚拟接触孔（92）。 在虚拟接触孔中交替地流动蚀刻溶液和去离子水形成接触孔。

公开(公告)号：KR1020120088175A

公开(公告)日：2012-08-08

申请号：KR1020110009334

申请日：2011-01-31

Applicant: 삼성전자주식회사

Inventor： 김국주 ,  김진호 ,  채승기 ,  전필권 ,  박선희 ,  변경은

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A semiconductor element and a manufacturing method thereof are provided to prevent the defect of the semiconductor element due to moisture and gas of an inner film by increasing discharging paths of moisture and gas. CONSTITUTION: A first interlayer insulating film(14) is formed on a substrate(10). A first conductive pattern(20) and a second interlayer insulating film(22) are formed on the first interlayer insulating film. A second conductive pattern(28) is formed on the second interlayer insulating film. A third interlayer insulating film(30) is formed in the gap between the second conductive patterns.

Abstract translation: 目的：提供半导体元件及其制造方法，以通过增加水分和气体的排放路径来防止由于内膜的湿气和气体导致的半导体元件的缺陷。 构成：在衬底（10）上形成第一层间绝缘膜（14）。 第一导电图案（20）和第二层间绝缘膜（22）形成在第一层间绝缘膜上。 第二导电图案（28）形成在第二层间绝缘膜上。 第三层间绝缘膜（30）形成在第二导电图案之间的间隙中。

公开(公告)号：KR100741991B1

公开(公告)日：2007-07-23

申请号：KR1020060059054

申请日：2006-06-29

Applicant: 삼성전자주식회사 ,  제일모직주식회사

Inventor： 황동원 ,  김국주 ,  라정인 ,  전필권 ,  채승기 ,  이양구

IPC: C09K13/08 ,  C09K13/06

Abstract: Provided are a silicon oxide etching solution, which is able to etch silicon oxide easily while minimizing damage to metal silicide, and a method of forming a contact hole using the etching solution, which prevents damage to the metal silicide. The silicon oxide etching solution is applied to a process for enlarging the width of a contact hole(30) formed on an oxide film(20) covering a metal silicide pattern, and comprises 0.01-2wt% of ammonium bifluoride, 2-35wt% of an organic acid, 0.05-1wt% of an inorganic acid, and an excess of a low polar organic solvent. The silicone oxide film(20) includes a BPSG oxide film(22) and a high density plasma silicon oxide film(24). The silicon oxide etching solution has an etching selectivity for the high density plasma oxide film(24) and the BPSG oxide film(22) of 1:1.2-2.5.

Abstract translation: 本发明提供一种能够在使金属硅化物的损伤最小化的同时容易地蚀刻氧化硅的氧化硅蚀刻液以及使用该蚀刻液形成接触孔的方法，该方法防止金属硅化物的损伤。 该氧化硅蚀刻溶液被应用于用于扩大在覆盖金属硅化物图案的氧化物膜（20）上形成的接触孔（30）的宽度的工艺，并且包含0.01-2wt％的氟化氢铵，2-35wt％的 有机酸，0.05-1重量％的无机酸和过量的低极性有机溶剂。 氧化硅膜（20）包括BPSG氧化物膜（22）和高密度等离子体氧化硅膜（24）。 氧化硅蚀刻溶液对于高密度等离子体氧化物膜（24）和BPSG氧化物膜（22）具有1：1.2-2.5的蚀刻选择性。