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公开(公告)号：KR100846635B1
公开(公告)日：2008-07-16
申请号：KR1020070029168
申请日：2007-03-26
Applicant: 삼성전자주식회사
CPC classification number: H01J37/21 , H01J37/222 , H01J37/28 , H01J2237/216
Abstract: A method for adjusting a focal point of a scanning electron microscope is provided to accurately detect a size of a pattern formed on a subject by obtaining an accurate image of the subject. A scanning electron microscope includes a stage(10) for a subject(30), an inspection member, and an auto-focusing member. The inspection member includes a lens assembly(22), a detector(24), and an ADC(Analog Digital Converter)(26). The lens assembly includes an electron gun, a focusing lens, a deflection coil, an objective lens, and an auxiliary coil. The detector detects secondary electrons, which are generated by a surface reaction due to accelerated electrons on a surface of the subject. The ADC converts the signal from the detector into a digital signal.
Abstract translation: 提供了一种用于调整扫描电子显微镜的焦点的方法，通过获得对象的准确图像来精确地检测形成在被摄体上的图案的尺寸。 扫描电子显微镜包括用于被检体（30）的台（10），检查部件和自动聚焦部件。 检查构件包括透镜组件（22），检测器（24）和ADC（模数转换器）（26）。 透镜组件包括电子枪，聚焦透镜，偏转线圈，物镜和辅助线圈。 检测器检测由于受试者表面上的加速电子而由表面反应产生的二次电子。 ADC将来自检测器的信号转换为数字信号。
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公开(公告)号：KR1020080000303A
公开(公告)日：2008-01-02
申请号：KR1020060058003
申请日：2006-06-27
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01N21/9503 , G01N21/8422 , G01N2021/8433
Abstract: A method of detecting defects in a silicon substrate and an apparatus for performing the same are provided to identify grating defects of a silicon wafer by using a light emitting image of fluorescent materials. A silicon wafer(W) is loaded on a chuck(110) within a process chamber(100). An edge part of the silicon wafer is coated by using fluorescent materials having different coating characteristics at a defective grating part and a normal grating part of the silicon wafer. A light emitting image of a silicon wafer edge part is obtained by irradiating light onto the silicon wafer edge part coated with the fluorescent materials. A grating defect of the silicon wafer edge part is detected by identifying a coating state of the fluorescent materials of the light emitting image.
Abstract translation: 提供了一种检测硅衬底中的缺陷的方法及其执行装置，以通过使用荧光材料的发光图像来识别硅晶片的光栅缺陷。 硅晶片（W）装载在处理室（100）内的卡盘（110）上。 通过使用在硅晶片的缺陷光栅部分和普通光栅部分处具有不同涂层特性的荧光材料来涂覆硅晶片的边缘部分。 通过将光照射到涂覆有荧光材料的硅晶片边缘部分上来获得硅晶片边缘部分的发光图像。 通过识别发光图像的荧光材料的涂布状态来检测硅晶片边缘部分的光栅缺陷。
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公开(公告)号：KR101443058B1
公开(公告)日：2014-09-24
申请号：KR1020080059983
申请日：2008-06-25
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01N21/3563 , G01J3/447 , G01J4/00 , G01N21/9501 , H01L22/12
Abstract: 본 발명은 생산성을 증대 또는 극대화할 수 있는 막질 디멘젼 분석에서의 반도체 제조설비 및 그의 제조방법을 개시한다. 그의 방법은 먼저, 선행되는 반도체 제조공정이 완료된 레퍼런스 기판에서 레퍼런스 스펙트럼 및 레퍼런스 프로파일을 획득하고, 상기 레퍼런스 스펙트럼과 레퍼런스 프로파일간의 관계를 이용하여 소정의 함수를 산출해 낸다. 후속에서 상기 레퍼런스 기판과 동일 또는 유사한 반도체 제조공정이 완료된 실제 계측대상인 실측 기판의 표면에서 실시간으로 검출되는 스펙트럼을 변수로 하여 상기 함수의 해를 구함으로서 실시간으로 프로파일을 획득하기 때문에 생산성을 향상시킬 수 있다.
스펙트럼(spectrum), 프로파일(profile), 레퍼런스(reference), 실시간, 함수(function)-
公开(公告)号：KR1020100000468A
公开(公告)日：2010-01-06
申请号：KR1020080059983
申请日：2008-06-25
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01N21/3563 , G01J3/447 , G01J4/00 , G01N21/9501 , H01L22/12
Abstract: PURPOSE: An equipment for manufacturing a semiconductor device analyzed layered media dimension and used the same are provided to calculate a complex three-dimensional pattern by obtaining a profile corresponding to a solution of a function. CONSTITUTION: A semiconductor substrate to be processed through a semiconductor manufacturing process(S10). A reference spectrum and reference profile from a substrate which is determined as a reference substrate is detected(S20). A function related to the function of the reference spectrum and reference profile is extracted(S30). A real-time spectrum of the fixed substrate is detected from the substrates. The profile of the substrate to be processed in a semiconductor manufacturing process is detected in real time by applying a real-time spectrum valuable to the function(S40).
Abstract translation: 目的：提供一种用于制造分析分层介质尺寸并使用它的半导体器件的设备，以通过获得与功能的解决方案相对应的轮廓来计算复杂的三维图案。 构成：通过半导体制造工艺处理的半导体衬底（S10）。 检测来自确定为参考基板的基板的参考光谱和参考分布（S20）。 提取与参考频谱和参考曲线的功能相关的功能（S30）。 从基板检测固定基板的实时光谱。 通过应用对功能有价值的实时光谱，实时地检测半导体制造工艺中待处理衬底的轮廓（S40）。
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