公开(公告)号：KR101208408B1

公开(公告)日：2012-12-05

申请号：KR1020100126851

申请日：2010-12-13

Applicant: 삼성전자주식회사

Inventor： 임용호 ,  이주현 ,  이진석 ,  박영민

IPC: H01L21/205 ,  H01L21/3065

Abstract: 본발명은플라즈마처리장치에관한것으로, 특히상부전극부가분리가능하여설비유지보수를용이하게할 수있는플라즈마처리장치에관한것이다. 본발명에따른플라즈마처리장치는플라즈마처리공정이진행되는공정챔버와, 공정챔버내측에마주보도록설치되는상부전극부및 하부전극부을포함하는플라즈마처리장치에있어서, 상부전극부는상부판, 상부판을통해전원이인가되며가스분사를위한다수의통공이형성된가스분사판과, 상부판과가스분사판을착탈가능하게하는전원인가부를포함하는것을특징으로한다.

公开(公告)号：KR1020090014732A

公开(公告)日：2009-02-11

申请号：KR1020070078905

申请日：2007-08-07

Applicant: 삼성전자주식회사

Inventor： 정화준 ,  이재봉 ,  김정욱 ,  임용호

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32495

Abstract: A plasma etching apparatus is provided to allow a user to exchange or repair only a liner member in which problem is generated by several liner members which are mutually separated to protect the inner wall of the process chamber. The plasma-etching apparatus comprises the chamber body(10), the upper electrode(40), and the bottom electrode(30) and wall liner(50). It has the process chamber in which the process gas is injected the chamber body. A plasma etching apparatus includes a chamber body, an upper electrode, a bottom electrode and wall liner. The chamber body has a process chamber into which the process gas is injected. The upper electrode is installed on the top of the chamber body, and the bottom electrode is installed in the lower part of the chamber body. The wall liner protects the inner wall of the chamber body while being installed inside the chamber body. The wall liner is composed of a plurality of liner members(51) which is capable of being mutually separated.

Abstract translation: 提供了一种等离子体蚀刻装置，以允许使用者仅仅更换或修理其中相互分离以保护处理室的内壁的多个衬套构件产生问题的衬垫构件。 等离子体蚀刻装置包括室主体（10），上电极（40）以及底电极（30）和壁衬（50）。 它具有处理室，其中处理气体注入室体。 等离子体蚀刻装置包括室主体，上电极，底电极和壁衬。 腔体具有处理室，注入工艺气体。 上电极安装在室主体的顶部，底电极安装在腔体的下部。 壁衬套在安装在腔室内部的同时保护腔室主体的内壁。 壁衬由多个可相互分离的衬垫构件（51）组成。

公开(公告)号：KR1020170143068A

公开(公告)日：2017-12-29

申请号：KR1020160075871

申请日：2016-06-17

Applicant: 삼성전자주식회사

Inventor： 김학영 ,  홍정표 ,  선종우 ,  성덕용 ,  임용호 ,  전윤광 ,  정화준

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32458 ,  H01J2237/334 ,  H01L21/67069

Abstract: 본발명의예시적실시예에따른플라즈마처리장치는, 챔버; 상기챔버의상부에배치되며, 체결홀을갖는윈도우플레이트; 복수의노즐을가지며상기체결홀에체결되는몸체부, 상기몸체부에서방사상으로연장되어상기윈도우플레이트의저면을부분적으로가리는플렌지부를갖는인젝터; 및상기윈도우플레이트의상면에서상기몸체부와체결되어상기인젝터가상기체결홀에서빠지는것을방지하는스토퍼;를포함할수 있다.

Abstract translation: 根据本发明示例性实施例的等离子体处理设备包括腔室; 设置在腔室顶部的窗板，窗板具有紧固孔; 1。一种喷射器，其特征在于，具有：主体部，其具有多个喷嘴并被紧固于所述紧固孔;以及凸缘部，其从所述主体部沿径向延伸，以部分地覆盖所述窗板的底面; 并且在窗板的上表面处固定到本体上的塞子以防止喷射器从紧固孔脱落。

公开(公告)号：KR1020170009447A

公开(公告)日：2017-01-25

申请号：KR1020150101519

申请日：2015-07-17

Applicant: 삼성전자주식회사

Inventor： 첸싱롱 ,  리우달리 ,  장성호 ,  임용호

IPC: H01L21/687

CPC classification number: H01L21/68728

Abstract: 웨이퍼클램핑장치가제공된다. 상기웨이퍼클램핑장치는, 웨이퍼의하부에배치되고, 상기웨이퍼를지지하는복수개의서포트핀(pin), 및상기웨이퍼의측부에배치되고, 상기웨이퍼의측부에직접접촉하여상기웨이퍼를가압하는사이드클램프를포함하고, 상기사이드클램프는, 제1 방향또는제2 방향으로상기웨이퍼를가압하고, 상기제1 방향과상기제2 방향은서로다른방향이다.

Abstract translation: 一种晶片夹持装置，包括在晶片下方的多个支撑销，所述多个销支撑晶片; 以及在所述晶片的横向侧的侧夹具，所述侧夹具直接接触所述晶片的侧面以按压所述晶片，所述侧夹具将所述晶片沿第一方向或第二方向按第一方向和所述第二方向 第二个方向是不同的方向。

公开(公告)号：KR1020120071019A

公开(公告)日：2012-07-02

申请号：KR1020100132594

申请日：2010-12-22

Applicant: 삼성전자주식회사

Inventor： 임용호 ,  이주현 ,  박영민

IPC: H05H1/24 ,  B01J19/08

CPC classification number: H01J37/32513 ,  H01J37/32009 ,  H01J37/32798 ,  H01J37/32825 ,  H05H1/24

Abstract: PURPOSE: A plasma processing apparatus is provided to reduce mechanical abrasion and malfunction by reducing time and man power required in a maintenance and repair process. CONSTITUTION: A plasma processing apparatus includes a chamber(13) for plasma processing and a base(12) including a gas distribution plate(120) and a shower head(121). The plasma processing apparatus includes a housing(11) including an upper part(110), automatic rotation apparatuses(10a,10b), and a switch(104) operating the automatic rotation apparatuses within an automatic connection apparatus. An upper electrode is composed of the base and the housing. The upper electrode is connected to a gas supply part supplying a RF(Radio Frequency) power source and process gas. A lock-base is attached to an upper outer wall of the base.

Abstract translation: 目的：提供等离子体处理装置，通过减少维护和修理过程中所需的时间和人力来减少机械磨损和故障。 构成：等离子体处理装置包括用于等离子体处理的室（13）和包括气体分配板（120）和淋浴喷头（121）的底座（12）。 等离子体处理装置包括在自动连接装置内包括操作自动旋转装置的上部部件（110），自动旋转装置（10a，10b）和开关（104）的壳体（11）。 上电极由基座和壳体组成。 上电极连接到提供RF（射频）电源和处理气体的气体供应部分。 锁底座附接到基座的上外壁。

公开(公告)号：KR1020110083832A

公开(公告)日：2011-07-21

申请号：KR1020100003772

申请日：2010-01-15

Applicant: 삼성전자주식회사

Inventor： 이진석 ,  이주현 ,  김수홍 ,  김정욱 ,  신준철 ,  전윤광 ,  임경춘 ,  임용호

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4557 ,  C23C16/45572 ,  H01J37/32532 ,  H01L21/67109

Abstract: PURPOSE: A plasma processing apparatus is provided to constantly maintain the etching and depositing property of a substrate by adopting a heater unit which highly maintains the temperature of a top electrode unit. CONSTITUTION: A plasma processing device includes a top electrode unit(100) and a bottom electrode unit which face each other in a process chamber. The top electrode unit includes a gas spray plate(160) and a heater unit(130). The heater unit heats the top electrode unit. The gas spray plate includes a plurality of through holes for spraying gas. The heater unit is bonded with the gas spray plate with soldering.

Abstract translation: 目的：提供一种等离子体处理装置，通过采用高度保持顶部电极单元的温度的加热器单元来恒定地保持基板的蚀刻和沉积性能。 构成：等离子体处理装置包括在处理室中彼此面对的顶部电极单元（100）和底部电极单元。 顶部电极单元包括气体喷射板（160）和加热器单元（130）。 加热器单元加热顶部电极单元。 气体喷射板包括用于喷射气体的多个通孔。 加热器单元通过焊接与气体喷射板接合。

公开(公告)号：KR1020120065625A

公开(公告)日：2012-06-21

申请号：KR1020100126851

申请日：2010-12-13

Applicant: 삼성전자주식회사

Inventor： 임용호 ,  이주현 ,  이진석 ,  박영민

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32605 ,  H01J37/3288

Abstract: PURPOSE: A plasma processing device is provided to facilitate maintenance and repair processes by separating a top electrode unit. CONSTITUTION: A top electrode unit(10) includes a top plate(11), a gas spray plate(12), and a power applying unit(30). A heater installing unit(14) includes a heater for heating a top electrode unit. A shower head(13) is combined with the lower side of the gas spraying plate for spraying gas. A bolt(35) passes through a bolt hole(35a) of a first connector(31) and is combined with the combination groove of the top plate. A protrusion unit(31a) of the first connector is combined with a groove unit(32a) of a second connector.

Abstract translation: 目的：提供等离子体处理装置，以通过分离顶部电极单元来促进维护和修复过程。 构成：顶部电极单元（10）包括顶板（11），气体喷射板（12）和电力施加单元（30）。 加热器安装单元（14）包括用于加热顶部电极单元的加热器。 淋浴头（13）与用于喷射气体的气体喷射板的下侧结合。 螺栓（35）穿过第一连接器（31）的螺栓孔（35a）并与顶板的组合槽组合。 第一连接器的突出单元（31a）与第二连接器的槽单元（32a）组合。