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Patent Agency Ranking
公开(公告)号：KR1020110005171A
公开(公告)日：2011-01-17
申请号：KR1020090062738
申请日：2009-07-09
Applicant: 삼성전자주식회사
IPC: G01R29/08 , G01R31/3183
CPC classification number: G01R29/08 , G01R23/16 , G01R31/3183
Abstract: PURPOSE: An RF performance inspection apparatus and an inspection method thereof are provided to shorten the RF performance inspection time. CONSTITUTION: An RF signal generator(20) generates the RF signal. An RF signal analyzer(30) analyzes the RF signal. A controller(10) sets the inspection pattern for the RF performance inspection on an object to be inspected. A plurality of monitoring signals is generated in batch based on the set inspection pattern.
Abstract translation: 目的：提供射频性能检测装置及其检查方法，以缩短射频性能检查时间。 构成：RF信号发生器（20）产生RF信号。 RF信号分析器（30）分析RF信号。 控制器（10）对要检查的对象设置用于RF性能检查的检查图案。 基于设定的检查图案批量生成多个监视信号。
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公开(公告)号：KR1020140111110A
公开(公告)日：2014-09-18
申请号：KR1020130024211
申请日：2013-03-07
Applicant: 삼성전자주식회사
CPC classification number: G06F11/2294
Abstract: An automated test equipment includes at least one or more test clients for being inputted with a test request of each of at least one worker and displaying a test response; at least one or more test sites for testing at least one or more DUTs; and a test server which communicates with the test clients and the test sites through a network, and performs segmentation driving of the test sites in response to the test request of the test clients, and delivers responses of the test sites to the test clients. Therefore, more than two workers can interface test request at the same time independently with each other, and can test different DUTs through different test sites respectively.
Abstract translation: 自动测试设备包括至少一个或多个测试客户端，用于输入至少一个工作人员的测试请求并显示测试响应; 用于测试至少一个或多个DUT的至少一个或多个测试点; 以及通过网络与测试客户端和测试站点进行通信的测试服务器，并根据测试客户端的测试请求对测试站点进行分段驱动，并将测试站点的响应传递给测试客户端。 因此，两名以上的工作人员可以同时独立接口测试请求，并可以通过不同的测试站点分别测试不同的DUT。
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公开(公告)号：KR100444588B1
公开(公告)日：2004-08-16
申请号：KR1020020070121
申请日：2002-11-12
Applicant: 삼성전자주식회사
IPC: H01L21/84
CPC classification number: B81C1/00087 , H01L21/486 , H01L23/13 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a via hole through a glass wafer includes depositing a material layer (110) on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer (200), forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole (130), eliminating any remaining patterning material (120) used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole (130) is etched to form a via hole (130') having a smooth surface and extending through the glass wafer, and eliminating the material layer (110). The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.
Abstract translation: 一种通过玻璃晶片形成通孔的方法包括：在玻璃晶片的外表面上沉积材料层（110），材料层的选择比高于玻璃晶片（200）的选择比; 在所述材料层的一侧上形成图案化部分，执行第一蚀刻，其中蚀刻所述通孔图案部分以形成初步通孔（130），从而消除用于形成所述通孔图案的任何剩余图案形成材料（120） 执行第二蚀刻，其中蚀刻预备通孔（130）以形成具有平滑表面且延伸穿过玻璃晶片的通孔（130'），并且去除材料层（110）。 根据本发明的方法能够形成穿过玻璃晶片的通孔，而不会形成底切或微小裂纹，从而增加MEMS元件的产量和可靠性。 ＆lt;图像＆GT;
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公开(公告)号：KR1020040042003A
公开(公告)日：2004-05-20
申请号：KR1020020070121
申请日：2002-11-12
Applicant: 삼성전자주식회사
IPC: H01L21/84
CPC classification number: B81C1/00087 , H01L21/486 , H01L23/13 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A method for forming a via hole of a glass wafer is provided to be capable of preventing an under-cut phenomenon and a micro crack and obtaining smooth surface of the via hole in an MEMS(Micro Electro Mechanical System) packaging process. CONSTITUTION: A predetermined material layer(110) having a higher selectivity ratio than that of glass is deposited on the entire surface of a glass substrate(200). A via hole(130) is formed by selectively patterning the resultant structure using a dry film resistor(120) as an etching mask. The first etching process is carried out on the via hole. Then, the dry film resistor is removed from the resultant structure. The second etching process is carried on the via hole. The predetermined material layer is removed from the resultant structure. Preferably, the predetermined material layer is made of polysilicon.
Abstract translation: 目的：提供一种用于形成玻璃晶片的通孔的方法，以能够防止在MEMS（微机电系统）包装工艺中的过孔现象和微裂纹，并获得通孔的光滑表面。 构成：在玻璃基板（200）的整个表面上沉积具有比玻璃的选择率高的预定材料层（110）。 通过使用干膜电阻器（120）作为蚀刻掩模对所得结构进行选择性图案化来形成通孔（130）。 第一蚀刻工艺在通孔上进行。 然后，从所得结构中除去干膜电阻器。 第二蚀刻工艺在通孔上进行。 从所得结构中除去预定的材料层。 优选地，预定材料层由多晶硅制成。
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