Abstract:
PURPOSE: A solar cell using graphene and a manufacturing method thereof are provided to easily manufacture a solar cell with a predetermined open circuit voltage by controlling the number of graphene unit layers. CONSTITUTION: A solar cell(100) comprises an anode electrode(110), a cathode electrode(140), a graphene layer(130), a semiconductor layer(120), and a photo reactive layer. The cathode electrode is arranged by being separated with the anode electrode. The graphene layer and the semiconductor layer are arranged between the anode electrode and the cathode electrode. The photo reactive layer generates electronics or a hole in response to entered light while being located in the interface of the semiconductor layer and the graphene layer. The graphene layer includes one or more graphene unit layers. The number of graphene unit layers, which constitutes the graphene layer, is controlled based on work function difference between the semiconductor layer and the graphene layer.
Abstract:
본 발명은 중성빔 발생장치로 생성된 중성빔을 이용하여, ALD 또는 ALD-LIKE-CVD 공정에서 평탄막 또는 트랜치 사이를 채우는 산화막을 심(Seam) 또는 보이드(Void) 없이 고르게 증착시켜 균일성 및 밀도를 높일 수 있으며, 이에 따라 ALD 및 ALD - LIKE CVD 장치에 따른 산화막을 실시간으로 처리함으로써, 고밀도의 평탄막 또는 65nm 이하의 얕은 트랜치(Shallow Trench) 형성에 따른 보이드(Void), 심(Seam) 문제 또는 저밀도 문제를 해결할 수 있고, 차세대 반도체 산화막 분리 공정을 향상시킬 수 있는 기판처리장치 및 기판처리방법을 제공하기 위한 것이다. 그 기술적 구성은 반도체 기판 내 패턴을 형성하기 위하여, 산화막을 증착시키는 ALCVD 장치와 상기 패턴 간에 증착되는 산화막의 심(Seam) 또는 보이드(Void)를 제거하기 위하여, 이온빔을 중성빔으로 변환하고, 상기 중성빔을 상기 패턴을 위해 증착되는 산화막에 조사하여 표면처리하는 중성빔 발생부를 포함하는 것을 그 특징으로 한다. 이온, 소스, 중성빔, 갭-필, ALD, CVD, 산화막, 반도체, 트랜치
Abstract:
A top emission organic light emitting display device using an organic protection layer and a method for manufacturing the same are provided to implement an efficient electronic injection by having a barium having a low work function of 2.7eV as a transparent protection layer. A top emission organic light emitting display device using layers protecting organic layers includes an organic protection layer(100). The organic light emitting display device of an active type and a passive type is composed of a transparent conducting electrode. When the transparent conducting electrode is manufactured, the organic protection layer prevents a damage of an organic material which is located on a lower layer from a generated energy. The organic protection layer is manufactured by forming at least one or two layers sequentially. A single layer or a plurality of layers are doped on at least one layer with metal or non-metal.
Abstract:
The present invention relates to an organic light emitting device including doped fullerene by metal oxide and/or carbonic metal, a manufacturing method thereof, a light emitting device including the same, and a display device including the same.
Abstract:
A neutral beam-assisted ALCVD(Atomic Layer Chemical Vapor Deposition) system and a substrate processing method using the same are provided to improve the density of a planarized film and to prevent non-uniform deposition in the process of filling in a gap of shallow trench with an oxide film. A neutral beam-assisted ALCVD system comprises an ALCVD apparatus and a neutral beam generating unit. The ALCVD apparatus deposits an oxide film in order to form a planarized film or pattern in a semiconductor substrate. The neutral beam generating unit changes ion beam to neutral beam and irradiates the neutral beam onto the oxide film in order to increase the density of the planarized film remove seam or void of the oxide film deposited between the patterns. The deposition of the oxide film and the irradiation of the neutral beam are performed at the same time.
Abstract:
The present invention relates to a method for patterning graphene, and more specifically, to a method for patterning graphene comprising the steps of forming an oxide layer on a substrate; forming metal patterns on the oxide layer; transferring graphene onto the oxide layer and the metal patterns; and forming graphene patterns by removing graphene from the metal patterns by applying heat to the graphene and vaporizing the graphene.
Abstract:
대기압 플라즈마를 이용한 기판의 이중 패터닝 방법이 개시(disclose)된다. 보다 구체적으로 본 개시는 기판을 제1 전극 및 제2 전극을 구비하는 대기압 플라즈마 장치에 제공하는 과정, 상기 제1 전극 및 상기 제2 전극 사이에서 대기압 플라즈마를 방전하여 상기 기판이 소수성 패턴을 가지도록 대기압 플라즈마 표면처리를 하는 과정, 상기 기판을 상기 제1 전극 및 상기 제2 전극 사이에서 소정거리만큼 이송하여 위치하게 하는 과정 및 상기 제1 전극 및 상기 제2 전극 사이에서 대기압 플라즈마를 방전하여 상기 기판이 친수성 패턴을 가지도록 대기압 플라즈마 친수성 표면처리를 하는 과정을 포함하여 상기 기판이 소수성 패턴과 친수성 패턴을 동시에 가지도록 하는 대기압 플라즈마를 이용한 기판의 이중 패터닝 방법을 제공한다.
Abstract:
PURPOSE: A dual patterning method of a substrate using atmospheric pressure plasma is provided to simultaneously form a hydrophobic pattern and a hydrophilic pattern on the substrate below several micro meters by selectively discharging atmospheric plasma. CONSTITUTION: A substrate is provided to an atmospheric pressure plasma device including a first electrode and a second electrode(S100). A hydrophobic pattern is formed on the substrate by discharging the atmospheric pressure plasma between the first electrode and the second electrode(S110). The substrate is transferred between the first electrode and the second electrode(S120). A hydrophilic pattern is formed on the substrate by discharging atmospheric pressure plasma between the first electrode and the second electrode(S130).